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WO2009034658A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
WO2009034658A1
WO2009034658A1 PCT/JP2007/067999 JP2007067999W WO2009034658A1 WO 2009034658 A1 WO2009034658 A1 WO 2009034658A1 JP 2007067999 W JP2007067999 W JP 2007067999W WO 2009034658 A1 WO2009034658 A1 WO 2009034658A1
Authority
WO
WIPO (PCT)
Prior art keywords
type
semiconductor device
layer
anode layer
trr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/067999
Other languages
French (fr)
Japanese (ja)
Inventor
Shinji Kunori
Mizue Kitada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP2008544598A priority Critical patent/JP5113076B2/en
Priority to PCT/JP2007/067999 priority patent/WO2009034658A1/en
Publication of WO2009034658A1 publication Critical patent/WO2009034658A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/058—Forming charge compensation regions, e.g. superjunctions by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

In a conductivity-modulated semiconductor device provided with an n+ type cathode layer (110), an n- type drift layer (112), and a p type anode layer (114), the semiconductor device (100) further includes a plurality of p- type trench regions (120) having such a structure that a plurality of trenches (119) that are formed deeper than the depth of the p type anode layer and with a predetermined width and interval from a first main surface side in the p type anode layer is individually filled with p type silicon inside. Expressing the width of an n- type mesa region (122) sandwiched between the adjacent p- type trench regions (120) of the n- type drift layer (112) as Wm and the diffusion length of a hole in the n- type mesa region (122) as Lp, the following formula (1) is satisfied. Lp>Wm/2 (1) By the semiconductor device (100), the trade-off relationship between a reverse recovery time (trr) and a forward voltage drop (VF) is improved, and shortening the reverse recovery time (trr) can be compatible with reducing the forward voltage drop (VF).
PCT/JP2007/067999 2007-09-14 2007-09-14 Semiconductor device Ceased WO2009034658A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008544598A JP5113076B2 (en) 2007-09-14 2007-09-14 Semiconductor device
PCT/JP2007/067999 WO2009034658A1 (en) 2007-09-14 2007-09-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/067999 WO2009034658A1 (en) 2007-09-14 2007-09-14 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2009034658A1 true WO2009034658A1 (en) 2009-03-19

Family

ID=40451682

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/067999 Ceased WO2009034658A1 (en) 2007-09-14 2007-09-14 Semiconductor device

Country Status (2)

Country Link
JP (1) JP5113076B2 (en)
WO (1) WO2009034658A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839824A (en) * 2012-11-21 2014-06-04 英飞凌科技德累斯顿有限责任公司 Method for manufacturing a semiconductor device
CN104183652A (en) * 2014-09-17 2014-12-03 中航（重庆）微电子有限公司 PIN device with super junction and preparation method of PIN device
CN110444606A (en) * 2018-05-04 2019-11-12 现代自动车株式会社 Semiconductor device and manufacturing method thereof
WO2023136933A1 (en) * 2022-01-11 2023-07-20 Applied Materials, Inc. Power device structures and methods of making

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115566A (en) * 1982-12-22 1984-07-04 Sanken Electric Co Ltd Low loss semiconductor rectifier
JPH09121062A (en) * 1996-08-02 1997-05-06 Hitachi Ltd Semiconductor device
JP2000323488A (en) * 1999-05-10 2000-11-24 Fuji Electric Co Ltd Diode and method of manufacturing the same
JP2003318412A (en) * 2002-02-20 2003-11-07 Fuji Electric Co Ltd Semiconductor device and manufacturing method thereof
JP2006287127A (en) * 2005-04-04 2006-10-19 Fuji Electric Holdings Co Ltd Semiconductor device and manufacturing method thereof
JP2006324432A (en) * 2005-05-18 2006-11-30 Fuji Electric Holdings Co Ltd Semiconductor device and manufacturing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115566A (en) * 1982-12-22 1984-07-04 Sanken Electric Co Ltd Low loss semiconductor rectifier
JPH09121062A (en) * 1996-08-02 1997-05-06 Hitachi Ltd Semiconductor device
JP2000323488A (en) * 1999-05-10 2000-11-24 Fuji Electric Co Ltd Diode and method of manufacturing the same
JP2003318412A (en) * 2002-02-20 2003-11-07 Fuji Electric Co Ltd Semiconductor device and manufacturing method thereof
JP2006287127A (en) * 2005-04-04 2006-10-19 Fuji Electric Holdings Co Ltd Semiconductor device and manufacturing method thereof
JP2006324432A (en) * 2005-05-18 2006-11-30 Fuji Electric Holdings Co Ltd Semiconductor device and manufacturing method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
M. MORI ET AL: "A novel soft and fast recovery diode (SFD) with thin P-layer formed by Al-Si electrode", PROCEEDINGS OF ISPSD `91, 1991, pages 113 - 117, XP010044304 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839824A (en) * 2012-11-21 2014-06-04 英飞凌科技德累斯顿有限责任公司 Method for manufacturing a semiconductor device
US9437440B2 (en) 2012-11-21 2016-09-06 Infineon Technologies Dresden Gmbh Method for manufacturing a semiconductor device
US9837280B2 (en) 2012-11-21 2017-12-05 Infineon Technologies Dresden Gmbh Methods for manufacturing semiconductor devices
CN104183652A (en) * 2014-09-17 2014-12-03 中航（重庆）微电子有限公司 PIN device with super junction and preparation method of PIN device
CN110444606A (en) * 2018-05-04 2019-11-12 现代自动车株式会社 Semiconductor device and manufacturing method thereof
WO2023136933A1 (en) * 2022-01-11 2023-07-20 Applied Materials, Inc. Power device structures and methods of making
US11769665B2 (en) 2022-01-11 2023-09-26 Applied Materials, Inc. Power device structures and methods of making

Also Published As

Publication number Publication date
JPWO2009034658A1 (en) 2010-12-16
JP5113076B2 (en) 2013-01-09

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