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WO2008123141A1 - 化合物半導体積層体及びその製造方法並びに半導体デバイス - Google Patents

化合物半導体積層体及びその製造方法並びに半導体デバイス Download PDF

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Publication number
WO2008123141A1
WO2008123141A1 PCT/JP2008/055275 JP2008055275W WO2008123141A1 WO 2008123141 A1 WO2008123141 A1 WO 2008123141A1 JP 2008055275 W JP2008055275 W JP 2008055275W WO 2008123141 A1 WO2008123141 A1 WO 2008123141A1
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WIPO (PCT)
Prior art keywords
compound semiconductor
substrate
semiconductor laminate
laminate
single crystal
Prior art date
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Ceased
Application number
PCT/JP2008/055275
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English (en)
French (fr)
Inventor
Yoshihiko Shibata
Masatoshi Miyahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Microdevices Corp
Original Assignee
Asahi Kasei EMD Corp
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Filing date
Publication date
Application filed by Asahi Kasei EMD Corp filed Critical Asahi Kasei EMD Corp
Priority to CN200880009299XA priority Critical patent/CN101641790B/zh
Priority to US12/532,377 priority patent/US8461026B2/en
Priority to JP2009509074A priority patent/JP5401706B2/ja
Priority to KR1020097019644A priority patent/KR101202073B1/ko
Priority to EP08738698.3A priority patent/EP2131398B1/en
Publication of WO2008123141A1 publication Critical patent/WO2008123141A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H10P14/2905—
    • H10P14/3202—
    • H10P14/3416—
    • H10P14/3422—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Hall/Mr Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)

Abstract

　本発明は、Ｓｉ基板上にＩｎＳｂ膜を形成することを可能にし、ホール素子，磁気抵抗素子などの磁気センサや赤外センサなどの光デバイス、トランジスタなどの電子デバイスへの応用展開を工業的に提供可能にする化合物半導体積層体及びその製造方法に関する。Ｓｉ基板（１）上に、Ａｓを含まない化合物半導体である活性層（２）が直接形成されている。この活性層（２）とＳｉ基板（１）の単結晶層の界面にＡｓが存在している。化合物半導体は、少なくとも窒素を含有する。化合物半導体は、単結晶薄膜である。Ｓｉ基板（１）は、バルク単結晶基板又は最上層がＳｉである薄膜基板である。
PCT/JP2008/055275 2007-03-23 2008-03-21 化合物半導体積層体及びその製造方法並びに半導体デバイス Ceased WO2008123141A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN200880009299XA CN101641790B (zh) 2007-03-23 2008-03-21 化合物半导体层叠体及其制造方法以及半导体器件
US12/532,377 US8461026B2 (en) 2007-03-23 2008-03-21 Compound semiconductor lamination, method for manufacturing the same, and semiconductor device
JP2009509074A JP5401706B2 (ja) 2007-03-23 2008-03-21 化合物半導体積層体及びその製造方法並びに半導体デバイス
KR1020097019644A KR101202073B1 (ko) 2007-03-23 2008-03-21 화합물 반도체 적층체 및 그의 제조 방법 및 반도체 디바이스
EP08738698.3A EP2131398B1 (en) 2007-03-23 2008-03-21 Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-077724 2007-03-23
JP2007077724 2007-03-23

Publications (1)

Publication Number Publication Date
WO2008123141A1 true WO2008123141A1 (ja) 2008-10-16

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ID=39830638

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PCT/JP2008/055275 Ceased WO2008123141A1 (ja) 2007-03-23 2008-03-21 化合物半導体積層体及びその製造方法並びに半導体デバイス

Country Status (6)

Country Link
US (1) US8461026B2 (ja)
EP (1) EP2131398B1 (ja)
JP (1) JP5401706B2 (ja)
KR (1) KR101202073B1 (ja)
CN (1) CN101641790B (ja)
WO (1) WO2008123141A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225870A (ja) * 2009-03-24 2010-10-07 Toshiba Corp 半導体素子
JP2013183132A (ja) * 2012-03-05 2013-09-12 Asahi Kasei Electronics Co Ltd 半導体基板及びその製造方法、並びに半導体装置
JP2014022564A (ja) * 2012-07-18 2014-02-03 Asahi Kasei Corp 化合物半導体基板及びその製造方法
JP2018512739A (ja) * 2015-04-10 2018-05-17 アレグロ・マイクロシステムズ・エルエルシー ホール効果検出素子
JP2020205429A (ja) * 2015-05-01 2020-12-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 表面ブロッキング化学作用を用いた薄膜誘電体の選択的堆積

