WO2008153065A1 - Semiconductor light emitting element and method for manufacturing the same - Google Patents
Semiconductor light emitting element and method for manufacturing the same Download PDFInfo
- Publication number
- WO2008153065A1 WO2008153065A1 PCT/JP2008/060693 JP2008060693W WO2008153065A1 WO 2008153065 A1 WO2008153065 A1 WO 2008153065A1 JP 2008060693 W JP2008060693 W JP 2008060693W WO 2008153065 A1 WO2008153065 A1 WO 2008153065A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type semiconductor
- semiconductor layer
- light emitting
- emitting element
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
- H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
Landscapes
- Led Devices (AREA)
Abstract
The number of pairs of multiquantum well (MQW) layers of an active layer is optimized for permitting an electron to efficiently rebind with a hole in the active layer, and light emitting efficiency is improved. A semiconductor light emitting element is provided with an n-type semiconductor layer (2); a p-type semiconductor layer (4); and an active layer (3), which is arranged between the n-type semiconductor layer (2) and the p-type semiconductor layer (4) and contains In having a multi quantum well structure of barrier layers (311-31n and 310) composed of GaN and well layers (321-32n) composed of InxGa1-xN (0<x<1). The number of the pairs of the MQW layers is 6-11, and electron overflow from the n-type semiconductor layer (2) to the p-type semiconductor layer (4), diffusion of a p-type dopant from the p-type semiconductor layer (4) to the well layers (321-32n) and diffusion of an n-type dopant from the n-type semiconductor layer (2) to the active layer (3) are suppressed. A method for manufacturing such semiconductor light emitting element is also provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009519278A JPWO2008153065A1 (en) | 2007-06-15 | 2008-06-11 | Semiconductor light emitting device and manufacturing method thereof |
Applications Claiming Priority (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007158562 | 2007-06-15 | ||
| JP2007-158562 | 2007-06-15 | ||
| JP2007-158565 | 2007-06-15 | ||
| JP2007158642 | 2007-06-15 | ||
| JP2007-158642 | 2007-06-15 | ||
| JP2007158565 | 2007-06-15 | ||
| JP2007289735 | 2007-11-07 | ||
| JP2007-289735 | 2007-11-07 | ||
| JP2007-290587 | 2007-11-08 | ||
| JP2007-290613 | 2007-11-08 | ||
| JP2007290613 | 2007-11-08 | ||
| JP2007290587 | 2007-11-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008153065A1 true WO2008153065A1 (en) | 2008-12-18 |
Family
ID=40129670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/060693 Ceased WO2008153065A1 (en) | 2007-06-15 | 2008-06-11 | Semiconductor light emitting element and method for manufacturing the same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2008153065A1 (en) |
| TW (1) | TW200915620A (en) |
| WO (1) | WO2008153065A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2317574A3 (en) * | 2009-11-02 | 2011-12-14 | LG Innotek Co., Ltd. | Light emitting device comprising metal oxide semiconductor layer and pattern for light extraction on active layer |
| JP2017117845A (en) * | 2015-12-21 | 2017-06-29 | 株式会社小糸製作所 | Semiconductor light emitting element and manufacturing method of the same |
| WO2022262315A1 (en) * | 2021-06-15 | 2022-12-22 | 厦门士兰明镓化合物半导体有限公司 | Semiconductor light-emitting element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210146805A (en) * | 2020-05-27 | 2021-12-06 | 니치아 카가쿠 고교 가부시키가이샤 | A light emitting element and method for manufacturing the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH104210A (en) * | 1996-06-14 | 1998-01-06 | Toyoda Gosei Co Ltd | Group III nitride compound semiconductor light emitting device |
| JP2002084038A (en) * | 2000-07-07 | 2002-03-22 | Nichia Chem Ind Ltd | Nitride semiconductor device |
| JP2006120856A (en) * | 2004-10-21 | 2006-05-11 | Hitachi Cable Ltd | Manufacturing method of semiconductor light emitting device |
| JP2006186005A (en) * | 2004-12-27 | 2006-07-13 | Sumitomo Chemical Co Ltd | Nitride-based compound semiconductor, method for producing the same, and use thereof |
| JP2007150076A (en) * | 2005-11-29 | 2007-06-14 | Rohm Co Ltd | Nitride semiconductor light emitting device |
-
2008
- 2008-06-11 WO PCT/JP2008/060693 patent/WO2008153065A1/en not_active Ceased
- 2008-06-11 JP JP2009519278A patent/JPWO2008153065A1/en active Pending
- 2008-06-13 TW TW097122321A patent/TW200915620A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH104210A (en) * | 1996-06-14 | 1998-01-06 | Toyoda Gosei Co Ltd | Group III nitride compound semiconductor light emitting device |
| JP2002084038A (en) * | 2000-07-07 | 2002-03-22 | Nichia Chem Ind Ltd | Nitride semiconductor device |
| JP2006120856A (en) * | 2004-10-21 | 2006-05-11 | Hitachi Cable Ltd | Manufacturing method of semiconductor light emitting device |
| JP2006186005A (en) * | 2004-12-27 | 2006-07-13 | Sumitomo Chemical Co Ltd | Nitride-based compound semiconductor, method for producing the same, and use thereof |
| JP2007150076A (en) * | 2005-11-29 | 2007-06-14 | Rohm Co Ltd | Nitride semiconductor light emitting device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2317574A3 (en) * | 2009-11-02 | 2011-12-14 | LG Innotek Co., Ltd. | Light emitting device comprising metal oxide semiconductor layer and pattern for light extraction on active layer |
| US8698125B2 (en) | 2009-11-02 | 2014-04-15 | Lg Innotek Co., Ltd. | Light emitting device including second conductive type semiconductor layer and method of manufacturing the light emitting device |
| JP2017117845A (en) * | 2015-12-21 | 2017-06-29 | 株式会社小糸製作所 | Semiconductor light emitting element and manufacturing method of the same |
| WO2022262315A1 (en) * | 2021-06-15 | 2022-12-22 | 厦门士兰明镓化合物半导体有限公司 | Semiconductor light-emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200915620A (en) | 2009-04-01 |
| JPWO2008153065A1 (en) | 2010-08-26 |
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