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WO2008146553A1 - 磁気ランダムアクセスメモリ - Google Patents

磁気ランダムアクセスメモリ Download PDF

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Publication number
WO2008146553A1
WO2008146553A1 PCT/JP2008/057747 JP2008057747W WO2008146553A1 WO 2008146553 A1 WO2008146553 A1 WO 2008146553A1 JP 2008057747 W JP2008057747 W JP 2008057747W WO 2008146553 A1 WO2008146553 A1 WO 2008146553A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
word line
random access
access memory
magnetic random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057747
Other languages
English (en)
French (fr)
Inventor
Ryusuke Nebashi
Noboru Sakimura
Tadahiko Sugibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2009516223A priority Critical patent/JP5093234B2/ja
Priority to US12/602,230 priority patent/US8009467B2/en
Publication of WO2008146553A1 publication Critical patent/WO2008146553A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/02—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using magnetic elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　本発明に係るＭＲＡＭは、メモリセルアレイと、第１方向に配置されたメモリセル群に接続された第１ワード線及び第２ワード線と、マトリックス状に配置された複数のブロックと、第１方向に配置されたブロック群に接続された共通ワード線と、第２方向に配置されたブロック群に接続されたビット線対とを備える。各ブロックは複数のメモリセルを備え、各メモリセルは第１トランジスタと磁気抵抗素子とを有する。各ブロックは更に、上記複数のメモリセルが並列に接続された第２トランジスタを備える。第２トランジスタのゲートは共通ワード線に接続され、第１トランジスタのゲートは第１ワード線に接続される。第１トランジスタのソース／ドレインの一方は、第１ビット線に接続され、その他方は、磁気抵抗素子の一端に接続され、また、第２トランジスタを介して第２ビット線に接続される。磁気抵抗素子の他端は第２ワード線に接続される。
PCT/JP2008/057747 2007-05-29 2008-04-22 磁気ランダムアクセスメモリ Ceased WO2008146553A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009516223A JP5093234B2 (ja) 2007-05-29 2008-04-22 磁気ランダムアクセスメモリ
US12/602,230 US8009467B2 (en) 2007-05-29 2008-04-22 Magnetic random access memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007141416 2007-05-29
JP2007-141416 2007-05-29
JP2007291901 2007-11-09
JP2007-291901 2007-11-09

Publications (1)

Publication Number Publication Date
WO2008146553A1 true WO2008146553A1 (ja) 2008-12-04

Family

ID=40074823

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057747 Ceased WO2008146553A1 (ja) 2007-05-29 2008-04-22 磁気ランダムアクセスメモリ

Country Status (3)

Country Link
US (1) US8009467B2 (ja)
JP (1) JP5093234B2 (ja)
WO (1) WO2008146553A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010137573A1 (ja) * 2009-05-29 2010-12-02 日本電気株式会社 不揮発性ｃａｍ

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009104427A1 (ja) * 2008-02-19 2009-08-27 日本電気株式会社 磁気ランダムアクセスメモリ
US8605520B2 (en) * 2010-09-22 2013-12-10 Magic Technologies, Inc. Replaceable, precise-tracking reference lines for memory products
US8902644B2 (en) * 2010-12-14 2014-12-02 Nec Corporation Semiconductor storage device and its manufacturing method
JP5444414B2 (ja) * 2012-06-04 2014-03-19 株式会社東芝 磁気ランダムアクセスメモリ
US9153307B2 (en) 2013-09-09 2015-10-06 Qualcomm Incorporated System and method to provide a reference cell
KR102098244B1 (ko) 2014-02-04 2020-04-07 삼성전자 주식회사 자기 메모리 소자
US9478308B1 (en) 2015-05-26 2016-10-25 Intel IP Corporation Programmable memory device sense amplifier
JP6505902B1 (ja) * 2018-03-20 2019-04-24 株式会社東芝 磁気メモリ及びメモリシステム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004206796A (ja) * 2002-12-25 2004-07-22 Toshiba Corp 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法
JP2004348934A (ja) * 2002-11-27 2004-12-09 Nec Corp メモリセル及び磁気ランダムアクセスメモリ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259644B1 (en) 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
US6490217B1 (en) * 2001-05-23 2002-12-03 International Business Machines Corporation Select line architecture for magnetic random access memories
JP3795875B2 (ja) * 2003-05-22 2006-07-12 東芝マイクロエレクトロニクス株式会社 磁気ランダムアクセスメモリ及びそのデータ読み出し方法
JP3935150B2 (ja) * 2004-01-20 2007-06-20 株式会社東芝 磁気ランダムアクセスメモリ
JP4993118B2 (ja) * 2005-02-08 2012-08-08 日本電気株式会社 半導体記憶装置及び半導体記憶装置の読み出し方法
JPWO2006095389A1 (ja) * 2005-03-04 2008-08-14 富士通株式会社 磁気メモリ装置並びにその読み出し方法及び書き込み方法
US7403413B2 (en) * 2006-06-28 2008-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple port resistive memory cell
JP5190719B2 (ja) * 2007-11-08 2013-04-24 日本電気株式会社 Ｍｒａｍの読み出し方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004348934A (ja) * 2002-11-27 2004-12-09 Nec Corp メモリセル及び磁気ランダムアクセスメモリ
JP2004206796A (ja) * 2002-12-25 2004-07-22 Toshiba Corp 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010137573A1 (ja) * 2009-05-29 2010-12-02 日本電気株式会社 不揮発性ｃａｍ
JP5483265B2 (ja) * 2009-05-29 2014-05-07 日本電気株式会社 不揮発性ｃａｍ

Also Published As

Publication number Publication date
JP5093234B2 (ja) 2012-12-12
US20100182824A1 (en) 2010-07-22
JPWO2008146553A1 (ja) 2010-08-19
US8009467B2 (en) 2011-08-30

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