[go: up one dir, main page]

WO2009060585A1 - 露光装置及び露光方法、並びにデバイス製造方法 - Google Patents

露光装置及び露光方法、並びにデバイス製造方法 Download PDF

Info

Publication number
WO2009060585A1
WO2009060585A1 PCT/JP2008/003160 JP2008003160W WO2009060585A1 WO 2009060585 A1 WO2009060585 A1 WO 2009060585A1 JP 2008003160 W JP2008003160 W JP 2008003160W WO 2009060585 A1 WO2009060585 A1 WO 2009060585A1
Authority
WO
WIPO (PCT)
Prior art keywords
state
region
exposure
axis direction
wafer stages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/003160
Other languages
English (en)
French (fr)
Inventor
Yuichi Shibazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to HK10104656.5A priority Critical patent/HK1137077B/xx
Priority to CN200880011784.0A priority patent/CN101675500B/zh
Priority to JP2009539947A priority patent/JP4986185B2/ja
Publication of WO2009060585A1 publication Critical patent/WO2009060585A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • H10P76/2041

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

 液浸領域(14)が形成される投影光学系(PL)の下方の領域に、一方のウエハステージ(WST1)が位置する状態から他方のウエハステージ(WST2)が位置する状態に移行させる際に、両ウエハステージ(WST2,WST1)を、それぞれに設けられた庇部(23a’)と段部(23b)とを係合させて、X軸方向に関してずれた状態で、Y軸方向に近接又は接触させ、その状態を維持してY軸方向に同時に駆動する。これにより、液浸領域が、庇部を介して2つのウエハステージ間で受け渡し、液浸領域を形成する液体の漏れを抑制する。
PCT/JP2008/003160 2007-11-07 2008-11-04 露光装置及び露光方法、並びにデバイス製造方法 Ceased WO2009060585A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
HK10104656.5A HK1137077B (en) 2007-11-07 2008-11-04 Exposure apparatus, exposure method and device manufacturing method
CN200880011784.0A CN101675500B (zh) 2007-11-07 2008-11-04 曝光装置、曝光方法以及元件制造方法
JP2009539947A JP4986185B2 (ja) 2007-11-07 2008-11-04 露光装置及び露光方法、並びにデバイス製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-289203 2007-11-07
JP2007289203 2007-11-07

Publications (1)

Publication Number Publication Date
WO2009060585A1 true WO2009060585A1 (ja) 2009-05-14

Family

ID=40625493

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003160 Ceased WO2009060585A1 (ja) 2007-11-07 2008-11-04 露光装置及び露光方法、並びにデバイス製造方法

Country Status (6)

Country Link
US (1) US8797508B2 (ja)
JP (1) JP4986185B2 (ja)
KR (1) KR101470671B1 (ja)
CN (1) CN101675500B (ja)
TW (1) TWI435183B (ja)
WO (1) WO2009060585A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061199A (ja) * 2009-09-11 2011-03-24 Asml Netherlands Bv シャッター部材、リソグラフィ装置及びデバイス製造方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8902402B2 (en) * 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8599359B2 (en) 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8760629B2 (en) * 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8488109B2 (en) 2009-08-25 2013-07-16 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US20110096312A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110096318A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110102761A1 (en) * 2009-09-28 2011-05-05 Nikon Corporation Stage apparatus, exposure apparatus, and device fabricating method
US20110096306A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110128523A1 (en) * 2009-11-19 2011-06-02 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110123913A1 (en) * 2009-11-19 2011-05-26 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
US8488106B2 (en) * 2009-12-28 2013-07-16 Nikon Corporation Movable body drive method, movable body apparatus, exposure method, exposure apparatus, and device manufacturing method
US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
US8779635B2 (en) * 2012-04-10 2014-07-15 Kla-Tencor Corporation Arrangement of reticle positioning device for actinic inspection of EUV reticles
JP6362312B2 (ja) * 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
TWI768409B (zh) * 2015-02-23 2022-06-21 日商尼康股份有限公司 基板處理系統及基板處理方法、以及元件製造方法
JP6691693B2 (ja) 2015-02-23 2020-05-13 株式会社ニコン 計測装置、リソグラフィシステム及び露光装置、並びに重ね合わせ計測方法及びデバイス製造方法
CN112068406A (zh) 2015-02-23 2020-12-11 株式会社尼康 测量装置、光刻系统、以及组件制造方法
KR20240058311A (ko) * 2022-10-26 2024-05-03 삼성전자주식회사 기판 처리 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332656A (ja) * 2005-05-24 2006-12-07 Asml Netherlands Bv 2ステージ・リソグラフィ装置及びデバイス製造方法
WO2007018127A1 (ja) * 2005-08-05 2007-02-15 Nikon Corporation ステージ装置及び露光装置
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007281308A (ja) * 2006-04-10 2007-10-25 Canon Inc 液浸露光装置
JP2008130745A (ja) * 2006-11-20 2008-06-05 Canon Inc 液浸露光装置

