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WO2009038111A1 - Display device and method for manufacturing display device - Google Patents

Display device and method for manufacturing display device Download PDF

Info

Publication number
WO2009038111A1
WO2009038111A1 PCT/JP2008/066815 JP2008066815W WO2009038111A1 WO 2009038111 A1 WO2009038111 A1 WO 2009038111A1 JP 2008066815 W JP2008066815 W JP 2008066815W WO 2009038111 A1 WO2009038111 A1 WO 2009038111A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
display device
layer
conversion layer
channel layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066815
Other languages
French (fr)
Japanese (ja)
Inventor
Dharam Pal Gosain
Tsutomu Tanaka
Makoto Takatoku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008216975A external-priority patent/JP5567770B2/en
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN200880009062.1A priority Critical patent/CN101636691B/en
Priority to US12/530,801 priority patent/US8619208B2/en
Publication of WO2009038111A1 publication Critical patent/WO2009038111A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

In the case of forming a switching element and an optical sensor element on the same substrate, when the film thickness of an active layer is increased to improve sensitivity of the optical sensor element, characteristics of the switching element (TFT) are affected. A display device is provided with a channel layer (25) and a photoelectric conversion layer (35) on a gate insulating film (24) of a glass substrate (5) whereupon a plurality of pixels are arranged in matrix. The channel layer configures a thin film transistor to be a pixel switching element. The photoelectric conversion layer configures an optical sensor element. The light absorptance of the photoelectric conversion layer (35) is permitted to be higher than that of the channel layer (25) by forming the photoelectric conversion layer (35) thicker than the channel layer (25) or by forming the photoelectric conversion layer (35) of a material different from that of the channel layer (25).
PCT/JP2008/066815 2007-09-21 2008-09-18 Display device and method for manufacturing display device Ceased WO2009038111A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880009062.1A CN101636691B (en) 2007-09-21 2008-09-18 Display device and method for manufacturing display device
US12/530,801 US8619208B2 (en) 2007-09-21 2008-09-18 Display and method for manufacturing display

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-244880 2007-09-21
JP2007244880 2007-09-21
JP2008216975A JP5567770B2 (en) 2007-09-21 2008-08-26 Display device and manufacturing method of display device
JP2008-216975 2008-08-26

Publications (1)

Publication Number Publication Date
WO2009038111A1 true WO2009038111A1 (en) 2009-03-26

Family

ID=40467921

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066815 Ceased WO2009038111A1 (en) 2007-09-21 2008-09-18 Display device and method for manufacturing display device

Country Status (1)

Country Link
WO (1) WO2009038111A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830077B (en) * 2009-08-07 2024-01-21 日商半導體能源研究所股份有限公司 Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1090655A (en) * 1996-09-17 1998-04-10 Toshiba Corp Display device
JP2005043672A (en) * 2003-07-22 2005-02-17 Toshiba Matsushita Display Technology Co Ltd Array substrate and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1090655A (en) * 1996-09-17 1998-04-10 Toshiba Corp Display device
JP2005043672A (en) * 2003-07-22 2005-02-17 Toshiba Matsushita Display Technology Co Ltd Array substrate and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830077B (en) * 2009-08-07 2024-01-21 日商半導體能源研究所股份有限公司 Semiconductor device
TWI869133B (en) * 2009-08-07 2025-01-01 日商半導體能源研究所股份有限公司 Semiconductor device

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