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WO2008146693A1 - Oxide transparent electroconductive film, and photoelectric conversion element and photodetection element using the oxide transparent electroconductive film - Google Patents

Oxide transparent electroconductive film, and photoelectric conversion element and photodetection element using the oxide transparent electroconductive film Download PDF

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Publication number
WO2008146693A1
WO2008146693A1 PCT/JP2008/059416 JP2008059416W WO2008146693A1 WO 2008146693 A1 WO2008146693 A1 WO 2008146693A1 JP 2008059416 W JP2008059416 W JP 2008059416W WO 2008146693 A1 WO2008146693 A1 WO 2008146693A1
Authority
WO
WIPO (PCT)
Prior art keywords
electroconductive film
oxide
oxide transparent
transparent electroconductive
near infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/059416
Other languages
French (fr)
Japanese (ja)
Inventor
Takashi Koida
Hiroyuki Fujiwara
Michio Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Priority to JP2009516276A priority Critical patent/JP5229919B2/en
Publication of WO2008146693A1 publication Critical patent/WO2008146693A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Hybrid Cells (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

This invention provides a low-resistance oxide transparent electroconductive film having excellent transparency in a visible and near infrared region by a low-temperature process at a temperature of 200°C or below. Further, the use of the oxide transparent elctroconductive film as a transparent electrode in a photoelectric conversion element can realize a high-efficiency solar cell having a high spectral sensitivity in a near infrared region which has been unattainable by the prior art technique or a high-performance photodetection element which can detect a very weak near infrared radiation. The oxide transparent electroconductive film is formed of an oxide electroconductive film containing hydrogen atoms. In this oxide electroconductive film, various conditions of a hydrogen atom content of not less than 1% and not more than 10%, an electron mobility of not less than 40 cm2/Vs as measured by Hall effect measurement, a carrier concentration of not more than 5 × 1020 cm-3, and a specific resistance of not more than 1 × 10-3 Ωcm are properly combined. The oxide electroconductive film is grown by solid phase growth using annealing.
PCT/JP2008/059416 2007-05-23 2008-05-22 Oxide transparent electroconductive film, and photoelectric conversion element and photodetection element using the oxide transparent electroconductive film Ceased WO2008146693A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009516276A JP5229919B2 (en) 2007-05-23 2008-05-22 Photoelectric conversion element and photodetection element using oxide transparent conductive film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007136643 2007-05-23
JP2007-136643 2007-05-23
JP2007299216 2007-11-19
JP2007-299216 2007-11-19

Publications (1)

Publication Number Publication Date
WO2008146693A1 true WO2008146693A1 (en) 2008-12-04

Family

ID=40074946

Family Applications (1)

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PCT/JP2008/059416 Ceased WO2008146693A1 (en) 2007-05-23 2008-05-22 Oxide transparent electroconductive film, and photoelectric conversion element and photodetection element using the oxide transparent electroconductive film

Country Status (2)

Country Link
JP (2) JP5229919B2 (en)
WO (1) WO2008146693A1 (en)

Cited By (17)

