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WO2009034869A1 - Vacuum processing system and substrate transfer method - Google Patents

Vacuum processing system and substrate transfer method Download PDF

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Publication number
WO2009034869A1
WO2009034869A1 PCT/JP2008/065672 JP2008065672W WO2009034869A1 WO 2009034869 A1 WO2009034869 A1 WO 2009034869A1 JP 2008065672 W JP2008065672 W JP 2008065672W WO 2009034869 A1 WO2009034869 A1 WO 2009034869A1
Authority
WO
WIPO (PCT)
Prior art keywords
transfer chamber
chamber
processing system
processing
vacuum processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065672
Other languages
French (fr)
Japanese (ja)
Inventor
Tetsuya Miyashita
Toshiharu Hirata
Masamichi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN200880023081A priority Critical patent/CN101688296A/en
Publication of WO2009034869A1 publication Critical patent/WO2009034869A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P72/0461—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H10P72/0464—
    • H10P72/0466—
    • H10P72/0476—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A vacuum processing system (1) is provided with a first processing section (2) wherein PVC processing chambers (12-15) are connected to a first transfer chamber (11) to which a wafer (W) is to be transferred; a second processing section (3) wherein CVD processing chambers (22, 23) are connected to a second processing chamber (21) to which the wafer is to be transferred; a buffer chamber (5a), which is arranged between the first transfer chamber (11) and the second transfer chamber (12) through a gate valve (G), stores the wafer (W), and is capable of adjusting pressure therein; and a control section (110) for controlling opening/closing of a gate valve (G) and pressure in the buffer chamber (5a) so that the buffer chamber (5a) is selectively communicated with either the first transfer chamber (11) or the second transfer chamber (12) and that pressure inside matches with pressure inside the communicating transfer chamber.
PCT/JP2008/065672 2007-09-10 2008-09-01 Vacuum processing system and substrate transfer method Ceased WO2009034869A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200880023081A CN101688296A (en) 2007-09-10 2008-09-01 Vacuum processing system and substrate transfer method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007233724A JP2009062604A (en) 2007-09-10 2007-09-10 Vacuum processing system and substrate transfer method
JP2007-233724 2007-09-10

Publications (1)

Publication Number Publication Date
WO2009034869A1 true WO2009034869A1 (en) 2009-03-19

Family

ID=40451878

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065672 Ceased WO2009034869A1 (en) 2007-09-10 2008-09-01 Vacuum processing system and substrate transfer method

Country Status (5)

