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WO2009090606A1 - Support d'enregistrement magnétique perpendiculaire et son procédé de fabrication - Google Patents

Support d'enregistrement magnétique perpendiculaire et son procédé de fabrication Download PDF

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Publication number
WO2009090606A1
WO2009090606A1 PCT/IB2009/050133 IB2009050133W WO2009090606A1 WO 2009090606 A1 WO2009090606 A1 WO 2009090606A1 IB 2009050133 W IB2009050133 W IB 2009050133W WO 2009090606 A1 WO2009090606 A1 WO 2009090606A1
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WO
WIPO (PCT)
Prior art keywords
layer
magnetic
dusting
soft magnetic
dusting layer
Prior art date
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Ceased
Application number
PCT/IB2009/050133
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English (en)
Inventor
Hartmut Rohrmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
OC Oerlikon Balzers AG
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Filing date
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Publication of WO2009090606A1 publication Critical patent/WO2009090606A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Definitions

  • the present invention relates to a perpendicular magnetic recording medium, in particular perpendicular magnetic recording medium with a layer stack including a dual soft magnetic un-derlayer with antiparallel coupling, and a method for manufacturing the perpendicular magnetic recording medium.
  • a perpendicular magnetic recording medium includes a magnetic recording layer having an easy axis of magnetization oriented substantially perpendicular to the substrate. This has the ad-vantage that the storage density can be increased compared to a longitudinal magnetic recording medium in which the easy axis of magnetization is orientated substantially parallel to the substrate.
  • Hexagonal Close Packed (HCP) Co- alloys are typically used as the magnetic recording layer for perpendicular recording.
  • Figure 1 illustrates a configuration of a perpendicular magnetic recording medium
  • PMR medium for a hard disk.
  • a substrate 1 is provided on which a soft magnetic un- derlayer (SUL) 2 is arranged.
  • a perpendicular magnetic recording layer 3 is disposed on the soft magnetic underlayer 2, a protection layer 4 is placed on the perpendicular magnetic recording layer 3 and a lubricating layer 5 is formed on the protection layer 4 to induce smooth sliding of the data writing/reading head slider.
  • the soft magnetic underlayer for example FeCoB or CoZrTa etc. is introduced in the magnetic layer stack to increase the writing field in the magnetic storage layer of the hard disk.
  • the materials used as the soft magnetic underlayer are typically amorphous or nano- crystalline with very small grain size in order to avoid writing noise.
  • the soft magnetic underlayer splits into magnetic domains with different magnetisation directions over the surface of the hard disk.
  • the domain walls between the differently magnetised areas can disturb the magnetically stored information.
  • One way to avoid these domain walls is to divide the soft magnetic underlayer into two antiparallel coupled (AF-coupled) magnetic layers with a very thin non-magnetic coupling layer, typically Ruthenium, sandwiched inbewteen.
  • AF-coupled antiparallel coupled
  • the non-magnetic coupling layer typically has a thickness of less than lnm.
  • Fig. 2 illustrates an arrangement with two anti-parallel cou-pled soft magnetic layers shown in more detail (compared to Fig. 1) with protection 4 and lubricating layer 5 omitted.
  • One or several seed layers 6 are arranged On a substrate 1.
  • First 2A and second 2B soft magnetic sub layers are separated from one another by a coupling layer 8.
  • the transition to the perpendicular magnetic recording layer 3 which provides the storage layer is facilitated by one or more seed layers 7.
  • the present invention provides a perpendicular magnetic recording medium comprising a first soft magnetic underlayer, a non-magnetic antiferromagnetic coupling layer arranged on the first soft magnetic underlayer, a first dusting layer arranged on the non-magnetic antiferromagnetic coupling layer and/or a second dusting layer arranged between the first soft magnetic underlayer and the non-magnetic antiferromagnetic coupling layer, a second soft magnetic underlayer arranged on the first dusting layer, and at least one perpendicular magnetic recording layer arranged on the second soft magnetic underlayer.
