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WO2009111937A1 - Ntc薄膜热敏电阻及其制造方法 - Google Patents

Ntc薄膜热敏电阻及其制造方法 Download PDF

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Publication number
WO2009111937A1
WO2009111937A1 PCT/CN2008/073343 CN2008073343W WO2009111937A1 WO 2009111937 A1 WO2009111937 A1 WO 2009111937A1 CN 2008073343 W CN2008073343 W CN 2008073343W WO 2009111937 A1 WO2009111937 A1 WO 2009111937A1
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Prior art keywords
ntc
glass glaze
substrate
film thermistor
layer
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English (en)
French (fr)
Inventor
杨传仁
陈宏伟
张继华
杨莉军
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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Priority claimed from CNA2008100449617A external-priority patent/CN101241786A/zh
Priority claimed from CN2008103042566A external-priority patent/CN101337830B/zh
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to US12/919,169 priority Critical patent/US20110068890A1/en
Publication of WO2009111937A1 publication Critical patent/WO2009111937A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable

Definitions

  • This invention relates to thin film components, and more particularly to thin film NTC thermistors and methods of making same.
  • NTC Coefficient abbreviated as NTC
  • Thermistor also known as NTC thermistor, usually composed of NTC heat-sensitive materials, such as transition metal oxide semiconductor ceramic materials, whose resistance decreases exponentially with increasing temperature. , is the ideal temperature sensor material.
  • NTC thermistor is block-shaped, and its main disadvantage is that the bulk material has a large volume and a large heat capacity, which greatly reduces the temperature response speed of the NTC thermistor; Cutting, grinding, polishing and other mechanical processing, so the precision is not high; the existing NTC thermistor can not achieve large-scale automated production, so the product consistency, reliability, and high cost.
  • NTC thermistors using transition metal Mn, Ni, Co, Fe, Cu oxide films. Since the resistivity of these materials is usually high and the structure of the resistor is unreasonable, the resistance is too large after the formation of the thin film thermistor, and the application range is greatly limited. During the production process, high-frequency sputtering is subjected to plasma treatment after film formation, and the preparation process is too long.
  • Japanese Patent No. 63-266801 is applied to the upper and lower sides of the sensitive layer film.
  • the NTC thermistor of this structure often appears due to the extremely small film resistance of the sensitive layer, and the electrode is directly separated by a very thin sensitive layer. Short circuit.
  • the NTC film thermistor formed by thin film.
  • the NTC film thermistor has a lower resistivity than a transition metal oxide such as Mn, Ni, Co, Fe, Cu, etc., and its negative temperature coefficient is very small, resulting in low sensitivity of the thermistor; and due to a single material type, Therefore, the resistivity and temperature coefficient cannot be serialized.
  • 6,880,134B2 planarizes the surface of the substrate using silicon nitride. This method is impossible to fill the ceramic base The micron-sized pores of the plate are such that they reach a nano-scaled surface.
  • the substrates used in existing thin film technology are generally expensive single crystal substrates (such as single crystal Si, LaA10 3 ,
  • MgO, sapphire, GaN, etc. or mechanically polished ceramic substrates are costly. There are micron-scale defects on the surface of the polished ceramic substrate, so the use of the NTC film substrate will make the NTC film and the internal electrode discontinuous, resulting in defects, disconnection, short circuit, and the like.
  • the technical problem to be solved by the present invention is to provide a method for flattening the surface of a substrate by using a glass glaze, so that the surface roughness of the substrate is from the micron level to the nanometer level, which satisfies the requirements for the preparation of the thin film device.
  • the invention also utilizes the interdigitated electrode structure to solve the problem that the resistance of the thermistor made of the transition metal as a sensitive material is too high.
  • the NTC thin film thermistor comprises a substrate, a sensitive layer, an inner electrode and a terminal electrode, wherein a glaze is arranged between the substrate and the sensitive layer, and the glass glaze is used for filling the Substrate surface
  • the sensitive layer is composed of a transition metal oxide film.
  • NTC thin film thermistor manufacturing method including the following steps:
  • the glass glaze is prepared by a sol-gel method, and the specific steps are as follows:
  • a reactive layer is prepared by reactive sputtering, and the sensitive layer material is a transition metal oxide, and the specific steps are as follows: Next:
  • the internal electrode is prepared by evaporation or sputtering, and the internal electrode material may be Au, Cu, Al or other conductive materials; the specific steps are as follows:
  • the Ag/Ni/Sn three-layer electrode was prepared by electroplating.