Country Link
JP (1) JP2009062604A (en)
KR (1) KR20100065127A (en)
CN (1) CN101688296A (en)
TW (1) TW200931577A (en)
WO (1) WO2009034869A1 (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040538A1 (en) * 2009-10-02 2011-04-07 東京エレクトロン株式会社 Substrate processing system
TWI532114B (en) * 2009-11-12 2016-05-01 日立全球先端科技股份有限公司 Vacuum processing device and operation method of vacuum processing device
CN101958231A (en) * 2010-05-06 2011-01-26 东莞宏威数码机械有限公司 Gas environment buffer device
KR20120015987A (en) * 2010-08-12 2012-02-22 삼성전자주식회사 Substrate processing system
JP5785712B2 (en) * 2010-12-28 2015-09-30 株式会社日立ハイテクノロジーズ Vacuum processing equipment
KR101254721B1 (en) * 2011-03-30 2013-04-15 삼성전자주식회사 EFEM Buffer Module
JP5750328B2 (en) * 2011-07-20 2015-07-22 株式会社ニューフレアテクノロジー Vapor phase growth method and vapor phase growth apparatus
JP5923288B2 (en) * 2011-12-01 2016-05-24 株式会社日立ハイテクノロジーズ Vacuum processing apparatus and operating method of vacuum processing apparatus
CN103184427A (en) * 2011-12-28 2013-07-03 绿种子科技(潍坊)有限公司 Thin film deposition apparatus and application method thereof
KR101375646B1 (en) * 2012-06-18 2014-03-18 주식회사 씨엘디 Apparatus for pressing a plate assembly and method thereof
KR101318929B1 (en) * 2012-06-18 2013-10-17 주식회사 씨엘디 Apparatus for pressing a plate assembly
JP6120621B2 (en) * 2013-03-14 2017-04-26 株式会社日立ハイテクノロジーズ Vacuum processing apparatus and operation method thereof
CN104421437B (en) * 2013-08-20 2017-10-17 中微半导体设备(上海)有限公司 Movable valve, portable shielding door and vacuum flush system
KR101649356B1 (en) * 2014-01-20 2016-08-18 주식회사 풍산 Semiconductor Substrate Processing Apparatus
JP2017028209A (en) * 2015-07-27 2017-02-02 東京エレクトロン株式会社 Substrate storage method and substrate processing apparatus
JP6141479B1 (en) * 2016-03-18 2017-06-07 エスペック株式会社 Drying equipment
CN106229287B (en) * 2016-09-30 2019-04-05 厦门市三安光电科技有限公司 Transposition head for transferring micro-components and transfer method of micro-components
CN110835739A (en) * 2018-08-17 2020-02-25 中智(泰兴)电力科技有限公司 7-cavity vertical PECVD-PVD integrated silicon wafer coating process
CN110835735A (en) * 2018-08-17 2020-02-25 中智(泰兴)电力科技有限公司 An 8-cavity horizontal HWCVD-PVD integrated silicon wafer coating process
KR102618825B1 (en) * 2020-01-06 2023-12-27 삼성전자주식회사 Air lock device and control system for prevent gas leaking in bays
JP7386738B2 (en) * 2020-03-19 2023-11-27 東京エレクトロン株式会社 Substrate transport method and substrate processing equipment
JP7420350B2 (en) * 2020-04-24 2024-01-23 島根島津株式会社 Automatic storage module and automatic storage system
JP7344236B2 (en) * 2021-02-08 2023-09-13 キヤノントッキ株式会社 Transport device, film forming device and control method
CN113122812B (en) * 2021-04-20 2023-06-09 郑州航空工业管理学院 A physical vapor deposition material processing equipment
CN116085226A (en) * 2021-05-27 2023-05-09 中科晶源微电子技术（北京）有限公司 Vacuum interlocking air extraction equipment and vacuum interlocking air extraction method
KR102452714B1 (en) * 2021-12-23 2022-10-07 주식회사 에이치피에스피 Chamber apparatus for both high pressure and vacuum process
CN118476010A (en) 2022-02-18 2024-08-09 株式会社日立高新技术 Vacuum processing apparatus
WO2026004914A1 (en) * 2024-06-27 2026-01-02 株式会社カーボンフライ Long sheet processing device, long sheet processing method, carbon nanotube manufacturing device, and carbon nanotube manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319252A (en) * 1989-05-19 1991-01-28 Applied Materials Inc Multistage vacuum separation type treater, multistage vacuum type semiconductor-wafer treater and device and method of transferring workpiece
JPH04254349A (en) * 1991-02-06 1992-09-09 Sony Corp Multichamber process apparatus
JPH07211761A (en) * 1994-01-21 1995-08-11 Tokyo Electron Ltd Transfer of material to be treated in treating device
JP2003060008A (en) * 2001-05-21 2003-02-28 Tokyo Electron Ltd Treatment apparatus, apparatus and method for transfer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319252A (en) * 1989-05-19 1991-01-28 Applied Materials Inc Multistage vacuum separation type treater, multistage vacuum type semiconductor-wafer treater and device and method of transferring workpiece
JPH04254349A (en) * 1991-02-06 1992-09-09 Sony Corp Multichamber process apparatus
JPH07211761A (en) * 1994-01-21 1995-08-11 Tokyo Electron Ltd Transfer of material to be treated in treating device
JP2003060008A (en) * 2001-05-21 2003-02-28 Tokyo Electron Ltd Treatment apparatus, apparatus and method for transfer

Also Published As

Publication number Publication date
KR20100065127A (en) 2010-06-15
TW200931577A (en) 2009-07-16
CN101688296A (en) 2010-03-31
JP2009062604A (en) 2009-03-26

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