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WO2008133278A1 - Procédé de fabrication d'un monocristal de silicium, appareil pour la mise en œuvre de ce procédé et lingot de monocristal de silicium - Google Patents

Procédé de fabrication d'un monocristal de silicium, appareil pour la mise en œuvre de ce procédé et lingot de monocristal de silicium Download PDF

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Publication number
WO2008133278A1
WO2008133278A1 PCT/JP2008/057862 JP2008057862W WO2008133278A1 WO 2008133278 A1 WO2008133278 A1 WO 2008133278A1 JP 2008057862 W JP2008057862 W JP 2008057862W WO 2008133278 A1 WO2008133278 A1 WO 2008133278A1
Authority
WO
WIPO (PCT)
Prior art keywords
dopant
single crystal
silicon single
melt
accommodation chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057862
Other languages
English (en)
Japanese (ja)
Inventor
Yasuhito Narushima
Shinichi Kawazoe
Fukuo Ogawa
Masahiro Irokawa
Toshimichi Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Sumco Techxiv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007114183A external-priority patent/JP5176101B2/ja
Priority claimed from JP2007114184A external-priority patent/JP5437565B2/ja
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Priority to US12/597,116 priority Critical patent/US10294583B2/en
Priority to DE112008000893.0T priority patent/DE112008000893B8/de
Publication of WO2008133278A1 publication Critical patent/WO2008133278A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La vitesse de sublimation de dopant peut être contrôlée de façon précise sans être influencée par un changement au cours du temps de l'environnement thermique intra-four. L'invention porte sur une unité d'alimentation en dopant, équipée d'une chambre de réception et d'un tube d'alimentation. Un dopant sublimable est reçu. Lors de la sublimation du dopant à l'intérieur de la chambre de réception, le dopant sublimé est introduit dans une masse fondue. Le dopant à l'intérieur de la chambre de réception de l'unité d'alimentation en dopant est chauffé. La dose thermique par les moyens de chauffage est contrôlée de façon à sublimer le dopant à une vitesse de sublimation désirée. Le dopant est introduit dans la masse fondue de telle sorte que la concentration de dopant jusqu'à la formation de la demi-partie antérieure d'une partie de tronc rectiligne de monocristal de silicium se trouve dans l'état de faible concentration ou de non-addition. Après la formation de la demi-partie antérieure de la partie de tronc rectiligne du monocristal de silicium, le dopant est introduit dans la masse fondue de telle sorte que chaque partie du cristal se trouve dans l'état d'avoir le dopant ajouté à une concentration élevée désirée.
PCT/JP2008/057862 2007-04-24 2008-04-23 Procédé de fabrication d'un monocristal de silicium, appareil pour la mise en œuvre de ce procédé et lingot de monocristal de silicium Ceased WO2008133278A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/597,116 US10294583B2 (en) 2007-04-24 2008-04-23 Producing method and apparatus of silicon single crystal, and silicon single crystal ingot
DE112008000893.0T DE112008000893B8 (de) 2007-04-24 2008-04-23 Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-114184 2007-04-24
JP2007114183A JP5176101B2 (ja) 2007-04-24 2007-04-24 シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット
JP2007-114183 2007-04-24
JP2007114184A JP5437565B2 (ja) 2007-04-24 2007-04-24 半導体単結晶の製造装置

Publications (1)

Publication Number Publication Date
WO2008133278A1 true WO2008133278A1 (fr) 2008-11-06

Family

ID=39925726

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057862 Ceased WO2008133278A1 (fr) 2007-04-24 2008-04-23 Procédé de fabrication d'un monocristal de silicium, appareil pour la mise en œuvre de ce procédé et lingot de monocristal de silicium

Country Status (3)

Country Link
US (1) US10294583B2 (fr)
DE (1) DE112008000893B8 (fr)
WO (1) WO2008133278A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130305982A1 (en) * 2010-10-21 2013-11-21 Sung Wan Hong Process for growing silicon carbide single crystal and device for the same
CN118660993A (zh) * 2022-01-06 2024-09-17 环球晶圆股份有限公司 用于涉及硅进料管的惰性气体控制的单晶硅锭生长的方法

