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WO2008119949A1 - Procédé et appareil destinés à l'élimination laser d'un matériau de revêtement, le faisceau laser traversant le substrat en direction du matériau de revêtement, et affichage à écran plat muni d'un matériau de revêtement éliminé de la sorte - Google Patents

Procédé et appareil destinés à l'élimination laser d'un matériau de revêtement, le faisceau laser traversant le substrat en direction du matériau de revêtement, et affichage à écran plat muni d'un matériau de revêtement éliminé de la sorte Download PDF

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Publication number
WO2008119949A1
WO2008119949A1 PCT/GB2008/001062 GB2008001062W WO2008119949A1 WO 2008119949 A1 WO2008119949 A1 WO 2008119949A1 GB 2008001062 W GB2008001062 W GB 2008001062W WO 2008119949 A1 WO2008119949 A1 WO 2008119949A1
Authority
WO
WIPO (PCT)
Prior art keywords
coating
coating material
laser
substrate
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2008/001062
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English (en)
Inventor
Paul Harrison
Jozef Wendland
Matthew Henry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Powerlase Ltd
Original Assignee
Powerlase Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerlase Ltd filed Critical Powerlase Ltd
Publication of WO2008119949A1 publication Critical patent/WO2008119949A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/22—Applying luminescent coatings
    • H01J9/227—Applying luminescent coatings with luminescent material discontinuously arranged, e.g. in dots or lines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix

Definitions

  • This invention relates to a method and apparatus for removing coating material from a coated substrate.
  • the invention relates to a method and apparatus for patterning thin films using laser techniques.
  • Patterned thin films are widely-used in Flat Panel Displays (FPDs) such as Liquid Crystal Displays and Plasma Display Panels.
  • FPDs Flat Panel Displays
  • One patterned thin film that is common in Liquid Crystal Displays is "Black Matrix”.
  • Black matrix is a high optical density material which is patterned with apertures to provide a template for the colour elements constituting the pixels.
  • Patterning of thin films, including "Black Matrix” is currently achieved using the technique of wet-etch lithography.
  • wet-etching of "Black Matrix” does not produce patterns of satisfactory quality for some applications in terms of the quality of the edges of the patterned region.
  • wet-etching is a very expensive process with high consumable costs and a demand exists for improved methods.
  • Laser patterning is one such alternative but known approaches are inefficient and problematic, as also described in more detail below.
  • ITO Indium Tin Oxide
  • This ablation technique may replace more expensive wet-etch lithography techniques which use chemical means.
  • Black Matrix has very different optical and material properties to ITO and much thicker coatings are typically used, Therefore, much more laser energy is required to pattern "Black Matrix" and the quality of the resulting pattern does not meet current industry standards.
  • a laser beam is f ⁇ ri i ⁇ prl to a f ⁇ np ⁇ ?nr>t tn rqn cp nV>1 qtinii nf film m ateri al Tn nr ⁇ pr to ⁇ pl prtivpl v remove material, the laser beam and film are moved relative to one another. By rapidly moving the laser beam across the substrate, it becomes possible to pattern the thin film quickly.
  • FIG. 1 One such known method for direct laser ablation of thin films is shown in Fig. 1.
  • the memepose of the substrate 103 is merely to support the thin film 101 and the laser light 107 is incident directly on to the thin film 101.
  • a pattern 109 corresponding with the ablated regions is formed.
  • the beam is imaged onto the target by employing a mask to create a complex image plane at the workpiece.
  • the technique of directly ablating a thin film using a laser in this way is well known - see, for example: Lunney, J. G., O'Neill, R. R., Schulmeister, K., (1991) Excimer laser etching of transparent conducting oxides, Journal of Applied Physics Letters, Vol. 59, No. 6 pp.647-649; Takai, M., Bollmann, D., Haberger, K., (1994) Maskless patterning of indium tin oxide layer for flat panel displays by diode-pumped Nd: YLF laser irradiation, Journal of Applied Physics Letters, Vol.