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WO2009116580A1 (en) * 2008-03-19 2009-09-24 三洋電機株式会社 Solar cell and method for manufacturing the same
JP2010186822A (en) * 2009-02-10 2010-08-26 National Institute Of Advanced Industrial Science & Technology Photoelectric conversion device, and method of manufacturing the same
WO2011034145A1 (en) * 2009-09-18 2011-03-24 三洋電機株式会社 Solar battery, solar battery module, and solar battery system
WO2011034141A1 (en) * 2009-09-18 2011-03-24 三洋電機株式会社 Solar battery, solar battery module, and solar battery system
WO2011043235A1 (en) * 2009-10-06 2011-04-14 Jx日鉱日石金属株式会社 Indium oxide sintered body, indium oxide transparent conductive film, and method for manufacturing the transparent conductive film
EP2479763A4 (en) * 2009-09-17 2013-11-13 Sanyo Electric Co TRANSPARENT CONDUCTIVE FILM AND DEVICE COMPRISING SAME
JP2014082387A (en) * 2012-10-17 2014-05-08 Mitsubishi Electric Corp Method for manufacturing photovoltaic element and photovoltaic element
JP2014175441A (en) * 2013-03-08 2014-09-22 Kaneka Corp Crystal silicon-based solar battery, and method for manufacturing the same
WO2015037577A1 (en) * 2013-09-13 2015-03-19 独立行政法人産業技術総合研究所 Optical device
JP2017092033A (en) * 2015-11-09 2017-05-25 日東電工株式会社 Light transmissive conductive film and light control film
TWI617041B (en) * 2016-12-02 2018-03-01 財團法人金屬工業研究發展中心 Silicon-based heterojunction solar cell and fabricating method thereof
KR20180095884A (en) 2016-03-29 2018-08-28 가부시키가이샤 아루박 A method of manufacturing a substrate having a transparent conductive film, a manufacturing apparatus of a substrate having a transparent conductive film, a substrate having a transparent conductive film,
JP2018139329A (en) * 2018-06-11 2018-09-06 株式会社カネカ Method for manufacturing crystalline silicon solar cell
JP2018150613A (en) * 2017-03-13 2018-09-27 東ソー株式会社 Composite oxide transparent conductive film and substrate with transparent conductive film
JP2019178403A (en) * 2018-03-30 2019-10-17 東ソー株式会社 Composite oxide transparent conductive film, method for manufacturing the same, and base material having transparent conductive film
CN115413257A (en) * 2021-03-31 2022-11-29 法国圣戈班玻璃厂 Vehicle glazing with near infrared detection system and associated device
KR20240068536A (en) * 2022-11-10 2024-05-17 닛토덴코 가부시키가이샤 Transparent conductive film

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JP5680386B2 (en) * 2010-11-29 2015-03-04 ジオマテック株式会社 Transparent conductive film and substrate with transparent conductive film
JP6718344B2 (en) * 2015-09-30 2020-07-08 積水化学工業株式会社 Light-transmitting conductive film and method for manufacturing light-transmitting conductive film
JP6159490B1 (en) * 2015-09-30 2017-07-05 積水化学工業株式会社 Light transmissive conductive film and method for producing annealed light transmissive conductive film
JP6718343B2 (en) * 2015-09-30 2020-07-08 積水化学工業株式会社 Light-transmitting conductive film and method for manufacturing light-transmitting conductive film
KR101999894B1 (en) * 2017-08-03 2019-07-12 주식회사 나노신소재 Composite oxide sintered body, sputtering target, transparent conductive oxide film and method for producing same
JP2023104168A (en) 2022-01-17 2023-07-28 国立研究開発法人産業技術総合研究所 Conductive member and method for manufacturing the conductive member

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JPH0494174A (en) * 1990-08-10 1992-03-26 Fuji Electric Co Ltd Compound thin film solar cell and its production
JPH10226598A (en) * 1997-02-13 1998-08-25 Sanyo Electric Co Ltd Transparent conductive titanium oxide film and its production
JPH10294482A (en) * 1997-04-17 1998-11-04 Kanegafuchi Chem Ind Co Ltd Silicon-based thin film photoelectric converter
JP2001047549A (en) * 1999-08-06 2001-02-20 Mitsui Chemicals Inc Transparent conductive film
JP2004014401A (en) * 2002-06-10 2004-01-15 Konica Minolta Holdings Inc Transparent conductive substrate for organic electroluminescent display device
JP2004095240A (en) * 2002-08-30 2004-03-25 Mitsui Chemicals Inc Transparent electrode
JP2004207221A (en) * 2002-10-04 2004-07-22 Sumitomo Metal Mining Co Ltd Oxide transparent electrode film and manufacturing method thereof, transparent conductive substrate, solar cell, and photodetector
WO2004105054A1 (en) * 2003-05-20 2004-12-02 Idemitsu Kosan Co. Ltd. Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display
JP2005259628A (en) * 2004-03-15 2005-09-22 Konica Minolta Holdings Inc Method for forming transparent conductive film, transparent conductive film formed thereby, and article having the same

