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WO2008148377A3 - Verfahren zur selektiven thermischen oberflächenbehandlung eines flächensubstrates - Google Patents

Verfahren zur selektiven thermischen oberflächenbehandlung eines flächensubstrates Download PDF

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Publication number
WO2008148377A3
WO2008148377A3 PCT/DE2008/000922 DE2008000922W WO2008148377A3 WO 2008148377 A3 WO2008148377 A3 WO 2008148377A3 DE 2008000922 W DE2008000922 W DE 2008000922W WO 2008148377 A3 WO2008148377 A3 WO 2008148377A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate surface
planar substrate
spatial axis
substrate
thermal treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/000922
Other languages
English (en)
French (fr)
Other versions
WO2008148377A2 (de
Inventor
Rainer Paetzel
Brandon A Turk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coherent GmbH
Original Assignee
Coherent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Coherent GmbH filed Critical Coherent GmbH
Publication of WO2008148377A2 publication Critical patent/WO2008148377A2/de
Publication of WO2008148377A3 publication Critical patent/WO2008148377A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P14/382—
    • H10P14/3411—
    • H10P14/3816—
    • H10P34/42—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

Beschrieben wird ein Verfahren zur lokalen thermischen Oberflächenbehandlung eines Flächensubstrates, im Weiteren kurz Substratoberfläche genannt, mittels eines Lasers zur Erzeugung eines auf die Substratoberfläche gerichteten, gepulst betriebenen Laserstrahls, der am Ort der Substratoberfläche jeweils einen homogen ausgeleuchteten Laserstahlquerschnitt aufweist, bei dem das Flächensubstrat wenigstens längs einer ersten Raumachse bewegt wird und bei dem der Laserstrahl unabhängig von der Bewegung des Flächensubstrats längs der ersten und längs einer zu der ersten Raumachse orthogonal orientierten zweiten Raumachse, die parallel zur Substratoberfläche ausgerichtet ist, ausgelenkt wird, wobei der Laserstrahl derart relativ zur der sich bewegenden Substratoberfläche ausgelenkt wird, so dass die Laserstrahlquerschnitte von n ≥ 2 Laserpulsen mit einem gegenseitigen Überdeckungsgrad von wenigstens 80% auf einem ersten diskret vorgebbaren lokalen Bereich der Substratoberfläche abgebildet werden.
PCT/DE2008/000922 2007-06-04 2008-06-03 Verfahren zur selektiven thermischen oberflächenbehandlung eines flächensubstrates Ceased WO2008148377A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007025942A DE102007025942A1 (de) 2007-06-04 2007-06-04 Verfahren zur selektiven thermischen Oberflächenbehandlung eines Flächensubstrates
DE102007025942.7 2007-06-04

Publications (2)

Publication Number Publication Date
WO2008148377A2 WO2008148377A2 (de) 2008-12-11
WO2008148377A3 true WO2008148377A3 (de) 2009-03-12

Family

ID=39917745

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/000922 Ceased WO2008148377A2 (de) 2007-06-04 2008-06-03 Verfahren zur selektiven thermischen oberflächenbehandlung eines flächensubstrates

Country Status (2)

Country Link
DE (1) DE102007025942A1 (de)
WO (1) WO2008148377A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2012005204A (es) 2009-11-03 2012-09-21 Univ Columbia Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos.
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
EP2497105A4 (de) * 2009-11-03 2013-11-20 Univ Columbia Systeme und verfahren für eine teilweise schmelzfilmverarbeitung mit nichtperiodischen impulsen
TWI459444B (zh) 2009-11-30 2014-11-01 應用材料股份有限公司 在半導體應用上的結晶處理

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366926A (en) * 1993-06-07 1994-11-22 Xerox Corporation Low temperature process for laser dehydrogenation and crystallization of amorphous silicon
WO2000014784A1 (en) * 1998-09-04 2000-03-16 Koninklijke Philips Electronics N.V. Double-pulse laser crystallisation of thin semiconductor films
US20020068391A1 (en) * 1999-03-31 2002-06-06 Yunho Jung Laser annealing system for crystallization of semiconductor layer and method of the same
WO2006107926A2 (en) * 2005-04-06 2006-10-12 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
WO2007022234A1 (en) * 2005-08-16 2007-02-22 The Trustees Of Columbia University In The City Of New York Systems and methods for uniform sequential lateral solidification of thin films using high frequency lasers
WO2007022302A2 (en) * 2005-08-16 2007-02-22 The Trustees Of Columbia University In The City Of New York High throughput crystallization of thin films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4209606B2 (ja) * 2001-08-17 2009-01-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005518658A (ja) 2002-02-25 2005-06-23 オーボテック リミテッド フラットパネルディスプレイ基板の製造方法
US7521651B2 (en) 2003-09-12 2009-04-21 Orbotech Ltd Multiple beam micro-machining system and method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366926A (en) * 1993-06-07 1994-11-22 Xerox Corporation Low temperature process for laser dehydrogenation and crystallization of amorphous silicon
WO2000014784A1 (en) * 1998-09-04 2000-03-16 Koninklijke Philips Electronics N.V. Double-pulse laser crystallisation of thin semiconductor films
US20020068391A1 (en) * 1999-03-31 2002-06-06 Yunho Jung Laser annealing system for crystallization of semiconductor layer and method of the same
WO2006107926A2 (en) * 2005-04-06 2006-10-12 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
WO2007022234A1 (en) * 2005-08-16 2007-02-22 The Trustees Of Columbia University In The City Of New York Systems and methods for uniform sequential lateral solidification of thin films using high frequency lasers
WO2007022302A2 (en) * 2005-08-16 2007-02-22 The Trustees Of Columbia University In The City Of New York High throughput crystallization of thin films

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
C. HILL: "Factors Influencing Applications", LASER ANNEALING OF SEMICONDUCTORS, 1982, pages 499 - 506, XP009109400 *
ISHIHARA R ET AL: "A NOVEL DOUBLE-PULSE EXCIMER-LASER CRYSTALLIZATION METHOD OF SILICON THIN-FILMS", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO,JP, vol. 34, no. 8A, 1 August 1995 (1995-08-01), pages 3976 - 3981, XP000861506, ISSN: 0021-4922 *

Also Published As

Publication number Publication date
WO2008148377A2 (de) 2008-12-11
DE102007025942A1 (de) 2008-12-11

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