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WO2009031358A1 - Piezoelectric resonator - Google Patents

Piezoelectric resonator Download PDF

Info

Publication number
WO2009031358A1
WO2009031358A1 PCT/JP2008/062464 JP2008062464W WO2009031358A1 WO 2009031358 A1 WO2009031358 A1 WO 2009031358A1 JP 2008062464 W JP2008062464 W JP 2008062464W WO 2009031358 A1 WO2009031358 A1 WO 2009031358A1
Authority
WO
WIPO (PCT)
Prior art keywords
acoustic impedance
layers
impedance layers
low
piezoelectric resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062464
Other languages
French (fr)
Japanese (ja)
Inventor
Keiichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40428681&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2009031358(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to DE112008002283.6T priority Critical patent/DE112008002283B4/en
Priority to JP2009531158A priority patent/JP4930595B2/en
Publication of WO2009031358A1 publication Critical patent/WO2009031358A1/en
Priority to US12/714,597 priority patent/US7868519B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

A piezoelectric resonator in which the quality is stabilized and the resonance characteristics are improved. An acoustic reflector section (4) arranged between a vibrating portion (2) where a piezoelectric thin film (16) is sandwiched between a pair of electrodes (15, 17) and a substrate (12) includes (a) a plurality of low acoustic impedance layers (30, 32, 34) composed of a material having a relatively low acoustic impedance and a plurality of high acoustic impedance layers (20, 22) composed of a material having a relatively high acoustic impedance, and (b) adjustment layers (13s, 13t), which are arranged between the high acoustic impedance layers (20, 22) and the low acoustic impedance layers (30, 32) on the side of the substrate (12) and have an acoustic impedance between those of the high acoustic impedance layers (20, 22) and the low acoustic impedance layers (30, 32). The low acoustic impedance layers (30, 32, 34) and the high acoustic impedance layers (20, 22) have a compressive stress and the adjustment layers (13s, 13t) have a tensile stress.
PCT/JP2008/062464 2007-09-06 2008-07-10 Piezoelectric resonator Ceased WO2009031358A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112008002283.6T DE112008002283B4 (en) 2007-09-06 2008-07-10 Piezoelectric resonator
JP2009531158A JP4930595B2 (en) 2007-09-06 2008-07-10 Piezoelectric resonator
US12/714,597 US7868519B2 (en) 2007-09-06 2010-03-01 Piezoelectric resonator including an acoustic reflector portion

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-231854 2007-09-06
JP2007231854 2007-09-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/714,597 Continuation US7868519B2 (en) 2007-09-06 2010-03-01 Piezoelectric resonator including an acoustic reflector portion

Publications (1)

Publication Number Publication Date
WO2009031358A1 true WO2009031358A1 (en) 2009-03-12

Family

ID=40428681

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062464 Ceased WO2009031358A1 (en) 2007-09-06 2008-07-10 Piezoelectric resonator

Country Status (4)

Country Link
US (1) US7868519B2 (en)
JP (1) JP4930595B2 (en)
DE (1) DE112008002283B4 (en)
WO (1) WO2009031358A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2306641A3 (en) * 2009-10-01 2011-08-03 STmicroelectronics SA Method for manufacturing a BAW resonator with high quality factor
CN109314503A (en) * 2016-06-07 2019-02-05 株式会社村田制作所 Elastic wave device and method of making the same

Families Citing this family (152)

* Cited by examiner, † Cited by third party
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FR2951026B1 (en) * 2009-10-01 2011-12-02 St Microelectronics Sa METHOD FOR MANUFACTURING BAW RESONATORS ON A SEMICONDUCTOR WAFER
FR2951023B1 (en) * 2009-10-01 2012-03-09 St Microelectronics Sa METHOD FOR MANUFACTURING MONOLITHIC OSCILLATORS WITH BAW RESONATORS
US9634642B2 (en) 2014-05-30 2017-04-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising vertically extended acoustic cavity
WO2016147688A1 (en) * 2015-03-16 2016-09-22 株式会社村田製作所 Elastic wave device and production method for same
CN108028637B (en) 2015-10-23 2021-05-11 株式会社村田制作所 elastic wave device
US11509279B2 (en) 2020-07-18 2022-11-22 Resonant Inc. Acoustic resonators and filters with reduced temperature coefficient of frequency
US10601392B2 (en) 2018-06-15 2020-03-24 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator
US12237826B2 (en) 2018-06-15 2025-02-25 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US11146232B2 (en) 2018-06-15 2021-10-12 Resonant Inc. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US12088281B2 (en) 2021-02-03 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multi-mark interdigital transducer
US11206009B2 (en) 2019-08-28 2021-12-21 Resonant Inc. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US11929731B2 (en) 2018-02-18 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch
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DE102018107489B4 (en) * 2018-03-28 2019-12-05 RF360 Europe GmbH An improved coupling BAW resonator, RF filter comprising a BAW resonator, and methods of fabricating a BAW resonator
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US12113512B2 (en) 2021-03-29 2024-10-08 Murata Manufacturing Co., Ltd. Layout of XBARs with multiple sub-resonators in parallel
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US20100148638A1 (en) 2010-06-17
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JPWO2009031358A1 (en) 2010-12-09
DE112008002283B4 (en) 2018-01-04

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