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780617A (en) * 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU1262499A (en) * 1998-03-11 1999-09-27 Nikon Corporation Ultraviolet laser apparatus and exposure apparatus comprising the ultraviolet laser apparatus
KR20010085493A (ko) * 2000-02-25 2001-09-07 시마무라 기로 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법
US6611316B2 (en) * 2001-02-27 2003-08-26 Asml Holding N.V. Method and system for dual reticle image exposure
JP2002280283A (ja) * 2001-03-16 2002-09-27 Canon Inc 基板処理装置
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US6879377B2 (en) * 2001-11-30 2005-04-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1532489A2 (en) * 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG2010050110A (en) * 2002-11-12 2014-06-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2466624B1 (en) * 2003-02-26 2015-04-22 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101533206B1 (ko) 2003-04-11 2015-07-01 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
JP4437474B2 (ja) * 2003-06-19 2010-03-24 株式会社ニコン 露光装置及びデバイス製造方法
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
WO2005059617A2 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP2005317916A (ja) * 2004-03-30 2005-11-10 Canon Inc 露光装置及びデバイス製造方法
JP4488006B2 (ja) 2004-10-15 2010-06-23 株式会社ニコン 露光装置及びデバイス製造方法
US20060092399A1 (en) * 2004-10-29 2006-05-04 Asml Netherlands B.V. Lithographic apparatus, a control system for controlling a lithographic apparatus, and a device manufacturing method
US7161659B2 (en) * 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7515281B2 (en) * 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101346581B1 (ko) * 2006-02-21 2014-01-02 가부시키가이샤 니콘 패턴 형성 장치 및 패턴 형성 방법, 이동체 구동 시스템 및이동체 구동 방법, 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
KR20130057496A (ko) 2006-02-21 2013-05-31 가부시키가이샤 니콘 패턴 형성 장치, 마크 검출 장치, 노광 장치, 패턴 형성 방법, 노광 방법 및 디바이스 제조 방법
US7310132B2 (en) * 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7483120B2 (en) * 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
KR101413891B1 (ko) * 2006-09-29 2014-06-30 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
JP2008124219A (ja) 2006-11-10 2008-05-29 Canon Inc 液浸露光装置
JP2008124194A (ja) * 2006-11-10 2008-05-29 Canon Inc 液浸露光方法および液浸露光装置
US20080158531A1 (en) * 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8040490B2 (en) * 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
JP2009218564A (ja) * 2008-02-12 2009-09-24 Canon Inc 露光装置及びデバイス製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332656A (ja) * 2005-05-24 2006-12-07 Asml Netherlands Bv 2ステージ・リソグラフィ装置及びデバイス製造方法
WO2007018127A1 (ja) * 2005-08-05 2007-02-15 Nikon Corporation ステージ装置及び露光装置
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007281308A (ja) * 2006-04-10 2007-10-25 Canon Inc 液浸露光装置
JP2008130745A (ja) * 2006-11-20 2008-06-05 Canon Inc 液浸露光装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061199A (ja) * 2009-09-11 2011-03-24 Asml Netherlands Bv シャッター部材、リソグラフィ装置及びデバイス製造方法
US8599356B2 (en) 2009-09-11 2013-12-03 Asml Netherlands B.V. Shutter member, a lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
KR101470671B1 (ko) 2014-12-08
JP4986185B2 (ja) 2012-07-25
CN101675500B (zh) 2011-05-18
US8797508B2 (en) 2014-08-05
CN101675500A (zh) 2010-03-17
US20090225288A1 (en) 2009-09-10
TW200935184A (en) 2009-08-16
JPWO2009060585A1 (ja) 2011-03-17
HK1137077A1 (en) 2010-07-16
TWI435183B (zh) 2014-04-21
KR20100085833A (ko) 2010-07-29

Similar Documents

Publication Publication Date Title
WO2009060585A1 (ja) 露光装置及び露光方法、並びにデバイス製造方法
EP2284866A3 (en) Exposure apparatus, exposure method and device manufacturing method
WO2005111722A3 (en) Apparatus and method for providing fluid for immersion lithography
WO2004068542A3 (en) Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof
TW201203318A (en) Exposure method, exposure device, and device manufacturing method
EP1724815A4 (en) ALIGNMENT DEVICE, COMPONENT MANUFACTURING METHOD, MAINTENANCE METHOD AND ALIGNMENT PROCESS
TW200508806A (en) Polyamide acid-containing composition for forming anti-reflective film
PH12013500600B1 (en) Polarizing photochromic devices and methods of making the same
ATE476677T1 (en) Method for manufacturing multilayer cholesteric liquid crystal optical bodies
TW200741818A (en) Exposure apparatus and device manufacturing method
EP1783822A4 (en) EXPOSURE DEVICE, EXPOSURE DEVICE ELEMENT CLEANING METHOD, EXPOSURE DEVICE SERVICING METHOD, MAINTENANCE DEVICE AND EQUIPMENT MANUFACTURING METHOD
DE602004020634D1 (de) Belichtungsverfahren
EP1801850A4 (en) SUBSTRATE AND HOLDING DEVICE, EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD
WO2009104899A3 (en) Method of etching asymmetric wafer, solar cell including the asymmetrically etched wafer, and method of manufacturing the same
WO2005024520A3 (en) Phototool coating
WO2004011984A3 (en) Retainer, exposure apparatus, and semiconductor device fabrication method
WO2008133234A1 (ja) 光学素子保持装置、鏡筒及び露光装置ならびにデバイスの製造方法
WO2005009632A3 (en) Methods for forming tunable molecular gradients on substrates
WO2011049326A3 (en) Patterned retardation film and method for manufacturing the same
SG170060A1 (en) Exposure apparatus, exposure method, and device production method
WO2006003373A3 (en) Immersion photolithography system
GR1006447B (el) Μεθοδος συγκολλησης
TW200619866A (en) Aligner, exposing method, and device manufacturing method
WO2006084641A3 (en) Immersion liquid, exposure apparatus, and exposure process
TW200717039A (en) Reflector, optical element, interferometer system, stage device, exposure apparatus, and device fabricating method

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880011784.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08847013

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20097025768

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2009539947

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08847013

Country of ref document: EP

Kind code of ref document: A1