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WO2008139904A1 - Photomask blank and photomask - Google Patents

Photomask blank and photomask Download PDF

Info

Publication number
WO2008139904A1
WO2008139904A1 PCT/JP2008/058129 JP2008058129W WO2008139904A1 WO 2008139904 A1 WO2008139904 A1 WO 2008139904A1 JP 2008058129 W JP2008058129 W JP 2008058129W WO 2008139904 A1 WO2008139904 A1 WO 2008139904A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
photomask
photomask blank
thickness
blank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058129
Other languages
French (fr)
Japanese (ja)
Inventor
Toshiyuki Suzuki
Atsushi Kominato
Yasushi Okubo
Osamu Nozawa
Morio Hosoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2009514089A priority Critical patent/JP5054766B2/en
Priority to TW097115531A priority patent/TW200905375A/en
Publication of WO2008139904A1 publication Critical patent/WO2008139904A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • H10P76/2043—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

Disclosed are a photomask blank and a photomask, which are suitable for a exposure method using ArF excimer laser. Specifically disclosed is a photomask blank comprising a light-shielding film on a transparent substrate, which is a material for a photomask to be exposed to an exposure light having a wavelength of 200 nm or less. This photomask blank is characterized in that the light-shielding film comprises a light-blocking film mainly containing silicon and a transition metal and having a refractive index n1 of 1.0-1.7, an extinction coefficient k1 of 2.5-3.5, and a thickness t1 of 20-50 nm; a front antireflection film formed on the upper surface of the light-blocking film; and a rear antireflection film formed on the lower surface of the light-blocking film, which contains silicon, a transition metal, oxygen and nitrogen, while having a refractive index n2 of 1.0-3.5, an extinction coefficient k2 of not more than 2.5, and a thickness t2 of 5-40 nm. This photomask blank is further characterized in that the following relations: n1 < n2 or k1 > k2, and t1 > t2 are both satisfied, and the total thickness of the light-shielding film is not more than 62 nm.
PCT/JP2008/058129 2007-04-27 2008-04-25 Photomask blank and photomask Ceased WO2008139904A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009514089A JP5054766B2 (en) 2007-04-27 2008-04-25 Photomask blank and photomask
TW097115531A TW200905375A (en) 2007-04-27 2008-04-28 Photomask blank and photomask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-120318 2007-04-27
JP2007120318 2007-04-27

Publications (1)

Publication Number Publication Date
WO2008139904A1 true WO2008139904A1 (en) 2008-11-20

Family

ID=40002120

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058129 Ceased WO2008139904A1 (en) 2007-04-27 2008-04-25 Photomask blank and photomask

Country Status (4)