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105103320A (zh) * 2013-03-25 2015-11-25 旭化成微电子株式会社 化合物半导体层叠体以及半导体装置
WO2018100837A1 (ja) * 2016-12-02 2018-06-07 Tdk株式会社 磁化反転素子、磁気抵抗効果素子、集積素子及び集積素子の製造方法
CN108376725A (zh) * 2018-02-06 2018-08-07 吉林大学 一种基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器
CN113109415B (zh) * 2021-03-26 2024-06-14 南昌大学 一种适用于二次离子质谱分析的多层膜界面位置表征方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02161729A (ja) * 1988-12-15 1990-06-21 Fujitsu Ltd バイポーラ半導体装置の製造方法
JPH0729825A (ja) * 1993-07-08 1995-01-31 Nec Corp 半導体基板とその製造方法
JPH0737819A (ja) * 1993-07-19 1995-02-07 Hitachi Cable Ltd 半導体ウエハ及びその製造方法
JPH0737806A (ja) * 1993-07-16 1995-02-07 Fujitsu Ltd 半導体薄膜成長方法
JPH0794409A (ja) * 1993-09-20 1995-04-07 Fujitsu Ltd Ｉｉｉ−ｖ族化合物半導体薄膜の形成方法
JPH07249577A (ja) 1993-05-28 1995-09-26 Matsushita Electric Ind Co Ltd 半導体薄膜の製造方法および磁電変換素子の製造方法
JPH09162125A (ja) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp 半導体装置，及びその製造方法
WO2004077585A1 (ja) 2003-02-26 2004-09-10 Asahi Kasei Electronics Co., Ltd. 半導体センサ及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61274312A (ja) * 1985-05-14 1986-12-04 Sumitomo Electric Ind Ltd 化合物半導体装置
JPH0822800B2 (ja) * 1989-02-21 1996-03-06 日本電気株式会社 ▲ｉｉｉ▼―ｖ族化合物半導体薄膜の形成方法
US5385864A (en) * 1993-05-28 1995-01-31 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor thin film and a Hall-effect device
US6406795B1 (en) * 1998-11-25 2002-06-18 Applied Optoelectronics, Inc. Compliant universal substrates for optoelectronic and electronic devices
JP2001127326A (ja) * 1999-08-13 2001-05-11 Oki Electric Ind Co Ltd 半導体基板及びその製造方法、並びに、この半導体基板を用いた太陽電池及びその製造方法
US6746777B1 (en) * 2000-05-31 2004-06-08 Applied Optoelectronics, Inc. Alternative substrates for epitaxial growth
DE10042904C2 (de) * 2000-08-31 2003-03-13 Infineon Technologies Ag Halbleiterlaserchip mit integriertem Strahlformer und Verfahren zum Herstellen eines Halbleiterlaserchips mit integriertem Strahlformer
US7015497B1 (en) * 2002-08-27 2006-03-21 The Ohio State University Self-aligned and self-limited quantum dot nanoswitches and methods for making same
US6911716B2 (en) * 2002-09-09 2005-06-28 Lucent Technologies, Inc. Bipolar transistors with vertical structures
KR20070061531A (ko) 2004-08-02 2007-06-13 키네티큐 리미티드 패턴화된 실리콘상에 카드뮴 수은 텔루라이드의 제조

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02161729A (ja) * 1988-12-15 1990-06-21 Fujitsu Ltd バイポーラ半導体装置の製造方法
JPH07249577A (ja) 1993-05-28 1995-09-26 Matsushita Electric Ind Co Ltd 半導体薄膜の製造方法および磁電変換素子の製造方法
JPH0729825A (ja) * 1993-07-08 1995-01-31 Nec Corp 半導体基板とその製造方法
JPH0737806A (ja) * 1993-07-16 1995-02-07 Fujitsu Ltd 半導体薄膜成長方法
JPH0737819A (ja) * 1993-07-19 1995-02-07 Hitachi Cable Ltd 半導体ウエハ及びその製造方法
JPH0794409A (ja) * 1993-09-20 1995-04-07 Fujitsu Ltd Ｉｉｉ−ｖ族化合物半導体薄膜の形成方法
JPH09162125A (ja) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp 半導体装置，及びその製造方法
WO2004077585A1 (ja) 2003-02-26 2004-09-10 Asahi Kasei Electronics Co., Ltd. 半導体センサ及びその製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF THE SURFACE SCIENCE SOCIETY OF JAPAN, vol. 20, no. 10, 1999, pages 680 - 684
NATIONAL TECHNICAL REPORT, vol. 42, no. 4, 1996, pages 84 - 92
See also references of EP2131398A4

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225870A (ja) * 2009-03-24 2010-10-07 Toshiba Corp 半導体素子
JP2013183132A (ja) * 2012-03-05 2013-09-12 Asahi Kasei Electronics Co Ltd 半導体基板及びその製造方法、並びに半導体装置
JP2014022564A (ja) * 2012-07-18 2014-02-03 Asahi Kasei Corp 化合物半導体基板及びその製造方法
JP2018512739A (ja) * 2015-04-10 2018-05-17 アレグロ・マイクロシステムズ・エルエルシー ホール効果検出素子
JP2020205429A (ja) * 2015-05-01 2020-12-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 表面ブロッキング化学作用を用いた薄膜誘電体の選択的堆積
JP7087031B2 (ja) 2015-05-01 2022-06-20 アプライド マテリアルズ インコーポレイテッド 表面ブロッキング化学作用を用いた薄膜誘電体の選択的堆積
KR20230132760A (ko) * 2015-05-01 2023-09-18 어플라이드 머티어리얼스, 인코포레이티드 표면 블록 화학작용을 이용한 박막 유전체의 선택적 증착
KR102712774B1 (ko) * 2015-05-01 2024-09-30 어플라이드 머티어리얼스, 인코포레이티드 표면 블록 화학작용을 이용한 박막 유전체의 선택적 증착

Also Published As

Publication number Publication date
KR101202073B1 (ko) 2012-11-15
KR20090115215A (ko) 2009-11-04
US8461026B2 (en) 2013-06-11
EP2131398A4 (en) 2011-07-06
US20100090249A1 (en) 2010-04-15
CN101641790A (zh) 2010-02-03
JPWO2008123141A1 (ja) 2010-07-15
EP2131398B1 (en) 2015-05-20
JP5401706B2 (ja) 2014-01-29
CN101641790B (zh) 2011-05-18
EP2131398A1 (en) 2009-12-09

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