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WO2009025017A1 - Dispositif optoélectronique semi-conducteur et élément optique transparent - Google Patents

Dispositif optoélectronique semi-conducteur et élément optique transparent Download PDF

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Publication number
WO2009025017A1
WO2009025017A1 PCT/JP2007/066030 JP2007066030W WO2009025017A1 WO 2009025017 A1 WO2009025017 A1 WO 2009025017A1 JP 2007066030 W JP2007066030 W JP 2007066030W WO 2009025017 A1 WO2009025017 A1 WO 2009025017A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
photodevice
optical member
transparent optical
sealant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/066030
Other languages
English (en)
Japanese (ja)
Inventor
Ken-Ichi Shinotani
Takao Hayashi
Shunpei Fujii
Norihiro Takamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Panasonic Electric Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Electric Works Co Ltd filed Critical Panasonic Electric Works Co Ltd
Priority to JP2009528891A priority Critical patent/JP5211059B2/ja
Priority to PCT/JP2007/066030 priority patent/WO2009025017A1/fr
Publication of WO2009025017A1 publication Critical patent/WO2009025017A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
  • Silicon Polymers (AREA)

Abstract

L'invention concerne un dispositif optoélectronique semi-conducteur ayant un élément émetteur de lumière semi-conducteur ou un élément photorécepteur semi-conducteur scellé par un matériau d'étanchéité qui retarde la détérioration de l'élément, présentant une faible capacité d'absorption d'eau. L'élément émetteur de lumière semi-conducteur ou l'élément photorécepteur semi-conducteur est scellé par un composé de silicium contenant un composé à cage silsesquioxane de la formule (AR1R2SiOSiO1,5)n(BR3R4SiOSiO1,5)p(HOSiO1,5)m-n-p (dans la formule, A est un groupe hydrolysable ; B est un alkyle substitué ou non substitué ou un hydrogène ; chacun de R1, R2, R3 et R4 est indépendamment un méthyle ou un phényle ; m est un nombre sélectionné parmi 6, 8, 10 et 12 ; n est un entier de 2 à m ; et p est un entier de 0 à m-n), ou un hydrolysat partiel de composé à cage silsesquioxane obtenu par hydrolyse partielle du composé précédent.
PCT/JP2007/066030 2007-08-17 2007-08-17 Dispositif optoélectronique semi-conducteur et élément optique transparent Ceased WO2009025017A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009528891A JP5211059B2 (ja) 2007-08-17 2007-08-17 半導体光装置及び透明光学部材
PCT/JP2007/066030 WO2009025017A1 (fr) 2007-08-17 2007-08-17 Dispositif optoélectronique semi-conducteur et élément optique transparent

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/066030 WO2009025017A1 (fr) 2007-08-17 2007-08-17 Dispositif optoélectronique semi-conducteur et élément optique transparent

Publications (1)

Publication Number Publication Date
WO2009025017A1 true WO2009025017A1 (fr) 2009-02-26

Family

ID=40377928

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/066030 Ceased WO2009025017A1 (fr) 2007-08-17 2007-08-17 Dispositif optoélectronique semi-conducteur et élément optique transparent

Country Status (2)

Country Link
JP (1) JP5211059B2 (fr)
WO (1) WO2009025017A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007246880A (ja) * 2006-02-20 2007-09-27 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材
JP2012007042A (ja) * 2010-06-23 2012-01-12 Kaneka Corp 多面体骨格を有するアンモニウムオリゴシリケート、およびポリシロキサン化合物の製造方法
US20130099395A1 (en) * 2011-10-25 2013-04-25 Haruka ONA Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device
JPWO2012090961A1 (ja) * 2010-12-28 2014-06-05 コニカミノルタ株式会社 発光装置、発光装置の製造方法、及び、塗布液
JP2014208615A (ja) * 2013-03-26 2014-11-06 Jnc株式会社 アルコキシシリル基含有シルセスキオキサンおよびその組成物
WO2015115340A1 (fr) * 2014-01-31 2015-08-06 住友化学株式会社 Composition de matériau polysilsesquioxane de scellement pour del uv et utilisation de solvant à cet effet
WO2017079911A1 (fr) * 2015-11-11 2017-05-18 Dow Global Technologies Llc Nanoparticules électroluminescentes et procédé de fabrication de ces nanoparticules
JP2020184641A (ja) * 2016-04-18 2020-11-12 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 光電子部品の製造方法、および光電子部品
JP2023023106A (ja) * 2021-08-04 2023-02-16 株式会社朝日ラバー 紫外線発光素子封止材、及びそれを有する紫外線発光装置

