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WO2008136316A1 - Laminated substrate structure and method for manufacturing the same - Google Patents

Laminated substrate structure and method for manufacturing the same Download PDF

Info

Publication number
WO2008136316A1
WO2008136316A1 PCT/JP2008/057801 JP2008057801W WO2008136316A1 WO 2008136316 A1 WO2008136316 A1 WO 2008136316A1 JP 2008057801 W JP2008057801 W JP 2008057801W WO 2008136316 A1 WO2008136316 A1 WO 2008136316A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
manufacturing
same
substrate structure
laminated substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057801
Other languages
French (fr)
Japanese (ja)
Inventor
Manabu Tamura
Shigefumi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2009512938A priority Critical patent/JPWO2008136316A1/en
Publication of WO2008136316A1 publication Critical patent/WO2008136316A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

Disclosed is a laminated substrate structure wherein electrical conductivity between a conductive member penetrating through a substrate and a conductive substrate joined to the substrate is high. Specifically, a conductive member (12) is embedded in a glass substrate (11). A metal layer (13) serving as a conductive layer is so formed on a major surface (11b) of the glass substrate (11) as to be electrically connected with one of exposed portions of the conductive member (12). A metal silicide layer (14) is formed on the metal layer (13). A silicon substrate (15) is joined to the major surface (11b) of the glass substrate (11).
PCT/JP2008/057801 2007-04-26 2008-04-23 Laminated substrate structure and method for manufacturing the same Ceased WO2008136316A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009512938A JPWO2008136316A1 (en) 2007-04-26 2008-04-23 Multilayer substrate structure and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-117422 2007-04-26
JP2007117422 2007-04-26

Publications (1)

Publication Number Publication Date
WO2008136316A1 true WO2008136316A1 (en) 2008-11-13

Family

ID=39943428

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057801 Ceased WO2008136316A1 (en) 2007-04-26 2008-04-23 Laminated substrate structure and method for manufacturing the same

Country Status (2)

Country Link
JP (1) JPWO2008136316A1 (en)
WO (1) WO2008136316A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012102252A1 (en) * 2011-01-27 2012-08-02 パナソニック株式会社 Substrate with though electrode and method for producing same
CN103508410A (en) * 2012-06-21 2014-01-15 罗伯特·博世有限公司 Method for manufacturing a component having an electrical through-connection
JP2014016165A (en) * 2012-07-05 2014-01-30 Seiko Epson Corp Semiconductor element and electronic apparatus
CN109425757A (en) * 2017-09-01 2019-03-05 精工爱普生株式会社 Physical quantity transducer, electronic equipment and moving body
JP2022027842A (en) * 2015-10-02 2022-02-14 Ａｇｃ株式会社 Glass substrate, laminate substrate and laminate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177200A (en) * 1997-12-05 1999-07-02 Toshiba Corp Circuit board, method for manufacturing circuit board, method for inspecting circuit board, and apparatus for manufacturing circuit board
JP2001129800A (en) * 1999-11-04 2001-05-15 Japan Science & Technology Corp Substrate with feedthrough and manufacturing method thereof
JP2001264677A (en) * 2000-03-15 2001-09-26 Olympus Optical Co Ltd Scanning mirror

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10259039A (en) * 1997-03-18 1998-09-29 Fujitsu Ltd Anodic bonding method and apparatus
US6078103A (en) * 1998-10-29 2000-06-20 Mcdonnell Douglas Corporation Dimpled contacts for metal-to-semiconductor connections, and methods for fabricating same
EP1151962B1 (en) * 2000-04-28 2007-06-13 STMicroelectronics S.r.l. Structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material, composite structure using the electric connection structure, and manufacturing process thereof
EP1219565A1 (en) * 2000-12-29 2002-07-03 STMicroelectronics S.r.l. Process for manufacturing integrated devices having connections on separate wafers and stacking the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177200A (en) * 1997-12-05 1999-07-02 Toshiba Corp Circuit board, method for manufacturing circuit board, method for inspecting circuit board, and apparatus for manufacturing circuit board
JP2001129800A (en) * 1999-11-04 2001-05-15 Japan Science & Technology Corp Substrate with feedthrough and manufacturing method thereof
JP2001264677A (en) * 2000-03-15 2001-09-26 Olympus Optical Co Ltd Scanning mirror

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012102252A1 (en) * 2011-01-27 2012-08-02 パナソニック株式会社 Substrate with though electrode and method for producing same
CN103081094A (en) * 2011-01-27 2013-05-01 松下电器产业株式会社 Substrate with though electrode and method for producing same
JPWO2012102252A1 (en) * 2011-01-27 2014-06-30 パナソニック株式会社 Substrate with through electrode and method for manufacturing the same
CN103508410A (en) * 2012-06-21 2014-01-15 罗伯特·博世有限公司 Method for manufacturing a component having an electrical through-connection
CN103508410B (en) * 2012-06-21 2017-07-18 罗伯特·博世有限公司 Method for manufacturing the component with electric plating through hole
JP2014016165A (en) * 2012-07-05 2014-01-30 Seiko Epson Corp Semiconductor element and electronic apparatus
JP2022027842A (en) * 2015-10-02 2022-02-14 Ａｇｃ株式会社 Glass substrate, laminate substrate and laminate
JP7298075B2 (en) 2015-10-02 2023-06-27 Ａｇｃ株式会社 Glass substrates, laminated substrates, and laminates
CN109425757A (en) * 2017-09-01 2019-03-05 精工爱普生株式会社 Physical quantity transducer, electronic equipment and moving body
EP3450991A1 (en) * 2017-09-01 2019-03-06 Seiko Epson Corporation Physical quantity sensor, electronic device, and vehicle

Also Published As

Publication number Publication date
JPWO2008136316A1 (en) 2010-07-29

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