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WO2008136423A1 - 半導体ウェーハ処理装置、基準角度位置検出方法及び半導体ウェーハ - Google Patents

半導体ウェーハ処理装置、基準角度位置検出方法及び半導体ウェーハ Download PDF

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Publication number
WO2008136423A1
WO2008136423A1 PCT/JP2008/058097 JP2008058097W WO2008136423A1 WO 2008136423 A1 WO2008136423 A1 WO 2008136423A1 JP 2008058097 W JP2008058097 W JP 2008058097W WO 2008136423 A1 WO2008136423 A1 WO 2008136423A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
outer circumference
angular position
reference angular
length data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058097
Other languages
English (en)
French (fr)
Inventor
Yoshinori Hayashi
Hideki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to KR1020097021941A priority Critical patent/KR101164310B1/ko
Priority to JP2009512988A priority patent/JP5093858B2/ja
Priority to DE112008001104.4T priority patent/DE112008001104B4/de
Priority to US12/597,635 priority patent/US20100075442A1/en
Publication of WO2008136423A1 publication Critical patent/WO2008136423A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

【課題】基準角度位置の設定された半導体ウェーハについての当該基準角度位置を適切に検出することが可能な半導体ウェーハ処理装置及び基準角度位置検出方法と、基準角度位置が適切に設定された半導体ウェーハとを提供する。 【解決手段】半導体ウェーハ（１００）は、外周エッジ部分（１０１）の一部に、径方向に対して垂直な結晶方位検出用平面（１０２）が結晶方位に対して所定角度をなす位置に形成されている。半導体ウェーハ処理装置は、この半導体ウェーハ（１００）の外周エッジ部分（１０１）を周方向に順次撮影し、外周エッジ形状を表す第１外周ベベル面（１０１b）の長さデータ、外周端面（１０１a）の長さデータ及び第２外周ベベル面（１０１c）の長さデータを生成し、第１外周ベベル面（１０１b）の長さデータ及び第２外周ベベル面（１０１c）の長さデータが最小、且つ、外周端面（１０１a）の長さデータが最大となる角度位置を基準角度位置として検出する。
PCT/JP2008/058097 2007-04-27 2008-04-25 半導体ウェーハ処理装置、基準角度位置検出方法及び半導体ウェーハ Ceased WO2008136423A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097021941A KR101164310B1 (ko) 2007-04-27 2008-04-25 반도체 웨이퍼 처리 장치 및 기준각도 위치 검출 방법
JP2009512988A JP5093858B2 (ja) 2007-04-27 2008-04-25 半導体ウェーハ処理装置及び基準角度位置検出方法
DE112008001104.4T DE112008001104B4 (de) 2007-04-27 2008-04-25 Vorrichtung zur Halbleiterwafer-Bearbeitung und Verfahren sowie Vorrichtung zur Ermittlung einer Bezugswinkelposition
US12/597,635 US20100075442A1 (en) 2007-04-27 2008-04-25 Semiconductor wafer processing apparatus, reference angular position detection method, and semiconductor wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-120173 2007-04-27
JP2007120173 2007-04-27

Publications (1)

Publication Number Publication Date
WO2008136423A1 true WO2008136423A1 (ja) 2008-11-13

Family

ID=39943530

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058097 Ceased WO2008136423A1 (ja) 2007-04-27 2008-04-25 半導体ウェーハ処理装置、基準角度位置検出方法及び半導体ウェーハ

Country Status (5)

Country Link
US (1) US20100075442A1 (ja)
JP (1) JP5093858B2 (ja)
KR (1) KR101164310B1 (ja)
DE (1) DE112008001104B4 (ja)
WO (1) WO2008136423A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129284A (ja) * 2010-12-14 2012-07-05 Disco Abrasive Syst Ltd ウェーハ生産方法
WO2015178109A1 (ja) * 2014-05-23 2015-11-26 東京エレクトロン株式会社 ウエハの位置検出装置、ウエハの位置検出方法、及び記憶媒体
JP2016048744A (ja) * 2014-08-28 2016-04-07 株式会社ディスコ 加工装置
JP2022516137A (ja) * 2019-01-07 2022-02-24 アプライド マテリアルズ インコーポレイテッド 遮光エッジ除外ゾーンを備えた透明な基板

