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WO2009100809A2 - Convertisseur thermoélectrique et procédé de fabrication correspondant - Google Patents

Convertisseur thermoélectrique et procédé de fabrication correspondant Download PDF

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Publication number
WO2009100809A2
WO2009100809A2 PCT/EP2009/000436 EP2009000436W WO2009100809A2 WO 2009100809 A2 WO2009100809 A2 WO 2009100809A2 EP 2009000436 W EP2009000436 W EP 2009000436W WO 2009100809 A2 WO2009100809 A2 WO 2009100809A2
Authority
WO
WIPO (PCT)
Prior art keywords
carrier substrate
structural elements
surface structure
dimensional surface
thermocouples
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/000436
Other languages
German (de)
English (en)
Other versions
WO2009100809A3 (fr
Inventor
Ullrich Hetzler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IsabellenHuette Heusler GmbH and Co KG
Isabellen Huette GmbH
Original Assignee
IsabellenHuette Heusler GmbH and Co KG
Isabellen Huette GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IsabellenHuette Heusler GmbH and Co KG, Isabellen Huette GmbH filed Critical IsabellenHuette Heusler GmbH and Co KG
Publication of WO2009100809A2 publication Critical patent/WO2009100809A2/fr
Publication of WO2009100809A3 publication Critical patent/WO2009100809A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

