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WO2009039844A9 - Microplaquette émettant un rayonnement polarisé - Google Patents

Microplaquette émettant un rayonnement polarisé Download PDF

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Publication number
WO2009039844A9
WO2009039844A9 PCT/DE2008/001583 DE2008001583W WO2009039844A9 WO 2009039844 A9 WO2009039844 A9 WO 2009039844A9 DE 2008001583 W DE2008001583 W DE 2008001583W WO 2009039844 A9 WO2009039844 A9 WO 2009039844A9
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WO
WIPO (PCT)
Prior art keywords
radiation
semiconductor chip
active zone
emitting semiconductor
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/001583
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German (de)
English (en)
Other versions
WO2009039844A2 (fr
WO2009039844A3 (fr
Inventor
Wolfgang Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2009039844A2 publication Critical patent/WO2009039844A2/fr
Publication of WO2009039844A3 publication Critical patent/WO2009039844A3/fr
Publication of WO2009039844A9 publication Critical patent/WO2009039844A9/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Definitions

  • the invention relates to a polarized radiation emitting semiconductor chip.
  • Radiation emitting semiconductor chips or light emitting diodes are advantageous light sources because of their compact size and efficiency.
  • the generated radiation due to spontaneous emission is mostly undirected and unpolarized.
  • applications such as LCD backlighting require polarized radiation.
  • the radiation generated by the LEDs is polarized by a light emitting diode downstream polarization filter. But this is contrary to a compact design.
  • the non-transmitted radiation is lost, that is, it is not used in the system, which suffers the efficiency of the system.
  • An object to be solved here is to provide a radiation-emitting semiconductor chip, which generates polarized radiation in an efficient manner. This object is achieved by a polarized radiation-emitting semiconductor chip according to claim 1 or a polarized radiation-emitting semiconductor chip according to claim 11. Advantageous developments of the polarized radiation-emitting semiconductor chip are given in the dependent patent claims.
  • the polarized radiation-emitting semiconductor chip comprises a radiation-generating active zone and a polarization filter which reflects a first radiation with a first polarization and transmits a second radiation with a second polarization, wherein the radiation-generating active zone between a radiation coupling-out surface of the Semiconductor chips and the polarizing filter is arranged, and wherein a distance di between the active zone and the polarizing filter is set such that a radiation emitted by the active zone in the direction of the radiation coupling-out surface with the reflected first radiation.
  • the first radiation is to be understood as the proportion of the radiation emitted by the active zone which has the first polarization.
  • the second radiation is the proportion of the radiation emitted by the active zone, which has the second polarization.
  • the radiation-generating active zone emits unpolarized radiation.
  • the total radiation emitted by the semiconductor chip in a first variant can essentially have the first polarization.
  • the total radiation has substantially the second polarization.
  • the distance d x between the active zone and the polarization filter is set such that the radiation emitted in the direction of the radiation coupling-out surface constructively interferes with the reflected first radiation.
  • this amplifies the first radiation.
  • the intensity of the first radiation is particularly preferably increased relative to the intensity of the second radiation. This can be achieved, for example, by not amplifying the second radiation.
  • the distance di between the active zone and the polarization filter is an odd multiple of ⁇ / 4, ie in particular ⁇ / 4, 3 ⁇ / 4 or 5 ⁇ / 4, where ⁇ is the wavelength in the semiconductor chip ,
  • the distance di is selected such that the reflected first radiation and the radiation emitted in the direction of the radiation coupling-out surface exits from the active zone
  • the first radiation can experience three phase jumps, namely when it exits the active zone into an adjacent first semiconductor layer, during the reflection at the polarization filter and when entering from the first semiconductor layer into the active zone.
  • Polarizing filter equal to or smaller than the coherence length of the radiation emitted by the active zone. This allows between the reflected first radiation and the original radiation interference, in particular constructive interference occur.
  • the second radiation may remain unmarked when the first radiation is amplified.
  • the second radiation can be selectively suppressed.
  • the radiation-emitting semiconductor chip preferably has a reflection layer which reflects the second radiation, a distance d 2 between the active zone and the reflection layer being set such that the radiation emitted in the direction of the radiation coupling-out surface destructively interferes with the reflected second radiation.
  • the second radiation can be suppressed by means of destructive interference.
  • the distance d 2 is preferably equal to or less than the coherence length of the radiation emitted by the active zone.
  • the polarization filter is arranged between the active zone and the reflection layer.
  • the distance between the active region and the polarizing filter is preferably resonantly set in the above-described embodiment, so that constructive interference occurs
  • the distance between the active region and the reflection layer may be set to be anti-resonant so that destructive interference occurs.