Country Link
JP (1) JP5054766B2 (en)
KR (1) KR20100009558A (en)
TW (1) TW200905375A (en)
WO (1) WO2008139904A1 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010119811A1 (en) * 2009-04-16 2010-10-21 Hoya株式会社 Mask blank, transfer mask, and film density evaluation method
JP2010267836A (en) * 2009-05-15 2010-11-25 Shin-Etsu Chemical Co Ltd Etching method and photomask blank processing method
CN101950125A (en) * 2009-06-11 2011-01-19 信越化学工业株式会社 Method of manufacturing a photomask
JP2011059502A (en) * 2009-09-11 2011-03-24 Hoya Corp Photomask blank and manufacturing method of photomask
WO2011046075A1 (en) * 2009-10-12 2011-04-21 Hoya株式会社 Method for producing transfer mask and method for manufacturing semiconductor device
JP2011081356A (en) * 2009-08-25 2011-04-21 Hoya Corp Mask blank, transfer mask, and method of manufacturing the same
WO2011046073A1 (en) * 2009-10-12 2011-04-21 Hoya株式会社 Transfer mask, method for producing transfer mask, and method for manufacturing semiconductor device
EP2418542A2 (en) 2010-08-04 2012-02-15 Shin-Etsu Chemical Co., Ltd. Binary photomask blank and binary photomask making method
JP2013065036A (en) * 2012-12-05 2013-04-11 Hoya Corp Method for manufacturing semiconductor device
JP2013537318A (en) * 2010-09-14 2013-09-30 エーエスエムエル ネザーランズ ビー．ブイ． Correction of flare effects in lithography systems
JP2013231998A (en) * 2008-03-31 2013-11-14 Hoya Corp Photomask blank, photomask, and method of manufacturing photomask blank
JP2014059575A (en) * 2009-03-31 2014-04-03 Hoya Corp Mask blank and transfer mask
JP2015007788A (en) * 2014-08-06 2015-01-15 Hoya株式会社 Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method
JP2015167199A (en) * 2014-03-04 2015-09-24 Hoya株式会社 Imprint mold blank and imprint mold
KR20170031617A (en) 2015-09-11 2017-03-21 아사히 가라스 가부시키가이샤 Mask blank
CN110603489A (en) * 2017-03-16 2019-12-20 Hoya株式会社 Mask blank, transfer mask, and method for manufacturing semiconductor device
CN113311660A (en) * 2021-06-03 2021-08-27 上海传芯半导体有限公司 Mask base plate manufacturing method and gluing equipment with plasma heating device
TWI758694B (en) * 2017-03-24 2022-03-21 日商Ｈｏｙａ股份有限公司 Method of manufacturing a photomask for use in manufacturing a display device and method of manufacturing a display device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015125628A (en) * 2013-12-26 2015-07-06 大日本印刷株式会社 Film sensor, display device with touch position detection function, and laminate for manufacturing film sensor
KR20240046289A (en) * 2018-03-15 2024-04-08 다이니폰 인사츠 가부시키가이샤 Large-Sized Photomask
JP6938428B2 (en) 2018-05-30 2021-09-22 Hoya株式会社 Manufacturing method of mask blank, phase shift mask and semiconductor device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095437A (en) * 1983-10-28 1985-05-28 Hoya Corp Photomask blank
JPH04246649A (en) * 1991-01-31 1992-09-02 Hoya Corp Photomask blank, production thereof, photomask and production thereof
JPH06102656A (en) * 1992-09-24 1994-04-15 Mitsubishi Electric Corp Photomask formation method
JPH11125896A (en) * 1997-08-19 1999-05-11 Toppan Printing Co Ltd Photomask blanks and photomasks
WO2000007072A1 (en) * 1998-07-31 2000-02-10 Hoya Corporation Photomask blank, photomask, methods of manufacturing the same, and method of forming micropattern
JP2005128278A (en) * 2003-10-24 2005-05-19 Shin Etsu Chem Co Ltd Phase shift mask blank, phase shift mask and pattern transfer method
JP2006078807A (en) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd Photomask blank and photomask
JP2007241060A (en) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd Photomask blank and photomask manufacturing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001100393A (en) * 1999-09-28 2001-04-13 Toshiba Corp Photomask
JP3359620B2 (en) * 2000-09-01 2002-12-24 株式会社半導体先端テクノロジーズ Photomask manufacturing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095437A (en) * 1983-10-28 1985-05-28 Hoya Corp Photomask blank
JPH04246649A (en) * 1991-01-31 1992-09-02 Hoya Corp Photomask blank, production thereof, photomask and production thereof
JPH06102656A (en) * 1992-09-24 1994-04-15 Mitsubishi Electric Corp Photomask formation method
JPH11125896A (en) * 1997-08-19 1999-05-11 Toppan Printing Co Ltd Photomask blanks and photomasks
WO2000007072A1 (en) * 1998-07-31 2000-02-10 Hoya Corporation Photomask blank, photomask, methods of manufacturing the same, and method of forming micropattern
JP2005128278A (en) * 2003-10-24 2005-05-19 Shin Etsu Chem Co Ltd Phase shift mask blank, phase shift mask and pattern transfer method
JP2006078807A (en) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd Photomask blank and photomask
JP2007241060A (en) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd Photomask blank and photomask manufacturing method

