WO2008120947A1 - Light emitting device and method for fabricating the same - Google Patents
Light emitting device and method for fabricating the same Download PDFInfo
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- WO2008120947A1 WO2008120947A1 PCT/KR2008/001828 KR2008001828W WO2008120947A1 WO 2008120947 A1 WO2008120947 A1 WO 2008120947A1 KR 2008001828 W KR2008001828 W KR 2008001828W WO 2008120947 A1 WO2008120947 A1 WO 2008120947A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
Definitions
- the embodiment relates to a light emitting device and a method for fabricating the same.
- the LED converts an electric signal into an optical signal using the characteristics of a compound semiconductor.
- the LED comprises a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer which are stacked on a substrate. As the LED is powered on, the active layer emits light.
- the first conductive semiconductor layer may be an N type semiconductor layer and the second conductive semiconductor layer may be a P type semiconductor layer, and vice versa.
- the LED may be broken by backward bias or ESD (electro- static discharge) current
- a device for protecting the LED from the backward bias or ESD current is mounted at the LED in the package process of the LED.
- a Zener diode is properly aligned to prevent the LED from being broken by the backward bias or ESD current.
- mounting the Zener diode in the LED package may be difficult and the cost required for the package process may be increased.
- the embodiment provides a light emitting device and a method for fabricating the same.
- the embodiment provides a light emitting device that comprises a protective device and an LED, and a method for fabricating the same.
- the embodiment provides a light emitting device, in which a protective device and an LED are highly integrated, and a method for fabricating the same.
- a light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer, the second conductive semiconductor layer comprising a first area and a second area; a third conductive semiconductor layer on the second area of the second conductive semiconductor layer; a first electrode layer electrically connecting the first conductive semiconductor layer with the second conductive semiconductor layer of the second area; and a second electrode layer electrically connecting the second conductive semiconductor layer with the third conductive semiconductor layer.
- a light emitting device comprises: a substrate; an LED area comprising a first conductive semiconductor layer, the active layer and a second conductive semiconductor layer on a first area of the substrate; and a protective device area comprising the second conductive semiconductor layer and a third conductive semiconductor layer on a second area of the substrate.
- a method for fabricating a light emitting device comprises: forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; forming a third conductive semiconductor layer on at least a part of the second conductive semiconductor layer; and selectively etching the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer through an etch process and forming an insulating layer in the etched portion, thereby dividing into a first area comprising the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer, and a second area comprising the second and third conductive semiconductor layers.
- the embodiment can provide a light emitting device and a method for fabricating the same.
- the embodiment can provide a light emitting device that comprises a protective device and an LED, and a method for fabricating the same.
- the embodiment can provide a light emitting device, in which a protective device and an LED are highly integrated, and a method for fabricating the same.
- FIG. 1 is a sectional view showing the structure of a light emitting device according to an embodiment
- FIGS. 2 and 3 are sectional views illustrating an operation of a light emitting device according to an embodiment
- FIGS. 4 to 13 are sectional views illustrating a method for fabricating a light emitting device according to one embodiment.
- FIG. 1 is a sectional view showing the structure of a light emitting device according to the embodiment.
- the light emitting device comprises a substrate 110, a buffer layer 112, a first conductive semiconductor layer 120, an active layer 130, a second conductive semiconductor layer 140, a barrier layer 150, an ohmic electrode layer 170, a first electrode layer 190, a second electrode layer 180, an insulating layer 160 and a third conductive semiconductor layer 152.
- the light emitting device according to the embodiment can be divided into an LED area 10 and a protective device area 20 by the insulating layer 160.
- the layers aligned at the left side of the insulating layer 160 are suitable for performing the function of an LED for generating light
- the layers aligned at the right side of the insulating layer 160 are suitable for performing the function of an ESD protective device.
- the LED area 10 which comprises the first conductive semiconductor layer 120, the active layer 130 and the second conductive semiconductor layer 140, performs an LED function of emitting light from the active layer 130 by combination of electrons and holes.
- the first electrode layer 190 is electrically connected with the first conductive semiconductor layer 120 of the LED area 10 and the second conductive semiconductor layer 140 of the protective device area 20.