  • the beneficial effects of the present invention are that the method of planarizing the surface of an inexpensive ceramic substrate by using a surface-coated glass glaze method reduces the manufacturing cost of the NTC film thermistor and improves the thermal sensitivity of the NTC film.
  • the structure of the resistor improves reliability and yield.
  • the use of transition metal oxides as a sensitive material enhances the performance of NTC thin film thermistors and expands the range of application.
  • the resistance of the NTC film thermistor of the present invention can be controlled by adjusting the material formulation or the width, gap and length of the internal electrode fingers. Accordingly, the present invention provides a method of fabricating an NTC thin film thermistor that reduces cost, improves reliability, and yields.
  • Figure 1 is a schematic structural view of a NTC thin film thermistor
  • Figure 2 is a flow chart of the preparation of NTC thin film thermistor
  • Figure 3 is an SEM image of a ceramic substrate
  • Figure 4 is an SEM image of a glass glaze prepared on the surface of a ceramic substrate
  • Figure 5 is a three-dimensional AFM image of a glass glaze prepared on the surface of a ceramic substrate
  • Figure 6 is a graph showing the resistance temperature characteristics of a typical NTC thin film thermistor.
  • the invention adopts a process for preparing a glass glaze on the surface of a substrate, planarizes the surface of the substrate, and combines an advanced reactive sputtering process to prepare a transition metal oxide film as a sensitive layer, and further utilizes
  • the etched interdigital electrode acts as an internal electrode, which improves the accuracy of the NTC thermistor and expands the range of application.
  • the NTC film thermistor of this example is composed of a substrate 1, a glass glaze 2, a sensitive layer 3, an internal electrode 4, a protective layer 5, and a terminal electrode 6.
  • the glass glaze 2 located between the substrate 1 and the sensitive layer 3 is filled in the pits on the surface of the substrate 1 to flatten the surface of the substrate 2.
  • the sensitive layer is composed of a transition metal oxide film such as an oxide film of Mn, Ni, Co, Fe, Cu or the like.
  • the inner electrode 4 is composed of a layer of a conductive metal film, and the inner electrode 4 is processed into a comb electrode structure (or referred to as an interdigitated electrode structure) by an etching process. This electrode structure increases the current carrying area and can greatly reduce the resistance value.
  • the substrate 1 of this example uses an A1 2 0 3 ceramic substrate, and since a glass glaze is prepared between the sensitive layer 3 and the substrate 1, the pits on the surface of the A1 2 0 3 ceramic substrate can be filled, so The substrate 1 of this example does not require mechanical polishing.
  • A1 using tetraethyl orthosilicate as a complexing agent to prepare a CaAISi-based or MgAISi-based glass glaze sol; [47] A2, conventional cleaning treatment of the ceramic substrate;
  • the glass glaze preparation process it is easy to select a suitable formulation to make the glass glaze softening temperature reach 1100 ⁇ 1500 °C, and the glass glaze has a higher softening temperature to avoid trouble in the subsequent process.
  • the glass glaze does not contain alkali metal ions, which is beneficial to improve the electrical performance index of the glass glaze.
  • Preparing an internal electrode on the surface of the sensitive layer ⁇
  • Preparing an internal electrode by evaporation or sputtering, and the internal electrode material may be Au, Al, Pd, Cu or other conductive materials; the specific steps are as follows:
  • the conductive layer film is dry or wet etched to form an interdigital electrode.
  • a layer of Si0 2 , Si 3 N 4 is prepared on the inner electrode by PECVD or sputtering process, and the end conductive layer is exposed by etching to prepare a terminal electrode.
  • the terminal electrode material can be used for Ag
  • the terminal electrode of this example is an Ag/Ni/Sn three-layer terminal electrode.
  • the present invention is advantageous in that a substrate having a flat surface conforming to the requirements of a thin film circuit product is obtained by coating a glass glaze on an inexpensive unpolished ceramic substrate to replace a single crystal substrate (e.g., single crystal Si, LaA10 3 , Mg 0, sapphire, GaN, etc.) or mechanically polished substrates. Therefore, the present invention is of great significance for reducing the preparation cost of the NTC film thermistor.