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0267290A (ja) * 1988-06-29 1990-03-07 Akad Wissenschaften Ddr 鳥かご状構造を有する親油性二重環ケイ酸誘導体、その製造方法及びその使用方法
JPH06329687A (ja) * 1993-05-13 1994-11-29 Wacker Chemie Gmbh 有機ケイ素化合物及びその製法
JPH1171462A (ja) * 1997-08-29 1999-03-16 Toshiba Silicone Co Ltd 新規な含ケイ素重合体
JP2000154252A (ja) * 1998-11-18 2000-06-06 Agency Of Ind Science & Technol 新型含シルセスキオキサンポリマー及びその製造方法
JP2000198930A (ja) * 1998-12-28 2000-07-18 Shin Etsu Chem Co Ltd 付加硬化型シリコ―ン組成物
JP2000265066A (ja) * 1999-03-17 2000-09-26 Dow Corning Asia Ltd 有機溶剤可溶性の水素化オクタシルセスキオキサン−ビニル基含有化合物共重合体及び同共重合体からなる絶縁材料
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
JP2004359933A (ja) * 2003-05-14 2004-12-24 Nagase Chemtex Corp 光素子用封止材
JP2005290352A (ja) * 2004-03-12 2005-10-20 Asahi Kasei Corp カゴ状シルセスキオキサン構造を有する化合物
JP2006022207A (ja) * 2004-07-08 2006-01-26 Chisso Corp ケイ素化合物
WO2006077667A1 (fr) * 2005-01-24 2006-07-27 Momentive Performance Materials Japan Llc. Composition de silicone pour encapsuler un element luminescent et dispositif luminescent
JP2006299150A (ja) * 2005-04-22 2006-11-02 Asahi Kasei Corp 封止材用組成物及び光学デバイス
JP2006299149A (ja) * 2005-04-22 2006-11-02 Asahi Kasei Corp 封止材用組成物及び光学デバイス
JP2007031619A (ja) * 2005-07-28 2007-02-08 Nagase Chemtex Corp 光素子封止用樹脂組成物
JP2007221071A (ja) * 2006-02-20 2007-08-30 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0267290A (ja) * 1988-06-29 1990-03-07 Akad Wissenschaften Ddr 鳥かご状構造を有する親油性二重環ケイ酸誘導体、その製造方法及びその使用方法
JPH06329687A (ja) * 1993-05-13 1994-11-29 Wacker Chemie Gmbh 有機ケイ素化合物及びその製法
JPH1171462A (ja) * 1997-08-29 1999-03-16 Toshiba Silicone Co Ltd 新規な含ケイ素重合体
JP2000154252A (ja) * 1998-11-18 2000-06-06 Agency Of Ind Science & Technol 新型含シルセスキオキサンポリマー及びその製造方法
JP2000198930A (ja) * 1998-12-28 2000-07-18 Shin Etsu Chem Co Ltd 付加硬化型シリコ―ン組成物
JP2000265066A (ja) * 1999-03-17 2000-09-26 Dow Corning Asia Ltd 有機溶剤可溶性の水素化オクタシルセスキオキサン−ビニル基含有化合物共重合体及び同共重合体からなる絶縁材料
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
JP2004359933A (ja) * 2003-05-14 2004-12-24 Nagase Chemtex Corp 光素子用封止材
JP2005290352A (ja) * 2004-03-12 2005-10-20 Asahi Kasei Corp カゴ状シルセスキオキサン構造を有する化合物
JP2006022207A (ja) * 2004-07-08 2006-01-26 Chisso Corp ケイ素化合物
WO2006077667A1 (fr) * 2005-01-24 2006-07-27 Momentive Performance Materials Japan Llc. Composition de silicone pour encapsuler un element luminescent et dispositif luminescent
JP2006299150A (ja) * 2005-04-22 2006-11-02 Asahi Kasei Corp 封止材用組成物及び光学デバイス
JP2006299149A (ja) * 2005-04-22 2006-11-02 Asahi Kasei Corp 封止材用組成物及び光学デバイス
JP2007031619A (ja) * 2005-07-28 2007-02-08 Nagase Chemtex Corp 光素子封止用樹脂組成物
JP2007221071A (ja) * 2006-02-20 2007-08-30 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007246880A (ja) * 2006-02-20 2007-09-27 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材
JP2012007042A (ja) * 2010-06-23 2012-01-12 Kaneka Corp 多面体骨格を有するアンモニウムオリゴシリケート、およびポリシロキサン化合物の製造方法
JPWO2012090961A1 (ja) * 2010-12-28 2014-06-05 コニカミノルタ株式会社 発光装置、発光装置の製造方法、及び、塗布液
US20130099395A1 (en) * 2011-10-25 2013-04-25 Haruka ONA Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device
US8810046B2 (en) * 2011-10-25 2014-08-19 Nitto Denko Corporation Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device
JP2014208615A (ja) * 2013-03-26 2014-11-06 Jnc株式会社 アルコキシシリル基含有シルセスキオキサンおよびその組成物
WO2015115340A1 (fr) * 2014-01-31 2015-08-06 住友化学株式会社 Composition de matériau polysilsesquioxane de scellement pour del uv et utilisation de solvant à cet effet
WO2017079911A1 (fr) * 2015-11-11 2017-05-18 Dow Global Technologies Llc Nanoparticules électroluminescentes et procédé de fabrication de ces nanoparticules
JP2020184641A (ja) * 2016-04-18 2020-11-12 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 光電子部品の製造方法、および光電子部品
JP7168615B2 (ja) 2016-04-18 2022-11-09 エイエムエス－オスラム インターナショナル ゲーエムベーハー 光電子部品の製造方法、および光電子部品
JP2023023106A (ja) * 2021-08-04 2023-02-16 株式会社朝日ラバー 紫外線発光素子封止材、及びそれを有する紫外線発光装置
JP7672136B2 (ja) 2021-08-04 2025-05-07 株式会社朝日ラバー 紫外線発光素子封止材、及びそれを有する紫外線発光装置

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Publication number Publication date
JP5211059B2 (ja) 2013-06-12
JPWO2009025017A1 (ja) 2010-11-18

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