- the second electrode layer 180 is electrically connected with the second conductive semiconductor layer 140 of the LED area 10 and the third conductive semiconductor layer 152 of the protective device area 20 through the ohmic electrode layer 170.
- the light emitting device comprises the layers, which perform the function of the LED, and the layers, which performs the function of the protective device, on one substrate 110. Further, the light emitting device according to one embodiment comprises the layers, which perform the function of the LED, and the layers, which performs the function of the protective device, on one buffer layer 112. Furthermore, the light emitting device according to one embodiment comprises the layers, which performs the function of the protective device, on the first conductive semiconductor layer 120.
- the LED and the protective device can be formed in a small area, the manufacturing process can be simplified by fabricating the LED together with the protective device.
- electrical connection between the LED and the protective device can be simply achieved, and the package process can be easily performed.
- some layers of the LED area 10, which perform the function of the LED are electrically isolated from some layers of the protective device area 20, which perform the function of the protective device, by the insulating layer 160.
- Some layers of the LED area 10 and the protective device area 20 have sides making contact with the insulating layer 160, and conductive layers are aligned above and below the insulating layer 160.
- the ohmic electrode layer 170 is aligned above the insulating layer 160 and the first conductive semiconductor layer 120 is aligned below the insulating layer 160.
- the light emitting device is divided into the LED area 10 and the protective device area 20 by the insulating layer 160, so that layers of the LED area 10 and the protective device area 20, i.e. the LED and the protective device, can be formed in a small area. Further, a process is added to the LED manufacturing process, so that the LED can be formed together with the protective device.
- the first conductive semiconductor layer 120, the active layer 130 and the second conductive semiconductor layer 140 are vertically aligned in at least a part of the LED area 10, and the second and third conductive semiconductor layers 140 and 152 are vertically aligned in at least a part of the protective device area 20.
- the substrate 110 can comprise at least one selected from the group consisting of Al 2 O 3 , Si, SiC, GaAs, ZnO and MgO.
- the buffer layer 112 reduces the difference between a lattice constant of the substrate
- the buffer layer 112 can have a stack structure such as AlInN/GaN, In x Gai_ x N/GaN or Al x In y Gai_ x _ y N/In x Gai_ x N/GaN.
- an undoped GaN layer may also be formed between the buffer layer 112 and the first conductive semiconductor layer 120.
- the first conductive semiconductor layer 120 can comprise a nitride semiconductor layer containing first conductive impurities.
- the first conductive impurities can comprise N type impurities.
- the active layer 130 can have a single quantum or multi-quantum well structure.
- the active layer 130 can have a stack structure of an InGaN well layer and a GaN barrier layer.
- the second conductive semiconductor layer 140 can comprise a nitride semiconductor layer containing second conductive impurities.
- the second conductive impurities can comprise P type impurities.
- the barrier layer 150 allows electric current to flow through tunneling phenomenon.
- the barrier layer 150 may be selectively formed.
- the second conductive semiconductor layer 140 may directly make contact with the ohmic electrode layer 170.
- the barrier layer 150 can comprise an InGaN layer or the first conductive semiconductor layer, and have a thin thickness of 1OA to 30A.
- the ohmic electrode layer 170 can comprise a transparent electrode layer.
- the ohmic electrode layer 170 can comprise at least one of ITO, ZnO, RuOx, TiOx or IrOx.
- the insulating layer 160 comprises insulating material.
- the insulating layer 160 can comprise an oxide layer. At least a part of the insulating layer 160 is surrounded by the first conductive semiconductor layer 120. The insulating layer 160 makes contact with the active layer 130 and the second conductive semiconductor layer 140.
- the third conductive semiconductor layer 152 can comprise a nitride semiconductor layer containing third conductive impurities.
- the third conductive semiconductor layer 152 can comprise the same impurities as those of the first conductive semiconductor layer 120.
- the third conductive impurities can comprise N type impurities, and the third conductive semiconductor layer 152 can comprise an InGaN layer.
- the third conductive semiconductor layer 152 can have a thickness of IOOOA to
- the third conductive semiconductor layer 152 can make contact with the insulating layer 160.
