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WO2009019793A1 - Method of forming pattern and, for use therein, radiation-sensitive resin composition and resin having radiation-sensitive acid generating group - Google Patents

Method of forming pattern and, for use therein, radiation-sensitive resin composition and resin having radiation-sensitive acid generating group Download PDF

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Publication number
WO2009019793A1
WO2009019793A1 PCT/JP2007/065665 JP2007065665W WO2009019793A1 WO 2009019793 A1 WO2009019793 A1 WO 2009019793A1 JP 2007065665 W JP2007065665 W JP 2007065665W WO 2009019793 A1 WO2009019793 A1 WO 2009019793A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
sensitive
resin
acid generating
generating group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/065665
Other languages
French (fr)
Japanese (ja)
Inventor
Daisuke Shimizu
Nobuji Matsumura
Toshiyuki Kai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to PCT/JP2007/065665 priority Critical patent/WO2009019793A1/en
Publication of WO2009019793A1 publication Critical patent/WO2009019793A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/30—Sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F218/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid or of a haloformic acid
    • C08F218/02—Esters of monocarboxylic acids
    • C08F218/04—Vinyl esters
    • C08F218/08—Vinyl acetate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/52—Amides or imides
    • C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
    • C08F220/58—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide containing oxygen in addition to the carbonamido oxygen, e.g. N-methylolacrylamide, N-(meth)acryloylmorpholine
    • C08F220/585—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide containing oxygen in addition to the carbonamido oxygen, e.g. N-methylolacrylamide, N-(meth)acryloylmorpholine and containing other heteroatoms, e.g. 2-acrylamido-2-methylpropane sulfonic acid [AMPS]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/32—Radiation-absorbing paints
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2312/00—Crosslinking
    • C08L2312/06—Crosslinking by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method of pattern forming that is suitable for use in the formation of fine pattern by electron beams, X-rays or extreme-ultraviolet rays; and, for use therein, a radiation-sensitive resin composition and resin having radiation-sensitive acid generating group. In this method of pattern forming, by irradiation with actinic rays or radial rays, an acid is generated from a resin having radiation-sensitive acid generating group contained as a resin component in a radiation-sensitive resin composition, in which there is contained a radiation-sensitive acid generating group and contained no group generating hydroxyl or carboxyl by acid action, so that the solubility in developer of the resin having radiation-sensitive acid generating group is increased to thereby attain formation of resist pattern. This radiation-sensitive resin composition is one containing only a resin having acid generating group as its resin component.
PCT/JP2007/065665 2007-08-09 2007-08-09 Method of forming pattern and, for use therein, radiation-sensitive resin composition and resin having radiation-sensitive acid generating group Ceased WO2009019793A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065665 WO2009019793A1 (en) 2007-08-09 2007-08-09 Method of forming pattern and, for use therein, radiation-sensitive resin composition and resin having radiation-sensitive acid generating group

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065665 WO2009019793A1 (en) 2007-08-09 2007-08-09 Method of forming pattern and, for use therein, radiation-sensitive resin composition and resin having radiation-sensitive acid generating group

Publications (1)

Publication Number Publication Date
WO2009019793A1 true WO2009019793A1 (en) 2009-02-12

Family

ID=40341041

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065665 Ceased WO2009019793A1 (en) 2007-08-09 2007-08-09 Method of forming pattern and, for use therein, radiation-sensitive resin composition and resin having radiation-sensitive acid generating group

Country Status (1)

