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WO2008114564A1 - 薄膜トランジスタ及び薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタ及び薄膜トランジスタの製造方法 Download PDF

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Publication number
WO2008114564A1
WO2008114564A1 PCT/JP2008/052833 JP2008052833W WO2008114564A1 WO 2008114564 A1 WO2008114564 A1 WO 2008114564A1 JP 2008052833 W JP2008052833 W JP 2008052833W WO 2008114564 A1 WO2008114564 A1 WO 2008114564A1
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WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
semiconductor layer
electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052833
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English (en)
French (fr)
Inventor
Takeshi Asano
Taishi Takenobu
Masashi Shiraishi
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Brother Industries Ltd
Original Assignee
Brother Industries Ltd
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Filing date
Publication date
Application filed by Brother Industries Ltd filed Critical Brother Industries Ltd
Publication of WO2008114564A1 publication Critical patent/WO2008114564A1/ja
Priority to US12/383,523 priority Critical patent/US8030139B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H10P72/0448—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

ボトムゲート型の薄膜トランジスタを製造する場合、基板上にゲート電極を形成した後（Ｓ１１）、当該ゲート電極を覆うように基板上にゲート絶縁層を形成する（Ｓ１２）。続いて、ゲート絶縁層上に、ソース電極及びドレイン電極を形成し（Ｓ１３）、当該ソース電極とドレイン電極との間に、シングルウォールカーボンナノチューブを含む半導体層を形成する（Ｓ１４）。半導体層の形成は、半導体層形成用の水溶液を、インクジェット法等の塗布法により塗布することにより行う。半導体層形成用の水溶液中では、界面活性剤により被覆されたシングルウォールカーボンナノチューブが、均一に分散している。
PCT/JP2008/052833 2007-02-21 2008-02-20 薄膜トランジスタ及び薄膜トランジスタの製造方法 Ceased WO2008114564A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/383,523 US8030139B2 (en) 2007-02-21 2009-03-25 Thin film transistor and method of producing thin film transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-040679 2007-02-21
JP2007040679 2007-02-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/383,523 Continuation-In-Part US8030139B2 (en) 2007-02-21 2009-03-25 Thin film transistor and method of producing thin film transistor

Publications (1)

Publication Number Publication Date
WO2008114564A1 true WO2008114564A1 (ja) 2008-09-25

Family

ID=39765677

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PCT/JP2008/052833 Ceased WO2008114564A1 (ja) 2007-02-21 2008-02-20 薄膜トランジスタ及び薄膜トランジスタの製造方法

Country Status (3)

Country Link
US (1) US8030139B2 (ja)
JP (1) JP2008235880A (ja)
WO (1) WO2008114564A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010056568A1 (en) * 2008-11-14 2010-05-20 3M Innovative Properties Company Off-center deposition of organic semiconductor in an organic semiconductor device
US7948016B1 (en) 2009-11-03 2011-05-24 3M Innovative Properties Company Off-center deposition of organic semiconductor in an organic semiconductor device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101582446B (zh) * 2008-05-14 2011-02-02 鸿富锦精密工业（深圳）有限公司 薄膜晶体管
CN101582451A (zh) * 2008-05-16 2009-11-18 清华大学 薄膜晶体管
CN101593699B (zh) * 2008-05-30 2010-11-10 清华大学 薄膜晶体管的制备方法
CN101582382B (zh) * 2008-05-14 2011-03-23 鸿富锦精密工业（深圳）有限公司 薄膜晶体管的制备方法
CN101582449B (zh) * 2008-05-14 2011-12-14 清华大学 薄膜晶体管
CN101582445B (zh) * 2008-05-14 2012-05-16 清华大学 薄膜晶体管
CN101582448B (zh) * 2008-05-14 2012-09-19 清华大学 薄膜晶体管
CN101599495B (zh) * 2008-06-04 2013-01-09 清华大学 薄膜晶体管面板
CN101582447B (zh) 2008-05-14 2010-09-29 清华大学 薄膜晶体管
CN101582450B (zh) * 2008-05-16 2012-03-28 清华大学 薄膜晶体管
CN101587839B (zh) 2008-05-23 2011-12-21 清华大学 薄膜晶体管的制备方法
CN101582444A (zh) 2008-05-14 2009-11-18 清华大学 薄膜晶体管
JPWO2011111736A1 (ja) 2010-03-10 2013-06-27 日本電気株式会社 電界効果型トランジスタ及びその製造方法
TWI445180B (zh) * 2011-09-28 2014-07-11 E Ink Holdings Inc 陣列基板及使用其之顯示裝置
CN104112777B (zh) * 2013-04-16 2017-12-19 清华大学 薄膜晶体管及其制备方法
CN108365095A (zh) * 2017-09-30 2018-08-03 广东聚华印刷显示技术有限公司 薄膜晶体管及其制备方法
KR20210134616A (ko) * 2019-01-04 2021-11-10 아톰 에이치투오, 엘엘씨 탄소 나노튜브 기반 무선 주파수 장치

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WO2005027226A1 (ja) * 2003-09-12 2005-03-24 Sony Corporation 電界効果半導体装置の製造方法
JP4834950B2 (ja) 2003-09-12 2011-12-14 ソニー株式会社 電界効果半導体装置の製造方法
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JP2004071654A (ja) * 2002-08-01 2004-03-04 Semiconductor Energy Lab Co Ltd カーボンナノチューブ半導体素子の作製方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010056568A1 (en) * 2008-11-14 2010-05-20 3M Innovative Properties Company Off-center deposition of organic semiconductor in an organic semiconductor device
US7948016B1 (en) 2009-11-03 2011-05-24 3M Innovative Properties Company Off-center deposition of organic semiconductor in an organic semiconductor device

Also Published As

Publication number Publication date
US8030139B2 (en) 2011-10-04
JP2008235880A (ja) 2008-10-02
US20090224292A1 (en) 2009-09-10

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