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WO2009041388A1 - Ebauche de masque et masque de transfert - Google Patents

Ebauche de masque et masque de transfert Download PDF

Info

Publication number
WO2009041388A1
WO2009041388A1 PCT/JP2008/067098 JP2008067098W WO2009041388A1 WO 2009041388 A1 WO2009041388 A1 WO 2009041388A1 JP 2008067098 W JP2008067098 W JP 2008067098W WO 2009041388 A1 WO2009041388 A1 WO 2009041388A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
transferring
less
blank
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067098
Other languages
English (en)
Japanese (ja)
Inventor
Masahiro Hashimoto
Masaru Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of WO2009041388A1 publication Critical patent/WO2009041388A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un masque de transfert qui est utilisé lorsqu'un motif fin, ayant un demi pas (hp) DRAM de 45 nm ou plus selon une règle de conception de semi-conducteur, doit être formé grâce à l'utilisation d'une longueur d'onde de lumière d'exposition de 200 nm ou moins. Le masque de transfert comportant un motif de transfert sur un substrat présente une telle couche (ou une couche de réduction de flou) entre le substrat et le motif de transfert qui est faite d'un matériau ayant un intervalle de bande de 6,4 eV ou moins pour la longueur d'onde de lumière d'exposition de 200 nm ou moins.
PCT/JP2008/067098 2007-09-28 2008-09-22 Ebauche de masque et masque de transfert Ceased WO2009041388A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-253250 2007-09-28
JP2007253250A JP2009086094A (ja) 2007-09-28 2007-09-28 マスクブランク及び転写用マスク

Publications (1)

Publication Number Publication Date
WO2009041388A1 true WO2009041388A1 (fr) 2009-04-02

Family

ID=40511273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067098 Ceased WO2009041388A1 (fr) 2007-09-28 2008-09-22 Ebauche de masque et masque de transfert

Country Status (3)

Country Link
JP (1) JP2009086094A (fr)
TW (1) TW200921267A (fr)
WO (1) WO2009041388A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010008604A (ja) * 2008-06-25 2010-01-14 Hoya Corp マスクブランク及び転写用マスク
US8968970B2 (en) 2009-10-09 2015-03-03 Samsung Electronics Co., Ltd. Phase shift masks and methods of forming phase shift masks
KR101663173B1 (ko) 2009-10-09 2016-10-07 삼성전자주식회사 알카리 세정에 내성을 갖는 위상 반전 마스크 및 위상 반전 마스크의 제조 방법
JP5602412B2 (ja) * 2009-10-27 2014-10-08 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクセットおよび半導体デバイスの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10112429A (ja) * 1996-10-07 1998-04-28 Nippon Telegr & Teleph Corp <Ntt> 光露光システム
JPH10125583A (ja) * 1996-10-24 1998-05-15 Nippon Telegr & Teleph Corp <Ntt> Ｘ線マスク
JP2000284468A (ja) * 1999-03-31 2000-10-13 Canon Inc マスク構造体、該マスク構造体を用いた露光方法および露光装置、該マスク構造体を用いて作製された半導体デバイス、ならびに半導体デバイス製造方法
JP2003243292A (ja) * 2002-02-18 2003-08-29 Nikon Corp 反射マスク、露光装置及びその清掃方法
JP2007184361A (ja) * 2006-01-05 2007-07-19 Asahi Glass Co Ltd 薄膜デバイス用ガラス基板およびその成膜方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591244Y2 (ja) * 1992-11-30 1999-03-03 京セラ株式会社 フォトマスク
JPH0784357A (ja) * 1993-09-14 1995-03-31 Nikon Corp 露光マスクおよび投影露光方法
JP4201162B2 (ja) * 2001-03-29 2008-12-24 大日本印刷株式会社 パターン形成体の製造方法およびそれに用いるフォトマスク
JP2005175324A (ja) * 2003-12-12 2005-06-30 Nikon Corp マスク汚染防止方法、マスク汚染防止装置及び露光装置
JP2005186005A (ja) * 2003-12-26 2005-07-14 Dainippon Printing Co Ltd 光触媒含有層基板およびパターン形成体の製造方法
JP4635509B2 (ja) * 2004-08-03 2011-02-23 凸版印刷株式会社 フォトマスクの製造方法
JP4601459B2 (ja) * 2005-03-01 2010-12-22 大日本印刷株式会社 露光用マスクおよびその製造方法
JP2008197234A (ja) * 2007-02-09 2008-08-28 Nsk Ltd 近接露光用フォトマスク、露光方法及び露光装置
JP2008286838A (ja) * 2007-05-15 2008-11-27 Canon Inc 露光用マスク、パターン形成装置及びパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10112429A (ja) * 1996-10-07 1998-04-28 Nippon Telegr & Teleph Corp <Ntt> 光露光システム
JPH10125583A (ja) * 1996-10-24 1998-05-15 Nippon Telegr & Teleph Corp <Ntt> Ｘ線マスク
JP2000284468A (ja) * 1999-03-31 2000-10-13 Canon Inc マスク構造体、該マスク構造体を用いた露光方法および露光装置、該マスク構造体を用いて作製された半導体デバイス、ならびに半導体デバイス製造方法
JP2003243292A (ja) * 2002-02-18 2003-08-29 Nikon Corp 反射マスク、露光装置及びその清掃方法
JP2007184361A (ja) * 2006-01-05 2007-07-19 Asahi Glass Co Ltd 薄膜デバイス用ガラス基板およびその成膜方法

Also Published As

Publication number Publication date
JP2009086094A (ja) 2009-04-23
TW200921267A (en) 2009-05-16

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