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WO2008105342A1 - 金属用研磨液及び研磨方法 - Google Patents

金属用研磨液及び研磨方法 Download PDF

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Publication number
WO2008105342A1
WO2008105342A1 PCT/JP2008/053065 JP2008053065W WO2008105342A1 WO 2008105342 A1 WO2008105342 A1 WO 2008105342A1 JP 2008053065 W JP2008053065 W JP 2008053065W WO 2008105342 A1 WO2008105342 A1 WO 2008105342A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
metal
polishing liquid
disclosed
abrasive grains
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/053065
Other languages
English (en)
French (fr)
Inventor
Jin Amanokura
Takafumi Sakurada
Sou Anzai
Takashi Shinoda
Shigeru Nobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to KR1020097016963A priority Critical patent/KR101418626B1/ko
Priority to CN200880005185.8A priority patent/CN101611476B/zh
Priority to JP2009501221A priority patent/JP5381701B2/ja
Priority to US12/527,607 priority patent/US8821750B2/en
Publication of WO2008105342A1 publication Critical patent/WO2008105342A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H10P50/00—
    • H10P52/403—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　砥粒、酸化金属溶解剤及び水を含有した金属用研磨液であって、前記砥粒が、平均２次粒径が異なる砥粒を２種類以上含むことを特徴とする金属用研磨液を用いて、層間絶縁膜の研磨速度が大きく、被研磨面の平坦性が高い研磨方法を提供できる。またそれにより、微細化、薄膜化、寸法精度及び電気特性に優れ、信頼性が高く、低コストの半導体デバイスに好適な研磨方法を提供できる。
PCT/JP2008/053065 2007-02-27 2008-02-22 金属用研磨液及び研磨方法 Ceased WO2008105342A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097016963A KR101418626B1 (ko) 2007-02-27 2008-02-22 금속용 연마액 및 연마방법
CN200880005185.8A CN101611476B (zh) 2007-02-27 2008-02-22 金属用研磨液以及研磨方法
JP2009501221A JP5381701B2 (ja) 2007-02-27 2008-02-22 金属用研磨液及び研磨方法
US12/527,607 US8821750B2 (en) 2007-02-27 2008-02-22 Metal polishing slurry and polishing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007047007 2007-02-27
JP2007-047007 2007-02-27
JP2007125840 2007-05-10
JP2007-125840 2007-05-10

Publications (1)

Publication Number Publication Date
WO2008105342A1 true WO2008105342A1 (ja) 2008-09-04

Family

ID=39721177

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053065 Ceased WO2008105342A1 (ja) 2007-02-27 2008-02-22 金属用研磨液及び研磨方法

Country Status (6)

Country Link
US (1) US8821750B2 (ja)
JP (2) JP5381701B2 (ja)
KR (1) KR101418626B1 (ja)
CN (2) CN101611476B (ja)
TW (1) TWI410469B (ja)
WO (1) WO2008105342A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231486A (ja) * 2008-03-21 2009-10-08 Kao Corp シリコンウエハ用研磨液組成物
JP2010080499A (ja) * 2008-09-24 2010-04-08 Fujifilm Corp 研磨液
JP2010114402A (ja) * 2008-10-07 2010-05-20 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及びこのｃｍｐ用研磨液を用いた研磨方法
JP2012512757A (ja) * 2008-12-20 2012-06-07 キャボット マイクロエレクトロニクス コーポレイション ワイヤーソー切断の間の乾燥性を向上させるための組成物
CN102786879A (zh) * 2012-07-17 2012-11-21 清华大学 钛酸钡化学机械抛光水性组合物及其应用
WO2013069623A1 (ja) * 2011-11-08 2013-05-16 株式会社 フジミインコーポレーテッド 研磨用組成物
WO2014061417A1 (ja) * 2012-10-16 2014-04-24 日立化成株式会社 Ｃｍｐ用研磨液、貯蔵液及び研磨方法
CN104119802A (zh) * 2014-08-06 2014-10-29 江苏天恒纳米科技股份有限公司 一种蓝宝石材料表面超精密加工专用纳米浆料
WO2017002705A1 (ja) * 2015-06-30 2017-01-05 株式会社フジミインコーポレーテッド 研磨用組成物
JP2017155242A (ja) * 2013-04-02 2017-09-07 信越化学工業株式会社 コロイダルシリカ研磨材

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JP5397386B2 (ja) 2008-12-11 2014-01-22 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
CN107474799B (zh) 2010-03-12 2020-12-29 昭和电工材料株式会社 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法
JP5648567B2 (ja) * 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
JP5590144B2 (ja) 2010-11-22 2014-09-17 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基板の研磨方法
KR101886892B1 (ko) 2010-11-22 2018-08-08 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR101293790B1 (ko) * 2010-12-31 2013-08-06 제일모직주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
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KR102034329B1 (ko) 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
CN104321854B (zh) 2012-05-22 2017-06-20 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体
JP6332041B2 (ja) * 2014-01-20 2018-05-30 信越化学工業株式会社 合成石英ガラス基板の製造方法
JP6526626B2 (ja) * 2014-03-20 2019-06-05 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および基板の製造方法
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CN106661429B (zh) * 2014-08-26 2019-07-05 凯斯科技股份有限公司 抛光浆料组合物
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US11469182B2 (en) 2020-11-10 2022-10-11 Nanya Technology Corporation Semiconductor device structure with manganese-containing lining layer and method for preparing the same
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JP7494799B2 (ja) * 2021-06-01 2024-06-04 信越半導体株式会社 両面研磨方法
KR102620964B1 (ko) * 2021-07-08 2024-01-03 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법
KR102866377B1 (ko) * 2022-01-28 2025-09-29 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법

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CN102690607A (zh) 2012-09-26
CN101611476A (zh) 2009-12-23
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US8821750B2 (en) 2014-09-02
JP5381701B2 (ja) 2014-01-08
US20100120250A1 (en) 2010-05-13
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