  • the distance d 2 is selected such that the reflected second radiation and the radiation emitted in the direction of the radiation coupling-out surface have a phase difference of (2 * m + 1) * ⁇ at the exit from the active zone.
  • the distance between the polarizing filter and the reflection layer is further adjusted such that the reflected first radiation and the reflected second radiation are out of phase, so that destructive interference occurs.
  • the distance d 2 between the active zone and the reflection layer can be set such that the radiation emitted in the direction of the radiation coupling-out surface constructively interferes with the reflected second radiation.
  • the second polarization predominates in the total radiation.
  • the intensity of the second radiation is increased in relation to the intensity of the first radiation.
  • the distance d 2 between the active zone and the reflection layer may be an odd multiple of ⁇ / 4, in particular ⁇ / 4, 3 ⁇ / 4 or 5 ⁇ / 4, where ⁇ is the wavelength in the semiconductor chip.
  • ⁇ is the wavelength in the semiconductor chip.
  • the distance d x between the active zone and the polarization filter is preferably set such that the light emitted in the direction of the radiation decoupling surface
  • the second radiation can be amplified by constructive interference, while the first radiation is suppressed by means of destructive interference.
  • the distance di is selected such that the reflected first radiation and the radiation emitted in the direction of the radiation coupling-out surface when exiting the active zone have a phase difference of (2 * m + l) * ⁇ , ie they are phase-shifted such that destructive interference occurs ,
  • Reflection layer is preferably chosen so that the first and the second radiation are phase-shifted such that destructive interference occurs.
  • the distance between the polarizing filter and the reflecting layer can be adjusted by an intermediate layer of suitable thickness.
  • the intermediate layer can be applied to the polarization filter, for example. Subsequently, the reflection layer can be arranged on the intermediate layer.
  • the distance d 2 between the active zone and the reflection layer is equal to or smaller than the coherence length of the radiation emitted by the active zone.
  • interference is possible.
  • both the reflected first radiation and the reflected second radiation preferably propagate in the direction of the radiation decoupling surface.
  • the reflection layer is a metal mirror.
  • the reflection layer is a metal mirror.
  • the reflection layer suitable to reflect all the spectral components of the radiation emitted by the active zone.
  • the reflection layer may be a Bragg mirror.
  • the Bragg mirror may be an epitaxially produced multilayer structure or a dielectric multilayer structure with an alternating refractive index n.
  • the thickness of the layers having the multilayer structure is ⁇ / 4.
  • a high degree of reflection can be achieved by means of the Bragg mirror.
  • the polarization filter preferably has a lattice structure.
  • the lattice structure consists of metal strips which run parallel to one another.
  • the metal strips may contain aluminum.
  • the radiation having a polarization parallel to the metal strips is reflected, while the radiation having a polarization perpendicular to the metal strips is transmitted.
  • the first radiation may therefore correspond to the radiation which has a polarization parallel to the metal strips, while the second radiation may correspond to the radiation which has a polarization perpendicular to the metal strips.
  • the metal strips are preferably arranged at a distance from one another which is smaller than the wavelength of the radiation generated in the active layer sequence. The width of the metal strips should be a fraction of this distance.
  • Such small structures can be made, for example, by lithographic techniques or an imprinting process.
  • the polarized radiation-emitting semiconductor chip comprises a radiation-generating active zone and a polarization filter which transmits both a first radiation having a first polarization and a second radiation having a second polarization, wherein the polarization filter is arranged between the active zone and a reflection layer which reflects both the first and the second radiation.
  • the polarization filter By means of the polarization filter, the first radiation undergoes a different phase shift than the second radiation.
  • the polarization filter may in particular have a lattice structure.
  • the grid structure may comprise a plurality of parallel strips of a first material having a first refractive index and a plurality of strips of a second material having a second refractive index arranged therebetween.
  • the first material and the second material may be one of the following materials: silicon nitride, silicon oxide,
  • Titanium oxide TCO.
  • TCO transparent conductive oxides
  • metal oxides such as, for example, oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).
  • the radiation which has a polarization parallel to the strips undergoes a different interaction than the radiation which has a polarization perpendicular to the strips, since the refractive index is alternating or anisotropic.
  • the effective refractive index is different in the case of the radiation having a polarization parallel to the stripes than in the case of the radiation has a polarization perpendicular to the strips. Due to the anisotropic refractive indices, the first radiation experiences a different phase shift than the second radiation.
  • Polarization filter is set such that the radiation emitted in the direction of the radiation coupling-out surface constructively interferes with the reflected first radiation or alternatively, the radiation emitted in the direction of the radiation coupling-out surface constructively interferes with the reflected second radiation.
