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WO2009066725A1 - ＺｎＯ系半導体素子 - Google Patents

ＺｎＯ系半導体素子 Download PDF

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Publication number
WO2009066725A1
WO2009066725A1 PCT/JP2008/071108 JP2008071108W WO2009066725A1 WO 2009066725 A1 WO2009066725 A1 WO 2009066725A1 JP 2008071108 W JP2008071108 W JP 2008071108W WO 2009066725 A1 WO2009066725 A1 WO 2009066725A1
Authority
WO
WIPO (PCT)
Prior art keywords
zno
substrate
group semiconductor
plane
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071108
Other languages
English (en)
French (fr)
Inventor
Ken Nakahara
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/734,772 priority Critical patent/US20110037067A1/en
Priority to CN2008801197503A priority patent/CN101889347A/zh
Publication of WO2009066725A1 publication Critical patent/WO2009066725A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/862—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H10P14/2914—
    • H10P14/2918—
    • H10P14/2926—
    • H10P14/3426—

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

積層側の主面がＣ面を有するＭｇＺｎＯ基板上に平坦なＺｎＯ系半導体層を成長させることができるＺｎＯ系半導体素子を提供する。 　主面がＣ面を有するＭｇｘＺｎ１－ｘＯ（０≦ｘ＜１）基板を用い、前記主面の法線を基板結晶軸のｍ軸ｃ軸平面に射影した射影軸がｃ軸となす角Φｍを、０＜Φｍ≦３となるように形成した主面上に、ＺｎＯ系半導体層２～５がエピタキシャル成長されている。そして、ＺｎＯ系半導体層５上にはｐ電極８が、ＭｇｘＺｎ１－ｘＯ基板１の下側にはｎ電極９が形成されている。このようにして、ＭｇｘＺｎ１－ｘＯ基板１の表面に、ｍ軸方向に並ぶ規則的なステップを形成することで、ステップバンチングと呼ばれる現象を防ぎ、基板１上に積層される半導体層の膜の平坦性を向上させることができる。 　
PCT/JP2008/071108 2007-11-22 2008-11-20 ＺｎＯ系半導体素子 Ceased WO2009066725A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/734,772 US20110037067A1 (en) 2007-11-22 2008-11-20 Zno-group semiconductor element
CN2008801197503A CN101889347A (zh) 2007-11-22 2008-11-20 ZnO系半导体元件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-303542 2007-11-22
JP2007303542A JP5392885B2 (ja) 2007-11-22 2007-11-22 ＺｎＯ系半導体素子

Publications (1)

Publication Number Publication Date
WO2009066725A1 true WO2009066725A1 (ja) 2009-05-28

Family

ID=40667547

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071108 Ceased WO2009066725A1 (ja) 2007-11-22 2008-11-20 ＺｎＯ系半導体素子

Country Status (5)

Country Link
US (1) US20110037067A1 (ja)
JP (1) JP5392885B2 (ja)
CN (1) CN101889347A (ja)
TW (1) TW200929626A (ja)
WO (1) WO2009066725A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013028519A (ja) * 2011-06-24 2013-02-07 Fujikura Ltd 窒素ドープ酸化亜鉛系薄膜の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101729933B1 (ko) * 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
JP6069688B2 (ja) * 2012-06-18 2017-02-01 富士通株式会社 化合物半導体装置及びその製造方法
JP6858640B2 (ja) * 2017-05-24 2021-04-14 パナソニック株式会社 ＳｃＡｌＭｇＯ４基板及び窒化物半導体装置
TWI854083B (zh) * 2020-01-10 2024-09-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004056114A (ja) * 2002-05-30 2004-02-19 Kyocera Corp 半導体装置
JP2004200389A (ja) * 2002-12-18 2004-07-15 Sharp Corp 酸化物半導体発光素子
JP2004247681A (ja) * 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子
JP2005203721A (ja) * 2003-12-18 2005-07-28 Matsushita Electric Ind Co Ltd 半導体装置
JP2006093683A (ja) * 2004-08-24 2006-04-06 Toshiba Corp 半導体基板、半導体素子、及び半導体発光素子
JP2006156958A (ja) * 2004-10-27 2006-06-15 Mitsubishi Electric Corp 半導体素子及び半導素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050006635A1 (en) * 2003-03-26 2005-01-13 Kyocera Corporation Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
US7339255B2 (en) * 2004-08-24 2008-03-04 Kabushiki Kaisha Toshiba Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
JP4939844B2 (ja) * 2006-06-08 2012-05-30 ローム株式会社 ＺｎＯ系半導体素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004056114A (ja) * 2002-05-30 2004-02-19 Kyocera Corp 半導体装置
JP2004200389A (ja) * 2002-12-18 2004-07-15 Sharp Corp 酸化物半導体発光素子
JP2004247681A (ja) * 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子
JP2005203721A (ja) * 2003-12-18 2005-07-28 Matsushita Electric Ind Co Ltd 半導体装置
JP2006093683A (ja) * 2004-08-24 2006-04-06 Toshiba Corp 半導体基板、半導体素子、及び半導体発光素子
JP2006156958A (ja) * 2004-10-27 2006-06-15 Mitsubishi Electric Corp 半導体素子及び半導素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013028519A (ja) * 2011-06-24 2013-02-07 Fujikura Ltd 窒素ドープ酸化亜鉛系薄膜の製造方法

Also Published As

Publication number Publication date
JP2009130133A (ja) 2009-06-11
CN101889347A (zh) 2010-11-17
US20110037067A1 (en) 2011-02-17
TW200929626A (en) 2009-07-01
JP5392885B2 (ja) 2014-01-22

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