  • Fig. 2 shows in cross-section the geometry of patterned regions that can form in "Black Matrix” using prior art methods.
  • Fig. 2 A shows an exposed portion 201 in a thin film of "Black Matrix" 203 supported on a substrate 205 wherein the wall 207 of the exposed portion 201 is tapered giving rise to a trapezoid shape.
  • the width B of the exposed portion 201 varies with the depth of film 203 since the top (as shown in Fig. 2A) of the exposed area has been preferentially removed.
  • the ablated region is 70 x 270 ⁇ m
  • the thickness of film is 1-2 ⁇ m
  • the taper distance A is 2 to 5 ⁇ m.
  • Fig. 2B shows an alternative case which may result from wet-etch lithography wherein material on the substrate-side of the exposed portion 211 has been preferentially removed.
  • the width of the exposed portion 211 varies with the depth of the film 213 but the side walls are tapered in the opposite direction.
  • Fig. 2C shows a further alternative case which may result from wet-etch lithography wherein the resultant sidewalls of the exposed portion 221 are parallel.
  • the cross-section of the apertures as shown in Figs 2 A, 2B and 2C give rise to problems in some applications.
  • an array of these apertures may be used in the flat panel display industry as an optical filter wherein each aperture corresponds to a pixel.
  • the taper When illuminated from above or below, as orientated in Figs 2, the taper causes variable light transmission, edge blurring and/or diminished edge contrast. This adversely affects the size of the pixel and the contrast.
  • the surface roughness of the side wall is important since this also affects edge contrast.
  • Prior art laser methods for producing apertures in "Black Matrix" produce side walls with unsatisfactory surface roughness and tapering.
  • Figs 2A, 2B and 2C can affect the mechanical stability of the film at the edge and/or the resolution of the resultant FPD such that existing methods for laser patterning ITO are inadequate for "Black Matrix".
  • the invention is set out in the claims.
  • the claimed invention provides an improved technique for rapid laser patterning (also known as Laser Direct
  • the claimed invention significantly enhances the quality of thin film removal from transparent substrates by comparison to known techniques.
  • the side walls of the resulting apertures show significantly reduced roughness and tapering.
  • residue and debris in the region of ablation is reduced as a result of the processing.
  • Fig. 1 is a schematic of a known technique for laser ablation of thin films
  • Figs. 2A, 2B and 2C show cross-sections of apertures in "Black Matrix" that may result using prior art methods
  • Fig. 3 shows a first embodiment of the present invention wherein a small region of the thin film at the film-substrate interface is vaporised
  • Fig. 4 is a schematic of the material removal mechanism according to embodiments of the present invention.
  • Fig. 5 shows a schematic of the translation means according to embodiments of the present invention
  • Fig. 6 shows a second embodiment of the present invention wherein the thin film is held in contact with a fluid
  • Fig. 7 shows a third embodiment wherein fluid is sprayed onto the film
  • Fig. 8 is a schematic of a system for processing the laser beam
  • Fig. 9 shows a patterned substrate.
  • the present invention provides a technique for removing coating or deposited material, for example by selective laser-ablation from a coated substrate comprising, for example, a thin film supported by a transparent substrate by directing a laser beam through the substrate toward the coating or deposited material, for example, onto the substrate-film interface.
  • the film absorbs the laser energy and forms a hot gas by vaporisation which expands and ejects or drives the remaining depth of film away from the substrate leaving an exposed area of substrate which is found to have better edge quality and less tapering.
  • Laser pulse 305 is directed in the direction of arrow A, for example by being focussed or imaged, through substrate 301 onto the interface 307 between the thin film 303 and the substrate 301.
  • the first embodiment is shown in operation in Figs 4A, 4B and 4C.
  • Fig. 4A there is shown a focused laser pulse 405 travelling in the direction of arrow A through substrate 401.
  • the opposite face of substrate 401 is coated with a thin film of "Black Matrix" 403.
