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WO2009078296A1 - Magnetic sensor - Google Patents

Magnetic sensor Download PDF

Info

Publication number
WO2009078296A1
WO2009078296A1 PCT/JP2008/072235 JP2008072235W WO2009078296A1 WO 2009078296 A1 WO2009078296 A1 WO 2009078296A1 JP 2008072235 W JP2008072235 W JP 2008072235W WO 2009078296 A1 WO2009078296 A1 WO 2009078296A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
resistance
cpp
curve
temperature coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/072235
Other languages
French (fr)
Japanese (ja)
Inventor
Yosuke Ide
Masamichi Saito
Yoshihiro Nishiyama
Hidekazu Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2009546221A priority Critical patent/JP5021764B2/en
Publication of WO2009078296A1 publication Critical patent/WO2009078296A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

This aims to provide a magnetic sensor, in which the temperature coefficient of resistance (TCR) (in an absolute value) of an element unit having a magnetoresistance effect element can be simply and properly made smaller than that of the prior art for the entire resistance range on an R-H curve. The element unit (1) comprises a CPP-GMR element (22), in which an antiferromagnetic layer, a fixed magnetic layer having a fixed direction of magnetization, a non-magnetic conductive layer and a free magnetic layer having a direction of magnetization fluctuated by an external magnetic field are sequentially laminated. The element unit (1) further comprises a tunnel magnetoresistance effect (TMR) element (21), in which the temperature coefficient of resistance for the minimum resistivity (Rmin) on the R-H curve and the temperature coefficient of resistance for the maximum resistivity (Rmax) on the R-H curve have signs different from those of the CPP-GMR element (22), and in which the antiferromagnetic layer, the fixed magnetic layer, an insulating partition layer and the free magnetic layer are sequentially laminated. The CPP-GMR element (22) and the TMR element (21) are connected in series.
PCT/JP2008/072235 2007-12-14 2008-12-08 Magnetic sensor Ceased WO2009078296A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009546221A JP5021764B2 (en) 2007-12-14 2008-12-08 Magnetic sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007323078 2007-12-14
JP2007-323078 2007-12-14

Publications (1)

Publication Number Publication Date
WO2009078296A1 true WO2009078296A1 (en) 2009-06-25

Family

ID=40795412

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072235 Ceased WO2009078296A1 (en) 2007-12-14 2008-12-08 Magnetic sensor

Country Status (2)

Country Link
JP (1) JP5021764B2 (en)
WO (1) WO2009078296A1 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011047928A (en) * 2009-07-28 2011-03-10 Tdk Corp Magnetic sensor
JP2014016161A (en) * 2012-07-05 2014-01-30 Tdk Corp Magnetic sensor
JP2015075362A (en) * 2013-10-07 2015-04-20 大同特殊鋼株式会社 Unit element pair and thin film magnetic sensor
WO2015062174A1 (en) * 2013-11-01 2015-05-07 中国科学院物理研究所 Nanometre magnetic multilayer film for temperature sensor and manufacturing method therefor
JP2017133889A (en) * 2016-01-26 2017-08-03 株式会社東芝 Magnetic sensor and magnetic sensor device
WO2017141869A1 (en) 2016-02-16 2017-08-24 愛知製鋼株式会社 Work vehicle system and magnetic marker work method
CN108574039A (en) * 2017-03-13 2018-09-25 Tdk株式会社 magnetic sensor
JP2019056685A (en) * 2017-09-21 2019-04-11 Tdk株式会社 Magnetic sensor
US10416000B2 (en) 2016-10-03 2019-09-17 Tdk Corporation Position detection device having magnetoresistive element
CN110462814A (en) * 2018-03-08 2019-11-15 Tdk株式会社 spin element and magnetic memory
US10632892B2 (en) 2016-02-10 2020-04-28 Aichi Steel Corporation Magnetic marker, magnetic marker retaining method, work apparatus for magnetic markers, and magnetic marker installation method
US10801170B2 (en) 2016-06-17 2020-10-13 Aichi Steel Corporation Magnetic marker and marker system
JP2021532361A (en) * 2018-07-27 2021-11-25 アレグロ・マイクロシステムズ・エルエルシー A magnetoresistive assembly with a TMR element located above or below the GMR element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002071775A (en) * 2000-08-31 2002-03-12 Yamaha Corp Magnetometrioc sensor
JP2003215222A (en) * 2002-01-23 2003-07-30 Denso Corp Magneto-resistance effect element sensor
JP2004117367A (en) * 2003-10-10 2004-04-15 Yamaha Corp Magnetic sensor and method of manufacturing the same
JP2007194322A (en) * 2006-01-18 2007-08-02 Alps Electric Co Ltd In-vehicle GMR angle sensor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112054A (en) * 1997-10-01 1999-04-23 Fujitsu Ltd Magnetic sensor and device using this magnetic sensor
JP4807897B2 (en) * 1999-01-04 2011-11-02 ヤマハ株式会社 Magnetoresistive element and method for manufacturing magnetoresistive element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002071775A (en) * 2000-08-31 2002-03-12 Yamaha Corp Magnetometrioc sensor
JP2003215222A (en) * 2002-01-23 2003-07-30 Denso Corp Magneto-resistance effect element sensor
JP2004117367A (en) * 2003-10-10 2004-04-15 Yamaha Corp Magnetic sensor and method of manufacturing the same
JP2007194322A (en) * 2006-01-18 2007-08-02 Alps Electric Co Ltd In-vehicle GMR angle sensor

