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WO2009031681A1 - スイッチング素子及びその製造方法 - Google Patents

スイッチング素子及びその製造方法 Download PDF

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Publication number
WO2009031681A1
WO2009031681A1 PCT/JP2008/066174 JP2008066174W WO2009031681A1 WO 2009031681 A1 WO2009031681 A1 WO 2009031681A1 JP 2008066174 W JP2008066174 W JP 2008066174W WO 2009031681 A1 WO2009031681 A1 WO 2009031681A1
Authority
WO
WIPO (PCT)
Prior art keywords
switching device
cnt
carbon nanotube
source
electrode surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066174
Other languages
English (en)
French (fr)
Inventor
Satoru Toguchi
Hideaki Numata
Hiroyuki Endoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to US12/676,218 priority Critical patent/US8309992B2/en
Priority to JP2009531304A priority patent/JP5273050B2/ja
Publication of WO2009031681A1 publication Critical patent/WO2009031681A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G02B1/041—Lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　低温で製造可能なカーボンナノチューブ（ＣＮＴ）分散膜を活性層に用いたスイッチング素子において、ＣＮＴとソース・ドレイン電極表面との十分な電気的コンタクト及び熱伝導性が得られないという問題があった。本発明のスイッチング素子においてはソース及びドレイン電極上に、カーボンナノチューブと金属材料の混合層、前記金属材料からなる金属層の順で積層された構造を有することによりＣＮＴ分散膜と電極表面とが電気的、機械的、熱的に強固に接触することができる。それにより低温、簡便、安価なプロセスで良好かつ安定したトランジスタ特性を示すスイッチング素子が得られる。
PCT/JP2008/066174 2007-09-07 2008-09-08 スイッチング素子及びその製造方法 Ceased WO2009031681A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/676,218 US8309992B2 (en) 2007-09-07 2008-09-08 Switching element including carbon nanotubes and method for manufacturing the same
JP2009531304A JP5273050B2 (ja) 2007-09-07 2008-09-08 スイッチング素子及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007232598 2007-09-07
JP2007-232598 2007-09-07

Publications (1)

Publication Number Publication Date
WO2009031681A1 true WO2009031681A1 (ja) 2009-03-12

Family

ID=40428992

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066174 Ceased WO2009031681A1 (ja) 2007-09-07 2008-09-08 スイッチング素子及びその製造方法

Country Status (3)

Country Link
US (1) US8309992B2 (ja)
JP (1) JP5273050B2 (ja)
WO (1) WO2009031681A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015096394A1 (zh) * 2013-12-27 2015-07-02 京东方科技集团股份有限公司 薄膜晶体管的制备方法、阵列基板的制备方法及阵列基板
JP2018117119A (ja) * 2017-01-20 2018-07-26 ツィンファ ユニバーシティ ショットキーダイオード、ショットキーダイオードアレイ及びショットキーダイオードの製造方法
KR20200144838A (ko) * 2019-06-19 2020-12-30 광운대학교 산학협력단 저온 용액 공정 기반의 하이브리드 이중층 구조를 갖는 고성능 양극성 트랜지스터의 제조 방법

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US8398901B2 (en) * 2008-12-11 2013-03-19 Fpinnovations Method for producing iridescent solid nanocrystalline cellulose films incorporating patterns
KR20100094192A (ko) * 2009-02-18 2010-08-26 삼성전자주식회사 탄소나노튜브 박막을 이용한 에스램
JP2011060686A (ja) * 2009-09-14 2011-03-24 Konica Minolta Holdings Inc パターン電極の製造方法及びパターン電極
JP5942854B2 (ja) * 2010-12-28 2016-06-29 日本電気株式会社 カーボンナノチューブインク組成物とその塗布方法、カーボンナノチューブ含有薄膜の形成方法
US8471249B2 (en) * 2011-05-10 2013-06-25 International Business Machines Corporation Carbon field effect transistors having charged monolayers to reduce parasitic resistance
JP2015179726A (ja) * 2014-03-19 2015-10-08 ソニー株式会社 膜および膜構造体
WO2017045137A1 (en) * 2015-09-15 2017-03-23 Boe Technology Group Co., Ltd. Thin film transistor, fabrication method thereof, and display apparatus

