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WO2008144759A3 - Organic electrodes and electronic devices - Google Patents

Organic electrodes and electronic devices Download PDF

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Publication number
WO2008144759A3
WO2008144759A3 PCT/US2008/064426 US2008064426W WO2008144759A3 WO 2008144759 A3 WO2008144759 A3 WO 2008144759A3 US 2008064426 W US2008064426 W US 2008064426W WO 2008144759 A3 WO2008144759 A3 WO 2008144759A3
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
gate
drain
source
electronic devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2008/064426
Other languages
French (fr)
Other versions
WO2008144759A2 (en
Inventor
Jan Bernkopf
Mathew K Mathai
Darin W Laird
Christopher T Brown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3533899 Inc
Original Assignee
Plextronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plextronics Inc filed Critical Plextronics Inc
Publication of WO2008144759A2 publication Critical patent/WO2008144759A2/en
Publication of WO2008144759A3 publication Critical patent/WO2008144759A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

A device comprising: a transistor comprising: at least one source; at least one drain; at least one channel; at least one gate insulator comprising (i) a first surface defining a first side, and (ii) a second surface defining a second side and opposing the first surface and first side, wherein the source and the drain are disposed on the gate insulator first side; at least one gate disposed on the gate insulator second side; wherein the gate does not substantially overlap with the source or the drain so as to minimize parasitic capacitance, the device further comprising a substrate to support the transistor. The transistor can be adapted for a bottom-gate configuration or a top-gate configuration. The transistor can be a field effect transistor, an organic field effect transistor, or a thin- film transistor. A polymer substrate can be used. Applications include printed electronics.
PCT/US2008/064426 2007-05-21 2008-05-21 Organic electrodes and electronic devices Ceased WO2008144759A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93934607P 2007-05-21 2007-05-21
US60/939,346 2007-05-21

Publications (2)

Publication Number Publication Date
WO2008144759A2 WO2008144759A2 (en) 2008-11-27
WO2008144759A3 true WO2008144759A3 (en) 2009-03-19

Family

ID=39615605

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/064426 Ceased WO2008144759A2 (en) 2007-05-21 2008-05-21 Organic electrodes and electronic devices

Country Status (1)

Country Link
WO (1) WO2008144759A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110450B2 (en) * 2007-12-19 2012-02-07 Palo Alto Research Center Incorporated Printed TFT and TFT array with self-aligned gate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942374A (en) * 1993-03-25 1999-08-24 Texas Instruments Incorporated Integrated circuits formed in radiation sensitive material and method of forming same
US6429450B1 (en) * 1997-08-22 2002-08-06 Koninklijke Philips Electronics N.V. Method of manufacturing a field-effect transistor substantially consisting of organic materials
US20050051770A1 (en) * 2003-09-04 2005-03-10 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP2005158775A (en) * 2003-11-20 2005-06-16 Hiroyuki Okada Manufacturing method of organic thin film field effect transistor
WO2006124055A2 (en) * 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
EP1732150A1 (en) * 2005-06-07 2006-12-13 Xerox Corporation Organic thin film transistors with multilayer electrodes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942374A (en) * 1993-03-25 1999-08-24 Texas Instruments Incorporated Integrated circuits formed in radiation sensitive material and method of forming same
US6429450B1 (en) * 1997-08-22 2002-08-06 Koninklijke Philips Electronics N.V. Method of manufacturing a field-effect transistor substantially consisting of organic materials
US20050051770A1 (en) * 2003-09-04 2005-03-10 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP2005158775A (en) * 2003-11-20 2005-06-16 Hiroyuki Okada Manufacturing method of organic thin film field effect transistor
WO2006124055A2 (en) * 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
EP1732150A1 (en) * 2005-06-07 2006-12-13 Xerox Corporation Organic thin film transistors with multilayer electrodes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DE LEEUW D M ET AL: "Polymeric integrated circuits and light-emitting diodes", ELECTRON DEVICES MEETING, 1997. TECHNICAL DIGEST., INTERNATIONAL WASHINGTON, DC, USA 7-10 DEC. 1997, NEW YORK, NY, USA,IEEE, US, 7 December 1997 (1997-12-07), pages 331 - 336, XP010265518, ISBN: 978-0-7803-4100-5 *

Also Published As

Publication number Publication date
WO2008144759A2 (en) 2008-11-27

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