WO2008108266A1 - Method for producing semiconductor nanoparticle, method for producing core-shell semiconductor nanoparticle, and core-shell semiconductor nanoparticle - Google Patents
Method for producing semiconductor nanoparticle, method for producing core-shell semiconductor nanoparticle, and core-shell semiconductor nanoparticle Download PDFInfo
- Publication number
- WO2008108266A1 WO2008108266A1 PCT/JP2008/053502 JP2008053502W WO2008108266A1 WO 2008108266 A1 WO2008108266 A1 WO 2008108266A1 JP 2008053502 W JP2008053502 W JP 2008053502W WO 2008108266 A1 WO2008108266 A1 WO 2008108266A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor nanoparticle
- producing
- core
- shell
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Luminescent Compositions (AREA)
Abstract
Disclosed is a method for producing a semiconductor nanoparticle, which is a liquid phase method using a reaction liquid containing a semiconductor precursor. This method for producing a semiconductor nanoparticle is characterized in that a semiconductor nanoparticle is formed from the semiconductor precursor by irradiating the reaction liquid containing the semiconductor precursor with an ultrasonic wave. This method enables to obtain a core-shell semiconductor nanoparticle which exhibits high luminous efficiency when used as a light-emitting material.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007055361 | 2007-03-06 | ||
| JP2007-055361 | 2007-03-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008108266A1 true WO2008108266A1 (en) | 2008-09-12 |
Family
ID=39738149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/053502 Ceased WO2008108266A1 (en) | 2007-03-06 | 2008-02-28 | Method for producing semiconductor nanoparticle, method for producing core-shell semiconductor nanoparticle, and core-shell semiconductor nanoparticle |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2008108266A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012049194A1 (en) | 2010-10-15 | 2012-04-19 | Vallourec Mannesmann Oil & Gas France | Threaded tubular component and resulting connection |
| WO2012132232A1 (en) * | 2011-03-31 | 2012-10-04 | パナソニック株式会社 | Semiconductor light-emitting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002154817A (en) * | 2000-11-15 | 2002-05-28 | Nippon Hoso Kyokai <Nhk> | Ultrafine silicon particles and method for producing the same |
| JP2005503984A (en) * | 2001-09-19 | 2005-02-10 | エバーグリーン ソーラー, インコーポレイテッド | High-yield method for preparing silicon nanocrystals with chemically accessible surfaces |
| JP2005263536A (en) * | 2004-03-17 | 2005-09-29 | Denki Kagaku Kogyo Kk | Silicon particle superlattice, manufacturing method thereof, silicon particle superlattice structure using the same, light emitting device and electronic component |
| JP2006071330A (en) * | 2004-08-31 | 2006-03-16 | Tokyo Denki Univ | Nano-silicon fluorescent element for cancer cell detection and vision and method for producing the same |
-
2008
- 2008-02-28 WO PCT/JP2008/053502 patent/WO2008108266A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002154817A (en) * | 2000-11-15 | 2002-05-28 | Nippon Hoso Kyokai <Nhk> | Ultrafine silicon particles and method for producing the same |
| JP2005503984A (en) * | 2001-09-19 | 2005-02-10 | エバーグリーン ソーラー, インコーポレイテッド | High-yield method for preparing silicon nanocrystals with chemically accessible surfaces |
| JP2005263536A (en) * | 2004-03-17 | 2005-09-29 | Denki Kagaku Kogyo Kk | Silicon particle superlattice, manufacturing method thereof, silicon particle superlattice structure using the same, light emitting device and electronic component |
| JP2006071330A (en) * | 2004-08-31 | 2006-03-16 | Tokyo Denki Univ | Nano-silicon fluorescent element for cancer cell detection and vision and method for producing the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012049194A1 (en) | 2010-10-15 | 2012-04-19 | Vallourec Mannesmann Oil & Gas France | Threaded tubular component and resulting connection |
| US9562400B2 (en) | 2010-10-15 | 2017-02-07 | Vallourec Oil And Gas France | Threaded tubular component and resulting connection |
| WO2012132232A1 (en) * | 2011-03-31 | 2012-10-04 | パナソニック株式会社 | Semiconductor light-emitting device |
| JPWO2012132232A1 (en) * | 2011-03-31 | 2014-07-24 | パナソニック株式会社 | Semiconductor light emitting device |
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| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
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