Citations (3)

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JP2006240898A (ja) * 2005-03-01 2006-09-14 Internatl Business Mach Corp <Ibm> カーボンナノチューブの溶液処理ドーピング方法、半導体装置および半導体装置の形成方法
JP2006351613A (ja) * 2005-06-13 2006-12-28 Matsushita Electric Ind Co Ltd 電界効果トランジスタ、その製造方法および電子機器
JP2007012665A (ja) * 2005-06-28 2007-01-18 Fujitsu Ltd カーボンナノ細線トランジスタの製造方法

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JP4338948B2 (ja) * 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 カーボンナノチューブ半導体素子の作製方法
WO2004051726A1 (ja) * 2002-11-29 2004-06-17 Nec Corporation 半導体装置およびその製造方法
JP4036454B2 (ja) 2003-05-30 2008-01-23 独立行政法人理化学研究所 薄膜トランジスタ。
JP3751016B2 (ja) 2004-07-16 2006-03-01 国立大学法人 東京大学 カーボンナノチューブ分散膜及び発光体
WO2006025353A1 (ja) * 2004-08-31 2006-03-09 Matsushita Electric Industrial Co., Ltd. 電界効果トランジスタおよびその製造方法、ならびにそれを用いた電子機器
US7355199B2 (en) * 2004-11-02 2008-04-08 E.I. Du Pont De Nemours And Company Substituted anthracenes and electronic devices containing the substituted anthracenes
KR100770258B1 (ko) 2005-04-22 2007-10-25 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조 방법
JP2007188923A (ja) * 2006-01-11 2007-07-26 Toray Ind Inc 電界効果型トランジスタおよびそれを用いた画像表示装置
EP2171775A1 (en) * 2007-06-28 2010-04-07 3M Innovative Properties Company Thin film transistors incorporating interfacial conductive clusters
US20090001360A1 (en) * 2007-06-29 2009-01-01 Masaya Nakayama Organic el display and method for producing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006240898A (ja) * 2005-03-01 2006-09-14 Internatl Business Mach Corp <Ibm> カーボンナノチューブの溶液処理ドーピング方法、半導体装置および半導体装置の形成方法
JP2006351613A (ja) * 2005-06-13 2006-12-28 Matsushita Electric Ind Co Ltd 電界効果トランジスタ、その製造方法および電子機器
JP2007012665A (ja) * 2005-06-28 2007-01-18 Fujitsu Ltd カーボンナノ細線トランジスタの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015096394A1 (zh) * 2013-12-27 2015-07-02 京东方科技集团股份有限公司 薄膜晶体管的制备方法、阵列基板的制备方法及阵列基板
US9806108B2 (en) 2013-12-27 2017-10-31 Boe Technology Group Co., Ltd. Manufacturing method of thin film transistor, manufacturing method of array substrate and array substrate
JP2018117119A (ja) * 2017-01-20 2018-07-26 ツィンファ ユニバーシティ ショットキーダイオード、ショットキーダイオードアレイ及びショットキーダイオードの製造方法
KR20200144838A (ko) * 2019-06-19 2020-12-30 광운대학교 산학협력단 저온 용액 공정 기반의 하이브리드 이중층 구조를 갖는 고성능 양극성 트랜지스터의 제조 방법
KR102199223B1 (ko) * 2019-06-19 2021-01-06 광운대학교 산학협력단 저온 용액 공정 기반의 하이브리드 이중층 구조를 갖는 고성능 양극성 트랜지스터의 제조 방법

Also Published As

Publication number Publication date
US8309992B2 (en) 2012-11-13
JP5273050B2 (ja) 2013-08-28
JPWO2009031681A1 (ja) 2010-12-16
US20100163858A1 (en) 2010-07-01

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