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WO2008114311A1 - Low-noise amplifier - Google Patents

Low-noise amplifier Download PDF

Info

Publication number
WO2008114311A1
WO2008114311A1 PCT/JP2007/000242 JP2007000242W WO2008114311A1 WO 2008114311 A1 WO2008114311 A1 WO 2008114311A1 JP 2007000242 W JP2007000242 W JP 2007000242W WO 2008114311 A1 WO2008114311 A1 WO 2008114311A1
Authority
WO
WIPO (PCT)
Prior art keywords
source
grounded transistor
gate
drain
feeding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/000242
Other languages
French (fr)
Japanese (ja)
Inventor
Takuji Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2009504904A priority Critical patent/JPWO2008114311A1/en
Priority to PCT/JP2007/000242 priority patent/WO2008114311A1/en
Publication of WO2008114311A1 publication Critical patent/WO2008114311A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Provided is a low-noise amplifier comprising a source-grounded transistor (M1) having a gate, to which a high-frequency input signal is inputted, a gate-grounded transistor (M2) having a source, to which the high-frequency signal of the drain of the source-grounded transistor is inputted, a load resonance circuit (LoCo) interposed between the drain of the gate-grounded transistor and a power source voltage, a coupling element (C1) interposed between the drain of the source-grounded transistor and the source of the gate-grounded transistor and made effectively open to a DC component and effectively short to a high-frequency component, a bias feeding inductor (Lm1) interposed between the drain of the source-grounded transistor and the power source voltage for feeding a bias voltage to the drain of the source-grounded transistor, and a bias feeding current source (lm2) connected with the source of the gate-grounded transistor for feeding a bias current to the gate-grounded transistor.
PCT/JP2007/000242 2007-03-16 2007-03-16 Low-noise amplifier Ceased WO2008114311A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009504904A JPWO2008114311A1 (en) 2007-03-16 2007-03-16 Low noise amplifier
PCT/JP2007/000242 WO2008114311A1 (en) 2007-03-16 2007-03-16 Low-noise amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/000242 WO2008114311A1 (en) 2007-03-16 2007-03-16 Low-noise amplifier

Publications (1)

Publication Number Publication Date
WO2008114311A1 true WO2008114311A1 (en) 2008-09-25

Family

ID=39765432

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/000242 Ceased WO2008114311A1 (en) 2007-03-16 2007-03-16 Low-noise amplifier

Country Status (2)

Country Link
JP (1) JPWO2008114311A1 (en)
WO (1) WO2008114311A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8610506B2 (en) 2011-02-24 2013-12-17 Fujitsu Limited Amplifier circuit
WO2018037688A1 (en) * 2016-08-23 2018-03-01 ソニーセミコンダクタソリューションズ株式会社 Signal amplification device
JP2018082458A (en) * 2013-03-15 2018-05-24 ドックオン エージー Logarithmic amplifier with universal demodulation capability
CN112290893A (en) * 2020-11-07 2021-01-29 山西大学 Low-noise broadband high-voltage amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121504A (en) * 1984-11-16 1986-06-09 Matsushita Electric Ind Co Ltd Frequency converter
JPS6351709A (en) * 1986-08-21 1988-03-04 Matsushita Electric Ind Co Ltd electronic circuit board
US5966051A (en) * 1998-04-21 1999-10-12 Conexant Systems, Inc. Low voltage medium power class C power amplifier with precise gain control

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102765A (en) * 1991-10-09 1993-04-23 Matsushita Electric Ind Co Ltd Gain control circuit
JPH05259748A (en) * 1992-03-13 1993-10-08 Hitachi Ltd Video output circuit
JP2005072735A (en) * 2003-08-20 2005-03-17 Sharp Corp Receiver

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121504A (en) * 1984-11-16 1986-06-09 Matsushita Electric Ind Co Ltd Frequency converter
JPS6351709A (en) * 1986-08-21 1988-03-04 Matsushita Electric Ind Co Ltd electronic circuit board
US5966051A (en) * 1998-04-21 1999-10-12 Conexant Systems, Inc. Low voltage medium power class C power amplifier with precise gain control

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8610506B2 (en) 2011-02-24 2013-12-17 Fujitsu Limited Amplifier circuit
JP2018082458A (en) * 2013-03-15 2018-05-24 ドックオン エージー Logarithmic amplifier with universal demodulation capability
WO2018037688A1 (en) * 2016-08-23 2018-03-01 ソニーセミコンダクタソリューションズ株式会社 Signal amplification device
JPWO2018037688A1 (en) * 2016-08-23 2019-06-20 ソニーセミコンダクタソリューションズ株式会社 Signal amplifier
US20190199308A1 (en) * 2016-08-23 2019-06-27 Sony Semiconductor Solutions Corporation Signal amplifier device
US11018643B2 (en) 2016-08-23 2021-05-25 Sony Semiconductor Solutions Corporation Signal amplifier device
JP7033067B2 (en) 2016-08-23 2022-03-09 ソニーセミコンダクタソリューションズ株式会社 Signal amplification device
CN112290893A (en) * 2020-11-07 2021-01-29 山西大学 Low-noise broadband high-voltage amplifier
CN112290893B (en) * 2020-11-07 2024-05-28 山西大学 Low Noise Broadband High Voltage Amplifier

Also Published As

Publication number Publication date
JPWO2008114311A1 (en) 2010-06-24

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