  • the NTC film thermistor prepared by the invention has a special device structure including a glass glaze layer, a sensitive layer, an internal electrode, a protective layer and a terminal electrode, and the width of the oxide layer of the sensitive layer and the width of the internal electrode interdigitated finger are controlled. The gap and length can adjust the resistance and temperature sensitivity of the NTC film thermistor.
  • Figures 3 and 4 show the A1 2 0 A1 2 0 3 a scanning electron microscope the surface of the ceramic substrate (SEM) images of the ceramic substrate 3 and the non-mechanical polishing process according to the present invention can be seen
  • SEM surface of the ceramic substrate
  • RMS surface roughness
  • FIG. 5 is a three-dimensional atomic force microscope (AFM) image of the treated A1 2 0 3 substrate of the present invention. It can be seen that the surface of the substrate on which the glass glaze is prepared is flat, the RMS is 0.55 nm, and the height fluctuation is not more than 5 nm. .
  • AFM atomic force microscope
  • Figure 6 is a graph showing the resistance temperature characteristics of a typical NTC film thermistor. Over a wide temperature range (about 0 to 60 ° C), especially around 20 ° C, the NTC film thermistor changes with temperature. Larger, with more prominent temperature sensitivity.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Description

说明书
NTC薄膜热敏电阻及其制造方法
技术领域
本发明涉及薄膜元件， 特别涉及薄膜 NTC热敏电阻及其制造方法。
背景技术
Figure imgf000003_0001
Coefficient简写为 NTC) 热敏电阻器， 也称为 NTC热敏电阻器， 通常由 NTC 热敏材料构成， 如过渡金属氧化物半导体陶瓷材料等， 其阻值随着温度的升高 呈指数减小， 是理想的温度传感器材料。 现有技术中 NTC热敏电阻为块状， 其 主要缺点是， 由于块状材料体积大， 热容量大， 大大降低了 NTC热敏电阻的温 度响应速度； 高精度热敏电阻釆用陶瓷块材经切、 磨、 抛光等机械加工而成， 因而精度不高； 现有的 NTC热敏电阻通常不能实现大批量自动化生产， 因而产 品的一致性、 可靠性差， 成本高。
[3] 关于 NTC薄膜热敏电阻器， 日本专利 Tokkai
64-50501报道了利用过渡金属 Mn、 Ni、 Co、 Fe、 Cu氧化物薄膜制作 NTC热敏电 阻的技术。 因为这些材料的电阻率通常较高， 并且其电阻器的结构不合理， 做 成薄膜热敏电阻后， 阻值过大， 适用范围受到极大限制。 生产过程中， 高频溅 射成膜后需经过等离子处理， 制备过程耗吋太长。
[4] 日本专利 63-266801在敏感层薄膜的上下两面被上电极， 然而这种结构的 NTC 热敏电阻由于敏感层薄膜电阻极小， 电极直接被很薄的敏感层隔幵， 因此经常 出现短路。