Country Link
WO (1) WO2009019793A1 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010110236A1 (en) * 2009-03-27 2010-09-30 Jsr株式会社 Radiation-sensitive resin composition and polymer
WO2010119910A1 (en) * 2009-04-15 2010-10-21 Jsr株式会社 Radiation-sensitive resin composition, polymer used therein, and compound used therein
WO2010150428A1 (en) * 2009-06-24 2010-12-29 パナソニック株式会社 Chemically amplified resist material and method for forming pattern using same
JP2011022348A (en) * 2009-07-15 2011-02-03 Jsr Corp Radiation-sensitive resin composition and polymer used for the same
WO2011030737A1 (en) * 2009-09-11 2011-03-17 Jsr株式会社 Radiation-sensitive composition and novel compound
CN102675159A (en) * 2010-12-31 2012-09-19 罗门哈斯电子材料有限公司 Photoacid generating monomer and precursor thereof
EP2472323A3 (en) * 2010-12-31 2013-01-16 Rohm and Haas Electronic Materials LLC Polymerizable photoacid generators
US8507575B2 (en) 2009-04-15 2013-08-13 Jsr Corporation Radiation-sensitive resin composition, polymer, and compound
US20170038683A1 (en) * 2015-08-05 2017-02-09 Shin-Etsu Chemical Co., Ltd. Compound, polymer compound, resist composition, and patterning process
JP2020083760A (en) * 2018-11-15 2020-06-04 信越化学工業株式会社 Novel salt compound, chemically amplified resist composition, and pattern forming method
EP3779596A4 (en) * 2018-03-30 2021-07-07 FUJIFILM Corporation Negative-type photosensitive composition for euv light, pattern forming method, and manufacturing method of electronic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09325497A (en) * 1996-06-04 1997-12-16 Fuji Photo Film Co Ltd Photosensitive composition
JP2002107929A (en) * 2000-10-03 2002-04-10 Fuji Photo Film Co Ltd Original plate for planographic printing plate
JP2006178317A (en) * 2004-12-24 2006-07-06 Shin Etsu Chem Co Ltd Resist material and pattern forming method using the same
JP2007197718A (en) * 2005-12-27 2007-08-09 Sumitomo Chemical Co Ltd Acid amplification resin for chemically amplified positive resist composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09325497A (en) * 1996-06-04 1997-12-16 Fuji Photo Film Co Ltd Photosensitive composition
JP2002107929A (en) * 2000-10-03 2002-04-10 Fuji Photo Film Co Ltd Original plate for planographic printing plate
JP2006178317A (en) * 2004-12-24 2006-07-06 Shin Etsu Chem Co Ltd Resist material and pattern forming method using the same
JP2007197718A (en) * 2005-12-27 2007-08-09 Sumitomo Chemical Co Ltd Acid amplification resin for chemically amplified positive resist composition

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5578170B2 (en) * 2009-03-27 2014-08-27 Ｊｓｒ株式会社 Radiation-sensitive resin composition and polymer
WO2010110236A1 (en) * 2009-03-27 2010-09-30 Jsr株式会社 Radiation-sensitive resin composition and polymer
US8470513B2 (en) 2009-03-27 2013-06-25 Jsr Corporation Radiation-sensitive resin composition and polymer
WO2010119910A1 (en) * 2009-04-15 2010-10-21 Jsr株式会社 Radiation-sensitive resin composition, polymer used therein, and compound used therein
US8507575B2 (en) 2009-04-15 2013-08-13 Jsr Corporation Radiation-sensitive resin composition, polymer, and compound
WO2010150428A1 (en) * 2009-06-24 2010-12-29 パナソニック株式会社 Chemically amplified resist material and method for forming pattern using same
JP2011022348A (en) * 2009-07-15 2011-02-03 Jsr Corp Radiation-sensitive resin composition and polymer used for the same
WO2011030737A1 (en) * 2009-09-11 2011-03-17 Jsr株式会社 Radiation-sensitive composition and novel compound
US9200098B2 (en) 2009-09-11 2015-12-01 Jsr Corporation Radiation-sensitive composition and compound
JPWO2011030737A1 (en) * 2009-09-11 2013-02-07 Jsr株式会社 Radiation sensitive composition and novel compound
CN102675159A (en) * 2010-12-31 2012-09-19 罗门哈斯电子材料有限公司 Photoacid generating monomer and precursor thereof
US8900792B2 (en) 2010-12-31 2014-12-02 Rohm And Haas Electronic Materials Llc Polymerizable photoacid generators
EP2472323A3 (en) * 2010-12-31 2013-01-16 Rohm and Haas Electronic Materials LLC Polymerizable photoacid generators
CN105693563A (en) * 2010-12-31 2016-06-22 罗门哈斯电子材料有限公司 Photoacid generating monomer and precursor thereof
US20170038683A1 (en) * 2015-08-05 2017-02-09 Shin-Etsu Chemical Co., Ltd. Compound, polymer compound, resist composition, and patterning process
US9897916B2 (en) * 2015-08-05 2018-02-20 Shin-Etsu Chemical Co., Ltd. Compound, polymer compound, resist composition, and patterning process
EP3779596A4 (en) * 2018-03-30 2021-07-07 FUJIFILM Corporation Negative-type photosensitive composition for euv light, pattern forming method, and manufacturing method of electronic device
US11573491B2 (en) 2018-03-30 2023-02-07 Fujifilm Corporation Negative tone photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device
JP2020083760A (en) * 2018-11-15 2020-06-04 信越化学工業株式会社 Novel salt compound, chemically amplified resist composition, and pattern forming method
JP7056524B2 (en) 2018-11-15 2022-04-19 信越化学工業株式会社 New salt compounds, chemically amplified resist compositions, and pattern forming methods
US11435666B2 (en) 2018-11-15 2022-09-06 Shin-Etsu Chemical Co., Ltd. Salt compound, chemically amplified resist composition, and patterning process

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