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WO2009063583A1 - Method for manufacturing flexible semiconductor device and flexible semiconductor device - Google Patents

Method for manufacturing flexible semiconductor device and flexible semiconductor device Download PDF

Info

Publication number
WO2009063583A1
WO2009063583A1 PCT/JP2008/002477 JP2008002477W WO2009063583A1 WO 2009063583 A1 WO2009063583 A1 WO 2009063583A1 JP 2008002477 W JP2008002477 W JP 2008002477W WO 2009063583 A1 WO2009063583 A1 WO 2009063583A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
insulating layer
flexible semiconductor
gate electrode
flexible substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002477
Other languages
French (fr)
Japanese (ja)
Inventor
Seiichi Nakatani
Koichi Hirano
Yoshihisa Yamashita
Shingo Komatsu
Takashi Ichiryu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of WO2009063583A1 publication Critical patent/WO2009063583A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H10W20/023—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

After forming a gate electrode (20g) on a flexible substrate (10), an insulating layer (30) formed on a protective film (34) is transferred to a major surface of the flexible substrate (10) having the gate electrode (20g). Since the insulating layer (30) is pressed against the major surface of the flexible substrate (10), it is transferred onto the major surface of the flexible substrate (10) in such a manner that the gate electrode (20g) is embedded therein. Then, after making source/drain electrodes (20s, 20d) on the insulating layer (30) at positions corresponding to the gate electrode (20g), a semiconductor layer (40) is formed on the insulating layer (30) having the source/drain electrodes. A part of the insulating layer (30) on the gate electrode (20g) functions as a gate insulating film (35), while a part of the semiconductor layer (40) between the source/drain electrodes (20s, 20d) on the insulating layer (30) functions as a channel.
PCT/JP2008/002477 2007-11-16 2008-09-09 Method for manufacturing flexible semiconductor device and flexible semiconductor device Ceased WO2009063583A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007297571A JP2011023376A (en) 2007-11-16 2007-11-16 Flexible semiconductor device, and method of manufacturing the same
JP2007-297571 2007-11-16

Publications (1)

Publication Number Publication Date
WO2009063583A1 true WO2009063583A1 (en) 2009-05-22

Family

ID=40638439

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002477 Ceased WO2009063583A1 (en) 2007-11-16 2008-09-09 Method for manufacturing flexible semiconductor device and flexible semiconductor device

Country Status (2)

Country Link
JP (1) JP2011023376A (en)
WO (1) WO2009063583A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010016207A1 (en) * 2008-08-04 2010-02-11 パナソニック株式会社 Flexible semiconductor device and method for manufacturing same
WO2010016206A1 (en) * 2008-08-04 2010-02-11 パナソニック株式会社 Method for manufacturing flexible semiconductor device
WO2010058541A1 (en) * 2008-11-18 2010-05-27 パナソニック株式会社 Flexible semiconductor device and method for manufacturing same
US9640718B2 (en) 2013-03-04 2017-05-02 Kabushiki Kaisha Toshiba Method for manufacturing display element, display element, and display device
JP2022098891A (en) * 2020-12-22 2022-07-04 日本放送協会 Multi-display

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103151368A (en) * 2013-02-05 2013-06-12 京东方科技集团股份有限公司 Array substrate and OLED (organic light emitting diode) display device
TW202032226A (en) * 2020-01-14 2020-09-01 友達光電股份有限公司 Structure of flexible circuits

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005354012A (en) * 2004-06-14 2005-12-22 Canon Inc Field effect transistor and manufacturing method thereof
JP2007027525A (en) * 2005-07-20 2007-02-01 Sony Corp Semiconductor device manufacturing method, semiconductor device, and insulating film forming method
JP2007042852A (en) * 2005-08-03 2007-02-15 Kansai Paint Co Ltd Transistor and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005354012A (en) * 2004-06-14 2005-12-22 Canon Inc Field effect transistor and manufacturing method thereof
JP2007027525A (en) * 2005-07-20 2007-02-01 Sony Corp Semiconductor device manufacturing method, semiconductor device, and insulating film forming method
JP2007042852A (en) * 2005-08-03 2007-02-15 Kansai Paint Co Ltd Transistor and manufacturing method thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010016207A1 (en) * 2008-08-04 2010-02-11 パナソニック株式会社 Flexible semiconductor device and method for manufacturing same
WO2010016206A1 (en) * 2008-08-04 2010-02-11 パナソニック株式会社 Method for manufacturing flexible semiconductor device
US8343822B2 (en) 2008-08-04 2013-01-01 Panasonic Corporation Flexible semiconductor device and method for manufacturing same
US8525172B2 (en) 2008-08-04 2013-09-03 Panasonic Corporation Flexible semiconductor device
WO2010058541A1 (en) * 2008-11-18 2010-05-27 パナソニック株式会社 Flexible semiconductor device and method for manufacturing same
US8975626B2 (en) 2008-11-18 2015-03-10 Panasonic Intellectual Property Management Co., Ltd. Flexible semiconductor device
US9640718B2 (en) 2013-03-04 2017-05-02 Kabushiki Kaisha Toshiba Method for manufacturing display element, display element, and display device
JP2022098891A (en) * 2020-12-22 2022-07-04 日本放送協会 Multi-display
JP7614829B2 (en) 2020-12-22 2025-01-16 日本放送協会 Multi-Display

Also Published As

Publication number Publication date
JP2011023376A (en) 2011-02-03

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