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WO2009066100A3 - Capteurs magnétoélectriques - Google Patents

Capteurs magnétoélectriques Download PDF

Info

Publication number
WO2009066100A3
WO2009066100A3 PCT/GB2008/051081 GB2008051081W WO2009066100A3 WO 2009066100 A3 WO2009066100 A3 WO 2009066100A3 GB 2008051081 W GB2008051081 W GB 2008051081W WO 2009066100 A3 WO2009066100 A3 WO 2009066100A3
Authority
WO
WIPO (PCT)
Prior art keywords
layers
magnetoelectric
piezoelectric material
magnetostrictive
magnetostrictive metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2008/051081
Other languages
English (en)
Other versions
WO2009066100A2 (fr
Inventor
Emil Casey Israel
Neil David Mathur
Andrew Peter Matthews
James Floyd Scott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge Enterprise Ltd
Original Assignee
Cambridge Enterprise Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Enterprise Ltd filed Critical Cambridge Enterprise Ltd
Publication of WO2009066100A2 publication Critical patent/WO2009066100A2/fr
Publication of WO2009066100A3 publication Critical patent/WO2009066100A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/965—Switches controlled by moving an element forming part of the switch
    • H03K17/97—Switches controlled by moving an element forming part of the switch using a magnetic movable element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
    • G01R33/0082—Compensation, e.g. compensating for temperature changes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

Cette invention porte sur des capteurs magnétoélectriques et sur des procédés de détection. Le capteur magnétoélectrique comprend : des première et seconde connexions électriques ; une pluralité de couches de métal magnétostrictif, un premier ensemble desdites couches dudit métal magnétostrictif étant connecté à ladite première connexion d'électrode et un second ensemble desdites couches dudit métal magnétostrictif étant connecté à la seconde connexion d'électrode, lesdits premier et second ensembles de couches de métal magnétostrictif étant interdigités ; et une pluralité de couches de matériau piézoélectrique entre lesdites couches de matériau magnétostrictif ; une couche précitée de matériau piézoélectrique et des couches dudit métal magnétostrictif de chaque côté de ladite couche de matériau piézoélectrique définissant un élément de détection magnétoélectrique ; et une pluralité desdits éléments de détection magnétoélectrique étant connectés électriquement en parallèle de sorte qu'une variation de champ magnétique est de nature à provoquer la circulation d'un courant généré par ladite pluralité desdites couches de matériau piézoélectrique.
PCT/GB2008/051081 2007-11-19 2008-11-18 Capteurs magnétoélectriques Ceased WO2009066100A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0722551.9 2007-11-19
GBGB0722551.9A GB0722551D0 (en) 2007-11-19 2007-11-19 Magnetoelectric sensors

Publications (2)

Publication Number Publication Date
WO2009066100A2 WO2009066100A2 (fr) 2009-05-28
WO2009066100A3 true WO2009066100A3 (fr) 2009-12-17

Family

ID=38896457

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2008/051081 Ceased WO2009066100A2 (fr) 2007-11-19 2008-11-18 Capteurs magnétoélectriques

Country Status (2)

Country Link
GB (1) GB0722551D0 (fr)
WO (1) WO2009066100A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521842B2 (en) * 2006-06-22 2009-04-21 Cooper Tire & Rubber Co. Magnetostrictive / piezo remote power generation, battery and method
CN106688116B (zh) * 2014-09-11 2020-07-17 锡克拜控股有限公司 热释电发生器
RU193362U1 (ru) * 2019-08-08 2019-10-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "МИРЭА - Российский технологический университет" Планарный магнитоэлектрический датчик магнитного поля
CN110729396B (zh) * 2019-09-25 2022-09-16 郑州轻工业学院 一种具有自放大能力的磁电薄膜传感器
CN115189112B (zh) * 2022-07-08 2024-05-14 郑州轻工业大学 二分式六线-三端口磁电功率分割器及其测量装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB709528A (en) * 1951-01-24 1954-05-26 Clevite Corp A magnetostrictive and electromechanical transducer device
US5675252A (en) * 1995-06-19 1997-10-07 Sqm Technology, Inc. Composite structured piezomagnetometer
WO2000060369A1 (fr) * 1999-04-05 2000-10-12 Spinix Corporation Capteurs passifs de champ magnetique a semi-conducteurs et leurs applications
US20040126620A1 (en) * 2002-10-18 2004-07-01 Dwight Viehland Magnetoelectric magnetic field sensor with longitudinally biased magnetostrictive layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB709528A (en) * 1951-01-24 1954-05-26 Clevite Corp A magnetostrictive and electromechanical transducer device
US5675252A (en) * 1995-06-19 1997-10-07 Sqm Technology, Inc. Composite structured piezomagnetometer
WO2000060369A1 (fr) * 1999-04-05 2000-10-12 Spinix Corporation Capteurs passifs de champ magnetique a semi-conducteurs et leurs applications
US20040126620A1 (en) * 2002-10-18 2004-07-01 Dwight Viehland Magnetoelectric magnetic field sensor with longitudinally biased magnetostrictive layer