- the first and second electrode layers 190 and 180 can comprise at least one of Ti, Cr, Ni, Al, Pt or Au.
- FIGS. 2 and 3 are sectional views illustrating an operation of the light emitting device according to the embodiment.
- FIGS. 4 to 13 are sectional views illustrating a method for fabricating the light emitting device according to one embodiment.
- the buffer layer 112 the first conductive semiconductor layer
- the substrate 110 can comprise at least one selected from the group consisting of Al 2
- the buffer layer 112 can be grown in a chamber, in which the substrate 110 is located, by providing TMGa and TMIn of 3 XlO 5 mole per minute and TMAl of 3 XlO
- An undoped GaN layer can be formed between the buffer layer 112 and the first conductive semiconductor layer 120.
- the first conductive semiconductor layer 120 can be formed on the buffer layer 112 by providing SiH 4 containing N type impurities such as Si, NH 3 (3.7X10 2 mole/ minute) and TMGa(1.2X10 4 mole/minute).
- the active layer 130 can be grown on the first conductive semiconductor layer 120 in the nitrogen atmosphere while providing TMGa and TMIn through a MOCVD (metal organic chemical vapor deposition) method.
- MOCVD metal organic chemical vapor deposition
- the barrier layer 150 can be formed on the second conductive semiconductor layer
- a first mask layer A is formed on the barrier layer 150.
- the first mask layer A can be formed in the form of a SiO2 thin film using SiH 4 and O 2 . Then, a part of the first mask layer A is selectively removed through a photolithography process to expose a part of the barrier layer 150.
- the third conductive semiconductor layer 152 is formed on the exposed barrier layer 150.
- the third conductive semiconductor layer 152 for example, comprises an InGaN layer as a semiconductor layer containing N type impurities.
- a second mask layer B is selectively formed on the barrier layer 150 and the third conductive semiconductor layer 152.
- the first conductive semiconductor layer 120, the active layer 130, the second conductive semiconductor layer 140, the barrier layer 150 and the third conductive semiconductor layer 152 are selectively removed through an etch process by using the second mask layer B as a mask. Then, the second mask layer B is removed.
- the insulating layer 160 is selectively formed in a part of an area which is formed through the etch process.
- the active layer 130, the second conductive semiconductor layer 140, the barrier layer 150 and the third conductive semiconductor layer 152 are electrically isolated by the insulating layer 160.
- the ohmic electrode layer 170 is formed on the barrier layer
- the first electrode layer 190 is formed, which is electrically connected with the first conductive semiconductor layer 120, the active layer 130 and the second conductive semiconductor layer 140. Then, the second electrode layer 180 is formed on the ohmic electrode layer 170.
- the light emitting device according to the embodiment can be fabricated.
- the method for fabricating the light emitting device according to the embodiment as described above is illustrative purpose only, and the scope of the present invention is not limited thereto.
- the embodiments can be applied to light emitting devices.
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Abstract
Disclosed is a light emitting device. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, the second conductive semiconductor layer comprising a first area and a second area, a third conductive semiconductor layer on the second area of the second conductive semiconductor layer, a first electrode layer electrically connecting the first conductive semiconductor layer with the second conductive semiconductor layer of the second area, and a second electrode layer electrically connecting the second conductive semiconductor layer with the third conductive semiconductor layer.
Description
Description
LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
Technical Field
[I] The embodiment relates to a light emitting device and a method for fabricating the same.
Background Art [2] Recently, research into an apparatus that uses an LED (light emitting device) as a light emitting device has been actively conducted. [3] The LED converts an electric signal into an optical signal using the characteristics of a compound semiconductor. The LED comprises a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer which are stacked on a substrate. As the LED is powered on, the active layer emits light. [4] The first conductive semiconductor layer may be an N type semiconductor layer and the second conductive semiconductor layer may be a P type semiconductor layer, and vice versa. [5] Since the LED may be broken by backward bias or ESD (electro- static discharge) current, a device for protecting the LED from the backward bias or ESD current is mounted at the LED in the package process of the LED. [6] For example, a Zener diode is properly aligned to prevent the LED from being broken by the backward bias or ESD current. [7] However, since the size of an LED package has become reduced, mounting the Zener diode in the LED package may be difficult and the cost required for the package process may be increased.
