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WO2008123289A1 - Silicon nitride film and nonvolatile semiconductor memory device - Google Patents

Silicon nitride film and nonvolatile semiconductor memory device Download PDF

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Publication number
WO2008123289A1
WO2008123289A1 PCT/JP2008/055679 JP2008055679W WO2008123289A1 WO 2008123289 A1 WO2008123289 A1 WO 2008123289A1 JP 2008055679 W JP2008055679 W JP 2008055679W WO 2008123289 A1 WO2008123289 A1 WO 2008123289A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon nitride
nitride film
memory device
semiconductor memory
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/055679
Other languages
French (fr)
Japanese (ja)
Inventor
Seiichi Miyazaki
Masayuki Kohno
Tatsuo Nishita
Toshio Nakanishi
Yoshihiro Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Hiroshima University NUC
Original Assignee
Tokyo Electron Ltd
Hiroshima University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007254273A external-priority patent/JP2008270706A/en
Application filed by Tokyo Electron Ltd, Hiroshima University NUC filed Critical Tokyo Electron Ltd
Priority to US12/532,681 priority Critical patent/US20100140683A1/en
Priority to CN200880009852XA priority patent/CN101641783B/en
Publication of WO2008123289A1 publication Critical patent/WO2008123289A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H10P14/69433—

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Non-Volatile Memory (AREA)

Abstract

Provided is a silicon nitride film having excellent charge storage performance effective as a charge storage layer for a semiconductor memory device. The silicon nitride film having substantially uniform trap density in the film thickness direction has high charge storage performance. The silicon nitride film is formed by plasma CVD by using a plasma processing apparatus (100) wherein microwaves are introduced into a chamber (1) by a flat antenna (31) having a plurality of holes. Plasma is generated by the microwaves by introducing a material gas, which contains a nitrogen containing compound and a silicon containing compound, into the chamber (1), and the silicon nitride film is deposited on the surface of a body to be processed by the plasma.
PCT/JP2008/055679 2007-03-26 2008-03-26 Silicon nitride film and nonvolatile semiconductor memory device Ceased WO2008123289A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/532,681 US20100140683A1 (en) 2007-03-26 2008-03-26 Silicon nitride film and nonvolatile semiconductor memory device
CN200880009852XA CN101641783B (en) 2007-03-26 2008-03-26 silicon nitride film and nonvolatile semiconductor memory device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-079852 2007-03-26
JP2007079852 2007-03-26
JP2007-254273 2007-09-28
JP2007254273A JP2008270706A (en) 2007-03-26 2007-09-28 Silicon nitride film and nonvolatile semiconductor memory device

Publications (1)

Publication Number Publication Date
WO2008123289A1 true WO2008123289A1 (en) 2008-10-16

Family

ID=39830777

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055679 Ceased WO2008123289A1 (en) 2007-03-26 2008-03-26 Silicon nitride film and nonvolatile semiconductor memory device

Country Status (1)

Country Link
WO (1) WO2008123289A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113928A1 (en) * 2009-03-31 2010-10-07 東京エレクトロン株式会社 Method for forming silicon nitride film, method for manufacturing semiconductor memory device, and plasma cvd apparatus
US8198671B2 (en) * 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140682A (en) * 1997-07-18 1999-02-12 Sony Corp Nonvolatile semiconductor memory device and method of manufacturing the same
WO2001069665A1 (en) * 2000-03-13 2001-09-20 Tadahiro Ohmi Method for forming dielectric film
JP2004214506A (en) * 2003-01-07 2004-07-29 Sony Corp Method of operating nonvolatile semiconductor memory device
JP2004235519A (en) * 2003-01-31 2004-08-19 Renesas Technology Corp Nonvolatile semiconductor memory device
JP2004241781A (en) * 2003-02-07 2004-08-26 Samsung Electronics Co Ltd Single electron transistor having memory function and method of manufacturing the same
JP2005347679A (en) * 2004-06-07 2005-12-15 Renesas Technology Corp Method for manufacturing nonvolatile semiconductor memory device
JP2006190990A (en) * 2004-12-10 2006-07-20 Toshiba Corp Semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140682A (en) * 1997-07-18 1999-02-12 Sony Corp Nonvolatile semiconductor memory device and method of manufacturing the same
WO2001069665A1 (en) * 2000-03-13 2001-09-20 Tadahiro Ohmi Method for forming dielectric film
JP2004214506A (en) * 2003-01-07 2004-07-29 Sony Corp Method of operating nonvolatile semiconductor memory device
JP2004235519A (en) * 2003-01-31 2004-08-19 Renesas Technology Corp Nonvolatile semiconductor memory device
JP2004241781A (en) * 2003-02-07 2004-08-26 Samsung Electronics Co Ltd Single electron transistor having memory function and method of manufacturing the same
JP2005347679A (en) * 2004-06-07 2005-12-15 Renesas Technology Corp Method for manufacturing nonvolatile semiconductor memory device
JP2006190990A (en) * 2004-12-10 2006-07-20 Toshiba Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113928A1 (en) * 2009-03-31 2010-10-07 東京エレクトロン株式会社 Method for forming silicon nitride film, method for manufacturing semiconductor memory device, and plasma cvd apparatus
US8198671B2 (en) * 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma

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