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WO2009122809A1 - Équipement de fabrication d'un panneau de conversion d'image radiographique et procédé de fabrication d'un panneau de conversion d'image radiographique - Google Patents

Équipement de fabrication d'un panneau de conversion d'image radiographique et procédé de fabrication d'un panneau de conversion d'image radiographique Download PDF

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Publication number
WO2009122809A1
WO2009122809A1 PCT/JP2009/053008 JP2009053008W WO2009122809A1 WO 2009122809 A1 WO2009122809 A1 WO 2009122809A1 JP 2009053008 W JP2009053008 W JP 2009053008W WO 2009122809 A1 WO2009122809 A1 WO 2009122809A1
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WIPO (PCT)
Prior art keywords
support
phosphor
image conversion
conversion panel
evaporation sources
Prior art date
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Ceased
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PCT/JP2009/053008
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English (en)
Japanese (ja)
Inventor
惠民 笠井
康史 永田
寛 伊佐
誠 飯島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Medical and Graphic Inc
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Konica Minolta Medical and Graphic Inc
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Publication date
Application filed by Konica Minolta Medical and Graphic Inc filed Critical Konica Minolta Medical and Graphic Inc
Publication of WO2009122809A1 publication Critical patent/WO2009122809A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • the present invention relates to a radiation image conversion panel, and more particularly, to a manufacturing apparatus for a radiation image conversion panel in which a phosphor layer is formed and a method for manufacturing the radiation image conversion panel.
  • radiographic images such as X-ray images have been widely used for diagnosis of medical conditions in the medical field.
  • radiographic images using intensifying screens and film systems have been developed as an imaging system that combines high reliability and excellent cost performance as a result of high sensitivity and high image quality in the long history. Used in the medical field.
  • the flat plate X-ray detector (FPD) is smaller than the CR and is characterized by superior image quality at high doses.
  • FPD flat plate X-ray detector
  • a scintillator plate made of an X-ray phosphor having the property of emitting light by radiation is used to convert the radiation into visible light.
  • the light emission efficiency is high. It will be necessary to use scintillator plates.
  • the light emission efficiency of the scintillator plate is determined by the thickness of the phosphor layer and the X-ray absorption coefficient of the phosphor. The thicker the phosphor layer, the more scattered the emitted light in the phosphor layer. Occurs and sharpness decreases. Therefore, when the sharpness necessary for the image quality is determined, the film thickness is determined.
  • CsI cesium iodide
  • phosphors can be easily formed into a columnar crystal structure by vapor deposition. And the thickness of the phosphor layer can be increased (see Patent Document 1).
  • cesium iodide contains an element called an activator such as thallium, sodium, or rubidium in order to improve luminous efficiency.
  • the present invention has been made in view of the above points, and a radiation image conversion panel manufacturing apparatus capable of obtaining a highly sharp radiation image without unevenness of sensitivity by making the crystallinity of a phosphor deposited on a support uniform. And it aims at providing the manufacturing method of a radiographic image conversion panel.
  • a vacuum vessel a support holder provided in the vacuum vessel, a support held by the support holder, and arranged on the circumference of a circle centering on a center line perpendicular to the support,
  • An apparatus for manufacturing a radiation image conversion panel comprising: a plurality of evaporation sources for evaporating a phosphor made of cesium iodide and an activator to deposit the phosphor on the support.
  • a step of holding the support by a support holder, and a plurality of vaporizing phosphors made of cesium iodide and an activator on the circumference of a circle centered on a center line perpendicular to the support A method for manufacturing a radiation image conversion panel, comprising the steps of: disposing an evaporation source; and depositing the phosphor evaporating from the plurality of evaporation sources on the support to form a phosphor layer.
  • a radiographic image conversion panel manufacturing apparatus and a radiographic image conversion panel manufacturing method in which the crystallinity of the phosphor deposited on the support is uniform, and there is no sensitivity unevenness and a highly sharp radiographic image can be obtained. I was able to.
  • the invention of claim 1 is a radiological image conversion panel manufacturing apparatus, comprising: a vacuum vessel; a support holder provided in the vacuum vessel; a support held by the support holder; and the support A plurality of evaporation sources disposed on the circumference of a circle centering on a center line perpendicular to the body, evaporating a phosphor composed of cesium iodide and an activator, and depositing the phosphor on the support; It is characterized by providing.
  • the portions where the vapor flows of the respective evaporation sources overlap are rectified, and the crystallinity of the support deposited on the surface of the support is made uniform. Can do.