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6215059B2 (ja) * 2014-01-10 2017-10-18 株式会社ディスコ マーク検出方法
CN106030772B (zh) 2014-02-12 2020-04-14 科磊股份有限公司 晶片缺口检测
JP7497262B2 (ja) * 2020-09-24 2024-06-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板位置調整方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01303737A (ja) * 1988-05-31 1989-12-07 Canon Inc 位置決め装置
JPH0276226A (ja) * 1988-09-12 1990-03-15 Sumitomo Electric Ind Ltd 半導体ウエーハ
JPH02106821U (ja) * 1989-02-10 1990-08-24
JPH0373553A (ja) * 1989-08-14 1991-03-28 Dainippon Screen Mfg Co Ltd ウエハの位置検出装置
JPH09110589A (ja) * 1995-10-19 1997-04-28 Toshiba Corp シリコンウェハ及びその製造方法
JPH09167723A (ja) * 1995-12-15 1997-06-24 Toshiba Corp 半導体装置用ウェーハ及びその製造方法
JPH09278595A (ja) * 1996-04-10 1997-10-28 Sumitomo Electric Ind Ltd Ｉｉｉ −ｖ族化合物半導体ウエハ及びその製造方法
JP2001267193A (ja) * 2000-03-17 2001-09-28 Toshiba Corp 半導体ウェーハ
JP2007095909A (ja) * 2005-09-28 2007-04-12 Disco Abrasive Syst Ltd 特殊形状の結晶方位識別部が形成されたウェーハ
JP2007189093A (ja) * 2006-01-13 2007-07-26 Disco Abrasive Syst Ltd 半導体ウエーハ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452078A (en) * 1993-06-17 1995-09-19 Ann F. Koo Method and apparatus for finding wafer index marks and centers
JP3213563B2 (ja) * 1997-03-11 2001-10-02 株式会社スーパーシリコン研究所 ノッチレスウェーハの製造方法
JP4071476B2 (ja) * 2001-03-21 2008-04-02 株式会社東芝 半導体ウェーハ及び半導体ウェーハの製造方法
CN1260800C (zh) * 2001-09-19 2006-06-21 奥林巴斯光学工业株式会社 半导体晶片检查设备
JP4093793B2 (ja) * 2002-04-30 2008-06-04 信越半導体株式会社 半導体ウエーハの製造方法及びウエーハ

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01303737A (ja) * 1988-05-31 1989-12-07 Canon Inc 位置決め装置
JPH0276226A (ja) * 1988-09-12 1990-03-15 Sumitomo Electric Ind Ltd 半導体ウエーハ
JPH02106821U (ja) * 1989-02-10 1990-08-24
JPH0373553A (ja) * 1989-08-14 1991-03-28 Dainippon Screen Mfg Co Ltd ウエハの位置検出装置
JPH09110589A (ja) * 1995-10-19 1997-04-28 Toshiba Corp シリコンウェハ及びその製造方法
JPH09167723A (ja) * 1995-12-15 1997-06-24 Toshiba Corp 半導体装置用ウェーハ及びその製造方法
JPH09278595A (ja) * 1996-04-10 1997-10-28 Sumitomo Electric Ind Ltd Ｉｉｉ −ｖ族化合物半導体ウエハ及びその製造方法
JP2001267193A (ja) * 2000-03-17 2001-09-28 Toshiba Corp 半導体ウェーハ
JP2007095909A (ja) * 2005-09-28 2007-04-12 Disco Abrasive Syst Ltd 特殊形状の結晶方位識別部が形成されたウェーハ
JP2007189093A (ja) * 2006-01-13 2007-07-26 Disco Abrasive Syst Ltd 半導体ウエーハ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129284A (ja) * 2010-12-14 2012-07-05 Disco Abrasive Syst Ltd ウェーハ生産方法
WO2015178109A1 (ja) * 2014-05-23 2015-11-26 東京エレクトロン株式会社 ウエハの位置検出装置、ウエハの位置検出方法、及び記憶媒体
JP2015222796A (ja) * 2014-05-23 2015-12-10 東京エレクトロン株式会社 ウエハの位置検出装置、ウエハの位置検出方法、及び記憶媒体
JP2016048744A (ja) * 2014-08-28 2016-04-07 株式会社ディスコ 加工装置
JP2022516137A (ja) * 2019-01-07 2022-02-24 アプライド マテリアルズ インコーポレイテッド 遮光エッジ除外ゾーンを備えた透明な基板
JP7520017B2 (ja) 2019-01-07 2024-07-22 アプライド マテリアルズ インコーポレイテッド 遮光エッジ除外ゾーンを備えた透明な基板

Also Published As

Publication number Publication date
JP5093858B2 (ja) 2012-12-12
KR101164310B1 (ko) 2012-07-09
DE112008001104B4 (de) 2016-02-04
US20100075442A1 (en) 2010-03-25
DE112008001104T5 (de) 2010-02-18
JPWO2008136423A1 (ja) 2010-07-29
KR20090132610A (ko) 2009-12-30

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