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WO2008102548A1 - 半導体発光素子および半導体発光装置の製造方法 - Google Patents

半導体発光素子および半導体発光装置の製造方法 Download PDF

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Publication number
WO2008102548A1
WO2008102548A1 PCT/JP2008/000269 JP2008000269W WO2008102548A1 WO 2008102548 A1 WO2008102548 A1 WO 2008102548A1 JP 2008000269 W JP2008000269 W JP 2008000269W WO 2008102548 A1 WO2008102548 A1 WO 2008102548A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
light emitting
semiconductor light
deteriorates
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/000269
Other languages
English (en)
French (fr)
Inventor
Hidenori Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to CN200880001275XA priority Critical patent/CN101569024B/zh
Priority to JP2009500086A priority patent/JP4527197B2/ja
Priority to US12/518,388 priority patent/US7951625B2/en
Priority to EP08710422.0A priority patent/EP2113950A4/en
Publication of WO2008102548A1 publication Critical patent/WO2008102548A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H10W72/20—
    • H10W74/00—
    • H10W90/724—

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

　半導体発光装置では、基板の側面から出る光は損失光となるため、基板の側面が広いと光の取り出し効率が低下する。基板の側面を狭くするには基板の厚みを薄くすればよいが、基板が薄くなると機械的強度が低下し、加工時の応力などで割れてしまい歩留まりが低下するという課題があった。 　基板上に発光層を形成し、研削台にワックスで固定した後、基板を研削で薄くする。その後基板に支持基板を接着し、基板の強度を補償する。支持基板が接着された状態で電極などに固定し、最後に支持基板を剥離する。
PCT/JP2008/000269 2007-02-21 2008-02-19 半導体発光素子および半導体発光装置の製造方法 Ceased WO2008102548A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880001275XA CN101569024B (zh) 2007-02-21 2008-02-19 半导体发光器件及半导体发光装置的制造方法
JP2009500086A JP4527197B2 (ja) 2007-02-21 2008-02-19 半導体発光素子および半導体発光装置の製造方法
US12/518,388 US7951625B2 (en) 2007-02-21 2008-02-19 Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
EP08710422.0A EP2113950A4 (en) 2007-02-21 2008-02-19 Light-emitting semiconductor element and method for producing a light-emitting semiconductor element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-040236 2007-02-21
JP2007040236 2007-02-21

Publications (1)

Publication Number Publication Date
WO2008102548A1 true WO2008102548A1 (ja) 2008-08-28

Family

ID=39709828

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000269 Ceased WO2008102548A1 (ja) 2007-02-21 2008-02-19 半導体発光素子および半導体発光装置の製造方法

Country Status (5)

Country Link
US (1) US7951625B2 (ja)
EP (1) EP2113950A4 (ja)
JP (1) JP4527197B2 (ja)
CN (1) CN101569024B (ja)
WO (1) WO2008102548A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100140640A1 (en) * 2008-12-08 2010-06-10 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP2010245515A (ja) * 2009-04-02 2010-10-28 Visera Technologies Co Ltd 白色光発光ダイオードチップ及びその製造方法
JP2011233552A (ja) * 2010-04-23 2011-11-17 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
CN102576789A (zh) * 2009-09-20 2012-07-11 维亚甘有限公司 电子器件的晶片级封装
JP2013110227A (ja) * 2011-11-18 2013-06-06 Nichia Chem Ind Ltd 発光装置および発光装置の製造方法
JP2013207108A (ja) * 2012-03-28 2013-10-07 Mitsubishi Chemicals Corp 発光ダイオード素子およびその製造方法
WO2013154181A1 (ja) * 2012-04-13 2013-10-17 株式会社ドゥエルアソシエイツ チップオンボード型のパッケージ基板を有する発光装置の製造方法
JP2014168033A (ja) * 2012-06-29 2014-09-11 Nitto Denko Corp 反射層−蛍光体層被覆ｌｅｄ、その製造方法、ｌｅｄ装置およびその製造方法
EP2732478B1 (en) * 2011-07-15 2018-09-19 Lumileds Holding B.V. Method of bonding a semiconductor device to a support substrate
US20220158066A1 (en) * 2010-03-19 2022-05-19 Micron Technology, Inc. Light emitting diodes with enhanced thermal sinking and associated methods of operation