  • the vapor flow is rectified at more locations, so that the crystallinity of the phosphor can be made uniform in a wider range.
  • the effect of uniforming the crystallinity due to the rectification of the vapor flow is achieved on the surface of the support. It can be obtained isotropically.
  • Invention of Claim 2 is a manufacturing apparatus of the radiation image conversion panel of Claim 1, Comprising: The said support body holder rotates the said support body when vapor-depositing the said fluorescent substance from the said evaporation source. A support rotating mechanism is provided.
  • the phosphor can be uniformly deposited on the surface of the support by performing the deposition of the phosphor while rotating the support by the support rotating mechanism.
  • a third aspect of the present invention is the radiation image conversion panel manufacturing apparatus according to the first or second aspect, wherein each of the plurality of evaporation sources and a center line perpendicular to the support are provided. And a plurality of shielding plates that shield the phosphor that evaporates from the plurality of evaporation sources and reaches the support at a predetermined incident angle.
  • the incident angle of the phosphor deposited on the support is reduced by shielding the phosphor that evaporates from the evaporation source and reaches the support at a predetermined incident angle by the shielding plate. It can be limited to a predetermined range. Thereby, it is possible to make the crystallinity uniform by preventing the variation in the incident angle of the phosphor.
  • the invention of claim 4 is a method for manufacturing a radiation image conversion panel, comprising: a step of holding a support by a support holder in a vacuum vessel; and a circle centered on a center line perpendicular to the support Arranging a plurality of evaporation sources for evaporating the phosphor on the circumference, and depositing the phosphors evaporated from the plurality of evaporation sources on the support to form a phosphor layer. It is characterized by that.
  • the overlapping portions of the vapor flows of the respective evaporation sources are rectified, and the crystallinity of the phosphor deposited on the surface of the support is made uniform. Can do.
  • the vapor flow is rectified at more locations, so that the crystallinity of the phosphor can be made uniform in a wider range.
  • the effect of uniforming the crystallinity due to the rectification of the vapor flow is achieved on the surface of the support. It can be obtained isotropically.
  • Invention of Claim 5 is a manufacturing method of the radiographic image conversion panel of Claim 4, Comprising: The said support body holder rotates the said support body when vapor-depositing the said fluorescent substance from the said evaporation source. A support rotating mechanism is provided.
  • the phosphor can be uniformly deposited on the surface of the support by performing the deposition of the phosphor while rotating the support by the support rotating mechanism.
  • the invention of claim 6 is a method of manufacturing a radiation image conversion panel according to claim 4 or claim 5, wherein each of the plurality of evaporation sources and a center line perpendicular to the support are provided.
  • the method further includes the step of standing up a plurality of shielding plates that shield the phosphor that evaporates from the plurality of evaporation sources and reaches the support at a predetermined incident angle.
  • the phosphor that evaporates from the evaporation source and reaches the support at a predetermined incident angle is shielded by the shielding plate, so that the incident angle of the phosphor deposited on the support is reduced. It can be limited to a predetermined range. Thereby, it is possible to make the crystallinity uniform by preventing the variation in the incident angle of the phosphor.
  • the radiation image conversion panel manufacturing apparatus 1 includes a vacuum container 2, and the vacuum container 2 includes a vacuum pump 3 that evacuates the inside of the vacuum container 2 and introduces the atmosphere. .
  • a support holder 5 that holds the support 4 is provided near the upper surface inside the vacuum vessel 2.
  • the support 4 can be arbitrarily selected from known materials as a support for a conventional radiation image conversion panel, and the support 4 of the present embodiment is made of quartz glass sheet, aluminum, iron, tin, chromium, or the like. A metal sheet or a carbon fiber reinforced sheet is preferred.
  • the support 4 may have a resin layer in order to make the surface smooth.
  • the resin layer preferably contains a compound such as polyimide, polyethylene phthalate, paraffin, graphite, and the film thickness is preferably about 5 ⁇ m to 50 ⁇ m. This resin layer may be provided on the front surface of the support 4 or on the back surface.
  • means for providing an adhesive layer on the surface of the support 4 there are means such as a bonding method and a coating method.
  • the laminating method is performed using heating and a pressure roller, the heating condition is about 80 to 150 ° C., the pressing condition is 4.90 ⁇ 10 to 2.94 ⁇ 10 2 N / cm, and the conveying speed is 0.1. ⁇ 2.0 m / s is preferred.
  • a phosphor layer is formed on the surface of the support 4 by a vapor deposition method.