  • the thin film may be have been coated, deposited, grown or applied on the substrate by any suitable method.
  • Substrate 401 is, at least, partially transparent at the laser wavelength and so beam 405 is incident upon thin film 403 at the interface between the substrate 401 and film 403.
  • the laser energy is absorbed within a thin region 407 of film 403 at the interface.
  • the temperature of thin region 407 is raised beyond the vaporisation point of the film 403 by laser pulse 405 such that a high pressure region 411 comprising trapped gas is confined between the remaining depth of film 403 and substrate 401.
  • This pressure build-up eventually causes the remaining depth of film 403 to be ejected 415 away from the substrate, as shown in Fig. 4C, to leave behind an ablated region 417.
  • the majority of film material is not vaporised and, instead, is driven off by the expansion of the underlying gas.
  • the thickness of coating removed is greater than the absorption depth of the coating at the laser wavelength.
  • the high pressure region 411 at the interface between substrate 401 and film 403 is vaporised resulting in a region of high pressure gas constrained between the substrate 401 and film 403.
  • This region 411 expands explosively against the area of least resistance (i.e. the region of thin film 403 between the region 411 and atmosphere) and so the thin film is removed explosively.
  • the material removal mechanism is different to, for example, the mechanism shown in Fig. 1.
  • the laser, substrate, film and coating may take any appropriate form.
  • a pulsed laser is most suitable, for example, the Starlase AO4 laser from Powerlase Ltd, Crawley, UK which produces radiation at a wavelength of 1064 nm.
  • the nominal power is 400 W with a pulse width of 20-200 ns (Full-wave Half Maximum) and a maximum repetition rate of 3-50 KHz.
  • Any substrate with a degree of transparency at the laser wavelength is suitable for this application. In most applications, such a flat panel display processing, it will be important to ensure the substrate is not damaged by the laser pulses.
  • the substrate can be soda-lime glass with a thickness of 0.25 to 5.00 mm as available from Coming or Asahi Glass, for example.
  • Any thin film capable of absorbing sufficient laser radiation is suitable. As the skilled reader will understand, suitability will depend on many properties of the thin film such as the melting temperature and latent heat of vaporisation of the composite material. Any thin film which absorbs a portion of the laser pulse and can thereby form a high pressure gas may be suitable.
  • the thin film can be 0.05 ⁇ m to 10 ⁇ m thick or, more preferably, 1 to 2 ⁇ m thick.
  • the coating can be "Black Matrix".
  • the coating can be a metal, such as aluminium or magnesium, or a semi-conductor such as a metal oxide like Indium Tin Oxide (ITO) having a thickness in the range 0.02 to 0.50 ⁇ m.
  • the coating may be a plastic or another type of organic material.
  • any appropriate patterning / translation technique can be adopted in order to remove coating material from an extended area or from multiple areas of the coating, for example, by moving the laser relative to the substrate or moving the substrate relative to the laser.
  • the substrate may be mounted on an X-Y translation stage or the laser beam may be moved in between pulses by translating the imaging optics.
  • a pair of beam-steering mirrors are used to achieve beam translation as shown in Fig. 5. Referring to Fig. 5, there is shown a laser beam 501 entering a scanner 503 comprising two beam-steering mirrors 505 to controllable adjust the path of the laser beam.
  • a flat-field lens 507 focuses the translated beam onto a target 509 to produce an ablation pattern 511.
  • any pattern can be created by controlling the movement of the laser relative to the target.
  • the pattern could comprise an entire area such that material is removed to obtain a predetermined geometry or shape such as holes or edges.
  • the amount of coating material removed is related to the size of the image plane.
  • the maximum area of the removed portion is only limited by the available laser power density.
  • the laser power density must be sufficient to produce a region of vaporised film material with a pressure sufficient to eject the full depth of film away from the bulk film.
  • FIG. 6 there is shown a second embodiment of the present invention.