Cited By (40)

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JP5279814B2 (en) * 2008-03-19 2013-09-04 三洋電機株式会社 Solar cell and manufacturing method thereof
WO2009116580A1 (en) * 2008-03-19 2009-09-24 三洋電機株式会社 Solar cell and method for manufacturing the same
JP2010186822A (en) * 2009-02-10 2010-08-26 National Institute Of Advanced Industrial Science & Technology Photoelectric conversion device, and method of manufacturing the same
EP2479763A4 (en) * 2009-09-17 2013-11-13 Sanyo Electric Co TRANSPARENT CONDUCTIVE FILM AND DEVICE COMPRISING SAME
EP2479796A4 (en) * 2009-09-18 2013-08-07 Sanyo Electric Co SOLAR BATTERY, SOLAR BATTERY MODULE, AND SOLAR BATTERY SYSTEM
JP5533878B2 (en) * 2009-09-18 2014-06-25 三洋電機株式会社 Solar cell, solar cell module and solar cell system
CN102473761A (en) * 2009-09-18 2012-05-23 三洋电机株式会社 Solar battery, solar battery module, and solar battery system
WO2011034145A1 (en) * 2009-09-18 2011-03-24 三洋電機株式会社 Solar battery, solar battery module, and solar battery system
US20120167982A1 (en) * 2009-09-18 2012-07-05 Sanyo Electric Co., Ltd Solar cell, solar cell module and solar cell system
US20120192914A1 (en) * 2009-09-18 2012-08-02 Sanyo Electric Co., Ltd. Solar cell, solar cell module and solar cell system
CN102473760A (en) * 2009-09-18 2012-05-23 三洋电机株式会社 Solar cell module and solar cell system
EP2479797A4 (en) * 2009-09-18 2013-08-07 Sanyo Electric Co SOLAR BATTERY, SOLAR BATTERY MODULE, AND SOLAR BATTERY SYSTEM
WO2011034141A1 (en) * 2009-09-18 2011-03-24 三洋電機株式会社 Solar battery, solar battery module, and solar battery system
WO2011043235A1 (en) * 2009-10-06 2011-04-14 Jx日鉱日石金属株式会社 Indium oxide sintered body, indium oxide transparent conductive film, and method for manufacturing the transparent conductive film
US9589695B2 (en) 2009-10-06 2017-03-07 Jx Nippon Mining & Metals Corporation Indium oxide transparent conductive film
JP5349587B2 (en) * 2009-10-06 2013-11-20 Ｊｘ日鉱日石金属株式会社 Indium oxide sintered body, indium oxide transparent conductive film, and method for producing the transparent conductive film
KR101274279B1 (en) 2009-10-06 2013-06-13 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Indium oxide sintered body, indium oxide transparent conductive film, and method for manufacturing the transparent conductive film
US8771557B2 (en) 2009-10-06 2014-07-08 Jx Nippon Mining & Metals Corporation Indium oxide sintered compact, indium oxide transparent conductive film, and manufacturing method of indium oxide transparent conductive film
CN102471160A (en) * 2009-10-06 2012-05-23 吉坤日矿日石金属株式会社 Indium oxide sintered body, indium oxide transparent conductive film, and manufacturing method of the transparent conductive film
CN105439541A (en) * 2009-10-06 2016-03-30 吉坤日矿日石金属株式会社 Indium oxide sintered body, indium oxide transparent conductive film, and method for manufacturing the transparent conductive film
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US10037830B2 (en) 2009-10-06 2018-07-31 Jx Nippon Mining & Metals Corporation Indium oxide transparent conductive film
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US11674217B2 (en) 2016-03-29 2023-06-13 Ulvac, Inc. Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell
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Also Published As

Publication number Publication date
JP2013229283A (en) 2013-11-07
JPWO2008146693A1 (en) 2010-08-19
JP5229919B2 (en) 2013-07-03
JP5510849B2 (en) 2014-06-04

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