Non-Patent Citations (14)

* Cited by examiner, † Cited by third party
Title
BELL ET AL: "Ferroelectrics: The role of ceramic science and engineering", JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, ELSEVIER SCIENCE PUBLISHERS, BARKING, ESSEX, GB, vol. 28, no. 7, 25 January 2008 (2008-01-25), pages 1307 - 1317, XP022534037, ISSN: 0955-2219 *
DONG SHUXIANG ET AL: "Extremely low frequency response of magnetoelectric multilayer composites", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 86, no. 10, 28 February 2005 (2005-02-28), pages 102901 - 102901, XP012064534, ISSN: 0003-6951 *
DONG SHUXIANG ET AL: "Giant magnetoelectric effect (under a dc magnetic bias of 2Oe) in laminate composites of FeBSiC alloy ribbons and Pb(Zn1â 3,Nb2â 3)O3â 7%PbTiO3 fibers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 91, no. 2, 12 July 2007 (2007-07-12), pages 22915 - 22915, XP012100076, ISSN: 0003-6951 *
FETISOV Y ET AL: "Magnetic field sensors using magnetoelectric effect in Ferrite-Piezoelectric multilayers", SENSORS, 2004. PROCEEDINGS OF IEEE VIENNA, AUSTRIA OCT. 24 - 27, 2004, PISCATAWAY, NJ, USA,IEEE, 24 October 2004 (2004-10-24), pages 1106 - 1108, XP010793604, ISBN: 978-0-7803-8692-1 *
FETISOV Y K ET AL: "Magnetoelectric effect in multilayer ferrite-piesoelectric structures", JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 272-276, 1 May 2004 (2004-05-01), pages 2064 - 2066, XP004514283, ISSN: 0304-8853 *
FETISOV Y K ET AL: "Wide-band magnetoelectric characterization of a ferrite-piezoelectric multilayer using a pulsed magnetic field", SOLID STATE COMMUNICATIONS, OXFORD, vol. 132, no. 1, 1 October 2004 (2004-10-01), pages 13 - 17, XP004532443, ISSN: 0038-1098 *
ISRAEL C ET AL: "Converse magnetoelectric coupling in multilayer capacitors", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 93, no. 17, 29 October 2008 (2008-10-29), pages 173501 - 173501, XP012112124, ISSN: 0003-6951 *
MANFRED FIEBIG: "TOPICAL REVIEW; Revival of the magnetoelectric effect; Topical Review", JOURNAL OF PHYSICS D. APPLIED PHYSICS, IOP PUBLISHING, BRISTOL, GB, vol. 38, no. 8, 21 April 2005 (2005-04-21), pages R123 - R152, XP020083659, ISSN: 0022-3727 *
XING Z P ET AL: "Modeling and detection of quasi-static nanotesla magnetic field variations using magnetoelectric laminate sensors; Modeling and detection of quasi-static nanotesla magnetic field variations", MEASUREMENT SCIENCE AND TECHNOLOGY, IOP, BRISTOL, GB, vol. 19, no. 1, 1 January 2008 (2008-01-01), pages 15206, XP020129352, ISSN: 0957-0233 *
XING ZENGPING ET AL: "Resonant bending mode of Terfenol-D/steel/Pb(Zr,Ti)O3 magnetoelectric laminate composites", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 89, no. 11, 14 September 2006 (2006-09-14), pages 112911 - 112911, XP012085747, ISSN: 0003-6951 *
ZHAI JUNYI ET AL: "Detection of pico-Tesla magnetic fields using magneto-electric sensors at room temperature", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 88, no. 6, 9 February 2006 (2006-02-09), pages 62510 - 062510, XP012082758, ISSN: 0003-6951 *
ZHAI JUNYI ET AL: "Geomagnetic sensor based on giant magnetoelectric effect", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 91, no. 12, 20 September 2007 (2007-09-20), pages 123513 - 123513, XP012099343, ISSN: 0003-6951 *
ZHAI JUNYI ET AL: "Giant magnetoelectric effect in Metglas/polyvinylidene-fluoride laminates", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 89, no. 8, 22 August 2006 (2006-08-22), pages 83507 - 083507, XP012088658, ISSN: 0003-6951 *
ZHAI JUNYI ET AL: "Thermal noise cancellation in symmetric magnetoelectric bimorph laminates", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 93, no. 7, 22 August 2008 (2008-08-22), pages 72906 - 72906, XP012113567, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
WO2009066100A2 (fr) 2009-05-28
GB0722551D0 (en) 2007-12-27

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