Definitions

  • thermoelectric converter in particular a thermoelectric generator
  • thermoelectric generator an associated manufacturing method according to the independent claims.
  • Thermoelectric generators in the form of so-called thermal columns are known, for example, from DE 10 2007 009 221 A1, DE 20 2006 003 595 U1 and DE 10 2006 007 801 A1 and can be used, inter alia, for level measurement in a fuel tank or for temperature measurement.
  • thermocouples are applied to a flat carrier material, which may be a plastic film.
  • thermopile according to DE 20 2006 003 595 U1
  • an elongate strand serves as a carrier element for the individual thermocouples.
  • thermopiles described above are not suitable for microstructuring, so that the production of these known thermopiles is relatively expensive.
  • thermoelectric converter according to the invention and a corresponding manufacturing method according to the independent claims.
  • the invention comprises the general technical teaching that the carrier substrate for the individual thermocouples has a three-dimensional surface structure with elevations and depressions as structural elements.
  • the individual thermocouples have hot contact points and cold contact points, wherein the hot contact points and the cold contact points are arranged alternately on the elevations and in the depressions of the three-dimensional surface structure of the carrier substrate.
  • the hot contact points are thus each on the elevations of the three-dimensional surface structure, while the cold contact points are located in the depressions of the three-dimensional surface structure.
  • thermocouples are each in the depressions of the three-dimensional surface structure, while the cold contact points of the individual thermocouples are each arranged on the elevations of the three-dimensional surface structure of the carrier substrate.
  • the elevations and depressions of the three-dimensional surface structure of the carrier substrate are elongated and thus preferably form protruding ribs or depressions.
  • the individual thermocouples preferably extend with their electrical current direction each transverse to the elongated structural elements of the carrier substrate. This orientation of the thermocouples relative to the structural elements of the three-dimensional surface structure is advantageous because in this way a plurality of thermopiles can be formed by dividing the carrier substrate with the applied thermocouples in the longitudinal direction of the thermopile and transversely to the elongate structural elements, as described in more detail becomes.
  • the individual structural elements preferably each have two lateral flanks, wherein the two conductor layers of the individual thermocouples are respectively applied to the immediately adjacent lateral flanks.
  • each of the two side edges of the rib can each receive a leg of the same thermocouple in the form of a conductor layer.
  • the conductor material is preferably applied obliquely, for example by vapor deposition or sputtering.
  • the oblique application of the conductor layers offers the advantage that the rib-shaped structural elements in each case shade one of its two side edges, so that the conductor material is applied in each case only to a single side edge.
  • the conductor material must then be applied at a corresponding oblique angle from the other side.
  • the conductor material is therefore preferably not applied exactly at right angles to the surface of the carrier substrate, but with a certain angle of incidence to the surface of the carrier substrate.
  • the angle of incidence of the conductor material may for example be greater than 40 °, 50 °, 60 °, 70 ° or even greater than 80 °, based on the surface of the carrier substrate. Furthermore, the angle of incidence of the conductor material - with respect to the surface of the carrier substrate - can be less than 85 °, 80 °, 70 °, 60 ° or even less than 50 °. Thus, the angle of incidence is preferably in a range of 40 ° to 85 °.
  • the elongate structural elements (e.g., ridges, troughs) of the three-dimensional surface structure of the carrier substrate are preferably aligned substantially parallel to one another and / or substantially perpendicular to the individual thermocouples or thermopiles.
  • the structural elements of the three-dimensional surface structure of the carrier substrate are at least partially hollow, since in this way the thermal conductivity of the structural elements is reduced.
  • the carrier substrate itself is flat and forms the structural elements (eg ribs, depressions) by its shape, so that the carrier substrate is, for example, corrugated sheet-shaped can be.
  • the carrier substrate may therefore have structural elements on the front side and on the rear side, wherein the structural elements on the front side are formed inversely or complementarily to the structural elements on the rear side. This means, for example, that a rib on the front side of the carrier substrate at the back as a trough in appearance.
