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WO2009060862A1 - エポキシ基含有オルガノシロキサン化合物、転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法 - Google Patents

エポキシ基含有オルガノシロキサン化合物、転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法 Download PDF

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Publication number
WO2009060862A1
WO2009060862A1 PCT/JP2008/070122 JP2008070122W WO2009060862A1 WO 2009060862 A1 WO2009060862 A1 WO 2009060862A1 JP 2008070122 W JP2008070122 W JP 2008070122W WO 2009060862 A1 WO2009060862 A1 WO 2009060862A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
fine pattern
curable composition
curable
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/070122
Other languages
English (en)
French (fr)
Inventor
Katsutoshi Morinaka
Yoshikazu Arai
Hiroshi Uchida
Toshio Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to EP08847167.7A priority Critical patent/EP2218724B1/en
Priority to KR1020107010111A priority patent/KR101375445B1/ko
Priority to CN2008801149393A priority patent/CN101848915B/zh
Priority to US12/741,148 priority patent/US8604150B2/en
Priority to JP2009540059A priority patent/JP5266248B2/ja
Publication of WO2009060862A1 publication Critical patent/WO2009060862A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0838—Compounds with one or more Si-O-Si sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
    • C08G59/306—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
    • C08G59/3281—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Polymers & Plastics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Polymers (AREA)
  • Epoxy Resins (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

　本発明は、高いスループットで微細パターンを形成することができる工法であるＵＶナノインプリント法に適用でき、また場合によっては熱ナノインプリント法にも適用でき、しかもフッ素系ガスと酸素ガスとのエッチング速度の選択性が高い微細パターンを形成することができる転写材料用硬化性組成物を提供することを目的とする。 　本発明の転写材料用硬化性組成物は、Ｓｉ－Ｈ基を有するケイ素化合物（Ａ）と、硬化性官能基および該硬化性官能基以外の炭素―炭素二重結合を有する化合物（Ｂ）とをヒドロシリル化反応させることにより製造される硬化性ケイ素化合物を含むことを特徴としている。
PCT/JP2008/070122 2007-11-07 2008-11-05 エポキシ基含有オルガノシロキサン化合物、転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法 Ceased WO2009060862A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08847167.7A EP2218724B1 (en) 2007-11-07 2008-11-05 Epoxy group-containing organosiloxane compound, curable composition for transfer material, and fine pattern forming method using the composition
KR1020107010111A KR101375445B1 (ko) 2007-11-07 2008-11-05 에폭시기 함유 오르가노실록산 화합물, 전사 재료용 경화성 조성물 및 상기 조성물을 사용한 미세 패턴 형성 방법
CN2008801149393A CN101848915B (zh) 2007-11-07 2008-11-05 含环氧基的有机硅氧烷化合物、转印材料用固化性组合物和使用该组合物的微细图案形成方法
US12/741,148 US8604150B2 (en) 2007-11-07 2008-11-05 Epoxy group-containing organosiloxane compound, curable composition for transfer materials and method for forming micropattern using the composition
JP2009540059A JP5266248B2 (ja) 2007-11-07 2008-11-05 エポキシ基含有オルガノシロキサン化合物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-289470 2007-11-07
JP2007289470 2007-11-07

Publications (1)

Publication Number Publication Date
WO2009060862A1 true WO2009060862A1 (ja) 2009-05-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070122 Ceased WO2009060862A1 (ja) 2007-11-07 2008-11-05 エポキシ基含有オルガノシロキサン化合物、転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法

Country Status (7)

Country Link
US (1) US8604150B2 (ja)
EP (1) EP2218724B1 (ja)
JP (2) JP5266248B2 (ja)
KR (1) KR101375445B1 (ja)
CN (1) CN101848915B (ja)
TW (1) TWI419895B (ja)
WO (1) WO2009060862A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
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JP2011018722A (ja) * 2009-07-08 2011-01-27 Dainippon Printing Co Ltd ナノインプリント方法およびその方法を用いて形成されたパターン形成体、並びにナノインプリント装置
JP2011020360A (ja) * 2009-07-16 2011-02-03 Konica Minolta Holdings Inc 微細な凹凸パターンを有するフィルム構造体の形成方法、微細な凹凸パターンを有するフィルム構造体、太陽エネルギー収集用プリズムシート及び立体視ディスプレイ用光学フィルム
JP2011063568A (ja) * 2009-09-18 2011-03-31 Showa Denko Kk ヒドロシリル化合物の製造方法
JP2011236207A (ja) * 2010-04-14 2011-11-24 Showa Denko Kk エポキシ化合物、エポキシ基含有シリコーン化合物および硬化性組成物
WO2012020730A1 (ja) * 2010-08-11 2012-02-16 昭和電工株式会社 エポキシシリコーン縮合物、該縮合物を含む硬化性組成物およびその硬化物
JP2012049301A (ja) * 2010-08-26 2012-03-08 Daicel Corp 微細パターン形成用放射線硬化性樹脂組成物、及び該組成物を用いた微細構造体の製造方法
JP2013051410A (ja) * 2011-07-29 2013-03-14 Dic Corp ドライエッチングレジスト材料、レジスト膜及びパターン形成物
WO2013080741A1 (ja) * 2011-11-30 2013-06-06 セントラル硝子株式会社 光重合性組成物並びにそれを用いたパターン形成方法
JP2013251560A (ja) * 2013-07-18 2013-12-12 Dainippon Printing Co Ltd ナノインプリント方法
WO2015056723A1 (ja) * 2013-10-16 2015-04-23 日本化薬株式会社 硬化性樹脂組成物およびその硬化物