Disclosure of Invention
Technical Problem [8] The embodiment provides a light emitting device and a method for fabricating the same. [9] The embodiment provides a light emitting device that comprises a protective device and an LED, and a method for fabricating the same. [10] The embodiment provides a light emitting device, in which a protective device and an LED are highly integrated, and a method for fabricating the same.
Technical Solution
[I I] According to an embodiment, a light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer, the second conductive
semiconductor layer comprising a first area and a second area; a third conductive semiconductor layer on the second area of the second conductive semiconductor layer; a first electrode layer electrically connecting the first conductive semiconductor layer with the second conductive semiconductor layer of the second area; and a second electrode layer electrically connecting the second conductive semiconductor layer with the third conductive semiconductor layer.
[12] According to an embodiment, a light emitting device comprises: a substrate; an LED area comprising a first conductive semiconductor layer, the active layer and a second conductive semiconductor layer on a first area of the substrate; and a protective device area comprising the second conductive semiconductor layer and a third conductive semiconductor layer on a second area of the substrate.
[13] According to an embodiment, a method for fabricating a light emitting device comprises: forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; forming a third conductive semiconductor layer on at least a part of the second conductive semiconductor layer; and selectively etching the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer through an etch process and forming an insulating layer in the etched portion, thereby dividing into a first area comprising the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer, and a second area comprising the second and third conductive semiconductor layers.
Advantageous Effects
[14] The embodiment can provide a light emitting device and a method for fabricating the same. [15] The embodiment can provide a light emitting device that comprises a protective device and an LED, and a method for fabricating the same. [16] The embodiment can provide a light emitting device, in which a protective device and an LED are highly integrated, and a method for fabricating the same.
Brief Description of the Drawings [17] FIG. 1 is a sectional view showing the structure of a light emitting device according to an embodiment; [18] FIGS. 2 and 3 are sectional views illustrating an operation of a light emitting device according to an embodiment; and [19] FIGS. 4 to 13 are sectional views illustrating a method for fabricating a light emitting device according to one embodiment.
Mode for the Invention [20] Hereinafter, a light emitting device and a method for fabricating the same according
to an embodiment will be described with reference to accompanying drawings. The following embodiments are for illustrative purposes only. The scope of the claims of the present invention is not limited thereto.
[21] In the description of an embodiment, it will be understood that, when a layer (or film), a region, a pattern, or a structure is referred to as being "on" or "under" another substrate, another layer (or film), another region, another pad, or another pattern, it can be "directly" or "indirectly" on the other substrate, layer (or film), region, pad, or pattern, or one or more intervening layers may also be present.
[22] Further, the thickness or size of layers shown in the drawings can be simplified or exaggerated for the purpose of clear explanation. In addition, the size of each element may be reduced or magnified from the real size thereof.
[23] FIG. 1 is a sectional view showing the structure of a light emitting device according to the embodiment.
[24] Referring to FIG. 1, the light emitting device according to the embodiment comprises a substrate 110, a buffer layer 112, a first conductive semiconductor layer 120, an active layer 130, a second conductive semiconductor layer 140, a barrier layer 150, an ohmic electrode layer 170, a first electrode layer 190, a second electrode layer 180, an insulating layer 160 and a third conductive semiconductor layer 152.
[25] The light emitting device according to the embodiment can be divided into an LED area 10 and a protective device area 20 by the insulating layer 160. In FIG. 1, the layers aligned at the left side of the insulating layer 160 are suitable for performing the function of an LED for generating light, and the layers aligned at the right side of the insulating layer 160 are suitable for performing the function of an ESD protective device.
[26] In detail, as forward bias is applied to the first and second electrode layers 190 and
180, the LED area 10, which comprises the first conductive semiconductor layer 120, the active layer 130 and the second conductive semiconductor layer 140, performs an LED function of emitting light from the active layer 130 by combination of electrons and holes.
[27] Further, as backward bias is applied to the first and second electrode layers 190 and
180, the protective device area 20, which comprises the second and third conductive semiconductor layers 140 and 152, performs a function of the ESD protective device by providing a path through which electric current flows.