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JP5302556B2 (ja) 2008-03-11 2013-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置及びシリコン単結晶の製造方法
US9102035B2 (en) 2012-03-12 2015-08-11 MEMC Electronics Materials S.p.A. Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor
US20160017513A1 (en) 2013-03-15 2016-01-21 Memc Electronic Materials S.P.A. Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material
JP6528178B2 (ja) * 2015-07-31 2019-06-12 株式会社Sumco シリコン単結晶の製造方法
JP6702141B2 (ja) 2016-11-01 2020-05-27 信越半導体株式会社 単結晶引上げ装置
US11028499B2 (en) * 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Methods for preparing a doped ingot
US11028500B2 (en) * 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
CN113166968A (zh) * 2018-12-14 2021-07-23 环球晶圆股份有限公司 包含具有用于升华固体掺杂物的多孔分隔构件的掺杂导管的铸锭拉晶设备
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
EP3835463A1 (fr) * 2019-12-13 2021-06-16 Siltronic AG Procédé et dispositif de fabrication d'un monocristal en silicium, dopé avec une substance de dopage de type n
EP4244411A1 (fr) 2020-11-11 2023-09-20 GlobalWafers Co., Ltd. Procédés de formation d'un lingot de silicium monocristallin à érosion de creuset réduite
US11499245B2 (en) 2020-12-30 2022-11-15 Globalwafers Co., Ltd. Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems
EP4271864B1 (fr) * 2020-12-31 2024-12-11 GlobalWafers Co., Ltd. Systèmes et procédés de production d'un lingot de silicium monocristallin utilisant un agent dopant vaporisé
US11866844B2 (en) * 2020-12-31 2024-01-09 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using a vaporized dopant
US11795569B2 (en) 2020-12-31 2023-10-24 Globalwafers Co., Ltd. Systems for producing a single crystal silicon ingot using a vaporized dopant
CN113862775B (zh) * 2021-09-30 2022-06-10 西安奕斯伟材料科技有限公司 一种用于制造掺氮单晶硅的设备及方法
CN114318507B (zh) * 2021-12-23 2023-10-31 山东有研半导体材料有限公司 一种重掺砷大直径低阻硅单晶的拉制方法
US12221718B2 (en) * 2022-10-13 2025-02-11 Globalwafers Co., Ltd. Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process
US12195871B2 (en) * 2022-10-13 2025-01-14 Globalwafers Co., Ltd. Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process
FI4353878T3 (fi) 2022-10-14 2025-07-23 Siltronic Ag Menetelmä piistä valmistetun monokiteen, joka on seostettu epäpuhtausaineella, valmistukseen cz-menetelmän mukaisesti

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JPS59190292A (ja) * 1983-04-08 1984-10-29 Shin Etsu Handotai Co Ltd 半導体シリコン単結晶の抵抗率制御方法
JP2003532613A (ja) * 2000-05-11 2003-11-05 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド チョクラルスキー法により成長させたシリコン結晶において低抵抗率を得る多段階ヒ素ドーピング法
JP2005247671A (ja) * 2004-03-08 2005-09-15 Toshiba Ceramics Co Ltd 単結晶引上装置

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JPS59190292A (ja) * 1983-04-08 1984-10-29 Shin Etsu Handotai Co Ltd 半導体シリコン単結晶の抵抗率制御方法
JP2003532613A (ja) * 2000-05-11 2003-11-05 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド チョクラルスキー法により成長させたシリコン結晶において低抵抗率を得る多段階ヒ素ドーピング法
JP2005247671A (ja) * 2004-03-08 2005-09-15 Toshiba Ceramics Co Ltd 単結晶引上装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130305982A1 (en) * 2010-10-21 2013-11-21 Sung Wan Hong Process for growing silicon carbide single crystal and device for the same
US9359690B2 (en) * 2010-10-21 2016-06-07 Sk Innovation Co., Ltd. Process for growing silicon carbide single crystal and device for the same
CN118660993A (zh) * 2022-01-06 2024-09-17 环球晶圆股份有限公司 用于涉及硅进料管的惰性气体控制的单晶硅锭生长的方法
US12398483B2 (en) 2022-01-06 2025-08-26 Globalwafers Co., Ltd. Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube

Also Published As

Publication number Publication date
US20100294999A1 (en) 2010-11-25
DE112008000893T5 (de) 2010-01-28
US10294583B2 (en) 2019-05-21
DE112008000893B8 (de) 2022-02-24
DE112008000893B4 (de) 2021-07-29

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