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WO2009008672A3 - Solar cell and method of manufacturing the same - Google Patents

Solar cell and method of manufacturing the same Download PDF

Info

Publication number
WO2009008672A3
WO2009008672A3 PCT/KR2008/004059 KR2008004059W WO2009008672A3 WO 2009008672 A3 WO2009008672 A3 WO 2009008672A3 KR 2008004059 W KR2008004059 W KR 2008004059W WO 2009008672 A3 WO2009008672 A3 WO 2009008672A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
solar cell
type semiconductor
conductive type
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2008/004059
Other languages
French (fr)
Other versions
WO2009008672A2 (en
Inventor
Jae Ho Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jusung Engineering Co Ltd
Original Assignee
Jusung Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jusung Engineering Co Ltd filed Critical Jusung Engineering Co Ltd
Publication of WO2009008672A2 publication Critical patent/WO2009008672A2/en
Publication of WO2009008672A3 publication Critical patent/WO2009008672A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate that has a light-condensing pattern formed at a surface thereof. A first conductive type semiconductor layer, A light-absorbing layer, and a second conductive type semiconductor layer are disposed over the light-condensing pattern. A first electrode and a second electrode are connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively. The light-condensing pattern is formed at the surface of the substrate, or a light-condensing sheet is attached on the surface of the substrate. Thus, incident solar light is condensed to increase the intensity of light incident on a light-converting layer. Therefore, the efficiency of the solar cell can be increased and an effective area of a photoelectric element of the solar cell can be increased.
PCT/KR2008/004059 2007-07-10 2008-07-10 Solar cell and method of manufacturing the same Ceased WO2009008672A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070069016A KR101358864B1 (en) 2007-07-10 2007-07-10 Solar cell and method for manufacturing the same
KR10-2007-0069016 2007-07-10

Publications (2)

Publication Number Publication Date
WO2009008672A2 WO2009008672A2 (en) 2009-01-15
WO2009008672A3 true WO2009008672A3 (en) 2009-03-05

Family

ID=40229278

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/004059 Ceased WO2009008672A2 (en) 2007-07-10 2008-07-10 Solar cell and method of manufacturing the same

Country Status (3)

Country Link
KR (1) KR101358864B1 (en)
TW (1) TW200913297A (en)
WO (1) WO2009008672A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI403681B (en) * 2009-09-07 2013-08-01 Univ Nat Cheng Kung Solar concentrator
KR101124490B1 (en) * 2009-12-15 2012-03-16 (유)에스엔티 Solar cell and manufacturing method of the same
KR101410392B1 (en) * 2009-12-30 2014-06-20 주성엔지니어링(주) Hetero juction type Solar Cell and method of manufacturing the same
KR101103894B1 (en) * 2010-02-08 2012-01-12 엘지이노텍 주식회사 Solar cell and manufacturing method thereof
TWI452709B (en) * 2011-06-07 2014-09-11 Nexpower Technology Corp Encapsulation film structure
JP6200712B2 (en) * 2012-07-19 2017-09-20 株式会社カネカ Solar cell module and manufacturing method thereof
TWI732444B (en) * 2020-02-05 2021-07-01 凌巨科技股份有限公司 Solar cell gentle slope structure and manufacturing method thereof
KR102792265B1 (en) * 2021-04-12 2025-04-09 주성엔지니어링(주) Solar Cell and Method of manufacturing the same
CN113659019B (en) * 2021-07-13 2022-10-11 中山德华芯片技术有限公司 Flexible solar cell and preparation method and application thereof
KR102682432B1 (en) * 2021-11-19 2024-07-10 조행우 Light collect cell for Solar battery

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199745A (en) * 1995-11-13 1997-07-31 Sharp Corp Solar cell substrate and manufacturing method thereof, substrate processing apparatus, thin film solar cell and manufacturing method thereof
JPH11135817A (en) * 1997-10-27 1999-05-21 Sharp Corp Photoelectric conversion element and method for manufacturing the same
US6187150B1 (en) * 1999-02-26 2001-02-13 Kaneka Corporation Method for manufacturing thin film photovoltaic device
KR100348108B1 (en) * 1997-10-29 2002-09-18 캐논 가부시끼가이샤 A photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovoltaic element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199745A (en) * 1995-11-13 1997-07-31 Sharp Corp Solar cell substrate and manufacturing method thereof, substrate processing apparatus, thin film solar cell and manufacturing method thereof
JPH11135817A (en) * 1997-10-27 1999-05-21 Sharp Corp Photoelectric conversion element and method for manufacturing the same
KR100348108B1 (en) * 1997-10-29 2002-09-18 캐논 가부시끼가이샤 A photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovoltaic element
US6187150B1 (en) * 1999-02-26 2001-02-13 Kaneka Corporation Method for manufacturing thin film photovoltaic device

Also Published As

Publication number Publication date
KR101358864B1 (en) 2014-02-06
TW200913297A (en) 2009-03-16
KR20090005734A (en) 2009-01-14
WO2009008672A2 (en) 2009-01-15

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