  • the invention therefore, provides three embodiments of a perpendicular recording medium including one or two dusting layers.
  • a single dusting layer is provided which is arranged between the first soft magnetic underlayer and the non-magnetic antiferromagnetic coupling layer.
  • a single dusting layer is provided which is arranged between the non-magnetic antiferromagnetic coupling layer and the second soft magnetic underlayer.
  • a first dusting layer is arranged between the first soft magnetic underlayer and the non-magnetic antiferromagnetic coupling layer and a second dusting layer is arranged between the nonmagnetic antiferromagnetic coupling layer and the second soft magnetic underlayer.
  • dusting layer is used to describe an intermediate layer which is typically very thin.
  • the one or two dusting layers improve the coupling strength between the first and second soft magnetic layers whilst maintaining the anti-parallel coupling between the first and second soft magnetic layers.
  • the first dusting layer and/or the second dusting layer is magnetic. This enables a strong coupling between the first and second soft magnetic layers.
  • the first dusting layer and/or the second dusting layer may comprise co-balt, a Co-based alloy or a FeCo-alloy.
  • the first dusting layer and/or the second dusting layer may be crystalline and the first and second soft magnetic layers, non-magnetic coupling layer and the perpendicular recording layer may be amorphous or nanocrystalline.
  • the first dusting layer and/or the second dusting layer is thin and in an embodiment comprises a thickness of 0.4 nm to 1.4 nm.
  • the thickness of the first dusting layer and, if provided, the second dusting layer may be adjusted so as to provide the desired coupling.
  • the thickness is increased to increase the coupling.
  • the perpendicular magnetic recording medium comprises a saturation field in the hard axis of greater than 90 Oe or greater than 150 Oe.
  • the non-magnetic antiferromagnetic coupling layer may comprise Ru and at least one of the first and second soft magnetic underlayers may comprise a FeCoB or a CoZrTa alloy.
  • the perpendicular magnetic recording medium further comprises at least one seed layer.
  • the seed layer may be arranged between one of a substrate and the first underlayer and the second underlayer and the perpendicular recording medium.
  • the present invention also provides a method of fabricating a perpendicular magnetic recording medium which comprises depositing a first soft magnetic underlayer, depositing a non-magnetic antiferromagnetic coupling layer onto the first soft magnetic underlayer, depositing a first dusting layer onto the non-magnetic antiferromagnetic coupling layer and depositing a second soft magnetic underlayer onto the first dusting layer.
  • the first dusting layer is arranged on the opposing side of the non-magnetic antiferromagnetic coupling layer.
  • the first soft magnetic underlayer is deposited, the first dusting layer is deposited onto the first soft magnetic underlayer and the non-magnetic antiferromagnetic coupling layer is deposited onto the first dusting layer.
  • the second soft magnetic underlayer is deposited onto the non-magnetic antiferromagnetic coupling layer.
  • both the first and second dusting layers are deposited.
  • the first soft magnetic underlayer is deposited.
  • the first dusting layer is deposited onto the first soft magnetic underlayer
  • the non-magnetic antiferromagnetic coupling layer is deposited onto the first dusting layer
  • the second dusting layer is depos-ited onto the non-magnetic antiferromagnetic coupling layer.
  • the second soft magnetic underlayer is deposited onto the second dusting layer. In this em- bodiment, the non-magnetic antiferromagnetic coupling layer is sandwiched between the first and second dusting layer respectively.
  • All of the layers may be deposited by sputtering. DC or RF sputtering may be used.
  • the one or two dusting layers and the non-magnetic coupling layer may be sputtered in a single station which includes a multi-target arrangement.
  • the targets may be concentrically arranged.
  • the soft magnetic layers may be deposited in one or two additional stations.
  • the thickness of the first dusting layer and/or second dusting layer is adjusted to produce a saturation field in the hard axis of greater than 90 Oe.
  • the thick-ness of the first and/or second dusting layers may be adjusted within the range of 0.4 nm to 1.4 nm.