  • the active zone of the polarized radiation-emitting chip is in a first radiation-generating region and a second
  • the present embodiment can be realized more easily than an embodiment in which, for example, two metal meshes are used, which are oriented orthogonally to one another. Because the orthogonal arrangement requires in the production of a relatively high precision.
  • the polarized radiation-emitting semiconductor chip is a thin-film semiconductor chip.
  • the thin-film semiconductor chip has a layer stack with epitaxially grown layers, from which the growth substrate has detached.
  • the layer stack is alternatively arranged on a carrier element.
  • the layer stack comprises the active zone and a first semiconductor layer which is arranged between the active zone and the polarization filter, and a second semiconductor layer
  • the active zone comprises a radiation-producing pn junction.
  • this pn junction can be formed by means of a p-type and an n-type semiconductor layer, which adjoin one another directly.
  • the actual radiation-generating layer for example in the form of a doped or undoped quantum layer, to be arranged between the p-type and the n-type semiconductor layer.
  • the quantum layer can be formed as single quantum well structure (SQW, single quantum well) or multiple quantum well structure (MQW, multiple quantum well) or else as quantum wire or quantum dot structure.
  • the first and the second semiconductor layer as well as the active zone may each consist of several partial layers.
  • the distance between the active zone and the polarization filter is preferably substantially identical to the layer thickness of the first semiconductor layer.
  • the distance between the polarization filter and the reflection layer is preferably substantially identical to the layer thickness of the intermediate layer.
  • nitride compound is in particular a nitride compound semiconductor material according to the formula Al n Ga m Ini_ nm N, where 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n + m ⁇ 1.
  • This material does not necessarily have a mathematically exact composition according to the above Have formula. Rather, it may have one or more dopants as well as additional ingredients that do not substantially alter the characteristic physical properties of the Al n Ga m In 1 n- ra N material.
  • the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these may be partially replaced by small amounts of other substances.
  • the radiation-emitting semiconductor chip is preferably used for a radiation-emitting component.
  • the semiconductor chip can be arranged in a recess of a housing.
  • such a device emits polarized light.
  • FIGS. 1A and 1B show schematic cross-sectional views of a first exemplary embodiment of a polarized radiation-emitting semiconductor chip according to the invention
  • FIGS. 2A and 2B are schematic cross-sectional views of a second embodiment of a polarized radiation-emitting semiconductor chip according to the invention.
  • FIGS. 3A and 3B show schematic cross-sectional views of a third exemplary embodiment of a polarized radiation-emitting semiconductor chip according to the invention
  • FIGS. 4A and 4B show schematic cross-sectional views of a fourth exemplary embodiment of a polarized radiation-emitting semiconductor chip according to the invention
  • FIGS. 5A and 5B show schematic cross-sectional views of a fifth exemplary embodiment of a polarized radiation-emitting semiconductor chip according to the invention
  • the associated A and B figures show cross sections through the same radiation-emitting semiconductor chip 1, wherein the cross-sectional planes are arranged perpendicular to each other.
  • a cross-section along a strip 5a is shown, which is part of a lattice structure, from which the polarizing filter 5 of the semiconductor chip 1 consists.
  • the B figures show a cross section perpendicular to the strip 5a.
  • the meandering line on the upper side of the semiconductor chip 1 does not represent a physical boundary of the semiconductor chip 1, but is intended to symbolize that the semiconductor chip 1 can have further layers here. In In any case, the semiconductor chip 1 is finally limited by a radiation decoupling surface.
  • the semiconductor chip 1 according to FIGS. 1A and 1B comprises a layer stack 9 and a carrier element 8, on which the layer stack 9 is arranged.
  • the polarizing filter 5 is located between the layer stack 9 and the carrier element 8.
  • a plurality of mutually parallel metal strips 5a, which form the polarization filter 5 are directly on a first
  • the metal strips 5a are preferably made of aluminum. Between the polarizing filter 5 and the carrier element 8, an intermediate layer 6, for example a passivation layer, is arranged.
  • the semiconductor chip 1 is here produced by thin-film technology.
  • the layer stack 9 is thus grown epitaxially on a growth substrate, which is later detached, and connected to the carrier element 8, so that the finished semiconductor chip 1 only has the carrier element 8 and no longer the growth substrate.
  • the polarization filter 5 can thus be brought relatively close to the active zone 3 without a disturbing growth substrate intervening therebetween.
  • the distance di between the active zone 3 belonging to the layer stack 9 and the polarizing filter 5 corresponds to the layer thickness of the first semiconductor layer 4.
  • the distance d i for a first radiation is one first Polarization set resonantly. Because the first radiation Si reflected on the polarizing filter 5 interferes constructively with a radiation S u emitted by the active zone 3 in the direction V of the radiation coupling-out surface. Since by means of the metal strip 5a, which the
  • Polarizing filter 5 the radiation is reflected, which has a polarization parallel to the metal strip 5a, corresponds to the first polarization in this embodiment, the parallel polarization.
