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WO2009041283A1 - ガス供給装置 - Google Patents

ガス供給装置 Download PDF

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Publication number
WO2009041283A1
WO2009041283A1 PCT/JP2008/066457 JP2008066457W WO2009041283A1 WO 2009041283 A1 WO2009041283 A1 WO 2009041283A1 JP 2008066457 W JP2008066457 W JP 2008066457W WO 2009041283 A1 WO2009041283 A1 WO 2009041283A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas supplying
gas
processing
ports
supplying apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066457
Other languages
English (en)
French (fr)
Inventor
Einosuke Tsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2009041283A1 publication Critical patent/WO2009041283A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　処理ガスを導入する複数の導入ポート５１ａ，５２ａ，５３ａ，５４ａと、処理ガスを案内するガス流路５１１，５１２，５２１，５２２，５３１，５３２と、を有するガス供給装置本体４ａと、処理容器２内の載置台３に載置された基板Ｗに対向して配置され、処理ガスを基板Ｗに供給する複数のガス供給孔５１ｂ，５２ｂ，５３ｂを有するガス供給プレート４４，４５と、を備えている。ガス供給プレート４４，４５は、複数のガス供給孔５１ｂ，５２ｂ，５３ｂを含み、互いに異なる複数の処理ガスを供給する第１のガス供給プレート４５と、複数のガス供給孔を含む第２のガス供給プレート４４と、を有している。第１のガス供給プレート４５は、ガス供給装置本体に対して着脱自在に設けられている。
PCT/JP2008/066457 2007-09-28 2008-09-11 ガス供給装置 Ceased WO2009041283A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-255808 2007-09-28
JP2007255808A JP5444599B2 (ja) 2007-09-28 2007-09-28 ガス供給装置及び成膜装置

Publications (1)

Publication Number Publication Date
WO2009041283A1 true WO2009041283A1 (ja) 2009-04-02

Family

ID=40511172

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066457 Ceased WO2009041283A1 (ja) 2007-09-28 2008-09-11 ガス供給装置

Country Status (3)

Country Link
JP (1) JP5444599B2 (ja)
TW (1) TW200932945A (ja)
WO (1) WO2009041283A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020167380A (ja) * 2019-03-28 2020-10-08 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置
CN114351116A (zh) * 2020-10-13 2022-04-15 中国科学院微电子研究所 原子层沉积装置及原子层沉积方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5445252B2 (ja) * 2010-03-16 2014-03-19 東京エレクトロン株式会社 成膜装置
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
JP6013077B2 (ja) * 2012-08-13 2016-10-25 株式会社カネカ 真空蒸着装置及び有機ｅｌ装置の製造方法
CN104810238A (zh) * 2014-01-23 2015-07-29 北京北方微电子基地设备工艺研究中心有限责任公司 匀气结构及等离子体系统
JP2016036018A (ja) * 2014-07-31 2016-03-17 東京エレクトロン株式会社 プラズマ処理装置及びガス供給部材
US10829855B2 (en) 2016-05-20 2020-11-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
JP6352993B2 (ja) * 2016-08-10 2018-07-04 株式会社東芝 流路構造及び処理装置
JP6723116B2 (ja) * 2016-08-31 2020-07-15 株式会社日本製鋼所 原子層成長装置および原子層成長方法
JP6665760B2 (ja) * 2016-11-16 2020-03-13 日本電気硝子株式会社 ガラス基板の製造装置及び製造方法
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
JP7546483B2 (ja) * 2017-12-08 2024-09-06 ラム リサーチ コーポレーション 遠隔プラズマ膜蒸着を可能にするためにラジカルおよび前駆体ガスを下流チャンバに供給するための改良された孔パターンを備える統合シャワーヘッド
US11149350B2 (en) 2018-01-10 2021-10-19 Asm Ip Holding B.V. Shower plate structure for supplying carrier and dry gas
US12087573B2 (en) 2019-07-17 2024-09-10 Lam Research Corporation Modulation of oxidation profile for substrate processing
WO2021091948A1 (en) * 2019-11-08 2021-05-14 Applied Materials, Inc. Chamber components for gas delivery modulation
US20220028710A1 (en) * 2020-07-21 2022-01-27 Applied Materials, Inc. Distribution components for semiconductor processing systems
CN117684152A (zh) * 2022-09-05 2024-03-12 中微半导体设备(上海)股份有限公司 一种气体供给装置及成膜装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10121253A (ja) * 1996-07-24 1998-05-12 Applied Materials Inc 処理チャンバ内の複数領域ガス流コントロール
JP2003309075A (ja) * 2002-04-18 2003-10-31 Mitsubishi Electric Corp 半導体製造装置および半導体装置の製造方法
JP2005048208A (ja) * 2003-07-30 2005-02-24 Hitachi Kokusai Electric Inc 基板処理装置
JP2005236124A (ja) * 2004-02-20 2005-09-02 Asm Japan Kk シャワープレート及びプラズマ処理装置
JP2006120853A (ja) * 2004-10-21 2006-05-11 Matsushita Electric Ind Co Ltd 基板処理装置および基板処理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100331544B1 (ko) * 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10121253A (ja) * 1996-07-24 1998-05-12 Applied Materials Inc 処理チャンバ内の複数領域ガス流コントロール
JP2003309075A (ja) * 2002-04-18 2003-10-31 Mitsubishi Electric Corp 半導体製造装置および半導体装置の製造方法
JP2005048208A (ja) * 2003-07-30 2005-02-24 Hitachi Kokusai Electric Inc 基板処理装置
JP2005236124A (ja) * 2004-02-20 2005-09-02 Asm Japan Kk シャワープレート及びプラズマ処理装置
JP2006120853A (ja) * 2004-10-21 2006-05-11 Matsushita Electric Ind Co Ltd 基板処理装置および基板処理方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020167380A (ja) * 2019-03-28 2020-10-08 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置
CN111755313A (zh) * 2019-03-28 2020-10-09 Asm Ip私人控股有限公司 基板处理设备
JP7502039B2 (ja) 2019-03-28 2024-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置
CN111755313B (zh) * 2019-03-28 2025-01-14 Asmip私人控股有限公司 基板处理设备
CN114351116A (zh) * 2020-10-13 2022-04-15 中国科学院微电子研究所 原子层沉积装置及原子层沉积方法

Also Published As

Publication number Publication date
TW200932945A (en) 2009-08-01
JP5444599B2 (ja) 2014-03-19
JP2009088232A (ja) 2009-04-23

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