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WO2009041434A1 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
WO2009041434A1
WO2009041434A1 PCT/JP2008/067187 JP2008067187W WO2009041434A1 WO 2009041434 A1 WO2009041434 A1 WO 2009041434A1 JP 2008067187 W JP2008067187 W JP 2008067187W WO 2009041434 A1 WO2009041434 A1 WO 2009041434A1
Authority
WO
WIPO (PCT)
Prior art keywords
light receiving
receiving section
section
dummy
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067187
Other languages
English (en)
French (fr)
Inventor
Harumichi Mori
Kazuki Fujita
Ryuji Kyushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to EP08833415.6A priority Critical patent/EP2199829B1/en
Priority to US12/679,750 priority patent/US8766203B2/en
Priority to CN2008801086407A priority patent/CN101809462B/zh
Priority to KR1020097027282A priority patent/KR101484345B1/ko
Publication of WO2009041434A1 publication Critical patent/WO2009041434A1/ja
Anticipated expiration legal-status Critical
Priority to US14/285,095 priority patent/US20140252241A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

固体撮像装置１は、受光部１０、信号読出部２０、制御部３０、ダミー用フォトダイオードを含むダミー用受光部１１，１２、ダミー用フォトダイオードの接合容量部を放電する放電手段、および、受光部１０を覆うように設けられたシンチレータ層５０を備える。ダミー用受光部１１は、受光部１０の第１行（受光部１０の上辺側）に隣接して配置されていて、左右方向に受光部１０と同程度の長さを有している。ダミー用受光部１２は、受光部１０の第Ｍ行（受光部１０の下辺側）に隣接して配置されていて、左右方向に受光部１０と同程度の長さを有している。
PCT/JP2008/067187 2007-09-25 2008-09-24 固体撮像装置 Ceased WO2009041434A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08833415.6A EP2199829B1 (en) 2007-09-25 2008-09-24 Solid-state imaging device
US12/679,750 US8766203B2 (en) 2007-09-25 2008-09-24 Solid state imaging device
CN2008801086407A CN101809462B (zh) 2007-09-25 2008-09-24 固体摄像装置
KR1020097027282A KR101484345B1 (ko) 2007-09-25 2008-09-24 고체 촬상 장치
US14/285,095 US20140252241A1 (en) 2007-09-25 2014-05-22 Solid state imaging device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-247645 2007-09-25
JP2007247645A JP4719201B2 (ja) 2007-09-25 2007-09-25 固体撮像装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/679,750 A-371-Of-International US8766203B2 (en) 2007-09-25 2008-09-24 Solid state imaging device
US14/285,095 Continuation US20140252241A1 (en) 2007-09-25 2014-05-22 Solid state imaging device

Publications (1)

Publication Number Publication Date
WO2009041434A1 true WO2009041434A1 (ja) 2009-04-02

Family

ID=40511317

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067187 Ceased WO2009041434A1 (ja) 2007-09-25 2008-09-24 固体撮像装置

Country Status (7)

Country Link
US (2) US8766203B2 (ja)
EP (1) EP2199829B1 (ja)
JP (1) JP4719201B2 (ja)
KR (1) KR101484345B1 (ja)
CN (2) CN101809462B (ja)
TW (1) TWI474031B (ja)
WO (1) WO2009041434A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5325750B2 (ja) * 2009-11-19 2013-10-23 富士フイルム株式会社 固体撮像素子、撮像装置
JP6174849B2 (ja) * 2012-08-10 2017-08-02 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
JP5635583B2 (ja) * 2012-12-10 2014-12-03 有限会社Ｒｐｇテクニクス γ線測定装置
JP6184761B2 (ja) * 2013-06-11 2017-08-23 浜松ホトニクス株式会社 固体撮像装置
JP5886793B2 (ja) 2013-06-11 2016-03-16 浜松ホトニクス株式会社 固体撮像装置
JP6185098B2 (ja) * 2016-02-12 2017-08-23 浜松ホトニクス株式会社 固体撮像装置
EP3282234A1 (en) 2016-08-09 2018-02-14 ams International AG Optical sensor arrangement and method for optical sensing
KR102493317B1 (ko) * 2017-12-21 2023-01-27 엘지디스플레이 주식회사 엑스레이 영상감지소자
JP2022012182A (ja) * 2020-07-01 2022-01-17 キヤノン電子管デバイス株式会社 放射線検出器
JP2023117956A (ja) * 2022-02-14 2023-08-24 キヤノン株式会社 センサ基板、放射線撮像装置、放射線撮像システム、および、センサ基板の製造方法
US20240007763A1 (en) * 2022-06-30 2024-01-04 Varex Imaging Corporation Imaging system with emi correction

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2001042042A (ja) * 1999-07-27 2001-02-16 Canon Inc 撮像装置
JP2003133575A (ja) * 2001-10-22 2003-05-09 Shimadzu Corp 放射線検出装置
JP2006064525A (ja) * 2004-08-26 2006-03-09 Hamamatsu Photonics Kk 光検出装置

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JPH05283669A (ja) * 1992-03-31 1993-10-29 Toshiba Corp 固体撮像装置及びその製造方法
JP3477039B2 (ja) * 1997-08-06 2003-12-10 株式会社東芝 固体撮像装置及びその製造方法
JP3531908B2 (ja) * 1999-02-17 2004-05-31 キヤノン株式会社 撮像装置、放射線検出装置および画像処理システム
JP4447752B2 (ja) * 2000-08-03 2010-04-07 浜松ホトニクス株式会社 放射線検出器
JP4280024B2 (ja) * 2001-04-23 2009-06-17 株式会社東芝 Ｘ線平面検出器
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JP2004037382A (ja) * 2002-07-05 2004-02-05 Toshiba Corp 放射線検出器及び放射線診断装置
JP2004134514A (ja) * 2002-10-09 2004-04-30 Canon Inc 裏面入射型撮像センサ
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JP2004177217A (ja) 2002-11-26 2004-06-24 Hamamatsu Photonics Kk 放射線撮像装置
JP4217505B2 (ja) * 2003-02-28 2009-02-04 キヤノン株式会社 撮像装置及びｘ線撮像装置
JP4262020B2 (ja) * 2003-07-11 2009-05-13 浜松ホトニクス株式会社 光検出装置
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JP2001042042A (ja) * 1999-07-27 2001-02-16 Canon Inc 撮像装置
JP2003133575A (ja) * 2001-10-22 2003-05-09 Shimadzu Corp 放射線検出装置
JP2006064525A (ja) * 2004-08-26 2006-03-09 Hamamatsu Photonics Kk 光検出装置

Non-Patent Citations (1)

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Title
See also references of EP2199829A4 *

Also Published As

Publication number Publication date
JP4719201B2 (ja) 2011-07-06
CN101809462A (zh) 2010-08-18
US8766203B2 (en) 2014-07-01
CN101809462B (zh) 2013-02-13
EP2199829A4 (en) 2015-05-06
CN103037177B (zh) 2016-07-13
US20100193692A1 (en) 2010-08-05
TW200931055A (en) 2009-07-16
CN103037177A (zh) 2013-04-10
EP2199829B1 (en) 2016-07-20
KR20100057536A (ko) 2010-05-31
KR101484345B1 (ko) 2015-01-19
TWI474031B (zh) 2015-02-21
EP2199829A1 (en) 2010-06-23
US20140252241A1 (en) 2014-09-11
JP2009079923A (ja) 2009-04-16

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