  • the system comprises a planar substrate 603 coated on a first face with an absorbing film 601 wherein the film 601 is in contact with a containment fluid 605 such as liquid.
  • a laser beam 607 is directed through the non-coated second face of substrate 603 onto the substrate-film interface 609. Film is ejected from the substrate in accordance with the first embodiment.
  • the fluid acts in two ways which further improve the material removal process. Firstly, the fluid significantly reduces or eliminates debris and residue by solvating some of the ablated material and flushing away particulate. This reduces the amount of vaporised film that re-condenses on other parts of the film and/or substrate. Furthermore, the fluid constrains the lateral material removal as the film is ejected away from the bulk, resulting in much reduced edge taper and edge variation. In particular, this leads to a significant reduction in the roughness of the side walls of the exposed area. Since the film is irradiated through the substrate, embodiments according to the present invention gives rise to the added advantage that the laser beam does not have to pass through the fluid. This reduces energy loss owing to absorption by the water and minimises variations in at the image plane owing to lensing effects and local variations in refractive index within the water.
  • the fluid could also be sprayed across the film during machining in any appropriate manner.
  • this can be achieved using approaches disclosed in: US20070000875A1 Coherent; WO03028943A1 Lambda Physik; WO03028941A1 Scaggs; and US20030062126A1 Scaggs.
  • WO05120763A2 also Exitech/Sony also discloses a method of laser processing of a substrate underwater in a turbulent flow to enhance material removal and improve the quality of the resulting features.
  • the substrate is contained within a vessel containing turbulent water.
  • this means that the laser beam has to pass through the fluid before reaching the film. All of these disclosures are incoiporated herein by reference.
  • a pressurised liquid spray creates a local flow across the surface of the substrate which further reduces debris and residue. This is because the fluid acts to flush the vapour and particulate away from the substrate.
  • a solvating fluid may be used to enhance removal of the vaporised material.
  • a laser beam 707 directed through the uncoated side of substrate 703 onto the thin film 701.
  • a device 711 sprays liquid 705 onto the interface 709 between substrate 703 and film 701. This leaves a region 713 where the coating material has been removed from the substrate.
  • a Powerlase A04 laser having a laser fluence of 1 J/cm" in 35 ns pulse, was used to create an array / pattern of 70 x 270 ⁇ m rectangular apertures in a 1 ⁇ m thick coating of "Black Matrix" supported on a soda-lime substrate.
  • the array / pattern was created by adjusting the beam delivery optics during processing.
  • the extent of the tapering may be measured by the linear distance A shown in Fig. 2A.
  • the tapering distance A achieved by the prior art laser method shown in Fig. 1 is 2-5 ⁇ m and a laser fluence of 6 J/cm 2 at 35 ns would be required to achieve this.
  • a laser fluence of 0.1 to 50 J/cm 2 in 1 to 200 ns achieves a tapering distance of 0.55 ⁇ m +/- 0.10 ⁇ m (Standard Deviation) with a straightness of +/- 0.25 ⁇ m (standard deviation from a straight line) as measured over a length of 290 ⁇ m.
  • the laser fliience is 0.5 to 2.0 J/cm 2 and the pulse duration is 20 to 50 ns.
  • the laser and substrate may be oriented with either the laser coming down on the workpiece with the water jet from beneath with substrate held vertically or in any other orientation.
  • the liquid is introduced using a jet or jets, or by immersion.
  • a jet or jets or by immersion.
  • the laser beam is delivered by an optical fibre 801.
  • the output 803 from the fibre 801 is collimated by a collimating lens 805 and passed through a homogeniser 807 and mask 809.
  • a scanning lens 811 images the beam onto the target 813. This results in an ablated image at the target 813.
  • the laser beam illuminates an area encompassing at least the mask. As shown in Fig. 9, this can be used to create an array 901 of ablated images 903 onto the target.
  • Embodiments according to the present invention significantly enhance the quality of the thin film removal from transparent substrates by comparison with conventional rapid laser processing and other processes such as wet-etch lithography.