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011047928A (en) * 2009-07-28 2011-03-10 Tdk Corp Magnetic sensor
JP2014016161A (en) * 2012-07-05 2014-01-30 Tdk Corp Magnetic sensor
JP2015075362A (en) * 2013-10-07 2015-04-20 大同特殊鋼株式会社 Unit element pair and thin film magnetic sensor
WO2015062174A1 (en) * 2013-11-01 2015-05-07 中国科学院物理研究所 Nanometre magnetic multilayer film for temperature sensor and manufacturing method therefor
US9484527B2 (en) 2013-11-01 2016-11-01 Institute Of Physics, Chinese Academy Of Sciences Nanometer magnetic multilayer film for temperature sensor and manufacturing method therefor
JP2017133889A (en) * 2016-01-26 2017-08-03 株式会社東芝 Magnetic sensor and magnetic sensor device
US10632892B2 (en) 2016-02-10 2020-04-28 Aichi Steel Corporation Magnetic marker, magnetic marker retaining method, work apparatus for magnetic markers, and magnetic marker installation method
US11220201B2 (en) 2016-02-10 2022-01-11 Aichi Steel Corporation Magnetic marker, magnetic marker retaining method, work apparatus for magnetic markers, and magnetic marker installation method
EP3715531A1 (en) 2016-02-10 2020-09-30 Aichi Steel Corporation Magnetic marker installing method and work vehicle system
WO2017141869A1 (en) 2016-02-16 2017-08-24 愛知製鋼株式会社 Work vehicle system and magnetic marker work method
US10801170B2 (en) 2016-06-17 2020-10-13 Aichi Steel Corporation Magnetic marker and marker system
US11060253B2 (en) 2016-06-17 2021-07-13 Aichi Steel Corporation Magnetic marker and marker system
US10416000B2 (en) 2016-10-03 2019-09-17 Tdk Corporation Position detection device having magnetoresistive element
US10895474B2 (en) 2016-10-03 2021-01-19 Tdk Corporation Magnetoresistive element and method of manufacturing such, and position detection device
DE102017114715B4 (en) 2016-10-03 2024-02-22 Tdk Corporation Magnetoresistive element and manufacturing method therefor, and position detection device
US10418546B2 (en) 2017-03-13 2019-09-17 Tdk Corporation Magnetic sensor
JP2018152452A (en) * 2017-03-13 2018-09-27 Tdk株式会社 Magnetic sensor
CN108574039A (en) * 2017-03-13 2018-09-25 Tdk株式会社 magnetic sensor
CN108574039B (en) * 2017-03-13 2022-02-11 Tdk株式会社 Magnetic sensor
JP2019056685A (en) * 2017-09-21 2019-04-11 Tdk株式会社 Magnetic sensor
CN110462814A (en) * 2018-03-08 2019-11-15 Tdk株式会社 spin element and magnetic memory
JP2021532361A (en) * 2018-07-27 2021-11-25 アレグロ・マイクロシステムズ・エルエルシー A magnetoresistive assembly with a TMR element located above or below the GMR element
JP7366118B2 (en) 2018-07-27 2023-10-20 アレグロ・マイクロシステムズ・エルエルシー Magnetoresistive assembly with TMR element placed above or below GMR element

Also Published As

Publication number Publication date
JP5021764B2 (en) 2012-09-12
JPWO2009078296A1 (en) 2011-04-28

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