  • a vapor deposition method a vapor deposition method, a sputtering method, a CVD method, an ion plating method, or the like can be used. In the present invention, the vapor deposition method is particularly preferable.
  • the support holder 5 is configured to hold the support 4 so that the surface of the support 4 on which the phosphor layer is formed faces the bottom surface of the vacuum vessel 2 and is parallel to the bottom surface of the vacuum vessel 2. It has become.
  • the support holder 5 is preferably provided with a heater (not shown) for heating the support 4.
  • a heater not shown for heating the support 4.
  • the adhesion of the support 4 to the support holder 5 is enhanced and the film quality of the phosphor layer is adjusted. Further, the adsorbate on the surface of the support 4 is removed and removed, and an impurity layer is prevented from being generated between the surface of the support 4 and a phosphor described later.
  • a heating medium or a mechanism (not shown) for circulating the heating medium may be provided as heating means. This means is suitable for the case where vapor deposition is performed while maintaining the temperature of the support 4 at a relatively low temperature of 50 to 150 ° C. during the vapor deposition of the phosphor.
  • a halogen lamp (not shown) may be provided as a heating means. This means is suitable for the case where vapor deposition is performed while keeping the temperature of the support 4 at a relatively high temperature such as 150 ° C. or higher during vapor deposition of the phosphor.
  • the support holder 5 is provided with a support rotating mechanism 6 that rotates the support 4 in the horizontal direction.
  • the support rotating mechanism 6 supports the support holder 5 and rotates the support 4 and a motor (not shown) that is disposed outside the vacuum vessel 2 and serves as a drive source for the support rotating shaft 7. Z).
  • evaporation sources 8 a and 8 b are arranged at positions facing each other on the circumference of a circle centering on the center line perpendicular to the support 4.
  • the distance between the support 4 and the evaporation sources 8a and 8b is preferably 100 mm to 1500 mm, and more preferably 200 mm to 1000 mm.
  • the distance between the center line perpendicular to the support 4 and the evaporation sources 8a and 8b is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm.
  • each evaporation source may be arranged at equal intervals or at different intervals. Also good.
  • the radius of a circle centered on the center line perpendicular to the support 4 can be arbitrarily determined.
  • the plurality of evaporation sources are arranged on the circumference of the circle, but it is more preferable that the evaporation sources are arranged at the center of the circle.
  • the evaporation sources 8a and 8b may be composed of an alumina crucible wound with a heater, or a boat or a heater made of a refractory metal. You may do it.
  • a method of heating the phosphor described later may be a method such as heating by an electron beam or heating by high frequency induction, but in the present invention, the handling is relatively simple and inexpensive, and In view of the fact that it can be applied to a large number of substances, a method in which current is directly applied and resistance is heated, and a method in which a crucible is indirectly resistance heated with a surrounding heater is preferable.
  • the evaporation sources 8a and 8b may be molecular beam sources by a molecular source epitaxial method.
  • a shutter 9 that blocks the space from the evaporation sources 8a and 8b to the support 4 is provided between the evaporation sources 8a and 8b and the support 4 so as to be openable and closable in the horizontal direction.
  • the evaporation sources 8a and 8b it is possible to prevent substances other than the target substance attached to the surface of the phosphor described later from evaporating at the initial stage of vapor deposition and adhering to the support 4.
  • the support 4 is attached to the support holder 5. Further, in the vicinity of the bottom surface of the vacuum vessel 2, the evaporation sources 8 a and 8 b are arranged on the circumference of a circle centering on the center line perpendicular to the support 4.
  • the distance between the support 4 and the evaporation sources 8a and 8b is preferably 100 mm to 1500 mm, and more preferably 200 mm to 1000 mm.
  • the distance between the center line perpendicular to the support 4 and the evaporation sources 8a and 8b is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm.
  • the inside of the vacuum vessel 2 is evacuated and adjusted to a desired degree of vacuum.
  • the support holder 5 is rotated with respect to the evaporation sources 8a and 8b by the support rotation mechanism 6, and when the vacuum vessel 2 reaches a vacuum degree capable of vapor deposition, a phosphor described later is heated from the heated evaporation sources 8a and 8b. By evaporating, a phosphor described later is grown on the surface of the support 4 to a desired thickness.
  • the phosphor layer can be formed by performing a process of growing a phosphor described later on the surface of the support 4 in a plurality of times.
  • the vapor deposition target (support 4, protective layer, or intermediate layer) may be cooled or heated as necessary during vapor deposition.
  • the phosphor layer may be heat-treated.