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CN102508409B (zh) * 2011-10-27 2014-03-19 无锡英普林纳米科技有限公司 一种紫外光辅助热固化纳米压印技术与材料
CN107255905A (zh) * 2012-01-27 2017-10-17 旭化成株式会社 干式蚀刻用热反应型抗蚀剂材料、模具的制造方法及模具
EP3112389B1 (en) * 2014-02-28 2019-06-05 Daicel Corporation Curable composition, cured product thereof, and wafer level lens
WO2015137438A1 (ja) 2014-03-14 2015-09-17 Dic株式会社 酸素プラズマエッチング用レジスト材料、レジスト膜、及びそれを用いた積層体
CN105278249B (zh) * 2014-05-30 2019-10-25 青岛科技大学 一种立体光刻快速成形阳离子型聚硅氧烷基光敏树脂组合物及其制备方法和应用
CN105295050B (zh) * 2014-06-20 2017-11-21 北京化工大学 一类含硅氧链三芳基硫鎓盐及其在光固化环氧树脂中应用
JP6640245B2 (ja) 2015-04-29 2020-02-05 スリーエム イノベイティブ プロパティズ カンパニー 膨潤性フィルム形成組成物及びそれを用いたナノインプリントリソグラフィの方法
TWI570187B (zh) 2015-12-17 2017-02-11 財團法人工業技術研究院 光學固態預聚物與模塑組成物
JP6515047B2 (ja) * 2016-03-11 2019-05-15 東芝メモリ株式会社 半導体装置及びその製造方法
CN110256677B (zh) * 2019-07-15 2022-04-12 广州福泽新材料有限公司 环氧改性三氟丙基硅油及其制备方法
JP2022170092A (ja) * 2021-04-28 2022-11-10 東京応化工業株式会社 パターン形成方法
KR102751573B1 (ko) * 2021-08-27 2025-01-10 부산대학교 산학협력단 나노패턴 고분자 필름의 표면 경도 및 인성 제어 방법
CN116655681B (zh) * 2023-05-16 2025-09-02 南方科技大学嘉兴研究院 含氟有机硅环氧单体及其制备方法、及其在制备压印胶的应用、压印胶及其制备方法、一种压印方法

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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011018722A (ja) * 2009-07-08 2011-01-27 Dainippon Printing Co Ltd ナノインプリント方法およびその方法を用いて形成されたパターン形成体、並びにナノインプリント装置
JP2011020360A (ja) * 2009-07-16 2011-02-03 Konica Minolta Holdings Inc 微細な凹凸パターンを有するフィルム構造体の形成方法、微細な凹凸パターンを有するフィルム構造体、太陽エネルギー収集用プリズムシート及び立体視ディスプレイ用光学フィルム
JP2011063568A (ja) * 2009-09-18 2011-03-31 Showa Denko Kk ヒドロシリル化合物の製造方法
JP2011236207A (ja) * 2010-04-14 2011-11-24 Showa Denko Kk エポキシ化合物、エポキシ基含有シリコーン化合物および硬化性組成物
CN103154090A (zh) * 2010-08-11 2013-06-12 昭和电工株式会社 环氧硅氧烷缩合物、含有该缩合物的固化性组合物和其固化物
WO2012020730A1 (ja) * 2010-08-11 2012-02-16 昭和電工株式会社 エポキシシリコーン縮合物、該縮合物を含む硬化性組成物およびその硬化物
US8957136B2 (en) 2010-08-11 2015-02-17 Showa Denko K.K. Epoxysilicone condensate, curable composition comprising condensate, and cured product thereof
CN103154090B (zh) * 2010-08-11 2015-03-04 昭和电工株式会社 环氧硅氧烷缩合物、含有该缩合物的固化性组合物和其固化物
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EP2218724A1 (en) 2010-08-18
KR20100068482A (ko) 2010-06-23
JP5266248B2 (ja) 2013-08-21
JP5570622B2 (ja) 2014-08-13
CN101848915A (zh) 2010-09-29
EP2218724A4 (en) 2012-03-21
JPWO2009060862A1 (ja) 2011-03-24
US8604150B2 (en) 2013-12-10
EP2218724B1 (en) 2015-01-07
TW200940558A (en) 2009-10-01
KR101375445B1 (ko) 2014-03-17

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