  • the distance d x is set in such a way that no phase shift occurs in the active zone 3 between the reflected first radiation Si and the radiation S u emitted in the direction V of the radiation coupling-out surface, ie
  • Phase difference is m * 2 ⁇ , where m is an integer positive number. Suitable distances are an odd multiple of ⁇ / 4, in particular ⁇ / 4, 3 ⁇ / 4 or 5 ⁇ / 4.
  • the distance d x corresponds at most to the coherence length of the radiation emitted by the active zone 3. While the first radiation Si is amplified with the first polarization by means of constructive interference, the second radiation S 2 with the second polarization remains unamplified.
  • Polarization filter 5 through, without being reflected on the polarizing filter 5. Since in this embodiment, in the direction of propagation of the second radiation S 2 no reflective element follows, which would be suitable to reflect the second radiation S 2 in the direction V, the second radiation S 2 remains in the absence of possibility, with the emitted in the direction V of the radiation coupling-out surface Radiation S u to interfere, unreinforced.
  • the ratio of the intensity of the first radiation S 1 to the intensity of the second radiation S 2 is 4: 1, ie the total radiation is polarized, since it has predominantly the first polarization.
  • the embodiment illustrated in FIGS. 2A and 2B has a reflection layer 7 for reflecting the transmitted second radiation S 2 .
  • the reflected second radiation S 2 can thereby propagate in the direction V and interfere with the radiation S 11 emitted in the direction V of the radiation coupling-out surface.
  • a destructive interference is desired here. Because of the destructive interference, the second radiation S 2 in the
  • Total radiation can be selectively suppressed. Further, since the first radiation S 1 is amplified by means of constructive interference, as has already been explained in more detail in connection with FIGS. 1A and 1B, the total radiation here too has the first polarization. In this case, an even better intensity ratio between the first radiation S 1 and the second radiation S 2 can be achieved than in the embodiment of FIGS. 1A and 1B.
  • Reflection layer 7 anti-resonant selected.
  • the distance d 2 here is not greater than the coherence length of the radiation emitted by the active zone 3.
  • the distance d 2 corresponds in the illustrated embodiment of
  • the distance between the Polarization filter 5 and the reflection layer 7, which is to effect a phase shift between the reflected first radiation Si and the reflected second radiation S 2 in this embodiment, can be adjusted accordingly by the layer thickness of the intermediate layer 6.
  • the reflection layer 7 in the present embodiment is a metal mirror, which is preferably suitable for reflecting all spectral components of the radiation emitted by the active zone 3.
  • FIGS. 3A and 3B illustrate an alternative embodiment to the embodiment shown in FIGS. 2A and 2B.
  • the distance d ⁇ between the active zone 3 and the polarizing filter 5 is anti-resonant Distance d 2 between the active zone 3 and the reflection layer 7, however, set resonantly.
  • the first radiation S 1 is suppressed by means of destructive interference.
  • the second radiation S 2 is amplified by means of constructive interference.
  • FIGS. 4A and 4B show a radiation-emitting semiconductor chip 1 according to an alternative variant. While in the embodiments described above, the polarization filter reflects the first radiation and transmits the second radiation, the polarization filter 5 according to the alternative variant transmits both the first radiation Si and the second radiation S 2 . By means of the polarization filter 5 the first radiation Si undergoes a different phase shift than the second radiation S 2 .
  • the polarizing filter 5 has a lattice structure, the lattice structure consisting of a plurality of parallel strips 5a of a first material having a first refractive index and a plurality of strips 5b of a second material having a second refractive index arranged therebetween.
  • the polarizing filter 5 has an anisotropic refractive index.
  • the following materials are suitable for the first and second materials: silicon nitride, silicon oxide, titanium oxide, TCO.
  • the second radiation S 2 is amplified by constructive interference, while the first radiation S 1 is attenuated by destructive interference.
  • the distance d 2 is thus resonant for the second radiation S 2 and anti-resonant for the first radiation Si.
  • the semiconductor chip 1 illustrated in FIGS. 4A and 4B has a reflection layer 7 by means of which both the first radiation S x and the second radiation S 2 m are reflected in the preferred direction V.
  • FIGS. 5A and 5B show a semiconductor chip 1 with an active zone 3 which is subdivided into a first radiation-generating region I and a second radiation-generating region II, wherein in the first region I predominantly the first radiation Si and in the second region II predominantly the second radiation S 2 is emitted.
  • This can be achieved by the distance di between the active zone 3 and the polarizing filter 5 in the two regions I and II is set differently.
  • the distance di is set to be resonant for the first radiation S 1 , while it is set in the second region II in an anti-resonant manner.
  • the distance d 2 for the second radiation S 2 is set in an anti-resonant manner, while it is set to be resonant in the second region II.
  • FIGS. 5A and 5B The exemplary embodiment illustrated in FIGS. 5A and 5B is based on a polarizing filter 5 which consists of a metal grid. However, it is also possible to realize a polarized radiation-emitting semiconductor chip having a first and a second region using an alternating refractive index polarization filter.