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013231998A (en) * 2008-03-31 2013-11-14 Hoya Corp Photomask blank, photomask, and method of manufacturing photomask blank
US9075314B2 (en) 2008-03-31 2015-07-07 Hoya Corporation Photomask blank, photomask, and method for manufacturing photomask blank
JP2014059575A (en) * 2009-03-31 2014-04-03 Hoya Corp Mask blank and transfer mask
WO2010119811A1 (en) * 2009-04-16 2010-10-21 Hoya株式会社 Mask blank, transfer mask, and film density evaluation method
JPWO2010119811A1 (en) * 2009-04-16 2012-10-22 Hoya株式会社 Mask blank, transfer mask, and film density evaluation method
US8709681B2 (en) 2009-04-16 2014-04-29 Hoya Corporation Mask blank, transfer mask, and film denseness evaluation method
CN101968605B (en) * 2009-05-15 2014-03-26 信越化学工业株式会社 Etching method and photomask blank processing method
JP2010267836A (en) * 2009-05-15 2010-11-25 Shin-Etsu Chemical Co Ltd Etching method and photomask blank processing method
CN101968605A (en) * 2009-05-15 2011-02-09 信越化学工业株式会社 Etching method and photomask blank processing method
US8920666B2 (en) 2009-05-15 2014-12-30 Shin-Etsu Chemical Co., Ltd. Etching method and photomask blank processing method
CN101950125B (en) * 2009-06-11 2013-09-04 信越化学工业株式会社 Method of manufacturing a photomask
CN101950125A (en) * 2009-06-11 2011-01-19 信越化学工业株式会社 Method of manufacturing a photomask
US8309277B2 (en) 2009-06-11 2012-11-13 Shin-Etsu Chemical Co., Ltd. Photomask making method
EP2261736A3 (en) * 2009-06-11 2012-10-17 Shin-Etsu Chemical Co., Ltd. Method of manufacturing a photomask
JP2011081356A (en) * 2009-08-25 2011-04-21 Hoya Corp Mask blank, transfer mask, and method of manufacturing the same
JP2011059502A (en) * 2009-09-11 2011-03-24 Hoya Corp Photomask blank and manufacturing method of photomask
WO2011046073A1 (en) * 2009-10-12 2011-04-21 Hoya株式会社 Transfer mask, method for producing transfer mask, and method for manufacturing semiconductor device
US8197993B2 (en) 2009-10-12 2012-06-12 Hoya Corporation Method of manufacturing transfer mask and method of manufacturing semiconductor device
JP2011209762A (en) * 2009-10-12 2011-10-20 Hoya Corp Transfer mask and method for manufacturing semiconductor device
US8658334B2 (en) 2009-10-12 2014-02-25 Hoya Corporation Transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device
KR101061334B1 (en) 2009-10-12 2011-08-31 호야 가부시키가이샤 Manufacturing Method of Transfer Mask and Manufacturing Method of Semiconductor Device
JP2011102968A (en) * 2009-10-12 2011-05-26 Hoya Corp Transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP2011102969A (en) * 2009-10-12 2011-05-26 Hoya Corp Method for producing transfer mask and method for manufacturing semiconductor device
WO2011046075A1 (en) * 2009-10-12 2011-04-21 Hoya株式会社 Method for producing transfer mask and method for manufacturing semiconductor device
KR20120057496A (en) 2010-08-04 2012-06-05 신에쓰 가가꾸 고교 가부시끼가이샤 Binary photomask blank and binary photomask making method
EP2418542A2 (en) 2010-08-04 2012-02-15 Shin-Etsu Chemical Co., Ltd. Binary photomask blank and binary photomask making method
US8980503B2 (en) 2010-08-04 2015-03-17 Shin-Etsu Chemical Co., Ltd. Binary photomask blank and binary photomask making method
JP2013537318A (en) * 2010-09-14 2013-09-30 エーエスエムエル ネザーランズ ビー．ブイ． Correction of flare effects in lithography systems
US10423745B2 (en) 2010-09-14 2019-09-24 Asml Netherlands B.V. Correction for flare effects in lithography system
JP2013065036A (en) * 2012-12-05 2013-04-11 Hoya Corp Method for manufacturing semiconductor device
JP2015167199A (en) * 2014-03-04 2015-09-24 Hoya株式会社 Imprint mold blank and imprint mold
JP2015007788A (en) * 2014-08-06 2015-01-15 Hoya株式会社 Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method
KR20170031617A (en) 2015-09-11 2017-03-21 아사히 가라스 가부시키가이샤 Mask blank
CN110603489A (en) * 2017-03-16 2019-12-20 Hoya株式会社 Mask blank, transfer mask, and method for manufacturing semiconductor device
TWI758694B (en) * 2017-03-24 2022-03-21 日商Ｈｏｙａ股份有限公司 Method of manufacturing a photomask for use in manufacturing a display device and method of manufacturing a display device
CN113311660A (en) * 2021-06-03 2021-08-27 上海传芯半导体有限公司 Mask base plate manufacturing method and gluing equipment with plasma heating device

Also Published As

Publication number Publication date
JP5054766B2 (en) 2012-10-24
TW200905375A (en) 2009-02-01
KR20100009558A (en) 2010-01-27
JPWO2008139904A1 (en) 2010-07-29

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