  • reactive vapor deposition may be performed in which vapor deposition is performed by introducing a gas such as O 2 or H 2 as necessary.
  • the film thickness of the phosphor layer to be formed is 50 ⁇ m to 2000 ⁇ m, preferably 50 ⁇ m to 1000 ⁇ m from the viewpoint of obtaining the effects of the present invention, although it varies depending on the purpose of use of the radiation image conversion panel and the type of phosphor described later. More preferably, it is 100 ⁇ m to 800 ⁇ m.
  • the temperature of the support 4 on which the phosphor layer is formed is preferably set to room temperature (rt) to 300 ° C., more preferably 50 to 250 ° C.
  • the phosphor layer is physically or chemically protected on the surface of the phosphor layer opposite to the support 4 as necessary.
  • a protective layer may be provided.
  • the protective layer may be formed by directly applying a coating solution for the protective layer to the surface of the phosphor layer, or a protective layer separately formed in advance may be adhered to the phosphor layer.
  • the thickness of these protective layers is preferably 0.1 ⁇ m to 2000 ⁇ m.
  • the protective layer may be formed by laminating inorganic substances such as SiC, SiO 2 , SiN, Al 2 O 3 by vapor deposition or sputtering.
  • the radiographic image conversion panel manufacturing apparatus 1 by providing a plurality of evaporation sources 8a and 8b, the overlapping portions of the vapor flows of the evaporation sources 8a and 8b are rectified, and the surface of the support 4 is rectified.
  • the crystallinity of the phosphor to be described later can be made uniform.
  • the vapor flow is rectified at more points, so that the crystallinity of the phosphor described later can be made uniform in a wider range.
  • the evaporation sources 8a and 8b are disposed on the circumference of a circle having a center line perpendicular to the support 4 as a center, the effect that the crystallinity becomes uniform due to the rectification of the vapor flow is provided. Can be obtained isotropically on the surface.
  • the phosphor described later can be deposited uniformly on the surface of the support 4 by depositing the phosphor described later while rotating the support 4 by the support rotating mechanism 6.
  • the manufacturing apparatus 1 of the present embodiment includes a vacuum vessel 2, the vacuum vessel 2 is provided with a vacuum pump 3, and a support rotating mechanism 6 is provided near the upper surface inside the vacuum vessel 2.
  • the provided support holder 5 is provided and is the same as that of the first embodiment in that the support 4 is held by the support holder 5.
  • evaporation sources 8 a and 8 b are arranged on the circumference of a circle centering on a center line perpendicular to the support 4, and the evaporation sources 8 a and 8 b and the support are arranged.
  • 4 is the same as that of the first embodiment in that a shutter 9 is provided.
  • shielding plates 10 a and 10 b are erected between each of the evaporation sources 8 a and 8 b and a center line perpendicular to the support 4.
  • the shielding plates 10a and 10b shield phosphors described later that evaporate from the evaporation sources 8a and 8b and reach the support 4 at a predetermined incident angle.
  • the incident angle refers to an acute angle ⁇ formed by a surface of the support 4 on which the phosphor layer is formed and an incident direction of the phosphor described later.
  • the shielding plate 10a is formed on a line segment connecting the evaporation source 8a and the center point of the surface of the support 4 facing the evaporation sources 8a and 8b. It arrange
  • the shielding plate 10b has a height at which the upper end portion of the shielding plate 10b is in contact with a line segment connecting the evaporation source 8b and the center point of the surface of the support 4 facing the evaporation sources 8a and 8b. It arrange
  • the shielding plates 10a and 10b By arranging the shielding plates 10a and 10b in this way, a phosphor described later which is evaporated from the evaporation source 8a and is to be deposited near the upper portion of the evaporation source 8b of the support 4 is blocked by the shielding plate 10a. Therefore, the range in which a phosphor described later evaporated from the evaporation source 8a is deposited is limited to the vicinity of the upper portion of the evaporation source 8a in the support 4. Thereby, the incident angle of a phosphor to be described later deposited on the support 4 is limited within a certain range.
  • the range in which the phosphor to be described later evaporated from the evaporation source 8b is limited to the vicinity of the upper portion of the evaporation source 8b in the support 4, so that the incident angle of the phosphor to be described later deposited on the support 4 similarly. Is limited to within a certain range.
  • the shielding plates 10a and 10b by setting up the shielding plates 10a and 10b, the range of incident angles of phosphors to be described later deposited on the support 4 from the evaporation sources 8a and 8b is limited.