  • the first dusting layer and/or the second dusting layer comprise magnetic material and are sputter deposited from a first target comprising at least one upper part and at least one lower part spaced from one another and arranged in generally parallel planes, the upper part protruding partially over said lower part.
  • a target arrangement enables a magnetic field to be generated above the surface of the target which is sufficient to remove material from the target at a rate and uniformity suitable for the manufacture of recording media such as hard disks.
  • a first magnetic field is generated above the first target to sputter material from said first target to form said first dusting layer and/or said second dusting layer and a second magnetic field is generated above a second target to sputter material from said second target to deposit said non-magnetic antiferromagnetic coupling layer.
  • the first magnetic field is generated and controlled independently of said second magnetic field to enable two different materials to be sputtered independently within a single deposition station.
  • FIG. 1 illustrates a perpendicular magnetic recording medium according to the prior art
  • FIG. 2 illustrates a perpendicular magnetic recording medium with two anti-parallel coupled soft magnetic underlayers according to the prior art
  • FIG. 3 illustrates a perpendicular magnetic recording medium with a single dusting layer according to a first embodiment
  • FIG. 4 illustrates a perpendicular magnetic recording medium with two dusting layers according to a second embodiment
  • FIG. 5 illustrates a first arrangement for sputtering including a three-ring coating source known in the art
  • FIG. 6 illustrates a second arrangement for sputtering including a three-ring coating source known in the art
  • FIG. 7 illustrates experimental results for a perpendicular magnetic recording medium according to a third embodiment
  • Fig. 8 illustrates the layer stack of the perpendicular magnetic recording medium of the third embodiment.
  • FIGS 1 and 2 illustrate arrangements of perpendicular magnetic media of the prior art and have been described above.
  • Figure 3 illustrates a portion of a perpendicular magnetic recording medium 10 according to a first embodiment of the present application.
  • the perpendicular magnetic medium 10 further includes a protection layer and a lubricating layer arranged on top of the storage layer which are not illustrated in Figure 3.
  • the perpendicular recording medium 10 includes a multi-layer stack built up on a substrate 1.
  • the substrate 1 is non-magnetic and may comprise glass or a ceramic or silicon or aluminium or an aluminium alloy.
  • the multi-layer stack includes a first soft magnetic underlayer 2A disposed on the substrate 1, a non-magnetic antiferromagnetic coupling layer 8 arranged directly on the first soft magnetic underlayer 2A, a first dusting layer 21 arranged directly on the nonmagnetic antiferromagnetic coupling layer 8 and a second soft magnetic underlayer 2B arranged directly on the first dusting layer 21 and at at least one perpendicular magnetic recording layer arranged on the second soft magnetic underlayer 2B.
  • the coupling strength of the first soft magnetic layer 2A and the second soft magnetic layer 2B can be increased by optimizing the material choice of the interface between one or more of the first soft magnetic layer 2A and second soft magnetic layer 2B and the non-magnetic coupling layer 8. Therefore, according to the present invention, a very thin intermediate layer 21 commonly referred to as a dusting layer is introduced between one or more of the first and second soft magnetic layers 2A 2B and the non-magnetic coupling layer 8 to increase the coupling strength.
  • a single dusting layer 21 is arranged between coupling layer 8 and SUL (sub) layer 2B, which is called a "single- sided" arrangement of the dusting layer.
  • the dusting layer 21 is arranged between coupling layer 8 and the first soft magnetic (sub) layer 2A.
  • a first soft magnetic underlayer 2A disposed on the substrate 1 includes arrangements in which the first soft magnetic layer 2A is arranged directly on the substrate 1 as well as arrangements in which the multi-layer stack further includes a seed layer 6 arranged between the first soft magnetic layer 2A and the substrate 1 as is illustrated in Figure 3.
  • the seed layer 6 is provided to improve the adhesion of the first soft magnetic layer on the substrate 1 and/or influence the orientation and/or crys- tallinity of the first soft magnetic layer.
  • the first soft magnetic layer 2 A and the second soft magnetic layer 2B may comprise a FeCoB or a CoZrTa alloy.