[5] 美国专利 US 6,368,734 B1报道由 LaCo03
薄膜形成的 NTC薄膜热敏电阻。 这种 NTC薄膜热敏电阻具有比 Mn、 Ni、 Co、 Fe 、 Cu等过渡金属氧化物更低的电阻率， 其负温度系数非常小， 导致热敏电阻的 灵敏度低； 且因材料品种单一， 因而电阻率和温度系数不能实现系列化。
[6] 美国专利 US
6，880，134B2利用氮化硅对基片表面进行平坦化处理。 该方法不可能填平陶瓷基 板的微米级孔洞， 使其达到纳米级平整的表面。
[7] 现有薄膜技术使用的基片一般是价格昂贵的单晶基片 （如单晶 Si、 LaA103、
MgO、 蓝宝石、 GaN等） 或机械抛光陶瓷基片， 成本很高。 抛光陶瓷基片表面 存在微米级缺陷， 因而用作 NTC薄膜基片将使 NTC薄膜和内电极不连续， 出现 缺损、 断线、 短路等现象。
发明内容
[8] 本发明所要解决的技术问题， 就是提出一种利用玻璃釉进行基片表面平坦化处 理的方法， 使基片表面粗糙度从微米级达到纳米级， 满足薄膜器件制备要求。 本发明还利用叉指电极结构， 解决了过渡金属作为敏感材料制作的热敏电阻阻 值过高的问题。
[9] 本发明解决所述技术问题， 釆用的技术方案是：
[10] NTC薄膜热敏电阻， 包括基片、 敏感层、 内电极和端电极， 其特征在于， 所述 基片与敏感层之间有一层玻璃釉， 所述玻璃釉用于填平所述基片表面；
[11] 具体的， 所述敏感层由过渡金属氧化物薄膜构成。
[12] NTC薄膜热敏电阻制造方法， 包括以下步骤：
[13] A、 在陶瓷基片表面制备一层玻璃釉；
[14] B、 在所述玻璃釉表面制备敏感层；
[15] C、 在所述敏感层表面制备内电极；
[16] D、 制备保护层；
[17] E、 制备端电极；
[18] F、 切片， 得到片状薄膜电阻；
[19] 进一步的， 釆用溶胶-凝胶法制备玻璃釉， 具体步骤如下：
[20] A1 ) 配制含玻璃釉成分的溶胶；
[21] A2 ) 对陶瓷基片进行常规清洁处理；
[22] A3 ) 在所述基片上均匀被覆玻璃釉溶胶；
[23] A4 ) 溶胶的凝胶化和干燥；
[24] A5 ) 玻璃釉层烧结；
[25] 釆用反应溅射法制备敏感层， 所述敏感层材料为过渡金属氧化物， 具体步骤如 下：
[26] Bl ) 制备过渡金属氧化物靶材；
[27] B2 ) 将所述靶材溅射到基片上形成薄膜；
[28] B3 ) 敏感层退火处理；
[29] 釆用蒸发或溅射方式制备内电极， 所述内电极材料可以选用 Au、 Cu、 Al 或其他导电材料； 具体步骤如下：
[30] C1 ) 将内电极材料蒸发或溅射到敏感层表面形成一层导电层薄膜；
[31] C2 ) 对上述导电层薄膜进行刻蚀形成叉指电极；
[32] 釆用电镀工艺制备 Ag/Ni/Sn三层电极。
[33] 本发明的有益效果是， 釆用表面被覆玻璃釉的工艺， 对廉价的陶瓷基片表面进 行平坦化处理的方法， 降低了 NTC薄膜热敏电阻的制造成本， 改进了 NTC薄膜 热敏电阻的结构， 提高了可靠性和产量。 釆用过渡金属氧化物作为敏感材料， 提高了 NTC薄膜热敏电阻的性能， 扩大了适用范围。 本发明的 NTC薄膜热敏电 阻其阻值， 可通过调节材料配方或内电极叉指的宽度、 间隙、 长度来控制。 因 此， 本发明提供了一种降低成本、 改善可靠性和产量的 NTC薄膜热敏电阻制造 方法。
附图说明
[34] 图 1是 NTC薄膜热敏电阻的结构示意图；
[35] 其中： 1一陶瓷基片， 2—玻璃釉层， 3—敏感层， 4一内电极， 5
一保护层， 6—端电极；
[36] 图 2是 NTC薄膜热敏电阻制备流程图；
[37] 图 3是陶瓷基片的 SEM图；
[38] 图 4是陶瓷基片表面制备的玻璃釉的 SEM图；
[39] 图 5是陶瓷基片表面制备的玻璃釉的三维 AFM图；
[40] 图 6是典型的 NTC薄膜热敏电阻的电阻温度特性曲线。
具体实施方式
[41] 本发明釆用在基片表面制备玻璃釉的工艺方法， 对基片表面进行平坦化处理， 结合先进的反应溅射工艺制备过渡金属氧化物薄膜作为敏感层， 并进一步釆用 蚀刻的叉指电极作为内电极， 提高了 NTC热敏电阻的精度， 扩大了适用范围。
[42] 实施例
[43] 参见图 1， 本例的 NTC薄膜热敏电阻， 由基片 1、 玻璃釉 2、 敏感层 3、 内电极 4 、 保护层 5以及端电极 6构成。 位于基片 1与敏感层 3之间的玻璃釉 2填充在基片 1 表面的凹坑中， 使基片 2表面变得平坦。 敏感层由过渡金属氧化物薄膜构成， 如 Mn, Ni， Co, Fe, Cu等的氧化物薄膜。 图 1中， 内电极 4由一层导电金属薄膜构 成， 并且内电极 4通过蚀刻工艺加工成梳状电极结构 （或称为叉指电极结构） 。 这种电极结构， 增加了电流载流面积， 可以大大地降低电阻值， 通过调整叉指 的宽度、 间隙、 长度， 可以精确控制电阻值。 本例的基片 1釆用 A1203陶瓷基片， 由于在敏感层 3与基片 1之间制备了一层玻璃釉， 能够填平 A1203陶瓷基片表面的 凹坑， 所以本例基片 1不需要进行机械抛光处理。