  • the support body 4 is attached to the support body holder 5 and the evaporation sources 8a and 8b are arranged on the circumference of a circle centering on the center line perpendicular to the support body 4, and then each of the evaporation sources 8a and 8b and the support body.
  • Shield plates 10 a and 10 b are erected between the center line and the center line perpendicular to 4.
  • the shielding plates 10a and 10b are placed at points on the line segment connecting the evaporation sources 8a and 8b and the center point of the surface of the support 4 facing the evaporation sources 8a and 8b.
  • 10b are arranged so as to be at a height and a position where the upper end portions are in contact.
  • the support holder 5 is rotated with respect to the evaporation sources 8a and 8b by the support rotation mechanism 6 so that the vacuum vessel 2 has a degree of vacuum that allows vapor deposition.
  • the phosphor is evaporated from the heated evaporation sources 8a and 8b, and a phosphor described later is grown on the surface of the support 4 to a desired thickness.
  • the shielding plates 10a and 10b By disposing the shielding plates 10a and 10b at such positions, phosphors described later which are evaporated from the evaporation source 8a and are to be deposited near the upper portion of the evaporation source 8b in the support 4 are blocked by the shielding plate 10a. . Therefore, the range in which the phosphor evaporated from the evaporation source 8a is deposited is limited to the vicinity of the upper portion of the evaporation source 8a in the support 4. As a result, the incident angle of the phosphor deposited on the support 4 is limited within a certain range.
  • the range of the phosphor to be described later evaporated from the evaporation source 8b is limited to the vicinity of the upper portion of the evaporation source 8b in the support 4, the incident angle of the phosphor to be described later deposited on the support 4 is also constant. It is limited within the range.
  • the same action as in the first embodiment can be obtained, and it can be evaporated from the evaporation sources 8a and 8b and reach the support 4 at a predetermined incident angle.
  • the incident angle of the later-described phosphors deposited on the support 4 can be limited to a predetermined range. As a result, it is possible to make the crystallinity uniform by preventing variations in the incident angle of the phosphor described later.
  • the phosphor layer is grown on the surface of the support 4 so that the crystallinity of the phosphor described later is uniform.
  • the sensitivity unevenness of the phosphor layer can be reduced, and the sharpness of the radiographic image obtained from the radiographic image conversion panel can be improved.
  • the crystallinity of the phosphor is made more uniform, and the radiation image conversion panel The sharpness of the radiographic image obtained from can be improved.
  • the support body holder 5 was equipped with the support body rotation mechanism 6, this invention is not necessarily restricted to this, It vapor-deposits in the state which the support body holder 5 hold
  • the present invention can also be applied to the case where a phosphor to be described later is evaporated from the evaporation sources 8a and 8b by moving the support 4 in the horizontal direction with respect to the evaporation sources 8a and 8b.
  • the phosphor material of the present invention has a relatively high change rate from X-rays to visible light, and the phosphor can be easily formed into a columnar crystal structure by vapor deposition. Therefore, scattering of emitted light in the crystal is suppressed by the light guide effect.
  • CsI is preferable because the thickness of the phosphor layer can be increased.
  • CsI alone has low luminous efficiency
  • various activators are added.
  • a mixture of CsI and sodium iodide (NaI) at an arbitrary molar ratio can be mentioned.
  • CsI is deposited by vapor deposition of indium (In), thallium (Tl), lithium (Li), potassium (K), rubidium (Rb), sodium ( CsI containing an activating substance such as Na) is preferred.
  • thallium activated cesium iodide (CsI: Tl) is preferable because it has a broad emission wavelength from 400 nm to 750 nm.
  • thallium compound of the activator containing one or more kinds of thallium compounds according to the present invention various thallium compounds (compounds having + I and + III oxidation numbers) can be used.
  • thallium compounds are thallium iodide (TlI), thallium bromide (TlBr), thallium chloride (TlCl) and the like.
  • the melting point of the thallium compound according to the present invention is preferably in the range of 400 to 700 ° C. If the temperature exceeds 700 ° C., the activator in the columnar crystals exists non-uniformly, and the light emission efficiency decreases.
  • the melting point is a melting point at normal temperature and pressure.
  • the content of the activator is desirably an optimum amount according to the target performance and the like, but is 0.001 to 50 mol% with respect to the content of cesium iodide. .1 to 10.0 mol% is preferable.
  • the additive when the additive is less than 0.001 mol% with respect to cesium iodide, the intended emission luminance cannot be obtained without much difference from the emission luminance obtained by using cesium iodide alone. Moreover, when it exceeds 50 mol%, the property and function of cesium iodide cannot be maintained.
