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WO2008139735A1 - 表面検査装置および表面検査方法 - Google Patents

表面検査装置および表面検査方法 Download PDF

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Publication number
WO2008139735A1
WO2008139735A1 PCT/JP2008/001194 JP2008001194W WO2008139735A1 WO 2008139735 A1 WO2008139735 A1 WO 2008139735A1 JP 2008001194 W JP2008001194 W JP 2008001194W WO 2008139735 A1 WO2008139735 A1 WO 2008139735A1
Authority
WO
WIPO (PCT)
Prior art keywords
edge part
image
imaging
testing method
tester
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/001194
Other languages
English (en)
French (fr)
Inventor
Naoshi Sakaguchi
Takashi Watanabe
Daisaku Mochida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2009514017A priority Critical patent/JPWO2008139735A1/ja
Publication of WO2008139735A1 publication Critical patent/WO2008139735A1/ja
Priority to US12/588,877 priority patent/US20100053603A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • H10P74/00—
    • H10P74/203—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

　検査対象の基板の傾斜したエッジ部分を前記エッジ部分の法線方向から所定の角度だけずらした方向から照明する照明部と、エッジ部分からの回折光を結像させる結像光学系と、結像光学系によって得られた像を撮像する撮像部と、撮像部によって得られたエッジ部分に対応する画像に線状の像が現れるか否かに基づいて、欠陥の有無を検出する検出手段とを備える。
PCT/JP2008/001194 2007-05-14 2008-05-13 表面検査装置および表面検査方法 Ceased WO2008139735A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009514017A JPWO2008139735A1 (ja) 2007-05-14 2008-05-13 表面検査装置および表面検査方法
US12/588,877 US20100053603A1 (en) 2007-05-14 2009-10-30 Surface inspection apparatus and surface inspection method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007128238 2007-05-14
JP2007-128238 2007-05-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/588,877 Continuation US20100053603A1 (en) 2007-05-14 2009-10-30 Surface inspection apparatus and surface inspection method

Publications (1)

Publication Number Publication Date
WO2008139735A1 true WO2008139735A1 (ja) 2008-11-20

Family

ID=40001960

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001194 Ceased WO2008139735A1 (ja) 2007-05-14 2008-05-13 表面検査装置および表面検査方法

Country Status (5)

Country Link
US (1) US20100053603A1 (ja)
JP (1) JPWO2008139735A1 (ja)
KR (1) KR20100007968A (ja)
TW (1) TW200905186A (ja)
WO (1) WO2008139735A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010133989A3 (en) * 2009-05-22 2011-03-31 Lam Research Corporation Arrangements and methods for improving bevel etch repeatability among substrates
CN109416502A (zh) * 2016-07-12 2019-03-01 西默有限公司 光刻光学器件调节和监测
WO2024252796A1 (ja) * 2023-06-09 2024-12-12 株式会社Sumco 欠陥検出装置、欠陥検出方法、及びプログラム