[28] The first electrode layer 190 is electrically connected with the first conductive semiconductor layer 120 of the LED area 10 and the second conductive semiconductor layer 140 of the protective device area 20. The second electrode layer 180 is electrically connected with the second conductive semiconductor layer 140 of the LED area 10 and the third conductive semiconductor layer 152 of the protective device area
20 through the ohmic electrode layer 170.
[29] The light emitting device according to one embodiment comprises the layers, which perform the function of the LED, and the layers, which performs the function of the protective device, on one substrate 110. Further, the light emitting device according to one embodiment comprises the layers, which perform the function of the LED, and the layers, which performs the function of the protective device, on one buffer layer 112. Furthermore, the light emitting device according to one embodiment comprises the layers, which performs the function of the protective device, on the first conductive semiconductor layer 120.
[30] According to the light emitting device of the embodiment, the LED and the protective device can be formed in a small area, the manufacturing process can be simplified by fabricating the LED together with the protective device. In addition, electrical connection between the LED and the protective device can be simply achieved, and the package process can be easily performed.
[31] According to the light emitting device according to one embodiment, some layers of the LED area 10, which perform the function of the LED, are electrically isolated from some layers of the protective device area 20, which perform the function of the protective device, by the insulating layer 160. Some layers of the LED area 10 and the protective device area 20 have sides making contact with the insulating layer 160, and conductive layers are aligned above and below the insulating layer 160. For example, the ohmic electrode layer 170 is aligned above the insulating layer 160 and the first conductive semiconductor layer 120 is aligned below the insulating layer 160.
[32] As described above, the light emitting device is divided into the LED area 10 and the protective device area 20 by the insulating layer 160, so that layers of the LED area 10 and the protective device area 20, i.e. the LED and the protective device, can be formed in a small area. Further, a process is added to the LED manufacturing process, so that the LED can be formed together with the protective device.
[33] The first conductive semiconductor layer 120, the active layer 130 and the second conductive semiconductor layer 140 are vertically aligned in at least a part of the LED area 10, and the second and third conductive semiconductor layers 140 and 152 are vertically aligned in at least a part of the protective device area 20.
[34] Meanwhile, for example, the substrate 110 can comprise at least one selected from the group consisting of Al2O3, Si, SiC, GaAs, ZnO and MgO.
[35] The buffer layer 112 reduces the difference between a lattice constant of the substrate
110 and a lattice constant of the nitride semiconductor layer laminated on the substrate 110. For example, the buffer layer 112 can have a stack structure such as AlInN/GaN, InxGai_xN/GaN or AlxInyGai_x_yN/InxGai_xN/GaN. Further, an undoped GaN layer may also be formed between the buffer layer 112 and the first conductive semiconductor
layer 120.
[36] The first conductive semiconductor layer 120 can comprise a nitride semiconductor layer containing first conductive impurities. For example, the first conductive impurities can comprise N type impurities.
[37] The active layer 130 can have a single quantum or multi-quantum well structure. For example, the active layer 130 can have a stack structure of an InGaN well layer and a GaN barrier layer.
[38] The second conductive semiconductor layer 140 can comprise a nitride semiconductor layer containing second conductive impurities. For example, the second conductive impurities can comprise P type impurities.
[39] When voltage of more than predetermined voltage is applied to the light emitting device, the barrier layer 150 allows electric current to flow through tunneling phenomenon. The barrier layer 150 may be selectively formed. According to another embodiment, the second conductive semiconductor layer 140 may directly make contact with the ohmic electrode layer 170. For example, the barrier layer 150 can comprise an InGaN layer or the first conductive semiconductor layer, and have a thin thickness of 1OA to 30A.
[40] The ohmic electrode layer 170 can comprise a transparent electrode layer. For example, the ohmic electrode layer 170 can comprise at least one of ITO, ZnO, RuOx, TiOx or IrOx.
[41] The insulating layer 160 comprises insulating material. For example, the insulating layer 160 can comprise an oxide layer. At least a part of the insulating layer 160 is surrounded by the first conductive semiconductor layer 120. The insulating layer 160 makes contact with the active layer 130 and the second conductive semiconductor layer 140.