  • a protective layer for physically or chemically protecting the phosphor layer may be provided on the surface of the phosphor layer opposite to the support.
  • the protective layer may be formed by directly applying a coating solution for the protective layer to the surface of the phosphor layer, or a protective layer separately formed in advance may be adhered to the phosphor layer.
  • the protective film can be formed using various materials.
  • a polyparaxylylene film is formed by a CVD method. That is, a polyparaxylylene film can be formed on the entire surface of the substrate on which the phosphor has been formed to form a protective film.
  • a polymer protective film can be provided as a protective film of another embodiment.
  • the thickness of the polymer protective film is preferably 12 ⁇ m or more and 100 ⁇ m or less, more preferably 20 ⁇ m or more and 60 ⁇ m, taking into consideration the formation of voids, the protective properties of the phosphor layer, sharpness, moisture resistance, workability and the like. The following is preferred.
  • the haze ratio is preferably 3% or more and 40% or less, more preferably 3% or more and 10% or less in consideration of sharpness, radiation image unevenness, manufacturing stability, workability, and the like.
  • a haze rate shows the value measured by Nippon Denshoku Industries Co., Ltd. NDH 5000W.
  • the required haze ratio is appropriately selected from commercially available polymer films and can be easily obtained.
  • the light transmittance of the protective film is preferably 70% or more at 550 nm in consideration of photoelectric conversion efficiency, phosphor emission wavelength, etc., but a film having a light transmittance of 99% or more is difficult to obtain industrially. Substantially 70 to 99% is preferable.
  • the moisture permeability of the protective film is preferably 50 g / m 2 ⁇ day (40 ° C., 90% RH) (measured in accordance with JIS Z0208) or less, more preferably 10 g / m 2 taking into account the protective properties and deliquescence of the phosphor layer.
  • m 2 ⁇ day (40 ° C, 90% RH) (measured according to JIS Z0208) or less is preferable, but a film with a water vapor transmission rate of 0.01 g / m 2 ⁇ day (40 ° C, 90% RH) or less is industrial.
  • it is substantially 0.01 g / m 2 ⁇ day (40 ° C, 90% RH) or more, 50 g / m 2 ⁇ day (40 ° C., 90% RH) (measured according to JIS Z0208) ) Or less, more preferably 0.1 g / m 2 ⁇ day (40 ° C./90% RH) or more and 10 g / m 2 ⁇ day (40 ° C./90% RH) (measured according to JIS Z0208) or less. .
  • a conductive metal reflective layer shown below can be provided on a substrate, a metal protective layer can be further provided thereon, and a phosphor layer can be provided thereon by vapor deposition.
  • the conductive metal reflective layer can function as a reflective layer because it emits light converted by the phosphor layer to the outside, and the conductive metal reflective layer has high reflectivity in terms of the efficiency of use of emitted light. It is preferable to form with a metal.
  • the metal film layer having high reflectivity include a material containing a substance in the group consisting of Al, Ag, Cr, Cu, Ni, Mg, Pt, and Au.
  • the method for forming the conductive metal reflective layer according to the present invention may be any known method, for example, a sputtering process using the above raw materials. Two or more such metal thin films may be formed.
  • the lower layer is a layer containing Cr from the viewpoint of improving the adhesion to the substrate.
  • a layer made of a metal oxide such as SiO 2 or TiO 2 may be provided in this order on the metal thin film to further improve the reflectance.
  • the thickness of the reflective layer is preferably 0.01 to 0.3 ⁇ m from the viewpoint of the emission light extraction efficiency.
  • the conductive metal is preferably one having an electric conductivity of 6.0 S / m (Siemens per meter) or more, more preferably 30 S / m or more. Specifically, Al (40 S / m), Ag (67 S / m), and Au (46 S / m) are preferable in terms of reflectivity and electrical conductivity.
  • the metal protective layer is preferably formed by applying and drying a resin dissolved in a solvent.
  • a polymer having a glass transition point of 30 to 100 ° C. is preferable in terms of attaching a film between the deposited crystal and the substrate.
  • a polyurethane resin a vinyl chloride copolymer, a vinyl chloride-vinyl acetate copolymer, Vinyl chloride-vinylidene chloride copolymer, vinyl chloride-acrylonitrile copolymer, butadiene-acrylonitrile copolymer, polyamide resin, polyvinyl butyral, polyester resin, cellulose derivatives (nitrocellulose, etc.), styrene-butadiene copolymer, various types Synthetic rubber resins, phenol resins, epoxy resins, urea resins, melamine resins, phenoxy resins, silicon resins, acrylic resins, urea formamide resins and the like can be mentioned, and polyester resins are particularly preferable.
