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WO2009069544A1 - シリコン系薄膜光電変換装置 - Google Patents

シリコン系薄膜光電変換装置 Download PDF

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Publication number
WO2009069544A1
WO2009069544A1 PCT/JP2008/071208 JP2008071208W WO2009069544A1 WO 2009069544 A1 WO2009069544 A1 WO 2009069544A1 JP 2008071208 W JP2008071208 W JP 2008071208W WO 2009069544 A1 WO2009069544 A1 WO 2009069544A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
thin film
layer
silicon thin
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071208
Other languages
English (en)
French (fr)
Inventor
Yuko Tawada
Masahiro Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaneka Corp
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corp filed Critical Kaneka Corp
Priority to US12/743,811 priority Critical patent/US20100275996A1/en
Priority to JP2009543772A priority patent/JP5291633B2/ja
Priority to EP08854520.7A priority patent/EP2216826A4/en
Publication of WO2009069544A1 publication Critical patent/WO2009069544A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

　本発明は高い光電変換特性を有するシリコン系薄膜光電変換装置を低コストで提供することを目的とする。本発明のシリコン系薄膜光電変換装置（５）は、順次積層された１導電型半導体層（３１）、結晶質シリコン系光電変換層（３２２）、および逆導電型半導体層（３３）を含む結晶質光電変換ユニット（３）を含み、１導電型半導体層（３１）と光電変換層（３２２）との間にはその光電変換層（３２２）とは異なる材質の実質的にｉ型の結晶質シリコン系介在層（３２１）をさらに含み、光電変換層（３２２）は介在層（３２１）と直に接していることを特徴としている。    
PCT/JP2008/071208 2007-11-30 2008-11-21 シリコン系薄膜光電変換装置 Ceased WO2009069544A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/743,811 US20100275996A1 (en) 2007-11-30 2008-11-21 Silicon-based thin-film photoelectric conversion device
JP2009543772A JP5291633B2 (ja) 2007-11-30 2008-11-21 シリコン系薄膜光電変換装置およびその製造方法
EP08854520.7A EP2216826A4 (en) 2007-11-30 2008-11-21 PHOTOELECTRIC SILICON THIN FILM CONVERSION DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007310487 2007-11-30
JP2007-310487 2007-11-30

Publications (1)

Publication Number Publication Date
WO2009069544A1 true WO2009069544A1 (ja) 2009-06-04

Family

ID=40678442

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071208 Ceased WO2009069544A1 (ja) 2007-11-30 2008-11-21 シリコン系薄膜光電変換装置

Country Status (4)

Country Link
US (1) US20100275996A1 (ja)
EP (1) EP2216826A4 (ja)
JP (1) JP5291633B2 (ja)
WO (1) WO2009069544A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011125878A1 (ja) * 2010-04-02 2011-10-13 株式会社アルバック 光電変換装置及び光電変換装置の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7955890B2 (en) * 2008-06-24 2011-06-07 Applied Materials, Inc. Methods for forming an amorphous silicon film in display devices
FR2955702B1 (fr) * 2010-01-27 2012-01-27 Commissariat Energie Atomique Cellule photovoltaique comprenant un film mince de passivation en oxyde cristallin de silicium et procede de realisation
DE102010021172B4 (de) * 2010-05-21 2013-04-18 Siemens Aktiengesellschaft Strahlenwandler mit einer direkt konvertierenden Halbleiterschicht und Verfahren zur Herstellung eines solchen Strahlenwandlers
KR101292061B1 (ko) * 2010-12-21 2013-08-01 엘지전자 주식회사 박막 태양전지
DE112012006605B4 (de) * 2012-06-29 2021-10-14 Panasonic Intellectual Property Management Co., Ltd. Solarzelle

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JPH06267868A (ja) * 1993-03-16 1994-09-22 Fuji Electric Co Ltd シリコンオキサイド半導体膜の成膜方法
JPH1187742A (ja) 1997-09-01 1999-03-30 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置
JPH11135818A (ja) * 1997-10-30 1999-05-21 Sharp Corp 太陽電池
JPH11261087A (ja) * 1998-03-13 1999-09-24 Canon Inc 光起電力素子
JPH11307790A (ja) * 1998-04-22 1999-11-05 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置
JP2000188413A (ja) * 1998-12-22 2000-07-04 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置とその製造方法
JP2002343991A (ja) * 2001-05-16 2002-11-29 Fuji Electric Co Ltd 非単結晶太陽電池
JP2003051604A (ja) * 2001-08-03 2003-02-21 Sanyo Electric Co Ltd 光起電力素子
JP2003258286A (ja) 2002-03-04 2003-09-12 Fuji Electric Co Ltd 薄膜太陽電池とその製造方法
JP2004311704A (ja) * 2003-04-07 2004-11-04 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置用基板及びそれを用いた薄膜光電変換装置

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CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
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DE102004061360A1 (de) * 2004-12-21 2006-07-13 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer Dünnschichtsolarzelle mit mikrokristallinem Silizium sowie Schichtfolge
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04266067A (ja) * 1991-02-20 1992-09-22 Canon Inc 光起電力素子
JPH06267868A (ja) * 1993-03-16 1994-09-22 Fuji Electric Co Ltd シリコンオキサイド半導体膜の成膜方法
JPH1187742A (ja) 1997-09-01 1999-03-30 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置
JPH11135818A (ja) * 1997-10-30 1999-05-21 Sharp Corp 太陽電池
JPH11261087A (ja) * 1998-03-13 1999-09-24 Canon Inc 光起電力素子
JPH11307790A (ja) * 1998-04-22 1999-11-05 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置
JP2000188413A (ja) * 1998-12-22 2000-07-04 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置とその製造方法
JP2002343991A (ja) * 2001-05-16 2002-11-29 Fuji Electric Co Ltd 非単結晶太陽電池
JP2003051604A (ja) * 2001-08-03 2003-02-21 Sanyo Electric Co Ltd 光起電力素子
JP2003258286A (ja) 2002-03-04 2003-09-12 Fuji Electric Co Ltd 薄膜太陽電池とその製造方法
JP2004311704A (ja) * 2003-04-07 2004-11-04 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置用基板及びそれを用いた薄膜光電変換装置

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Title
See also references of EP2216826A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011125878A1 (ja) * 2010-04-02 2011-10-13 株式会社アルバック 光電変換装置及び光電変換装置の製造方法
JPWO2011125878A1 (ja) * 2010-04-02 2013-07-11 株式会社アルバック 光電変換装置及び光電変換装置の製造方法

Also Published As

Publication number Publication date
EP2216826A1 (en) 2010-08-11
JPWO2009069544A1 (ja) 2011-04-14
JP5291633B2 (ja) 2013-09-18
US20100275996A1 (en) 2010-11-04
EP2216826A4 (en) 2016-10-12

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