[44] 本例 NTC薄膜热敏电阻制造流程如图 2所示， 工艺步骤如下：
[45] A、 在未抛光的 A1203
陶瓷基片表面制备一层玻璃釉： 釆用溶胶-凝胶法制备玻璃釉， 具体步骤如下
[46] A1、 釆用正硅酸乙酯作为络合剂， 配制 CaAISi系或 MgAISi系玻璃釉溶胶； [47] A2、 对陶瓷基片进行常规清洁处理；
[48] A3、 在上述基片上均匀被覆玻璃釉溶胶； 被覆玻璃釉溶胶的方法为旋涂或提拉 或喷涂或浸渍；
[49] A4、 玻璃釉溶胶的凝胶化和干燥；
[50] A5、 高温烧结处理。
[51] 在上述玻璃釉制备过程中， 选择合适的配方使玻璃釉的软化温度达到 1100〜 1500 °C是容易的， 玻璃釉有较高的软化温度可以避免在后续工艺中带来麻烦 。 另一方面， 玻璃釉中不含碱金属离子， 有利于提高玻璃釉的电性能指标。
[52] B、 在所述玻璃釉表面制备敏感层： 釆用反应溅射工艺制备敏感层， 敏感层材 料为过渡金属氧化物； 具体步骤如下：
[53] B1、 制备过渡金属氧化物靶材；
[54] B2、 釆用反应溅射工艺在玻璃釉表面形成过渡金属氧化物薄膜； [55] B3、 退火处理。
[56] C、 在所述敏感层表面制备内电极： 釆用蒸发或溅射工艺制备内电极， 内电极 材料可以选用 Au、 Al、 Pd、 Cu或其他导电材料； 具体步骤如下：
[57] Cl、 将内电极材料蒸发或溅射到敏感层表面形成一层导电薄膜；
[58] C2、 对上述导电层薄膜进行干法或湿法刻蚀形成叉指电极。
[59] D、 制备保护层： 釆用 PECVD或溅射工艺在内电极上制备一层 Si02、 Si3N4 层， 并经刻蚀露出端头导电层， 以便制备端电极。
[60] E、 制备端电极； 釆用烧银或电镀方法制备端电极， 端电极材料可以釆用 Ag、
Ni、 Sn或其他导电金属， 本例的端电极为 Ag/Ni/Sn三层端电极。
[61] F、 切片， 得到片状薄膜电阻。
[62] 本发明的优越性在于： 通过在廉价未抛光的陶瓷基片上涂覆玻璃釉， 获得表面 平坦符合薄膜电路产品要求的基片， 以替代单晶基片 （如单晶 Si、 LaA103、 Mg 0、 蓝宝石、 GaN等） 或机械抛光基片。 因此， 本发明对降低 NTC薄膜热敏电阻 的制备成本有重大意义。 同吋， 本发明制备的 NTC薄膜热敏电阻具有包括玻璃 釉层、 敏感层、 内电极、 保护层以及端电极的特殊器件结构， 通过控制敏感层 薄膜氧化物成分及内电极叉指的宽度、 间隙、 长度， 可以调节 NTC薄膜热敏电 阻的阻值和温度敏感系数。
[63] 图 3和图 4分别示出了未经机械抛光的 A1203陶瓷基片和本发明处理后的 A1203陶 瓷基片表面的扫描电子显微镜 （SEM) 图像， 可以看出， 经过本发明处理的基 片 （图 4) 表面粗糙度 （RMS) 指标得到了明显的改善， 其指标优于经过机械抛 光处理的基片。
[64] 图 5为本发明处理后的 A1203基片的三维原子力显微镜 （AFM) 图像， 可以看出 ， 制备了玻璃釉的基片表面平整， RMS为 0.55nm， 高低起伏不超过 5nm。
[65] 图 6是典型的 NTC薄膜热敏电阻的电阻温度特性曲线， 在较大的温度范围 （约 0 〜60°C) ， 特别是在 20°C左右， NTC薄膜热敏电阻随温度变化比较大， 具有比较 突出的温度敏感特性。

Claims

权利要求书
[1] NTC薄膜热敏电阻， 包括基片、 敏感层、 内电极和端电极， 其特征在于， 所述基片与敏感层之间有一层玻璃釉， 所述玻璃釉用于填平所述基片表面
[2] 根据权利要求 1所述的 NTC薄膜热敏电阻， 其特征在于， 所述敏感层由过渡 金属氧化物薄膜构成。
[3] 根据权利要求 1或 2所述的 NTC薄膜热敏电阻， 其特征在于， 所述内电极具 有叉指电极结构。
[4] 根据上述任意一项权利要求所述的 NTC薄膜热敏电阻， 其特征在于， 所述 基片为未经机械抛光的陶瓷基片。
[5] 根据权利要求 4所述的 NTC薄膜热敏电阻， 其特征在于， 所述陶瓷基片材料 为 Al2 03
[6] NTC薄膜热敏电阻制造方法， 包括以下步骤：
A、 在陶瓷基片表面制备一层玻璃釉；
B、 在所述玻璃釉表面制备敏感层；
C、 在所述敏感层表面制备内电极；
D、 制备保护层；
E、 制备端电极；
F、 切片， 得到片状薄膜电阻。
[7] 根据权利要求 6所述的 NTC薄膜热敏电阻制造方法， 其特征在于， 步骤 A中
， 釆用溶胶-凝胶法制备玻璃釉， 具体步骤如下：