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Abstract

La présente invention concerne une microplaquette émettant un rayonnement qui utilise l'effet Purcell pour émettre une lumière polarisée.
PCT/DE2008/001583 2007-09-28 2008-09-26 Microplaquette émettant un rayonnement polarisé Ceased WO2009039844A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007046613.9 2007-09-28
DE102007046613 2007-09-28
DE102007062041.3 2007-12-21
DE102007062041.3A DE102007062041B4 (de) 2007-09-28 2007-12-21 Polarisierte Strahlung emittierender Halbleiterchip

Publications (3)

Publication Number Publication Date
WO2009039844A2 WO2009039844A2 (fr) 2009-04-02
WO2009039844A3 WO2009039844A3 (fr) 2009-07-09
WO2009039844A9 true WO2009039844A9 (fr) 2009-11-19

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PCT/DE2008/001583 Ceased WO2009039844A2 (fr) 2007-09-28 2008-09-26 Microplaquette émettant un rayonnement polarisé

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DE (1) DE102007062041B4 (fr)
TW (1) TW200921954A (fr)
WO (1) WO2009039844A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11620559B2 (en) 2019-02-06 2023-04-04 International Business Machines Corporation Reduction of spontaneous emission and thermal photon noise in quantum computing machines using a galvanically grounded filter

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011017196A1 (de) 2011-04-15 2012-10-18 Osram Opto Semiconductors Gmbh Polarisierte Strahlung emittierender Halbleiterchip
RU2623695C1 (ru) * 2015-12-24 2017-06-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "Владимирский Государственный Университет имени Александра Григорьевича и Николая Григорьевича Столетовых" (ВлГУ) Способ подавления спонтанной эмиссии квантовых излучателей в среде с диссипацией

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JPH0856049A (ja) * 1994-08-15 1996-02-27 Tokyo Inst Of Technol 面発光レーザの偏波制御法
JP3541539B2 (ja) * 1996-02-01 2004-07-14 富士通株式会社 面発光半導体レーザ
GB9916145D0 (en) * 1999-07-10 1999-09-08 Secr Defence Control of polarisation of vertical cavity surface emitting lasers
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device
US7291864B2 (en) 2005-02-28 2007-11-06 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11620559B2 (en) 2019-02-06 2023-04-04 International Business Machines Corporation Reduction of spontaneous emission and thermal photon noise in quantum computing machines using a galvanically grounded filter

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Publication number Publication date
DE102007062041A1 (de) 2009-04-02
WO2009039844A2 (fr) 2009-04-02
DE102007062041B4 (de) 2021-10-21
TW200921954A (en) 2009-05-16
WO2009039844A3 (fr) 2009-07-09

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