  • the non-magnetic coupling layer 8 may comprise Ru.
  • the seed layer 6, if provided, may comprise Ta.
  • the perpendicular magnetic recording layer or storage layer 3 comprises one or more materials that have an easy axis of magnetization orientated substantially perpendicular to the major surface of the substrate 1.
  • the perpendicular magnetic recording layer 3 may comprise a Co-alloy.
  • the dusting layer 21 may be magnetic and may also be crystalline.
  • crystalline is used to describe a lattice which has an average grain size of greater than lOOnm as determined by power X-ray diffraction or Transmission Electron Microscopy. Lattice structures with an average grain size of less than lOOnm are denoted herein as nanocrystalline.
  • the dusting layer 21 is cobalt in this embodiment.
  • the dusting layer may also comprise a cobalt-based alloy or a FeCo-based alloy.
  • the thickness of the dusting layer may lie in the range of 0.2 nm to 2 nm, or 0.4 nm to 1.4 nm or 0.4 nm to 1 nm.
  • Figure 5 illustrates a perpendicular magnetic storage medium 11 according to a second embodiment.
  • the arrangement of the multi-layer stack of the second embodiment differs from that of the first embodiment in that it includes two dusting layers 21 22 arranged on either side of the non-magnetic coupling layer 8.
  • the second embodiment has a double-sided arrangement in which a first dusting layer 21 is arranged and extends be-tween coupling layer 8 and the second soft magnetic SUL layer 2B and a further, second dusting layer 22, arranged and extending between the coupling layer 8 and the first soft magnetic layer 2A.
  • the material of the dusting layers 21, 22 is chosen in such a way that a very good coupling over the non-magnetic coupling layer is achieved. Furthermore, the material of the dusting layers 21, 22 has to couple well to the soft magnetic layers 2 A and 2B.
  • the thickness of the magnetic layers basically remains the same as in the conventional AF-coupled SUL arrangement. The thickness of the dusting layer is very small allowing a wider choice of materials which are not amorphous or nano-crystalline as the magnetic layers. It is possible to use the dusting layer at one or both interfaces between the magnetic layers and the non-magnetically coupling layer.
  • the material used for the dusting layer 21 or layers 21, 22 typically is a high Bs material as FeCo, Co, Co-alloys.
  • the AF-coupled SUL layer with additional dusting layer or layers is comprised of 4 or 5 layers; layer sequence 2A, 8, 21, 2B of the first embodiment illustrated in Fig. 3 or 2A, 22, 8, 21, 2B of the second embodiment illustrated in Fig. 4 respectively, which would require 4 or 5 sputter stations in a conventional single target sputtering configuration. This is undesirable compared to the 3 sputter stations required for an AF- coupled SUL layer without dusting layer or layers having the layer sequence 2A, 8, 2B illustrated in Fig. 2.
  • non-magnetic coupling layer 8 and the dust- ing layer 21 or dusting layers are all very thin, e.g. less than 2 nm it is possible to use a multi-target sputter source to produce all these layers in one station.
  • Multi-target sputter sources may be used to deposit multi-layer structures as well as special alloys such as those used in hard disk media.
  • Figure 5 illustrates a cross-section of apparatus for sputtering having a multi-target sputter source which is sold under the trade name Triatron by the company Oerlikon.
  • the apparatus 100 includes three concentric targets 101, 102, 103 with individual magnetron and power supplies for each target.
  • the target rings 101, 102 and 103 are concentric around a middle axis.
  • the position of a substrate to be coated is indicated with the reference number 104 relative to a shield 105 and the targets 101, 102 and 103.
  • 101a/101b are construed to comprise materials with high magnetization.
  • These two target arrangements are divided into an upper (103a and 101a) and a lower part (103b and 101b) in a step-like arrangement. Upper and lower parts do not touch, the vertical distance between them is chosen as a compromise between the needs of guiding the magnetic field and avoiding parasitic plasma igniting in the gap. This distance will normally be between 0.5 and 6mm, pref-erably between 1- 1.5mm, depending on the electric and magnetic properties.