[42] The third conductive semiconductor layer 152 can comprise a nitride semiconductor layer containing third conductive impurities. The third conductive semiconductor layer 152 can comprise the same impurities as those of the first conductive semiconductor layer 120. For example, the third conductive impurities can comprise N type impurities, and the third conductive semiconductor layer 152 can comprise an InGaN layer. The third conductive semiconductor layer 152 can have a thickness of IOOOA to
3000A. The third conductive semiconductor layer 152 can make contact with the insulating layer 160.
[43] The first and second electrode layers 190 and 180, for example, can comprise at least one of Ti, Cr, Ni, Al, Pt or Au.
[44] FIGS. 2 and 3 are sectional views illustrating an operation of the light emitting device according to the embodiment.
[45] Referring to FIG. 2, if forward bias is applied to the light emitting device according
to the embodiment, electric current flows in the first direction Il through the LED area
10. At this time, the electric current does not flow through the protective device area
20. Thus, light is emitted from the active layer 130 of the LED area 10, so that the
LED normally operates. [46] Referring to FIG. 3, if backward bias is applied to the light emitting device according to the embodiment due to an ESD and the like, electric current flows in the second direction 12 through the protective device area 20. At this time, the electric current does not flow through the LED area 10. Thus, the backward bias is applied to the LED area 10, so that the LED can be prevented from being broken. [47] FIGS. 4 to 13 are sectional views illustrating a method for fabricating the light emitting device according to one embodiment. [48] Referring to FIG. 4, the buffer layer 112, the first conductive semiconductor layer
120, the active layer 130, the second conductive semiconductor layer 140 and the barrier layer 150 are sequentially formed on the substrate 110. [49] The substrate 110 can comprise at least one selected from the group consisting of Al2
O3, Si, SiC, GaAs, ZnO and MgO. [50] The buffer layer 112 can be grown in a chamber, in which the substrate 110 is located, by providing TMGa and TMIn of 3 XlO5 mole per minute and TMAl of 3 XlO
6 mole per minute into the chamber together with hydrogen gas and ammonia gas. [51] An undoped GaN layer can be formed between the buffer layer 112 and the first conductive semiconductor layer 120. [52] The first conductive semiconductor layer 120 can be formed on the buffer layer 112 by providing SiH4 containing N type impurities such as Si, NH3 (3.7X102 mole/ minute) and TMGa(1.2X104 mole/minute). [53] The active layer 130 can be grown on the first conductive semiconductor layer 120 in the nitrogen atmosphere while providing TMGa and TMIn through a MOCVD (metal organic chemical vapor deposition) method. [54] The second conductive semiconductor layer 140 can be grown on the active layer
130 by providing TMGa(7X106 mole/minute), TMA1(2.6X1O 5 mole/minute),
(EtCp2Mg){Mg(C2H5C5H4)s}(5.2X10-7 mole/minute) and NH3 (2.2X10 1 mole/minute) by using hydrogen as carrier gas. [55] The barrier layer 150 can be formed on the second conductive semiconductor layer
140 by providing NH3, TMGa and SiH4 containing N type impurities such as Si. [56] Referring to FIG. 5, a first mask layer A is formed on the barrier layer 150. The first mask layer A can be formed in the form of a SiO2 thin film using SiH4 and O2. Then, a part of the first mask layer A is selectively removed through a photolithography process to expose a part of the barrier layer 150. [57] Referring to FIG. 6, the third conductive semiconductor layer 152 is formed on the
exposed barrier layer 150. The third conductive semiconductor layer 152, for example, comprises an InGaN layer as a semiconductor layer containing N type impurities.
[58] Referring to FIG. 7, after forming the third conductive semiconductor layer 152, the first mask layer A is removed.
[59] Referring to FIGS. 8 to 10, a second mask layer B is selectively formed on the barrier layer 150 and the third conductive semiconductor layer 152. Next, the first conductive semiconductor layer 120, the active layer 130, the second conductive semiconductor layer 140, the barrier layer 150 and the third conductive semiconductor layer 152 are selectively removed through an etch process by using the second mask layer B as a mask. Then, the second mask layer B is removed.