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4533306B2 (ja) * 2005-12-06 2010-09-01 株式会社日立ハイテクノロジーズ 半導体ウェハ検査方法及び欠陥レビュー装置
JP4408298B2 (ja) 2007-03-28 2010-02-03 株式会社日立ハイテクノロジーズ 検査装置及び検査方法
TWI592652B (zh) 2012-05-09 2017-07-21 希捷科技有限公司 用於表面特徵映射的設備及裝置
US9212900B2 (en) 2012-08-11 2015-12-15 Seagate Technology Llc Surface features characterization
US9297759B2 (en) 2012-10-05 2016-03-29 Seagate Technology Llc Classification of surface features using fluorescence
US9297751B2 (en) 2012-10-05 2016-03-29 Seagate Technology Llc Chemical characterization of surface features
US9377394B2 (en) 2012-10-16 2016-06-28 Seagate Technology Llc Distinguishing foreign surface features from native surface features
US9217714B2 (en) 2012-12-06 2015-12-22 Seagate Technology Llc Reflective surfaces for surface features of an article
US9274064B2 (en) 2013-05-30 2016-03-01 Seagate Technology Llc Surface feature manager
US9513215B2 (en) * 2013-05-30 2016-12-06 Seagate Technology Llc Surface features by azimuthal angle
US9217715B2 (en) * 2013-05-30 2015-12-22 Seagate Technology Llc Apparatuses and methods for magnetic features of articles
US9201019B2 (en) 2013-05-30 2015-12-01 Seagate Technology Llc Article edge inspection
WO2015039245A1 (en) * 2013-09-18 2015-03-26 Ats Automation Tooling Systems Inc. System and method for decoration inspection on transparent media
US9645097B2 (en) * 2014-06-20 2017-05-09 Kla-Tencor Corporation In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning
CN107026095A (zh) * 2016-02-01 2017-08-08 易发精机股份有限公司 晶圆边缘量测模组
KR102189687B1 (ko) 2016-06-13 2020-12-14 에이에스엠엘 네델란즈 비.브이. 기판 상의 타겟 구조체의 위치를 결정하는 방법 및 장치, 기판의 위치를 결정하는 방법 및 장치
US10989670B1 (en) * 2017-12-19 2021-04-27 Camtek Ltd. Detection of pits using an automatic optical inspection system
JP6806098B2 (ja) * 2018-01-18 2021-01-06 株式会社Sumco 半導体ウェーハの評価方法および半導体ウェーハの製造方法
US11538723B2 (en) * 2019-05-23 2022-12-27 Tokyo Electron Limited Optical diagnostics of semiconductor process using hyperspectral imaging
KR102180648B1 (ko) * 2019-08-05 2020-11-19 주식회사 휴비츠 3차원 단층촬영 검사 장치 및 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11281337A (ja) * 1997-09-22 1999-10-15 Kobe Steel Ltd 欠陥検査装置
JP2000046537A (ja) * 1998-07-24 2000-02-18 Kobe Steel Ltd 欠陥検査装置
JP2000136916A (ja) * 1998-10-15 2000-05-16 Wacker Siltronic Corp 半導体ウエ―ハ上のエッジ欠陥を検出、モニタ及び特徴付ける方法及び装置
JP2003098122A (ja) * 2001-09-21 2003-04-03 Toshiba Ceramics Co Ltd ガラス基板の外観検査装置
WO2003028089A1 (en) * 2001-09-19 2003-04-03 Olympus Optical Co., Ltd. Semiconductor wafer inspection system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040207836A1 (en) * 2002-09-27 2004-10-21 Rajeshwar Chhibber High dynamic range optical inspection system and method
DE10324474B4 (de) * 2003-05-30 2006-05-04 Leica Microsystems Semiconductor Gmbh Vorrichtung zur Wafer-Inspektion

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11281337A (ja) * 1997-09-22 1999-10-15 Kobe Steel Ltd 欠陥検査装置
JP2000046537A (ja) * 1998-07-24 2000-02-18 Kobe Steel Ltd 欠陥検査装置
JP2000136916A (ja) * 1998-10-15 2000-05-16 Wacker Siltronic Corp 半導体ウエ―ハ上のエッジ欠陥を検出、モニタ及び特徴付ける方法及び装置
WO2003028089A1 (en) * 2001-09-19 2003-04-03 Olympus Optical Co., Ltd. Semiconductor wafer inspection system
JP2003098122A (ja) * 2001-09-21 2003-04-03 Toshiba Ceramics Co Ltd ガラス基板の外観検査装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010133989A3 (en) * 2009-05-22 2011-03-31 Lam Research Corporation Arrangements and methods for improving bevel etch repeatability among substrates
CN109416502A (zh) * 2016-07-12 2019-03-01 西默有限公司 光刻光学器件调节和监测
CN109416502B (zh) * 2016-07-12 2021-11-02 西默有限公司 光刻光学器件调节和监测
WO2024252796A1 (ja) * 2023-06-09 2024-12-12 株式会社Sumco 欠陥検出装置、欠陥検出方法、及びプログラム

Also Published As

Publication number Publication date
KR20100007968A (ko) 2010-01-22
JPWO2008139735A1 (ja) 2010-07-29
TW200905186A (en) 2009-02-01
US20100053603A1 (en) 2010-03-04

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