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5375041B2 (ja) 2008-11-13 2013-12-25 日亜化学工業株式会社 発光装置およびその製造方法
US9502612B2 (en) 2009-09-20 2016-11-22 Viagan Ltd. Light emitting diode package with enhanced heat conduction
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN101976715B (zh) * 2010-10-05 2011-10-05 厦门市三安光电科技有限公司 倒梯形铝镓铟磷系发光二极管的制作工艺
DE102011012298A1 (de) * 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
CN102683538B (zh) 2011-03-06 2016-06-08 维亚甘有限公司 发光二极管封装和制造方法
US20130095581A1 (en) * 2011-10-18 2013-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Thick window layer led manufacture
WO2013150427A1 (en) * 2012-04-05 2013-10-10 Koninklijke Philips N.V. Led thin-film device partial singulation prior to substrate thinning or removal
CN102800585B (zh) * 2012-07-09 2015-09-09 厦门飞德利照明科技有限公司 一种发光二极管的电铸制造方法
EP3271953B1 (en) * 2015-05-21 2019-05-01 Goertek Inc. Transferring method and manufacturing method of micro-led
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
KR102659984B1 (ko) * 2019-06-21 2024-04-24 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
CN118231544A (zh) * 2024-03-26 2024-06-21 天马新型显示技术研究院(厦门)有限公司 一种显示面板和显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168383A (ja) * 1999-12-03 2001-06-22 Matsushita Electronics Industry Corp 複合発光素子の製造方法
JP2002158193A (ja) 2000-11-21 2002-05-31 Sharp Corp 半導体発光素子の製造方法およびその製造方法に用いられる定形の透明基板およびその製造方法で製造された半導体レーザ素子
JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
JP2006128659A (ja) 2004-09-29 2006-05-18 Sumitomo Chemical Co Ltd 窒化物系半導体発光素子及びその製造方法
JP2006279080A (ja) * 2006-07-10 2006-10-12 Sanyo Electric Co Ltd 発光素子ウエハの固定方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000022213A (ja) * 1998-06-30 2000-01-21 Sharp Corp 窒化ガリウム系半導体素子及びその製造方法
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
TWI278995B (en) * 2002-01-28 2007-04-11 Nichia Corp Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
EP1658642B1 (en) 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
TWI308397B (en) * 2004-06-28 2009-04-01 Epistar Corp Flip-chip light emitting diode and fabricating method thereof
JP2006086516A (ja) * 2004-08-20 2006-03-30 Showa Denko Kk 半導体発光素子の製造方法
JP2006078710A (ja) * 2004-09-09 2006-03-23 Tomoegawa Paper Co Ltd 防眩フィルム
CN100403562C (zh) * 2005-03-15 2008-07-16 金芃 垂直结构的半导体芯片或器件
US7625778B2 (en) * 2005-06-08 2009-12-01 Chunghwa Picture Tubes, Ltd. Method of manufacturing a substrate-free flip chip light emitting diode
US20060289892A1 (en) * 2005-06-27 2006-12-28 Lee Jae S Method for preparing light emitting diode device having heat dissipation rate enhancement
US20070004066A1 (en) * 2005-07-01 2007-01-04 Dong-Sing Wuu Method for manufacturing a light emitting device and a light emitting device manufactured therefrom

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168383A (ja) * 1999-12-03 2001-06-22 Matsushita Electronics Industry Corp 複合発光素子の製造方法
JP2002158193A (ja) 2000-11-21 2002-05-31 Sharp Corp 半導体発光素子の製造方法およびその製造方法に用いられる定形の透明基板およびその製造方法で製造された半導体レーザ素子
JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
JP2006128659A (ja) 2004-09-29 2006-05-18 Sumitomo Chemical Co Ltd 窒化物系半導体発光素子及びその製造方法
JP2006279080A (ja) * 2006-07-10 2006-10-12 Sanyo Electric Co Ltd 発光素子ウエハの固定方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100140640A1 (en) * 2008-12-08 2010-06-10 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US8581291B2 (en) * 2008-12-08 2013-11-12 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US8906716B2 (en) 2008-12-08 2014-12-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US9431588B2 (en) 2008-12-08 2016-08-30 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP2010245515A (ja) * 2009-04-02 2010-10-28 Visera Technologies Co Ltd 白色光発光ダイオードチップ及びその製造方法
CN102576789A (zh) * 2009-09-20 2012-07-11 维亚甘有限公司 电子器件的晶片级封装
US20220158066A1 (en) * 2010-03-19 2022-05-19 Micron Technology, Inc. Light emitting diodes with enhanced thermal sinking and associated methods of operation
US12015114B2 (en) 2010-03-19 2024-06-18 Micron Technology, Inc. Light emitting diodes with enhanced thermal sinking and associated methods of operation
US20230275202A1 (en) * 2010-03-19 2023-08-31 Micron Technology, Inc. Light emitting diodes with enhanced thermal sinking and associated methods of operation
US11688842B2 (en) * 2010-03-19 2023-06-27 Micron Technology, Inc. Light emitting diodes with enhanced thermal sinking and associated methods of operation
JP2011233552A (ja) * 2010-04-23 2011-11-17 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
EP2732478B1 (en) * 2011-07-15 2018-09-19 Lumileds Holding B.V. Method of bonding a semiconductor device to a support substrate
JP2013110227A (ja) * 2011-11-18 2013-06-06 Nichia Chem Ind Ltd 発光装置および発光装置の製造方法
JP2013207108A (ja) * 2012-03-28 2013-10-07 Mitsubishi Chemicals Corp 発光ダイオード素子およびその製造方法
WO2013154181A1 (ja) * 2012-04-13 2013-10-17 株式会社ドゥエルアソシエイツ チップオンボード型のパッケージ基板を有する発光装置の製造方法
JP2014168033A (ja) * 2012-06-29 2014-09-11 Nitto Denko Corp 反射層−蛍光体層被覆ｌｅｄ、その製造方法、ｌｅｄ装置およびその製造方法

Also Published As

Publication number Publication date
US20100047939A1 (en) 2010-02-25
EP2113950A4 (en) 2015-05-27
EP2113950A1 (en) 2009-11-04
CN101569024A (zh) 2009-10-28
US7951625B2 (en) 2011-05-31
CN101569024B (zh) 2011-01-12
JPWO2008102548A1 (ja) 2010-05-27
JP4527197B2 (ja) 2010-08-18

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