  • Embodiments of the present invention offer improvements to resulting patterned thin film quality in terms of: edge taper; edge variation; edge straightness; reduced debris; and residue.
  • edge taper edge taper
  • edge variation edge straightness
  • reduced debris debris
  • residue residue
  • the transmissivity of the ablated region is more uniform over its area owing to better defined edges.
  • these embodiments may allow the resolution of finer features on the thin film than is possible by other known techniques, for example, in the manufacture of high definition LCD displays.
  • Embodiments according to the present invention offer advantages particularly for relatively thick films of "Black Matrix".
  • a Black Matrix film 1-2 ⁇ m thick the optical absorption depth is much less than the film thickness but the full depth of film can be explosively-driven off by the method described with reference to Fig. 4.
  • Fig. 1 using the known approach as shown in Fig. 1 , either multiple pulses or very high energy pulses are required to remove all the thin film. Therefore, embodiments of the present invention require significantly less energy than the previously known method to remove the same volume of material. This leads to improved productivity and material removal rate.
  • embodiments of the present invention do not use harmful chemicals and so the process is environmentally benign.
  • the liquid may be deionised or otherwise cleaned water thereby easily recyclable and low cost.
  • Embodiments of the present invention are more energy efficient than for other known rapid laser processing and so offer productivity or cost improvements.
  • Embodiments according to the present invention require approximately 1 J/cm 2 only per laser pulse to produce the high-quality pattern discussed in this application.
  • the known approach of directly ablating coatings of ITO typically requires 3 J/cm 2 .
  • the process benefit is not derived from a chemical reaction and so does not affect the thin film or substrate.
  • As the process is self-cleaning it may eliminate or reduce the need for subsequent cleaning stages in manufacture.
  • This technique results in unprecedented quality achieved for Black Matrix processing and is applicable to patterning all thin films on nano- & micro-scale where quality enhancements are sought. It also proves to be more energy efficient than conventional laser processing in some cases - resulting in potential productivity/cost enhancements.
  • the use of water adds to the attraction in that no chemicals are required and so this approach is environmentally preferable to patterning using wet-etch lithography.
  • inventions of the present invention could be applied to any thin film on any transparent substrate.
  • the method is applicable to any thin film patterning where the thin film is at least partially absorbing and the substrate is at least partially transmissive at the laser wavelength.
  • the process may apply to thin films on both the nano- and the micro-scale.
  • the process is applicable to any absorbing thin film, and so is highly flexible and may be applied to organics, semi-conductors and metals
  • Embodiments of the present invention are particularly suitable for patterning thin films for the Displays sector (for example, patterning Black Matrix on glass for LCD manufacture). However, it could be applied for any thin films on transparent substrates of any kind. It is also applicable to thin film processing on flexible substrates for next generation flexible displays. It would be relevant to all display types including LCD, PDP, OLED and SED. However, this technique can be applied to any thin film application with a transparent substrate, and so would be relevant to patterning thin films for solar cell applications and also semiconductors applications.
  • Embodiments of the present invention use a laser operating at a wavelength of 1064 nni but the skilled reader will appreciate that any wavelength laser from vacuum ultraviolet to far infrared could be used so long as the thin film is at least partially absorbing and the substrate is at least partially transmissive.
  • the laser described in the embodiments is unpolarised, however a polarised light source will work just as well.
  • the beam is imaged using a homogeniser and mask. However, as the skilled reader will appreciate, this process may also work well using different beam shaping techniques or simple focussing.
  • a common solvent such as methanol could be used instead of water or a pressurised gas such as an inert gas.
  • additives can be added to the liquid to enhance the liquid performance, for example, to aid material removal or enhance debris solvation.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention concerne un procédé qui permet d'éliminer un matériau de revêtement (303) afin de former un motif dans un substrat (301) muni dudit matériau de revêtement. Le procédé précité consiste à diriger un faisceau laser (305) à travers le substrat (301) de façon à éliminer une région (307) du revêtement (303) à l'interface entre le revêtement et le substrat, produisant de la sorte un matériau de revêtement vaporisé confiné (303) qui entraîne l'élimination d'une région susjacente du matériau de revêtement présent sur le substrat (301).
