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WO2009011119A1 - パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法及びデバイス - Google Patents

パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法及びデバイス Download PDF

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Publication number
WO2009011119A1
WO2009011119A1 PCT/JP2008/001881 JP2008001881W WO2009011119A1 WO 2009011119 A1 WO2009011119 A1 WO 2009011119A1 JP 2008001881 W JP2008001881 W JP 2008001881W WO 2009011119 A1 WO2009011119 A1 WO 2009011119A1
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WO
WIPO (PCT)
Prior art keywords
exposure
wafer
positional relationship
illumination light
information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/001881
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English (en)
French (fr)
Inventor
Soichi Owa
Shigeru Hirukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2009523538A priority Critical patent/JP5630634B2/ja
Publication of WO2009011119A1 publication Critical patent/WO2009011119A1/ja
Priority to US12/648,648 priority patent/US8089616B2/en
Anticipated expiration legal-status Critical
Priority to US13/292,724 priority patent/US9239525B2/en
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

　ウエハ（Ｗ）上の露光対象の複数のショット領域（ＳＡ１～ＳＡ４）に対する露光開始から終了までの間に、パターン生成装置を介した照明光（ＩＬ）のうち、ウエハ（Ｗ）を保持するステージ（ＳＴ）に設けられたスリット対（３４）を介した光を受光し、照明光（ＩＬ）とステージ（ＳＴ）との位置関係（ひいては、照明光（ＩＬ）とウエハ（Ｗ）との位置関係）に関する情報を検出する。これにより、照明光（ＩＬ）とウエハ（Ｗ）との位置関係に関する情報が何らかの原因で変動しても、複数のショット領域に対する露光を行っている途中で、その変動に関する情報を検出することが可能となる。従って、露光動作において、この検出結果を考慮することにより、結果的に、高精度な露光を実現することができる。
PCT/JP2008/001881 2007-07-13 2008-07-14 パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法及びデバイス Ceased WO2009011119A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009523538A JP5630634B2 (ja) 2007-07-13 2008-07-14 露光方法及び装置、並びにデバイス製造方法
US12/648,648 US8089616B2 (en) 2007-07-13 2009-12-29 Pattern forming method and apparatus, exposure method and apparatus, and device manufacturing method and device
US13/292,724 US9239525B2 (en) 2007-07-13 2011-11-09 Pattern forming method and apparatus, exposure method and apparatus, and device manufacturing method and device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-184137 2007-07-13
JP2007184137 2007-07-13
JP2007-194688 2007-07-26
JP2007194688 2007-07-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/648,648 Continuation US8089616B2 (en) 2007-07-13 2009-12-29 Pattern forming method and apparatus, exposure method and apparatus, and device manufacturing method and device

Publications (1)

Publication Number Publication Date
WO2009011119A1 true WO2009011119A1 (ja) 2009-01-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001881 Ceased WO2009011119A1 (ja) 2007-07-13 2008-07-14 パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法及びデバイス

Country Status (4)

Country Link
US (2) US8089616B2 (ja)
JP (2) JP5630634B2 (ja)
TW (1) TWI443472B (ja)
WO (1) WO2009011119A1 (ja)

Cited By (4)

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WO2010100273A3 (en) * 2009-03-06 2010-11-04 Micronic Laser Systems Ab Variable overlap method and device for stitching together lithographic stripes
JP2013138100A (ja) * 2011-12-28 2013-07-11 Dainippon Screen Mfg Co Ltd 描画装置および描画方法
KR20140077627A (ko) * 2012-12-14 2014-06-24 삼성디스플레이 주식회사 노광장치, 그 제어방법 및 노광을 위한 정렬방법
JP2021097222A (ja) * 2019-12-18 2021-06-24 キヤノン株式会社 テンプレートのずれを補償する放射パターンを調整するインプリントリソグラフィシステムおよび方法