  • the individual structural elements and / or the carrier substrate are preferably not only made of an electrically insulating material, but preferably also of a thermally insulating material.
  • thermopile according to DE 20 2006 003 595 Ul A difference compared to the above-mentioned thermopile according to DE 20 2006 003 595 Ul is further that the
  • Support substrate is flat in itself and has only a three-dimensional surface structure.
  • the three-dimensional surface structure of the carrier substrate is preferably a microstructure.
  • the individual structural elements for example ribs, depressions
  • the spacing and / or the width of the structural elements may thus be less than 5mm, 2mm, 1mm, 500 ⁇ m, 250 ⁇ m, 100 ⁇ m, 50 ⁇ m, or even less than 25 ⁇ m.
  • this microstructuring of the surface structure of the carrier substrate is advantageous because in this way a large packing density of the thermocouples can be achieved.
  • the area-related packing density of the thermocouples on the carrier substrate can be greater than the learning " 2 , 10 cm “ 2 , 100 cm 2 , 1,000 cm 2 or even 10,000 cm 2 .
  • the microstructuring of the surface structure of the carrier substrate is advantageous because the processing of the carrier substrate can thereby be carried out very efficiently with conventional patterning methods, which are known, for example, from semiconductor technology.
  • the individual structural elements of the three-dimensional surface structure of the carrier substrate may, for example, have a triangular or trapezoidal cross-section.
  • thermopiles can be arranged on the carrier substrate, which are electrically connected in series one behind the other, wherein the individual thermopiles can each be arranged transversely to the elongated structural elements and next to one another.
  • the individual thermopiles may in this case contain more than 10, 20, 50 or even more than 100 thermocouples, while a total of more than 10, 20, 50 or even more than 100 such thermopiles can be accommodated on the carrier substrate.
  • the inventive thermoelectric converter can therefore have more than 100, 500, 1000, 2500, 5000 or even more than 10,000 thermocouples.
  • thermoelectric converter according to the invention preferably has an electrically insulating upper layer which covers the carrier substrate with the thermocouples applied thereto on its upper side, while the carrier substrate is preferably covered on its underside by an electrically insulating lower layer.
  • the topsheet and / or the backsheet are preferably made of a thermally conductive material to thermally contact the thermopile.
  • the topsheet and the backsheet may be made of a ceramic material or a coated metal.
  • thermoelectric converter according to the invention also includes a corresponding manufacturing method, as already apparent from the foregoing description.
  • the three-dimensional surface structure of the carrier substrate can be produced, for example, by (micro) injection molding, laser etching or by chemical etching.
  • the conductor layers of the individual thermocouples can be vapor-deposited, sputtered on, printed on, tested on, or galvanically applied, for example, to the three-dimensional surface structure of the carrier substrate, to name but a few possible production methods.
  • the individual thermal columns are preferably aligned at right angles to the elongate structural elements (eg ribs, hollows), which is advantageous in the production of a large number of thermopiles.
  • the carrier substrate with the thermopiles applied thereto is in each case between the directly adjacent thermopile in the longitudinal direction of the thermopile divided, so that each separated part contains at least one thermopile.
  • the thermopile on the individual separated parts are then preferably connected again in series electrically in series.
  • thermopiles applied thereon can be carried out, for example, by etching or by laser irradiation, for which example an ultraviolet laser or a picosecond laser can be used.
  • thermoelectric converter an electrically insulating upper layer is preferably applied to the upper side of the carrier substrate with the thermopiles applied thereon in order to thermally contact the thermoelectric converter.
  • an electrically insulating but thermally conductive underlayer is preferably applied to the underside of the carrier substrate for thermal contacting of the thermoelectric converter.
  • the upper layer and / or the lower layer can be adhered, but other attachment options are conceivable within the scope of the invention.
  • a ceramic material or coated metal is suitable.
  • FIGS. 1A-1E show various successive production stages of a thermoelectric converter according to the invention
  • FIG. 2 is a perspective view of a thermoelectric transducer according to the invention without the carrier substrate, as well as
