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WO2009119161A3 - Solar cell and method for manufacturing metal electrode layer to be used in the solar cell - Google Patents

Solar cell and method for manufacturing metal electrode layer to be used in the solar cell Download PDF

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Publication number
WO2009119161A3
WO2009119161A3 PCT/JP2009/051917 JP2009051917W WO2009119161A3 WO 2009119161 A3 WO2009119161 A3 WO 2009119161A3 JP 2009051917 W JP2009051917 W JP 2009051917W WO 2009119161 A3 WO2009119161 A3 WO 2009119161A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode layer
solar cell
metal electrode
metal
manufacturing metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/051917
Other languages
French (fr)
Other versions
WO2009119161A2 (en
Inventor
Eishi Tsutsumi
Tsutomu Nakanishi
Ryota Kitagawa
Akira Fujimoto
Koji Asakawa
Satoshi Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to CN2009801093848A priority Critical patent/CN101978507B/en
Priority to US12/441,036 priority patent/US20100175749A1/en
Publication of WO2009119161A2 publication Critical patent/WO2009119161A2/en
Publication of WO2009119161A3 publication Critical patent/WO2009119161A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A solar cell includes: a first electrode layer formed on a substrate; a generating layer formed on the first electrode layer; and a second electrode layer formed on the generating layer, at least one of the first electrode layer and the second electrode layer being a metal electrode layer having optical transparency, the metal electrode layer having a plurality of openings that penetrate through the metal electrode layer. The metal electrode layer includes metal parts, any two metal parts of the metal electrode layer continues to each other without a cut portion, the metal electrode layer has a film thickness in the range of 10 nm to 200 nm, and sizes of the openings are equal to or smaller than 1/2 of the wavelength of light to be used for generating electricity.
PCT/JP2009/051917 2008-03-24 2009-01-29 Solar cell and method for manufacturing metal electrode layer to be used in the solar cell Ceased WO2009119161A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2009801093848A CN101978507B (en) 2008-03-24 2009-01-29 Solar cell and method for manufacturing metal electrode layer to be used in the solar cell
US12/441,036 US20100175749A1 (en) 2008-03-24 2009-01-29 Solar cell and method for manufacturing metal electrode layer to be used in the solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008075224A JP5475246B2 (en) 2008-03-24 2008-03-24 Solar cell
JP2008-075224 2008-03-24

Publications (2)

Publication Number Publication Date
WO2009119161A2 WO2009119161A2 (en) 2009-10-01
WO2009119161A3 true WO2009119161A3 (en) 2010-02-25

Family

ID=41114420

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/051917 Ceased WO2009119161A2 (en) 2008-03-24 2009-01-29 Solar cell and method for manufacturing metal electrode layer to be used in the solar cell

Country Status (3)

Country Link
JP (1) JP5475246B2 (en)
CN (1) CN101978507B (en)
WO (1) WO2009119161A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8039292B2 (en) * 2009-11-18 2011-10-18 International Business Machines Corporation Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes
JP5649315B2 (en) * 2010-03-05 2015-01-07 Ｊｘ日鉱日石エネルギー株式会社 Transparent conductive substrate for solar cell, method for producing the same, and solar cell using the same
WO2011125101A1 (en) * 2010-04-02 2011-10-13 株式会社 東芝 Photoelectric converter element and method of manufacturing same
FI20106004A0 (en) * 2010-09-29 2010-09-29 Beneq Oy Solar cell substrate and its manufacturing process
JP5398678B2 (en) * 2010-09-29 2014-01-29 株式会社東芝 Photoelectric conversion element
CN103178163B (en) * 2011-08-02 2015-08-05 南通大学 A kind of manufacture method of silicon-based buried contact thin-film solar cells
US9520530B2 (en) * 2014-10-03 2016-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Solar cell having doped buffer layer and method of fabricating the solar cell
KR101938830B1 (en) * 2016-10-05 2019-01-16 울산과학기술원 Solar cell with controlled transmittance and manufacturing method thereof
KR101778723B1 (en) 2016-11-17 2017-09-25 한국에너지기술연구원 Manufacturing method for cigs base photovoltaic cell and cigs base photovoltaic cell
CN109346554B (en) * 2018-08-23 2020-06-12 晶澳（扬州）太阳能科技有限公司 A method of making a photovoltaic module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795500A (en) * 1985-07-02 1989-01-03 Sanyo Electric Co., Ltd. Photovoltaic device
JPH02271681A (en) * 1989-04-13 1990-11-06 Fuji Electric Co Ltd solar cell device
US20060112987A1 (en) * 2003-01-10 2006-06-01 Toshinobu Nakata Transparent thin-film solar cell module and its manufacturing method
EP1850397A1 (en) * 2005-02-14 2007-10-31 Sanyo Electric Co., Ltd. Photovoltaic device, photovoltaic module comprising photovoltaic device, and method for manufacturing photovoltaic device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0969517B1 (en) * 1998-07-04 2005-10-12 International Business Machines Corporation Electrode for use in electro-optical devices
US6040936A (en) * 1998-10-08 2000-03-21 Nec Research Institute, Inc. Optical transmission control apparatus utilizing metal films perforated with subwavelength-diameter holes
US6441298B1 (en) * 2000-08-15 2002-08-27 Nec Research Institute, Inc Surface-plasmon enhanced photovoltaic device
CN1180486C (en) * 2001-10-31 2004-12-15 四川大学 Transparent Conductive Film Front Electrode Crystalline Silicon Solar Cell
JP5193454B2 (en) * 2005-10-31 2013-05-08 株式会社東芝 Short wavelength polarizing element and polarizing element manufacturing method
JP4421582B2 (en) * 2006-08-15 2010-02-24 株式会社東芝 Pattern formation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795500A (en) * 1985-07-02 1989-01-03 Sanyo Electric Co., Ltd. Photovoltaic device
JPH02271681A (en) * 1989-04-13 1990-11-06 Fuji Electric Co Ltd solar cell device
US20060112987A1 (en) * 2003-01-10 2006-06-01 Toshinobu Nakata Transparent thin-film solar cell module and its manufacturing method
EP1850397A1 (en) * 2005-02-14 2007-10-31 Sanyo Electric Co., Ltd. Photovoltaic device, photovoltaic module comprising photovoltaic device, and method for manufacturing photovoltaic device

Also Published As

Publication number Publication date
CN101978507B (en) 2012-11-07
WO2009119161A2 (en) 2009-10-01
JP5475246B2 (en) 2014-04-16
CN101978507A (en) 2011-02-16
JP2009231539A (en) 2009-10-08

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