A1) 配制含玻璃釉成分的溶胶；
A2) 对陶瓷基片进行常规清洁处理；
A3) 在所述基片上均匀被覆玻璃釉溶胶；
A4) 溶胶的凝胶化和干燥；
A5) 玻璃釉层烧结。
[8] 根据权利要求 7所述的 NTC薄膜热敏电阻制造方法， 其特征在于， 所述玻璃 釉为不含碱金属离子的 CaAISi系或 MgAISi系玻璃釉。
[9] 根据权利要求 7所述的 NTC薄膜热敏电阻制造方法， 其特征在于， 步骤 A1 中， 釆用正硅酸乙酯作为络合剂。
[10] 根据权利要求 7所述的 NTC薄膜热敏电阻制造方法， 其特征在于， 步骤 A3 中， 被覆玻璃釉溶胶的方法为旋涂或提拉或喷涂或浸渍。
[11] 根据权利要求 6〜10任意一项所述的 NTC薄膜热敏电阻制造方法， 其特征在 于， 所述玻璃釉的软化温度为 1100〜1500°C。
[12] 根据权利要求 6所述的 NTC薄膜热敏电阻制造方法， 其特征在于， 步骤 B中
， 釆用反应溅射法制备敏感层， 所述敏感层材料为过渡金属氧化物， 具体 步骤如下：
B1) 制备过渡金属氧化物靶材；
B2) 将所述靶材溅射到玻璃釉表面形成薄膜；
B3) 敏感层退火处理。
[13] 根据权利要求 6所述的 NTC薄膜热敏电阻制造方法， 其特征在于， 步骤 C中
， 釆用蒸发或溅射方式制备内电极， 所述内电极材料可以选用 Au、 Cu、 Al 或其他导电材料； 具体步骤如下：
C1) 将内电极材料蒸发或溅到敏感层表面形成一层导电薄膜； C2) 对上述导电层薄膜进行刻蚀形成叉指电极。
[14] 根据权利要求 6所述的 NTC薄膜热敏电阻制造方法， 其特征在于， 所述端电 极为 Ag或 Ag/Ni/Sn三层端电极。
PCT/CN2008/073343 2008-03-12 2008-12-05 Ntc薄膜热敏电阻及其制造方法 Ceased WO2009111937A1 (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180321091A1 (en) * 2015-11-02 2018-11-08 Epcos Ag Sensor Element and Method for Producing a Sensor Element
CN115615573A (zh) * 2022-11-03 2023-01-17 北京航空航天大学 一种超薄透明的薄膜温度传感器及其制备方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8118485B2 (en) * 2008-09-04 2012-02-21 AGlobal Tech, LLC Very high speed thin film RTD sandwich
CN103295708B (zh) * 2012-03-02 2016-01-06 东莞市仙桥电子科技有限公司 可回收型ntc热敏电阻
JP5543537B2 (ja) * 2012-07-24 2014-07-09 太陽誘電株式会社 圧電素子
US20150108632A1 (en) * 2013-10-23 2015-04-23 Nano And Advanced Materials Institute Limited Thin film with negative temperature coefficient behavior and method of making thereof
DE102015225584A1 (de) * 2015-12-17 2017-06-22 Robert Bosch Gmbh Startvorrichtung für eine Brennkraftmaschine
DE112021002516T5 (de) 2020-04-27 2023-04-06 Yazaki North America, Inc. System zur entlastung von batterien mit bypass
WO2021222080A1 (en) * 2020-04-27 2021-11-04 Yazaki North America, Inc. Battery stress relief system
CN112735709A (zh) * 2020-12-26 2021-04-30 广东工业大学 一种薄膜型负温度系数传感器及其制备方法
CN114134457B (zh) * 2021-12-07 2023-11-24 中国科学院新疆理化技术研究所 一种类光栅结构复合ntc热敏薄膜的制备方法
CN116147793A (zh) * 2023-02-10 2023-05-23 智新半导体有限公司 一种测温芯片、芯片结构及制造方法