  • FIG. 3 shows the production method according to the invention in the form of a flow chart.
  • a carrier substrate 1 which consists of an electrically and thermally insulating material and in the simplest case may be plate-shaped.
  • a microstructuring of the carrier substrate 1 then takes place to form a three-dimensional surface structure in the carrier substrate 1, the three-dimensional surface structure having a plurality of elongated structural elements 2 in the form of ribs.
  • the microstructuring of the carrier substrate 1 can be effected for example by hot stamping, micro-injection molding, laser etching or by chemical etching.
  • the rib-shaped structural elements 2 can each have a continuous cavity 3 in order to increase the thermal conductivity of the rib-shaped structural elements. 2 and thereby improve the functionality of thermocouples applied thereto.
  • step S2 After the microstructuring of the carrier substrate 1 in step S2, the production stage shown in FIG. 1A is present.
  • the rib-shaped structural elements 2 each have two lateral flanks 4, 5.
  • a conductor layer 6 is then applied to the side flank 5 of the individual rib-shaped structural elements 2.
  • This application of the conductor layer 6 can take place, for example, by vapor deposition or sputtering, as is schematically indicated in FIG. 1B by the block arrows.
  • the conductor material for the conductor layer 6 is in this case applied at an angle of incidence ⁇ «70 ° obliquely on the side edges 5, for example by sputtering or vapor deposition.
  • This oblique application of the conductor material is advantageous because the individual rib-shaped structural elements 2 shade the other side edges 4, so that the side edges 4 are not coated with the conductor material in this method step.
  • a conductor layer 7 is then also applied to the opposite side flank 4 of the rib-shaped structural elements 2, which is achieved by applying sputtering or vapor deposition can take place, as indicated in Figure IC by the block arrows.
  • the conductor material for the conductor layer 7 is in this case applied at an angle of incidence ⁇ «70 ° obliquely on the side edges 4.
  • This oblique application of the conductor material is again advantageous because the individual rib-shaped structural elements 2 shade the side flanks 5 already coated with the conductor layer 6, so that the side flanks 5 are not coated with the conductor material in this method step.
  • the two conductor layers 6, 7 each form a leg of a thermocouple, so that the conductor layers 6, 7 overlap at the top of the rib-shaped structural elements 2 and form a contact point.
  • the adjacent conductor layers 6, 7 also overlap in the trough between the adjacent rib-shaped structural elements 2 and form a further contact point there.
  • thermocouple It is important here that the two conductor layers 6, 7 consist of materials with different thermal forces, so that the immediately adjacent conductor layers 6, 7 each form a thermocouple.
  • step S4 the production stage according to FIG.
  • the carrier substrate 1 with the thermocouples applied thereto is then divided at right angles to the elongated rib-shaped structural elements 2 along predetermined separating lines 8 in the longitudinal direction of thermal columns 9.
  • the parts formed in this way each contain one of the thermopile 9.
  • the isolated Thermokla- len 9 are then electrically connected together in a series circuit.
  • corresponding conductor tracks can be arranged on the top layer 10 or on the base 11.
  • a step S6 an electrically and thermally insulating top layer 10 and an electrically and thermally insulating base 11 are glued, the top layer 10 covering the carrier substrate 1 with the thermocouples applied to it at its upper side, while the base 11 covers the carrier substrate 1 covered with the applied thermocouples on its underside.
  • step S6 the provisionally final production stage according to FIG. IE is then present, it being possible for further finishing steps to follow within the scope of the production method according to the invention.
  • thermoelectric converter 12 shows a thermoelectric converter 12 with all the required functional elements.
  • Figure 2 shows a perspective view of an alternative embodiment of a thermoelectric transducer 13 in an intermediate stage of manufacture without the underlying carrier substrate.
  • thermopile 16 applied to the side edges of the rib-shaped structural elements of the carrier substrate.
  • carrier substrate with thermopile 16 applied thereto is divided into several parts along certain parting lines 17, the individual parts each containing one of the thermopiles 16.
  • FIG. 2 shows an intermediate stage of the production in which the carrier substrate is flat and corrugated-like shaped in order to form the rib-shaped structural elements.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