[60] Referring to FIG. 11, the insulating layer 160 is selectively formed in a part of an area which is formed through the etch process. The active layer 130, the second conductive semiconductor layer 140, the barrier layer 150 and the third conductive semiconductor layer 152 are electrically isolated by the insulating layer 160.
[61] Referring to FIG. 12, the ohmic electrode layer 170 is formed on the barrier layer
150, the insulating layer 160 and the third conductive semiconductor layer 152.
[62] Referring to FIG. 13, the first electrode layer 190 is formed, which is electrically connected with the first conductive semiconductor layer 120, the active layer 130 and the second conductive semiconductor layer 140. Then, the second electrode layer 180 is formed on the ohmic electrode layer 170.
[63] Accordingly, the light emitting device according to the embodiment can be fabricated. The method for fabricating the light emitting device according to the embodiment as described above is illustrative purpose only, and the scope of the present invention is not limited thereto.
[64] Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. Industrial Applicability
[65] The embodiments can be applied to light emitting devices.
Claims
[1] A light emitting device comprising: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer, the second conductive semiconductor layer comprising a first area and a second area; a third conductive semiconductor layer on the second area of the second conductive semiconductor layer; a first electrode layer electrically connecting the first conductive semiconductor layer with the second conductive semiconductor layer of the second area; and a second electrode layer electrically connecting the second conductive semiconductor layer with the third conductive semiconductor layer.
[2] The light emitting device as claimed in claim 1, comprising an insulating layer that electrically isolates the second conductive semiconductor layer of the second area from the second conductive semiconductor layer of the first area.
[3] The light emitting device as claimed in claim 1, comprising an ohmic electrode layer on the second and third conductive semiconductor layers, wherein the ohmic electrode layer is electrically connected with the second electrode layer.
[4] The light emitting device as claimed in claim 3, comprising a barrier layer formed between the second conductive semiconductor layer and the ohmic electrode layer.
[5] The light emitting device as claimed in claim 4, wherein the barrier layer comprises first conductive impurities.
[6] The light emitting device as claimed in claim 1, comprising a protective device comprising the second conductive semiconductor layer of the second area and the third conductive semiconductor layer.
[7] The light emitting device as claimed in claim 2, wherein a part of the insulating layer is surrounded by the first conductive semiconductor layer.
[8] A light emitting device comprising: a substrate; an LED area comprising a first conductive semiconductor layer, the active layer and a second conductive semiconductor layer on a first area of the substrate; and a protective device area comprising the second conductive semiconductor layer and a third conductive semiconductor layer on a second area of the substrate.
[9] The light emitting device as claimed in claim 8, comprising an insulating layer that isolates the LED area from the protective device area.
[10] The light emitting device as claimed in claim 8, wherein the LED area and the
protective device area are formed on one substrate.
[11] The light emitting device as claimed in claim 8, comprising a buffer layer formed between the substrate and the LED area and between the substrate and the protective device area, wherein the LED area and the protective device area are formed on one buffer layer.
[12] The light emitting device as claimed in claim 8, wherein the protective device area is formed on the first conductive semiconductor layer of the LED area.
[13] The light emitting device as claimed in claim 8, comprising: a first electrode layer electrically connected with the first conductive semiconductor layer of the LED area and the second conductive semiconductor layer of the protective device area; and a second electrode layer electrically connected with the second conductive semiconductor layer of the LED area and the third conductive semiconductor layer of the protective device area.
[14] The light emitting device as claimed in claim 8, comprising a barrier layer on the second conductive semiconductor layer of the LED area.
[15] The light emitting device as claimed in claim 8, wherein the first and third conductive semiconductor layers comprise N type impurities and the second conductive semiconductor layer comprises P type impurities.
[16] A method for fabricating a light emitting device, the method comprising: forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; forming a third conductive semiconductor layer on at least a part of the second conductive semiconductor layer; and selectively etching the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer through an etch process and forming an insulating layer in the etched portion, thereby dividing into a first area comprising the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer, and a second area comprising the second and third conductive semiconductor layers.