  • the thickness of the metal protective layer is preferably 0.1 ⁇ m or more in terms of adhesion, and preferably 3.0 ⁇ m or less in terms of ensuring the smoothness of the surface of the metal protective layer. More preferably, the thickness of the metal protective layer is in the range of 0.2 to 2.5 ⁇ m.
  • Solvents used for metal protective layer preparation include lower alcohols such as methanol, ethanol, n-propanol and n-butanol, chlorine atom-containing hydrocarbons such as methylene chloride and ethylene chloride, ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone, Aromatic compounds such as toluene, benzene, cyclohexane, cyclohexanone, xylene, esters of lower fatty acids and lower alcohols such as methyl acetate, ethyl acetate, butyl acetate, ethers such as dioxane, ethylene glycol monoethyl ester, ethylene glycol monomethyl ester, And mixtures thereof.
  • lower alcohols such as methanol, ethanol, n-propanol and n-butanol
  • chlorine atom-containing hydrocarbons such as methylene chloride and ethylene chloride
  • ketones such
  • Example 1 (Production of radiation image conversion panel) A phosphor (CsI: 0.003 Tl) was deposited on one side of a support made of a polyimide resin sheet to form a phosphor layer.
  • a support was installed on a support holder equipped with a support rotation mechanism.
  • the phosphor raw material is filled in the evaporation source crucible as an evaporation material, and the two evaporation source crucibles are in the vicinity of the bottom of the inside of the vacuum vessel and are circles centered on the center line perpendicular to the support Arranged on the circumference.
  • the distance between the support and the evaporation source was adjusted to 500 mm, and the distance between the center line perpendicular to the support and the evaporation source was adjusted to 300 mm.
  • the inside of the vacuum vessel was once evacuated, Ar gas was introduced and the degree of vacuum was adjusted to 0.1 Pa, and then the temperature of the support was maintained at 50 ° C. while rotating the support at a speed of 10 rpm.
  • the inside of the crucible was raised to a predetermined temperature by resistance heating to start the phosphor deposition, the substrate temperature was increased to 200 ° C., and the deposition was terminated when the phosphor layer thickness reached 450 ⁇ m.
  • the phosphor layer was put in a protective layer bag in dry air to obtain a radiation image conversion panel having a structure in which the phosphor layer was sealed.
  • Example 2 A radiation image conversion panel was obtained with four evaporation sources in Example 1.
  • Example 3 A radiation image conversion panel was obtained with eight evaporation sources in Example 1.
  • Example 4 A radiation image conversion panel was obtained with 16 evaporation sources in Example 1.
  • Example 5 A radiation image conversion panel was obtained with 32 evaporation sources in Example 1.
  • Comparative Example 1 A radiation image conversion panel was obtained by setting the number of evaporation sources in Example 1 to one.
  • MTF modulation transfer function
  • the sharpness when the number of evaporation sources is 2 in Example 1 is 104, and 100 when the number of evaporation sources is 1 in Comparative Example 2.
  • the sharpness is improved.
  • the sharpness is improved to 113, 122, 126, and 135 as the number of evaporation sources increases to 4, 8, 16, and 32. Recognize.
  • Example 6 (Production of radiation image conversion panel) A phosphor (CsI: 0.003 Tl) was deposited on one side of a support made of a polyimide resin sheet to form a phosphor layer.
  • a support was installed on a support holder equipped with a support rotation mechanism.
  • the phosphor raw material is filled in the evaporation source crucible as an evaporation material, and the two evaporation source crucibles are in the vicinity of the bottom of the inside of the vacuum vessel and are circles centered on the center line perpendicular to the support Arranged on the circumference.
  • the distance between the support and the evaporation source was adjusted to 450 mm, and the distance between the center line perpendicular to the support and the evaporation source was adjusted to 300 mm.
  • the two shielding plates are arranged so that the height and position where the upper end portion of the shielding plate is in contact with the line segment connecting the evaporation source and the center point of the surface of the support that faces the evaporation source.
  • the range of the incident angle when the phosphor is deposited on the support is limited.
  • the inside of the vacuum vessel was once evacuated, Ar gas was introduced and the degree of vacuum was adjusted to 0.1 Pa, and then the temperature of the support was maintained at 50 ° C. while rotating the support at a speed of 10 rpm.
