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WO2009111473A3 - Method for curing a porous low dielectric constant dielectric film - Google Patents

Method for curing a porous low dielectric constant dielectric film Download PDF

Info

Publication number
WO2009111473A3
WO2009111473A3 PCT/US2009/035878 US2009035878W WO2009111473A3 WO 2009111473 A3 WO2009111473 A3 WO 2009111473A3 US 2009035878 W US2009035878 W US 2009035878W WO 2009111473 A3 WO2009111473 A3 WO 2009111473A3
Authority
WO
WIPO (PCT)
Prior art keywords
curing
dielectric film
dielectric constant
porous low
low dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/035878
Other languages
French (fr)
Other versions
WO2009111473A2 (en
Inventor
Junjun Liu
Dorel I. Toma
Eric M. Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/043,814 external-priority patent/US7977256B2/en
Priority claimed from US12/043,772 external-priority patent/US7858533B2/en
Priority claimed from US12/043,835 external-priority patent/US20090226694A1/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN2009801078443A priority Critical patent/CN101960556B/en
Priority to DE112009000518T priority patent/DE112009000518T5/en
Priority to JP2010549819A priority patent/JP5490024B2/en
Publication of WO2009111473A2 publication Critical patent/WO2009111473A2/en
Publication of WO2009111473A3 publication Critical patent/WO2009111473A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P14/6922—
    • H10P34/00—
    • H10P14/6334—
    • H10P14/6536—
    • H10P14/6538—
    • H10P14/665—
    • H10P14/6686—
    • H10P95/00—
    • H10P95/90—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.
PCT/US2009/035878 2008-03-06 2009-03-03 Method for curing a porous low dielectric constant dielectric film Ceased WO2009111473A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801078443A CN101960556B (en) 2008-03-06 2009-03-03 Method for curing porous low-k dielectric films
DE112009000518T DE112009000518T5 (en) 2008-03-06 2009-03-03 A method of curing a porous dielectric film having a low dielectric constant
JP2010549819A JP5490024B2 (en) 2008-03-06 2009-03-03 Method of curing porous low dielectric constant dielectric film

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US12/043,814 US7977256B2 (en) 2008-03-06 2008-03-06 Method for removing a pore-generating material from an uncured low-k dielectric film
US12/043,772 US7858533B2 (en) 2008-03-06 2008-03-06 Method for curing a porous low dielectric constant dielectric film
US12/043,814 2008-03-06
US12/043,835 2008-03-06
US12/043,835 US20090226694A1 (en) 2008-03-06 2008-03-06 POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING
US12/043,772 2008-03-06

Publications (2)

Publication Number Publication Date
WO2009111473A2 WO2009111473A2 (en) 2009-09-11
WO2009111473A3 true WO2009111473A3 (en) 2010-01-14

Family

ID=41056604

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/035878 Ceased WO2009111473A2 (en) 2008-03-06 2009-03-03 Method for curing a porous low dielectric constant dielectric film

Country Status (6)

Country Link
JP (2) JP5490024B2 (en)
KR (1) KR101538531B1 (en)
CN (2) CN101960556B (en)
DE (1) DE112009000518T5 (en)
TW (1) TWI421939B (en)
WO (1) WO2009111473A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8242460B2 (en) * 2010-03-29 2012-08-14 Tokyo Electron Limited Ultraviolet treatment apparatus
JP2012104703A (en) * 2010-11-11 2012-05-31 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device and substrate processing apparatus
CN104143524A (en) * 2013-05-07 2014-11-12 中芯国际集成电路制造(上海)有限公司 Manufacturing method for semiconductor device
US10109478B2 (en) * 2016-09-09 2018-10-23 Lam Research Corporation Systems and methods for UV-based suppression of plasma instability
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
WO2020154310A1 (en) 2019-01-22 2020-07-30 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030224544A1 (en) * 2001-12-06 2003-12-04 Shipley Company, L.L.C. Test method
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US20040096672A1 (en) * 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films
US20070105401A1 (en) * 2005-11-09 2007-05-10 Tokyo Electron Limited Multi-step system and method for curing a dielectric film

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1323189A2 (en) * 2000-09-13 2003-07-02 Shipley Company LLC Electronic device manufacture
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
JP3726071B2 (en) * 2002-06-05 2005-12-14 東京エレクトロン株式会社 Heat treatment method
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
TWI240959B (en) * 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US6897162B2 (en) * 2003-10-20 2005-05-24 Wafermasters, Inc. Integrated ashing and implant annealing method
US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US20070173071A1 (en) * 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
JP2007214156A (en) * 2006-02-07 2007-08-23 Yatabe Hitoo Semiconductor device
JP2007324170A (en) * 2006-05-30 2007-12-13 Yoshimi Shiotani Irradiation device and semiconductor production system employing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US20030224544A1 (en) * 2001-12-06 2003-12-04 Shipley Company, L.L.C. Test method
US20040096672A1 (en) * 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films
US20040096593A1 (en) * 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films
US20070105401A1 (en) * 2005-11-09 2007-05-10 Tokyo Electron Limited Multi-step system and method for curing a dielectric film

Also Published As

Publication number Publication date
JP5490024B2 (en) 2014-05-14
CN101960556B (en) 2013-09-18
KR101538531B1 (en) 2015-07-21
CN101960556A (en) 2011-01-26
TWI421939B (en) 2014-01-01
TW200949941A (en) 2009-12-01
DE112009000518T5 (en) 2011-05-05
WO2009111473A2 (en) 2009-09-11
JP2011514678A (en) 2011-05-06
KR20120041641A (en) 2012-05-02
CN102789975B (en) 2015-10-14
JP2014007416A (en) 2014-01-16
CN102789975A (en) 2012-11-21

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