[17] The method as claimed in claim 16, comprising: electrically connecting the first conductive semiconductor layer with the second conductive semiconductor layer of the second area; and electrically connecting the second conductive semiconductor layer of the first area with the third conductive semiconductor layer.
[18] The method as claimed in claim 16, wherein a part of the third conductive semiconductor layer on the second conductive semiconductor layer is etched through the etch process.
[19] The method as claimed in claim 16, wherein the insulating layer makes contact with the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer. [20] The method as claimed in claim 16, wherein the step of forming the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer is performed on one substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008800021091A CN101584054B (en) | 2007-04-02 | 2008-04-01 | Light emitting device and method for fabricating the same |
| US12/522,823 US8164105B2 (en) | 2007-04-02 | 2008-04-01 | Light emitting device and method for fabricating the same |
| JP2010502016A JP2010524226A (en) | 2007-04-02 | 2008-04-01 | Light emitting device and manufacturing method thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070032550A KR20080089859A (en) | 2007-04-02 | 2007-04-02 | Nitride semiconductor light emitting device and manufacturing method thereof |
| KR10-2007-0032550 | 2007-04-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008120947A1 true WO2008120947A1 (en) | 2008-10-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2008/001828 Ceased WO2008120947A1 (en) | 2007-04-02 | 2008-04-01 | Light emitting device and method for fabricating the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8164105B2 (en) |
| JP (1) | JP2010524226A (en) |
| KR (1) | KR20080089859A (en) |
| CN (1) | CN101584054B (en) |
| WO (1) | WO2008120947A1 (en) |
Cited By (4)
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| US20110198621A1 (en) * | 2010-02-18 | 2011-08-18 | Choi Kwang Ki | Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system |
| WO2019057830A1 (en) * | 2017-09-25 | 2019-03-28 | Osram Opto Semiconductors Gmbh | ELECTRONIC COMPONENT |
| US10615221B2 (en) | 2011-08-31 | 2020-04-07 | Micron Technology, Inc. | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
| US10937776B2 (en) | 2011-08-31 | 2021-03-02 | Micron Technology, Inc. | Solid state transducers with state detection, and associated systems and methods |
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| KR101066436B1 (en) * | 2010-11-10 | 2011-09-23 | 한국과학기술원 | Optical device and manufacturing method thereof |
| CN102315353B (en) * | 2011-09-30 | 2013-05-22 | 安徽三安光电有限公司 | Inverted integrated LED and production method thereof |
| CN104813489B (en) * | 2012-11-23 | 2018-01-02 | 首尔伟傲世有限公司 | Light emitting diode and its manufacture method |
| CN103606613B (en) * | 2013-11-12 | 2016-04-13 | 华灿光电(苏州）有限公司 | Inverted light-emitting diode (LED) with symmetry electrode and preparation method thereof |
| KR102075984B1 (en) | 2013-12-06 | 2020-02-11 | 삼성전자주식회사 | Semiconductor light emitting device and semiconductor light emitting apparatus having the same |
| TWI794380B (en) * | 2018-12-24 | 2023-03-01 | 晶元光電股份有限公司 | Semiconductor device |
| CN113363359A (en) * | 2021-06-09 | 2021-09-07 | 泉州三安半导体科技有限公司 | Flip-chip light emitting diode |
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- 2008-04-01 US US12/522,823 patent/US8164105B2/en not_active Expired - Fee Related
- 2008-04-01 WO PCT/KR2008/001828 patent/WO2008120947A1/en not_active Ceased
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| US10615221B2 (en) | 2011-08-31 | 2020-04-07 | Micron Technology, Inc. | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
| US10937776B2 (en) | 2011-08-31 | 2021-03-02 | Micron Technology, Inc. | Solid state transducers with state detection, and associated systems and methods |
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Also Published As
| Publication number | Publication date |
|---|---|
| US8164105B2 (en) | 2012-04-24 |
| US20100038672A1 (en) | 2010-02-18 |
| CN101584054A (en) | 2009-11-18 |
| KR20080089859A (en) | 2008-10-08 |
| JP2010524226A (en) | 2010-07-15 |
| CN101584054B (en) | 2011-05-11 |
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