  • the inside of the crucible was raised to a predetermined temperature by resistance heating to start the phosphor deposition, the substrate temperature was increased to 200 ° C., and the deposition was terminated when the phosphor layer thickness reached 450 ⁇ m.
  • the phosphor layer was put in a protective layer bag in dry air to obtain a radiation image conversion panel having a structure in which the phosphor layer was sealed.
  • Example 7 A radiation image conversion panel was obtained with four evaporation sources in Example 6.
  • Example 8 A radiation image conversion panel was obtained with eight evaporation sources in Example 6.
  • Example 9 A radiation image conversion panel was obtained with 16 evaporation sources in Example 6.
  • Example 10 A radiation image conversion panel was obtained with 32 evaporation sources in Example 6.
  • Example 11 The number of evaporation sources in Example 6 was 32, and one evaporation source was arranged not only at the circumference but also at the center of the circle to obtain a radiation image conversion panel.
  • Comparative Example 2 A radiation image conversion panel was obtained in a state where the number of evaporation sources in Example 6 was one and no shielding plate was disposed.
  • Comparative Example 3 A radiation image conversion panel was obtained by setting the number of evaporation sources in Example 6 to one.
  • MTF modulation transfer function
  • MTF is a value when the spatial frequency is 1 cycle / mm.
  • the sharpness when the number of evaporation sources is 2 in Example 6 is 111, and 100 when the number of evaporation sources is 1 in Comparative Example 3.
  • the sharpness is improved.
  • the sharpness improved to 114, 126, 131, and 139 as the number of evaporation sources increased to 4, 8, 16, and 32.
  • the thickness distribution of the phosphor layer is good while maintaining the sharpness at 139 by arranging the evaporation source in the center of the circle in addition to the 32 evaporation sources in the circumferential portion, Good characteristics without unevenness of sensitivity were obtained.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)

Abstract

L'invention porte sur un équipement de fabrication d'un panneau de conversion d'image radiographique qui uniformise les performances cristallines d'un matériau fluorescent déposé sur un support, pour garantir que les images radiographiques ne présenteront aucune variation de la sensibilité, et présenteront une grande netteté, et sur un procédé de fabrication d'un tel panneau de conversion d'image radiographique. L'équipement de fabrication d'un panneau de conversion d'image radiographique et le procédé de fabrication d'un tel panneau de conversion d'image radiographique sont caractérisés en ce qu'ils possèdent un récipient sous pression, un élément de soutien de support, disposé à l'intérieur du récipient sous pression, un support soutenu par l'élément de soutien de support, et une pluralité de sources d'évaporation qui sont disposées sur une circonférence d'un cercle centré autour d'un axe orthogonal au support pour déposer le matériau fluorescent consistant en iodure de césium et en un agent activateur sur le support par l'évaporation du matériau fluorescent.
PCT/JP2009/053008 2008-04-03 2009-02-20 Équipement de fabrication d'un panneau de conversion d'image radiographique et procédé de fabrication d'un panneau de conversion d'image radiographique Ceased WO2009122809A1 (fr)

Applications Claiming Priority (2)

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JP2008-096964 2008-04-03
JP2008096964 2008-04-03

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5720566B2 (ja) * 2009-06-26 2015-05-20 コニカミノルタ株式会社 シンチレータパネル、シンチレータパネルの製造方法、放射線画像検出器および放射線画像検出器の製造方法
CN112442661A (zh) * 2019-08-28 2021-03-05 佳能株式会社 蒸镀装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006225733A (ja) * 2005-02-18 2006-08-31 Ulvac Japan Ltd 成膜装置及び成膜方法
JP2008051793A (ja) * 2006-03-02 2008-03-06 Canon Inc 放射線検出装置及びシンチレータパネル

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006225733A (ja) * 2005-02-18 2006-08-31 Ulvac Japan Ltd 成膜装置及び成膜方法
JP2008051793A (ja) * 2006-03-02 2008-03-06 Canon Inc 放射線検出装置及びシンチレータパネル

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5720566B2 (ja) * 2009-06-26 2015-05-20 コニカミノルタ株式会社 シンチレータパネル、シンチレータパネルの製造方法、放射線画像検出器および放射線画像検出器の製造方法
CN112442661A (zh) * 2019-08-28 2021-03-05 佳能株式会社 蒸镀装置
CN112442661B (zh) * 2019-08-28 2023-07-25 佳能株式会社 蒸镀装置

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