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JP6321386B2 (ja) * 2014-01-29 2018-05-09 株式会社オーク製作所 露光装置および露光方法
US20150234295A1 (en) 2014-02-20 2015-08-20 Nikon Corporation Dynamic patterning method that removes phase conflicts and improves pattern fidelity and cdu on a two phase-pixelated digital scanner
KR20160024285A (ko) * 2014-08-25 2016-03-04 삼성디스플레이 주식회사 마스크리스 노광 장치, 마스크리스 노광 방법 및 이에 의해 제조되는 표시 기판
US9277138B1 (en) * 2014-11-14 2016-03-01 The Aerospace Corporation Image detection assembly and method for use in determining transient effects
US9766446B2 (en) * 2015-03-30 2017-09-19 Keysight Technologies, Inc. Microscope illumination system
US10840103B2 (en) 2015-11-23 2020-11-17 Nikon Corporation Forced grid method for correcting mask patterns for a pattern transfer apparatus
JP6700932B2 (ja) * 2016-04-20 2020-05-27 キヤノン株式会社 検出装置、検出方法、プログラム、リソグラフィ装置、および物品製造方法
US11537051B2 (en) 2017-03-16 2022-12-27 Nikon Corporation Control apparatus and control method, exposure apparatus and exposure method, device manufacturing method, data generating method and program
JP2019028331A (ja) * 2017-08-01 2019-02-21 株式会社ブイ・テクノロジー 露光装置
US10814338B2 (en) 2017-08-09 2020-10-27 Delta Separations, Llc Device, system and methods for separation and purification of organic compounds from botanical material
TWI639886B (zh) * 2017-10-23 2018-11-01 Powerchip Technology Corporation 光罩承載平台的維護方法
JP7037341B2 (ja) * 2017-11-29 2022-03-16 株式会社オーク製作所 露光装置および露光方法
US10591815B2 (en) * 2018-06-28 2020-03-17 Applied Materials, Inc. Shifting of patterns to reduce line waviness
KR20250141846A (ko) 2020-01-10 2025-09-29 가부시키가이샤 니콘 광학 장치, 노광 장치, 플랫 패널 디스플레이의 제조 방법, 및 디바이스 제조 방법
TWI881068B (zh) * 2020-03-11 2025-04-21 日商奈米系統解決股份有限公司 曝光裝置
JP7625950B2 (ja) 2021-04-12 2025-02-04 株式会社ニコン 露光装置、露光方法、デバイス製造方法、及びデバイス
EP4481498A1 (en) 2022-02-17 2024-12-25 Nikon Corporation Exposure method, device manufacturing method, exposure device, and exposure system
CN118816718B (zh) * 2024-09-19 2025-02-14 浙江乔士智能工业股份有限公司 一种传感器针脚检测方法、设备、智能终端及存储介质

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WO2010100273A3 (en) * 2009-03-06 2010-11-04 Micronic Laser Systems Ab Variable overlap method and device for stitching together lithographic stripes
US8312393B2 (en) 2009-03-06 2012-11-13 Micronic Laser Systems Ab Variable overlap method and device for stitching together lithographic stripes
JP2013138100A (ja) * 2011-12-28 2013-07-11 Dainippon Screen Mfg Co Ltd 描画装置および描画方法
KR20140077627A (ko) * 2012-12-14 2014-06-24 삼성디스플레이 주식회사 노광장치, 그 제어방법 및 노광을 위한 정렬방법
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JP7545302B2 (ja) 2019-12-18 2024-09-04 キヤノン株式会社 テンプレートのずれを補償する放射パターンを調整するインプリントリソグラフィシステムおよび方法

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JP5741868B2 (ja) 2015-07-01
JP2013191901A (ja) 2013-09-26
JPWO2009011119A1 (ja) 2010-09-16
TW200919106A (en) 2009-05-01
US20120057141A1 (en) 2012-03-08
US20100099049A1 (en) 2010-04-22
US8089616B2 (en) 2012-01-03
JP5630634B2 (ja) 2014-11-26
US9239525B2 (en) 2016-01-19
TWI443472B (zh) 2014-07-01

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