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WO2009014191A1 - 研磨組成物 - Google Patents

研磨組成物 Download PDF

Info

Publication number
WO2009014191A1
WO2009014191A1 PCT/JP2008/063322 JP2008063322W WO2009014191A1 WO 2009014191 A1 WO2009014191 A1 WO 2009014191A1 JP 2008063322 W JP2008063322 W JP 2008063322W WO 2009014191 A1 WO2009014191 A1 WO 2009014191A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing composition
basic compound
alkylbenzene sulfonate
disclosed
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063322
Other languages
English (en)
French (fr)
Inventor
Yoshiyuki Matsumura
Hiroshi Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitta DuPont Inc
Original Assignee
Nitta Haas Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc filed Critical Nitta Haas Inc
Priority to JP2009524513A priority Critical patent/JPWO2009014191A1/ja
Priority to US12/452,798 priority patent/US20100155655A1/en
Priority to CN200880100365A priority patent/CN101816063A/zh
Publication of WO2009014191A1 publication Critical patent/WO2009014191A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H10P52/403—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本発明の目的は、高速な研磨速度を達成し、かつ、平坦性を向上させることのできる研磨組成物を提供することである。本発明の研磨組成物は、金属膜、特に銅（Ｃｕ）膜に好適な研磨組成物であって、アンモニウム基を含む塩基性化合物、炭素数９～１８のアルキル基を有するアルキルベンゼンスルホン酸塩および過酸化水素を含み、残部が水である。塩基性化合物としては、水酸化アンモニウムを用いることができ、アルキルベンゼンスルホン酸塩としては、ドデシルベンゼンスルホン酸塩などを用いることができる。
PCT/JP2008/063322 2007-07-24 2008-07-24 研磨組成物 Ceased WO2009014191A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009524513A JPWO2009014191A1 (ja) 2007-07-24 2008-07-24 研磨組成物
US12/452,798 US20100155655A1 (en) 2007-07-24 2008-07-24 Polishing composition
CN200880100365A CN101816063A (zh) 2007-07-24 2008-07-24 研磨组合物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-192666 2007-07-24
JP2007192666 2007-07-24

Publications (1)

Publication Number Publication Date
WO2009014191A1 true WO2009014191A1 (ja) 2009-01-29

Family

ID=40281439

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063322 Ceased WO2009014191A1 (ja) 2007-07-24 2008-07-24 研磨組成物

Country Status (6)

Country Link
US (1) US20100155655A1 (ja)
JP (1) JPWO2009014191A1 (ja)
KR (1) KR20100031780A (ja)
CN (1) CN101816063A (ja)
TW (1) TW200916565A (ja)
WO (1) WO2009014191A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017179333A (ja) * 2016-03-28 2017-10-05 株式会社フジミインコーポレーテッド 金属を含む層を有する研磨対象物の研磨に用いられる研磨用組成物
WO2017169743A1 (ja) * 2016-03-28 2017-10-05 株式会社フジミインコーポレーテッド 金属を含む層を有する研磨対象物の研磨に用いられる研磨用組成物

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2010321725B2 (en) * 2009-11-23 2015-11-05 Metcon Technologies, Llc Electrolyte solution and electropolishing methods
JP7057662B2 (ja) * 2017-12-26 2022-04-20 ニッタ・デュポン株式会社 研磨組成物、及び、研磨速度を調整する方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179294A (ja) * 2002-11-26 2004-06-24 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2006202892A (ja) * 2005-01-19 2006-08-03 Jsr Corp 化学機械研磨方法
JP2007088424A (ja) * 2005-08-24 2007-04-05 Jsr Corp 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法
JP2007157841A (ja) * 2005-12-01 2007-06-21 Toshiba Corp Ｃｍｐ用水系分散液、研磨方法、および半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
KR100481651B1 (ko) * 2000-08-21 2005-04-08 가부시끼가이샤 도시바 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US7368388B2 (en) * 2005-04-15 2008-05-06 Small Robert J Cerium oxide abrasives for chemical mechanical polishing
CN1919955A (zh) * 2005-08-24 2007-02-28 捷时雅株式会社 化学机械研磨用水性分散质、配制该分散质的工具、化学机械研磨方法及半导体装置的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179294A (ja) * 2002-11-26 2004-06-24 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2006202892A (ja) * 2005-01-19 2006-08-03 Jsr Corp 化学機械研磨方法
JP2007088424A (ja) * 2005-08-24 2007-04-05 Jsr Corp 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法
JP2007157841A (ja) * 2005-12-01 2007-06-21 Toshiba Corp Ｃｍｐ用水系分散液、研磨方法、および半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017179333A (ja) * 2016-03-28 2017-10-05 株式会社フジミインコーポレーテッド 金属を含む層を有する研磨対象物の研磨に用いられる研磨用組成物
WO2017169743A1 (ja) * 2016-03-28 2017-10-05 株式会社フジミインコーポレーテッド 金属を含む層を有する研磨対象物の研磨に用いられる研磨用組成物

Also Published As

Publication number Publication date
JPWO2009014191A1 (ja) 2010-10-07
US20100155655A1 (en) 2010-06-24
CN101816063A (zh) 2010-08-25
KR20100031780A (ko) 2010-03-24
TW200916565A (en) 2009-04-16

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