  • the middle target arrangement 102 is ringshaped and comprises non-magnetic or low-magnetization material.
  • the arrangement of permanent magnets consists of four concentric rings 106, 107,
  • the magnetron field for the inner target 103 a/ 103b is produced by the permanent magnet rings 106 and 107.
  • the magnetron field for the middle target 102 is produced by the permanent magnet rings 107 and 108.
  • the magnetron field for the outer target 101a/101b is produced by the permanent magnet rings 108 and 109.
  • the strength of said magnets is chosen according to the specific requirements of the sputtering process and takes into account the material to be sputtered.
  • This arrangement utilizes the roof target effect for the two pairs of targets 103a/103b and 101a/101b, respectively. Due to this effect high magnetization materials can be used for the targets 103a/103b and 101a/101b and the eroded area on these targets has a large width. Due to the fact that the sputter voltage can be applied independently to the target arrangements 103a/103b and 101a/101b, respectively, the sputter power on these two areas can easily be controlled independently and the areas can be sputtered independently.
  • the target 102 may also be used as an independent sputter source and by applying a power to this sputter target 102 the advantages of the this design can be utilized for high magnetization materials in combination with non magnetic / low magnetization materials.
  • the targets 103a/103b and 101a/101b are made of the same high magnetization material, for example, cobalt and are sputtered simultaneously to form the dusting layer 21 while the target 102 is not sputtered.
  • the non-magnetic coupling layer 8 is then formed by sputtering target 102 of Ruthenium while the targets 103a/103b and 101a/101b are not sputtered.
  • a multilayer structure of thin films can be formed by repeating this sputter sequence.
  • the sputter powers on target 103a/103b and target 101a/101b are typically tuned to reach an optimal uniformity of the sputtered high magnetization material on the substrate.
  • the sputter power on target 102 is reduced to a very small level (typically in the range 5-20W) while sputtering the targets 103a/103b and 101a/101b with higher power and, in the opposite logic, sputtering the targets 103a/103b and lOla/lOlb with a very small power (5-20W each) while sputtering the target 102 with higher power.
  • a very small level typically in the range 5-20W
  • This mode is used to prevent deposition of the high magnetisation material from target 103a/103b and 101a/101b on target 102, and, in the same way, deposition of the non magnetic / low magnetization material from target 102 on target 103 a/ 103b and 101a/101b during sputtering the other material, respectively.
  • this sputter mode the cross contamination of the different materials is reduced.
  • Another advantage of this sputter configuration is that the time between the deposition of the dusting layer 21 or layers and the non-magnetic coupling layer 8 is minimized, enabling a layer structure with extremely clean interfaces to be pro-duced.
  • the experimental results as displayed in Fig. 7 show the increased coupling of the amorphous FeCoB films providing the first and second soft magnetic layers 2A 2B by interface dusting providing by a first dusting layer 21 of cobalt arranged between the non-magnetic coupling layer 8 and the second soft magnetic layer 2B.
  • the soft magnetic layers 2A, 2B are deposited on the disks with a radially oriented magnetic anisotropy.
  • the field necessary to saturate the anti-parallel coupled films in tangential direction is a measure for the coupling strength.
  • Single sided Cobalt-dusting on the Ruthenium - FeCoB interface was chosen for better understanding of the effects.
  • FIG. 8 The layer stack for a perpendicular magnetic recording medium 30 according to a third embodiment used to demonstrate said ability of Figure 7 is illustrated in Figure 8.
  • Amorphous soft magnetic underlayers 32A, 32B of FeCo31B12 (at%) films are anti- parallel coupled by a 0.82nm Ruthenium layer (coupling layer 38). Coupling strength increased by single-sided Cobalt interface dusting. The field necessary for tangential magnetic saturation on the disk is doubled by introducing 1.4nm Cobalt layer as dusting layer 41 into the multi-layer stack illustrated in Figure 2.
