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WO2008145098A3 - Method for the wet-chemical etching of tio2 thin-films and tio2 particles and etching reagent - Google Patents

Method for the wet-chemical etching of tio2 thin-films and tio2 particles and etching reagent Download PDF

Info

Publication number
WO2008145098A3
WO2008145098A3 PCT/DE2008/000875 DE2008000875W WO2008145098A3 WO 2008145098 A3 WO2008145098 A3 WO 2008145098A3 DE 2008000875 W DE2008000875 W DE 2008000875W WO 2008145098 A3 WO2008145098 A3 WO 2008145098A3
Authority
WO
WIPO (PCT)
Prior art keywords
tio2
films
etching
particles
reagent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/000875
Other languages
German (de)
French (fr)
Other versions
WO2008145098A2 (en
Inventor
Abdelhak Belaidi
Thomas Dittrich
Martha Christina Lux-Steiner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HELMHOTZ-ZENTRUM BERLIN fur MATERIALIEN und ENERGIE GmbH
HELMHOTZ ZENTRUM BERLIN fur M
Original Assignee
HELMHOTZ-ZENTRUM BERLIN fur MATERIALIEN und ENERGIE GmbH
HELMHOTZ ZENTRUM BERLIN fur M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HELMHOTZ-ZENTRUM BERLIN fur MATERIALIEN und ENERGIE GmbH, HELMHOTZ ZENTRUM BERLIN fur M filed Critical HELMHOTZ-ZENTRUM BERLIN fur MATERIALIEN und ENERGIE GmbH
Priority to EP08758115A priority Critical patent/EP2164813A2/en
Publication of WO2008145098A2 publication Critical patent/WO2008145098A2/en
Publication of WO2008145098A3 publication Critical patent/WO2008145098A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2456—Coating containing TiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • C01G23/047—Titanium dioxide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • C03C17/256—Coating containing TiO2
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/212—TiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating
    • C03C2218/33—Partly or completely removing a coating by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The invention relates to a method and an etching reagent for the wet-chemical etching of TiO2 thin-films and TiO2 particles that permits a defined removal of the TiO2 thin-film and a reduction of the particle size. The method comprises the steps: production of an etching reagent with a pH value greater than 13, said reagent containing a base with a concentration of > 0.1 mol, selected from the bases NH4OH, NaOH, KOH or mixtures of the same and H2O2 with a smaller concentration than that of the base; setting of a temperature that is equal to or greater than the ambient temperature; immersion of the TiO2 thin-films and TiO2 particles in the etching reagent and steeping of the layers of the TiO2 thin-films and particles; said films and particles are then rinsed with distilled water and dried. To maintain the initial composition of the etching reagent, H2O2 is added during the etching process.
PCT/DE2008/000875 2007-05-30 2008-05-23 Method for the wet-chemical etching of tio2 thin-films and tio2 particles and etching reagent Ceased WO2008145098A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP08758115A EP2164813A2 (en) 2007-05-30 2008-05-23 Method for the wet-chemical etching of tio2 thin-films and tio2 particles and etching reagent

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200710025136 DE102007025136A1 (en) 2007-05-30 2007-05-30 Process for the wet-chemical etching of TiO 2 thin films and TiO 2 particles and etchants
DE102007025136.1 2007-05-30

Publications (2)

Publication Number Publication Date
WO2008145098A2 WO2008145098A2 (en) 2008-12-04
WO2008145098A3 true WO2008145098A3 (en) 2009-02-12

Family

ID=39941784

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/000875 Ceased WO2008145098A2 (en) 2007-05-30 2008-05-23 Method for the wet-chemical etching of tio2 thin-films and tio2 particles and etching reagent

Country Status (3)

Country Link
EP (1) EP2164813A2 (en)
DE (1) DE102007025136A1 (en)
WO (1) WO2008145098A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140058563A (en) * 2011-07-18 2014-05-14 메르크 파텐트 게엠베하 Structuring antistatic and antireflection coatings and corresponding stacked layers

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0710606A (en) * 1993-06-29 1995-01-13 Asahi Glass Co Ltd Method of etching heat ray reflective glass
WO2001058250A1 (en) * 2000-02-11 2001-08-16 H. Weterings B.V. Pane provided with a coating which prevents deposits and/or damage, and a process and device for its production
US20040002430A1 (en) * 2002-07-01 2004-01-01 Applied Materials, Inc. Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use
US20060037942A1 (en) * 2004-08-17 2006-02-23 Seong-Kyu Yun Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry
US20070015372A1 (en) * 2005-07-12 2007-01-18 Samsung Electronics Co., Ltd. Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2334770A1 (en) * 1975-12-09 1977-07-08 Radiotechnique Compelec METHOD OF ATTACKING AN OXIDIZABLE METAL LAYER SERVING AS A PHOTOGRAVURE MASK
DE4110595C1 (en) 1991-04-02 1992-11-26 Thyssen Edelstahlwerke Ag, 4000 Duesseldorf, De Wet-chemical removal of hard coatings from workpiece surfaces - comprises using hydrogen peroxide soln. stabilised by complex former e.g. potassium-sodium tartrate-tetra:hydrate
US5223081A (en) * 1991-07-03 1993-06-29 Doan Trung T Method for roughening a silicon or polysilicon surface for a semiconductor substrate
DE4339502C2 (en) 1993-11-24 1999-02-25 Thoene Carl Stefan Stripping solution for the wet chemical removal of hard material layers and processes for their application

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0710606A (en) * 1993-06-29 1995-01-13 Asahi Glass Co Ltd Method of etching heat ray reflective glass
WO2001058250A1 (en) * 2000-02-11 2001-08-16 H. Weterings B.V. Pane provided with a coating which prevents deposits and/or damage, and a process and device for its production
US20040002430A1 (en) * 2002-07-01 2004-01-01 Applied Materials, Inc. Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use
US20060037942A1 (en) * 2004-08-17 2006-02-23 Seong-Kyu Yun Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry
US20070015372A1 (en) * 2005-07-12 2007-01-18 Samsung Electronics Co., Ltd. Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHEMICAL ABSTRACTS, AMERICAN CHEMICAL SOCIETY, US, 8 April 1991 (1991-04-08), XP000318354, ISSN: 0009-2258 *
See also references of EP2164813A2 *

Also Published As

Publication number Publication date
WO2008145098A2 (en) 2008-12-04
DE102007025136A1 (en) 2008-12-11
EP2164813A2 (en) 2010-03-24

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