L'invention concerne un convertisseur thermoélectrique (12), en particulier un générateur thermoélectrique, comprenant un substrat support (1) et au moins une thermopile comportant une pluralité de thermocouples qui sont connectés électriquement en série et montés sur le substrat support (1). L'invention se caractérise en ce que le substrat support (1) présente une structure de surface en trois dimensions comprenant des éléments structuraux (2) sous forme de creux et de bosses.
PCT/EP2009/000436 2008-02-15 2009-01-23 Convertisseur thermoélectrique et procédé de fabrication correspondant Ceased WO2009100809A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008009428A DE102008009428A1 (de) 2008-02-15 2008-02-15 Thermo-elektrischer Wandler und zugehöriges Herstellungsverfahren
DE102008009428.5 2008-02-15

Publications (2)

Publication Number Publication Date
WO2009100809A2 true WO2009100809A2 (fr) 2009-08-20
WO2009100809A3 WO2009100809A3 (fr) 2010-02-04

Family

ID=40679255

Family Applications (1)

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PCT/EP2009/000436 Ceased WO2009100809A2 (fr) 2008-02-15 2009-01-23 Convertisseur thermoélectrique et procédé de fabrication correspondant

Country Status (2)

Country Link
DE (1) DE102008009428A1 (fr)
WO (1) WO2009100809A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013067148A1 (fr) * 2011-11-02 2013-05-10 Cardinal Solar Technologies Company Technologie de dispositif thermoélectrique
WO2016046713A1 (fr) * 2014-09-22 2016-03-31 Consorzio Delta Ti Research Générateur thermoélectrique de flux de chaleur hors plan, à silicium intégré
WO2016051313A1 (fr) * 2014-10-01 2016-04-07 Consorzio Delta Ti Research Générateur thermoélectrique de type "bivalve" intégré sur silicium à configuration de flux de chaleur hors plan
WO2016055892A1 (fr) * 2014-10-09 2016-04-14 Consorzio Delta Ti Research Générateur thermoélectrique intégré 3d fonctionnant dans une configuration à flux thermique hors plan comportant des vides internes et des trous d'interconnexion conditionnant des trajets de conduction thermique
CN110678993A (zh) * 2017-03-07 2020-01-10 马勒国际有限公司 用于制造热电模块的方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009043413B3 (de) * 2009-09-29 2011-06-01 Siemens Aktiengesellschaft Thermo-elektrischer Energiewandler mit dreidimensionaler Mikro-Struktur, Verfahren zum Herstellen des Energiewandlers und Verwendung des Energiewandlers
DE102015107240B8 (de) 2014-05-09 2022-05-19 Analog Devices, Inc. Thermoelektrischer Energiesammler im Wafermaßstab und Verfahren zur Herstellung eines thermoelektrischen Sammlers
DE102017217124A1 (de) 2017-09-26 2019-03-28 Mahle International Gmbh Verfahren zum Herstellen eines thermoelektrischen Wandlers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303469A (ja) * 1997-04-23 1998-11-13 Sharp Corp 薄膜熱電変換素子及びそれを用いた半導体デバイス及びそれを用いたプリント基板
DE10004390C2 (de) * 2000-02-02 2002-05-02 Infineon Technologies Ag Thermoelektrischer Generator und Verfahren zu seiner Herstellung
JP2005259944A (ja) * 2004-03-11 2005-09-22 Nagoya Industrial Science Research Inst 薄膜熱電半導体装置およびその製造方法
EP1612870A1 (fr) * 2004-07-01 2006-01-04 Interuniversitair Microelektronica Centrum Vzw Procéde de fabrication d'un générateur thermoélectrique et générateur thermoélectrique obtenu
US7544883B2 (en) * 2004-11-12 2009-06-09 International Business Machines Corporation Integrated thermoelectric cooling devices and methods for fabricating same
DE102006007801A1 (de) 2006-02-20 2007-08-30 Isabellenhütte Heusler Gmbh & Co. Kg Füllstandssensor und zugehöriges Betriebs- und Herstellungsverfahren sowie entsprechende Verwendung
DE202006003595U1 (de) 2006-03-07 2006-05-11 Isabellenhütte Heusler Gmbh & Co. Kg Thermosäule
DE102007009221B4 (de) 2006-03-07 2013-01-17 Isabellenhütte Heusler Gmbh & Co. Kg Thermosäulenstrang, thermoelektrischer Generator mit einem Thermosäulenstrang, Verfahren zur Herstellung eines thermoelektrischen Generators sowie Maschine zur Durchführung des Verfahrens
DE202008003271U1 (de) * 2008-02-15 2008-05-15 Isabellenhütte Heusler Gmbh & Co. Kg Thermo-elektrischer Wandler

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013067148A1 (fr) * 2011-11-02 2013-05-10 Cardinal Solar Technologies Company Technologie de dispositif thermoélectrique
US9882110B2 (en) 2011-11-02 2018-01-30 Cardinal Cg Company Thermoelectric device technology
WO2016046713A1 (fr) * 2014-09-22 2016-03-31 Consorzio Delta Ti Research Générateur thermoélectrique de flux de chaleur hors plan, à silicium intégré
US10050190B2 (en) 2014-09-22 2018-08-14 Consorzio Delta Ti Research Silicon integrated, out-of-plane heat flux thermoelectric generator
WO2016051313A1 (fr) * 2014-10-01 2016-04-07 Consorzio Delta Ti Research Générateur thermoélectrique de type "bivalve" intégré sur silicium à configuration de flux de chaleur hors plan
CN106716658A (zh) * 2014-10-01 2017-05-24 德尔塔蒂研究财团 硅集成的平面外热通量构造的双瓣热电发电机
JP2017537460A (ja) * 2014-10-01 2017-12-14 コンソルツィオ デルタ ティ リサーチ 面外熱流束構成のシリコン集積バイバルブ熱電発電機
US10003002B2 (en) 2014-10-01 2018-06-19 Consorzio Delta Ti Research Silicon integrated bivalve thermoelectric generator of out-of-plane heat flux configuration
CN106716658B (zh) * 2014-10-01 2019-03-08 德尔塔蒂研究财团 硅集成的平面外热通量构造的双瓣热电发电机
WO2016055892A1 (fr) * 2014-10-09 2016-04-14 Consorzio Delta Ti Research Générateur thermoélectrique intégré 3d fonctionnant dans une configuration à flux thermique hors plan comportant des vides internes et des trous d'interconnexion conditionnant des trajets de conduction thermique
US9997691B2 (en) 2014-10-09 2018-06-12 Consorzio Delta Ti Research 3D integrated thermoelectric generator operating in an out-of-plane heat flux configuration with internal voids and heat conduction paths conditioning vias
CN110678993A (zh) * 2017-03-07 2020-01-10 马勒国际有限公司 用于制造热电模块的方法

Also Published As

Publication number Publication date
WO2009100809A3 (fr) 2010-02-04
DE102008009428A1 (de) 2009-08-27

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