  • Figure 8 further shows a glass disk 31 as substrate and a 4 nm Ta seed layer 36 between the substrate 31 and the first soft magnetic layer 2A and a further seed layer 37 comprising 5 nm Ta between the second soft magnetic underlayer 2B and the perpendicular magnetic recording layer 3.
  • a magnetic recording medium comprises a layer stack on a substrate 1, said layer stack comprising a first soft magnetic (sub) layer 2A, a coupling layer 8, a second soft magnetic (sub) layer 2B, storage layer(s) 3, wherein between said coupling layer 8 and soft magnetic (sub) layer 2A and/or 2B a dusting layer 21 and/or 22 is arranged, said dusting layer increasing the magnetic coupling strength between the soft magnetic layers 2A and 2B.
  • Said dusting layer(s) 21, 22 comprise FeCo, Co, Co-alloys with a thickness between 0.2 nm and 2 nm, preferably 0.4 nm and 1.4 nm.
  • a vacuum deposition system adapted to manufacture the perpendicular magnetic recording medium of the present application may comprise a plurality of process stations.
  • a first of said process stations is construed to deposit said soft magnetic (sub) layer 2A.
  • a second process station is equipped with a multi-target sputtering source comprising target materials for coupling layer 8 and dusting layer(s) 21, 22 whereas means are provided to allow for the manufacturing of said coupling layer 8 and dusting layer(s) 21, 22 in said second single process station without the need to transport the substrate to be coated into another process station.
  • a third process station is used to deposit soft magnetic (sub) layer 2B.
  • the transfer between said first, second and third process station may be realized in an inline- arrangement, a cluster-design or a circular arrangement.

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  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)

Abstract

Un support d'enregistrement magnétique perpendiculaire (10, 11, 30) comprend une première sous-couche magnétique douce (2A), une couche de couplage antiferromagnétique non magnétique (8) disposée sur la première sous-couche magnétique douce (2A), une première couche de poudrage (21) disposée sur la couche de couplage antiferromagnétique non magnétique (8) et/ou une seconde couche de poudrage (22) disposée entre la première sous-couche magnétique douce (2A) et la couche de couplage antiferromagnétique non magnétique (8), une seconde sous-couche magnétique douce (2B) disposée sur la première couche de poudrage (21) et au moins une couche d'enregistrement magnétique perpendiculaire (3) disposée sur la seconde sous-couche magnétique douce (2B).
PCT/IB2009/050133 2008-01-14 2009-01-14 Support d'enregistrement magnétique perpendiculaire et son procédé de fabrication Ceased WO2009090606A1 (fr)

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US2076808P 2008-01-14 2008-01-14
US61/020,768 2008-01-14

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761218A (en) * 1984-05-17 1988-08-02 Varian Associates, Inc. Sputter coating source having plural target rings
DE3908252A1 (de) * 1989-03-14 1990-09-20 Leybold Ag Zerstaeubungskathode nach dem magnetron-prinzip
US20020028357A1 (en) * 2000-08-25 2002-03-07 Shukh Alexander M. Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers
US20030022023A1 (en) * 2001-07-26 2003-01-30 Carey Matthew J. Dual-layer perpendicular magnetic recording media with laminated underlayer formed with antiferromagnetically coupled films
US20070065681A1 (en) * 2005-09-22 2007-03-22 Seagate Technology Llc Anti-ferromagnetically coupled soft underlayer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761218A (en) * 1984-05-17 1988-08-02 Varian Associates, Inc. Sputter coating source having plural target rings
DE3908252A1 (de) * 1989-03-14 1990-09-20 Leybold Ag Zerstaeubungskathode nach dem magnetron-prinzip
US20020028357A1 (en) * 2000-08-25 2002-03-07 Shukh Alexander M. Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers
US20030022023A1 (en) * 2001-07-26 2003-01-30 Carey Matthew J. Dual-layer perpendicular magnetic recording media with laminated underlayer formed with antiferromagnetically coupled films
US20070065681A1 (en) * 2005-09-22 2007-03-22 Seagate Technology Llc Anti-ferromagnetically coupled soft underlayer

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