PCT/GB2008/001062 2007-03-30 2008-03-27 Procédé et appareil destinés à l'élimination laser d'un matériau de revêtement, le faisceau laser traversant le substrat en direction du matériau de revêtement, et affichage à écran plat muni d'un matériau de revêtement éliminé de la sorte Ceased WO2008119949A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0706287.0 2007-03-30
GBGB0706287.0A GB0706287D0 (en) 2007-03-30 2007-03-30 A laser method and apparatus

Publications (1)

Publication Number Publication Date
WO2008119949A1 true WO2008119949A1 (fr) 2008-10-09

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PCT/GB2008/001062 Ceased WO2008119949A1 (fr) 2007-03-30 2008-03-27 Procédé et appareil destinés à l'élimination laser d'un matériau de revêtement, le faisceau laser traversant le substrat en direction du matériau de revêtement, et affichage à écran plat muni d'un matériau de revêtement éliminé de la sorte

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EP2426550A4 (fr) * 2009-04-30 2013-04-03 Sharp Kk Procédé de fabrication de panneau à cristaux liquides, substrat en verre de panneau à cristaux liquides et panneau à cristaux liquides doté du substrat en verre de panneau à cristaux liquides
WO2013068471A1 (fr) 2011-11-09 2013-05-16 Institutt For Energiteknikk Procédé et appareil pour l'ablation d'un diélectrique d'un substrat semi-conducteur
CN101733260B (zh) * 2008-11-26 2014-06-11 三樱工业株式会社 树脂包覆金属管的包覆树脂层除去方法
WO2014114908A1 (fr) * 2013-01-22 2014-07-31 M-Solv Limited Procédé et appareil de formation de motifs dans des revêtements sur les côtés opposés d'un substrat transparent
WO2016054590A1 (fr) 2014-10-03 2016-04-07 Gentex Corporation Ablation laser de seconde surface
WO2017062423A1 (fr) * 2015-10-07 2017-04-13 Corning Incorporated Procédé de préparation au laser d'un substrat revêtu destiné à être découpé au laser
WO2018054569A1 (fr) * 2016-09-23 2018-03-29 Tata Steel Nederland Technology B.V. Procédé et agencement pour la texturation laser assistée par liquide d'une bande d'acier mobile
CN108351564A (zh) * 2015-06-19 2018-07-31 金泰克斯公司 第二表面激光烧蚀
WO2019143449A1 (fr) * 2018-01-18 2019-07-25 Gentex Corporation Ablation par laser de garnissage hexagonal
US11009760B2 (en) 2017-05-05 2021-05-18 Gentex Corporation Interleaving laser ablation
US11130195B2 (en) 2014-07-29 2021-09-28 Gentex Corporation Laser ablation with reduced visual effects

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US10610975B2 (en) 2014-10-03 2020-04-07 Gentex Corporation Second surface laser ablation
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CN108351564A (zh) * 2015-06-19 2018-07-31 金泰克斯公司 第二表面激光烧蚀
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CN108136543A (zh) * 2015-10-07 2018-06-08 康宁股份有限公司 将要被激光切割的经过涂覆的基材的激光预处理方法
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US11904410B2 (en) 2015-10-07 2024-02-20 Corning Incorporated Laser surface preparation of coated substrate
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US11607749B2 (en) 2016-09-23 2023-03-21 Tata Steel Nederland Technology B.V. Method and arrangement for the liquid-assisted laser texturing of moving steel strip
US11009760B2 (en) 2017-05-05 2021-05-18 Gentex Corporation Interleaving laser ablation
WO2019143449A1 (fr) * 2018-01-18 2019-07-25 Gentex Corporation Ablation par laser de garnissage hexagonal
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