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WO2008140596A3 - Methods for high figure-of-merit in nanostructured thermoelectric materials - Google Patents

Methods for high figure-of-merit in nanostructured thermoelectric materials Download PDF

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Publication number
WO2008140596A3
WO2008140596A3 PCT/US2007/086291 US2007086291W WO2008140596A3 WO 2008140596 A3 WO2008140596 A3 WO 2008140596A3 US 2007086291 W US2007086291 W US 2007086291W WO 2008140596 A3 WO2008140596 A3 WO 2008140596A3
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WO
WIPO (PCT)
Prior art keywords
materials
merit
thermoelectric
value
grain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/086291
Other languages
French (fr)
Other versions
WO2008140596A2 (en
Inventor
Zhifeng Ren
Bed Poudel
Gang Chen
Yucheng Lan
Dezhi Wang
Qing Hao
Mildred Dresselhaus
Yi Ma
Xiao Yan
Xiaoyuan Chen
Xiaowei Wang
Giri Raj Joshi
Bo Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boston College
Massachusetts Institute of Technology
Original Assignee
Boston College
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boston College, Massachusetts Institute of Technology filed Critical Boston College
Priority to JP2009539534A priority Critical patent/JP5329423B2/en
Priority to KR1020097013824A priority patent/KR101452795B1/en
Priority to CN200780050809A priority patent/CN101803050A/en
Publication of WO2008140596A2 publication Critical patent/WO2008140596A2/en
Anticipated expiration legal-status Critical
Publication of WO2008140596A3 publication Critical patent/WO2008140596A3/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Silicon Compounds (AREA)

Abstract

Thermoelectric materials with high figures of merit, ZT values, are disclosed In many instances, such materials include nano-sized domains (e g, nanocrystalhne), which are hypothesized to help increase the ZT value of the material (e g, by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries) The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e g, via direct current induced hot press) into a new bulk material Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped Various compositions and methods relating to aspects of nanostructured theromoelectπc materials (e g, modulation doping) are further disclosed.
PCT/US2007/086291 2006-12-01 2007-12-03 Methods for high figure-of-merit in nanostructured thermoelectric materials Ceased WO2008140596A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009539534A JP5329423B2 (en) 2006-12-01 2007-12-03 A method for high explicit numbers in thermoelectric materials with nanostructures
KR1020097013824A KR101452795B1 (en) 2006-12-01 2007-12-03 A method for high performance index in thermoelectric materials of nanostructures
CN200780050809A CN101803050A (en) 2006-12-01 2007-12-03 Method for high quality factor in nanostructured thermoelectric materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87224206P 2006-12-01 2006-12-01
US60/872,242 2006-12-01

Publications (2)

Publication Number Publication Date
WO2008140596A2 WO2008140596A2 (en) 2008-11-20
WO2008140596A3 true WO2008140596A3 (en) 2009-12-30

Family

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Family Applications (1)

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PCT/US2007/086291 Ceased WO2008140596A2 (en) 2006-12-01 2007-12-03 Methods for high figure-of-merit in nanostructured thermoelectric materials

Country Status (4)

Country Link
JP (1) JP5329423B2 (en)
KR (1) KR101452795B1 (en)
CN (2) CN101803050A (en)
WO (1) WO2008140596A2 (en)

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KR102401917B1 (en) * 2015-04-02 2022-05-25 엘지이노텍 주식회사 Thermoelectric Material Composition for Thermoelectric Element and Thermoelectric Element including the same
WO2017037884A1 (en) * 2015-09-02 2017-03-09 株式会社日立製作所 Thermoelectric conversion material and thermoelectric conversion element in which same is used, and thermoelectric conversion module
EP3472839A4 (en) * 2016-06-20 2020-02-26 Massachusetts Institute of Technology DEVICE AND METHOD FOR ELECTRICAL CIRCUIT
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CN106252499B (en) * 2016-09-19 2019-09-24 深圳热电新能源科技有限公司 A kind of high-performance N-type PbTe base thermoelectricity material and preparation method thereof
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JP6951097B2 (en) * 2017-03-29 2021-10-20 株式会社日立製作所 Thermoelectric conversion element and thermoelectric conversion module
JP7209167B2 (en) * 2017-05-08 2023-01-20 パナソニックＩｐマネジメント株式会社 Jintle phase thermoelectric conversion material
JP6892786B2 (en) * 2017-05-10 2021-06-23 株式会社日立製作所 Thermoelectric conversion material and thermoelectric conversion module
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KR102080377B1 (en) * 2017-12-31 2020-02-21 서울대학교산학협력단 Thermoelectric materials and method for manufacturing the same
CN109659425B (en) * 2018-12-29 2020-07-10 昆明理工大学 A kind of bismuth-based thermoelectric material using barrier layer to improve doping effect and preparation method thereof
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JPWO2021193357A1 (en) * 2020-03-25 2021-09-30
CN113328031A (en) * 2020-09-01 2021-08-31 中国科学院宁波材料技术与工程研究所 High-strength and high-efficiency bismuth telluride block and preparation method and application thereof
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Also Published As

Publication number Publication date
JP5329423B2 (en) 2013-10-30
CN101803050A (en) 2010-08-11
KR20090110831A (en) 2009-10-22
JP2010512011A (en) 2010-04-15
WO2008140596A2 (en) 2008-11-20
CN104795486A (en) 2015-07-22
KR101452795B1 (en) 2014-10-21

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