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WO2008146625A1 - 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 - Google Patents

反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 Download PDF

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Publication number
WO2008146625A1
WO2008146625A1 PCT/JP2008/059045 JP2008059045W WO2008146625A1 WO 2008146625 A1 WO2008146625 A1 WO 2008146625A1 JP 2008059045 W JP2008059045 W JP 2008059045W WO 2008146625 A1 WO2008146625 A1 WO 2008146625A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
antireflection film
formation
resist pattern
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/059045
Other languages
English (en)
French (fr)
Inventor
Atsushi Sawano
Jun Koshiyama
Takako Hirosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to US12/451,747 priority Critical patent/US8455182B2/en
Priority to CN200880015585A priority patent/CN101681113A/zh
Publication of WO2008146625A1 publication Critical patent/WO2008146625A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P76/2043—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　レジスト膜上に反射防止膜を形成する際に用いられる反射防止膜形成用組成物であって、取り扱いが容易であり、ＰＦＯＳを用いた反射防止膜と同様に、優れた光学特性を有する反射防止膜を形成できる反射防止膜形成用組成物を提供すること。 　レジスト膜上に設けられる反射防止膜を形成するための反射防止膜形成用組成物であって、所定のフッ素化合物を含む反射防止膜形成用組成物。この反射防止膜形成用組成物は、上記所定のフッ素化合物が反射防止膜の光学特性の向上に寄与するので、優れた光学特性を有する反射防止膜を形成することができる。
PCT/JP2008/059045 2007-06-01 2008-05-16 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 Ceased WO2008146625A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/451,747 US8455182B2 (en) 2007-06-01 2008-05-16 Composition for antireflection film formation and method for resist pattern formation using the composition
CN200880015585A CN101681113A (zh) 2007-06-01 2008-05-16 防反射膜形成用组合物、以及使用该组合物的光刻胶图案形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-147410 2007-06-01
JP2007147410A JP4917969B2 (ja) 2007-06-01 2007-06-01 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法

Publications (1)

Publication Number Publication Date
WO2008146625A1 true WO2008146625A1 (ja) 2008-12-04

Family

ID=40074890

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059045 Ceased WO2008146625A1 (ja) 2007-06-01 2008-05-16 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法

Country Status (5)

Country Link
US (1) US8455182B2 (ja)
JP (1) JP4917969B2 (ja)
CN (1) CN101681113A (ja)
TW (1) TW200916968A (ja)
WO (1) WO2008146625A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI753721B (zh) * 2016-04-14 2022-01-21 日商旭化成股份有限公司 感光性樹脂組合物及硬化浮凸圖案之製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5902529B2 (ja) * 2012-03-28 2016-04-13 株式会社ディスコ レーザ加工方法
KR102165728B1 (ko) * 2014-07-24 2020-10-14 닛산 가가쿠 가부시키가이샤 칼라필터 하층막 형성용 수지 조성물
CN114035405B (zh) * 2022-01-07 2022-04-22 甘肃华隆芯材料科技有限公司 制备顶部抗反射膜的组合物、顶部抗反射膜和含氟组合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005257826A (ja) * 2004-03-10 2005-09-22 Tokai Kogaku Kk 光触媒性光学体
JP2006056139A (ja) * 2004-08-20 2006-03-02 Konica Minolta Medical & Graphic Inc インクシート及び画像形成方法
WO2007043556A1 (ja) * 2005-10-14 2007-04-19 Tokyo Ohka Kogyo Co., Ltd. ホトレジスト上層膜形成用材料

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910122A (en) 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
JP2616091B2 (ja) 1990-01-29 1997-06-04 日本電気株式会社 半導体装置の製造方法
JP2599638B2 (ja) 1990-06-22 1997-04-09 大日精化工業株式会社 微粒子複合酸化物ブルーグリーン顔料及びその製造方法
US5750017A (en) 1996-08-21 1998-05-12 Lucent Technologies Inc. Tin electroplating process
JP2005103893A (ja) 2003-09-30 2005-04-21 Konica Minolta Medical & Graphic Inc 画像形成材料及び画像形成方法
JP4609878B2 (ja) * 2003-10-28 2011-01-12 東京応化工業株式会社 レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法
US7314691B2 (en) * 2004-04-08 2008-01-01 Samsung Electronics Co., Ltd. Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device
TWI403843B (zh) * 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
ATE418748T1 (de) * 2005-09-26 2009-01-15 Fujifilm Corp Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit
US8188159B2 (en) 2005-10-13 2012-05-29 Hewlett-Packard Development Company, L.P. Environmentally friendly additives for inkjet inks
JP5183069B2 (ja) * 2006-01-08 2013-04-17 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジストのためのコーティング組成物
TWI485064B (zh) * 2006-03-10 2015-05-21 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
JP5324290B2 (ja) * 2008-04-03 2013-10-23 東京応化工業株式会社 反射防止膜形成材料、およびこれを用いたレジストパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005257826A (ja) * 2004-03-10 2005-09-22 Tokai Kogaku Kk 光触媒性光学体
JP2006056139A (ja) * 2004-08-20 2006-03-02 Konica Minolta Medical & Graphic Inc インクシート及び画像形成方法
WO2007043556A1 (ja) * 2005-10-14 2007-04-19 Tokyo Ohka Kogyo Co., Ltd. ホトレジスト上層膜形成用材料

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI753721B (zh) * 2016-04-14 2022-01-21 日商旭化成股份有限公司 感光性樹脂組合物及硬化浮凸圖案之製造方法

Also Published As

Publication number Publication date
TWI374338B (ja) 2012-10-11
US20100104987A1 (en) 2010-04-29
JP2008299222A (ja) 2008-12-11
TW200916968A (en) 2009-04-16
US8455182B2 (en) 2013-06-04
JP4917969B2 (ja) 2012-04-18
CN101681113A (zh) 2010-03-24

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