CN117819968A (zh) * 2023-06-21 2024-04-05 中国科学院新疆理化技术研究所 一种高温区负温度系数热敏陶瓷材料及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1477652A (zh) * 2003-07-04 2004-02-25 华中科技大学 一种叠层片式ptc电阻器的制备方法
JP2006344776A (ja) * 2005-06-09 2006-12-21 Alpha Electronics Corp チップ抵抗器とその製造方法
CN101241786A (zh) * 2008-03-12 2008-08-13 电子科技大学 Ntc薄膜热敏电阻及制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2507731C3 (de) * 1975-02-22 1978-09-07 Deutsche Gold- Und Silber-Scheideanstalt Vormals Roessler, 6000 Frankfurt Meßwiderstand für Widerstandsthermometer und Verfahren zu seiner Herstellung
US4546065A (en) * 1983-08-08 1985-10-08 International Business Machines Corporation Process for forming a pattern of metallurgy on the top of a ceramic substrate
US4632846A (en) * 1984-09-17 1986-12-30 Kyocera Corporation Process for preparation of glazed ceramic substrate and glazing composition used therefor
JP3494747B2 (ja) * 1995-03-31 2004-02-09 石塚電子株式会社 薄膜温度センサ及びその製造方法
US6172592B1 (en) * 1997-10-24 2001-01-09 Murata Manufacturing Co., Ltd. Thermistor with comb-shaped electrodes
US6004471A (en) * 1998-02-05 1999-12-21 Opto Tech Corporation Structure of the sensing element of a platinum resistance thermometer and method for manufacturing the same
JP3489000B2 (ja) * 1998-11-06 2004-01-19 株式会社村田製作所 Ｎｔｃサーミスタ、チップ型ｎｔｃサーミスタ及び感温抵抗薄膜素子の製造方法
US6880234B2 (en) * 2001-03-16 2005-04-19 Vishay Intertechnology, Inc. Method for thin film NTC thermistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1477652A (zh) * 2003-07-04 2004-02-25 华中科技大学 一种叠层片式ptc电阻器的制备方法
JP2006344776A (ja) * 2005-06-09 2006-12-21 Alpha Electronics Corp チップ抵抗器とその製造方法
CN101241786A (zh) * 2008-03-12 2008-08-13 电子科技大学 Ntc薄膜热敏电阻及制备方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180321091A1 (en) * 2015-11-02 2018-11-08 Epcos Ag Sensor Element and Method for Producing a Sensor Element
US10908030B2 (en) * 2015-11-02 2021-02-02 Epcos Ag Sensor element and method for producing a sensor element
CN115615573A (zh) * 2022-11-03 2023-01-17 北京航空航天大学 一种超薄透明的薄膜温度传感器及其制备方法

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