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WO2008030960A3 - Structures à déformation contrôlée dans des interconnexions de semi-conducteurs et des nanomembranes pour dispositifs électroniques étirables - Google Patents

Structures à déformation contrôlée dans des interconnexions de semi-conducteurs et des nanomembranes pour dispositifs électroniques étirables Download PDF

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Publication number
WO2008030960A3
WO2008030960A3 PCT/US2007/077759 US2007077759W WO2008030960A3 WO 2008030960 A3 WO2008030960 A3 WO 2008030960A3 US 2007077759 W US2007077759 W US 2007077759W WO 2008030960 A3 WO2008030960 A3 WO 2008030960A3
Authority
WO
WIPO (PCT)
Prior art keywords
stretchable
nanomembranes
semiconductors
electronic circuits
stretchable electronics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/077759
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English (en)
Other versions
WO2008030960A2 (fr
Inventor
John A Rogers
Matthew Meitl
Yugang Sun
Heung Cho Ko
Andrew Carlson
Won Mook Choi
Mark Stoykovich
Hanqing Jiang
Yonggang Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois at Urbana Champaign
University of Illinois System
Original Assignee
University of Illinois at Urbana Champaign
University of Illinois System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Illinois at Urbana Champaign, University of Illinois System filed Critical University of Illinois at Urbana Champaign
Priority to JP2009527564A priority Critical patent/JP5578509B2/ja
Priority to KR1020147031584A priority patent/KR101689747B1/ko
Priority to KR1020177037238A priority patent/KR102087337B1/ko
Priority to EP07841968A priority patent/EP2064710A4/fr
Priority to KR20097007081A priority patent/KR101453419B1/ko
Priority to KR1020167032797A priority patent/KR101814683B1/ko
Priority to CN2007800411276A priority patent/CN101681695B/zh
Priority to KR1020147006478A priority patent/KR101612749B1/ko
Publication of WO2008030960A2 publication Critical patent/WO2008030960A2/fr
Publication of WO2008030960A3 publication Critical patent/WO2008030960A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H10W70/05—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0277—Bendability or stretchability details
    • H05K1/0283—Stretchable printed circuits
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
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    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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    • H10D84/01—Manufacture or treatment
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    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H10P10/12—
    • H10P72/74—
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    • H10W70/611—
    • H10W70/688—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0133—Elastomeric or compliant polymer
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09045—Locally raised area or protrusion of insulating substrate
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    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0271—Mechanical force other than pressure, e.g. shearing or pulling
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Thin Film Transistor (AREA)
  • Micromachines (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Pressure Sensors (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

Dans un aspect, la présente invention concerne des composants étirables et éventuellement imprimables, tels que des semi-conducteurs et des circuits électriques, qui présentent une efficacité satisfaisante lorsqu'ils sont étirés, comprimés, pliés ou déformés d'une autre façon. L'invention a également trait à des procédés de fabrication ou de réglage de tels composants étirables. Les semi-conducteurs et circuits électroniques étirables préférés pour certaines applications sont souples en plus d'être étirables, et peuvent ainsi considérablement s'allonger, se plier, se couder ou se déformer d'une autre manière le long d'un ou plusieurs axes. En outre, les semi-conducteurs et circuits électroniques étirables selon l'invention sont adaptés à une large gamme de configurations de dispositifs, ce qui permet d'obtenir des dispositifs électroniques et optoélectroniques totalement souples.
PCT/US2007/077759 2006-09-06 2007-09-06 Structures à déformation contrôlée dans des interconnexions de semi-conducteurs et des nanomembranes pour dispositifs électroniques étirables Ceased WO2008030960A2 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2009527564A JP5578509B2 (ja) 2006-09-06 2007-09-06 エラストマ基板に伸縮性コンポーネントを接着する方法
KR1020147031584A KR101689747B1 (ko) 2006-09-06 2007-09-06 2차원 인장 가능하고 구부릴 수 있는 장치
KR1020177037238A KR102087337B1 (ko) 2006-09-06 2007-09-06 인장 가능한 가요성 장치의 제조 방법
EP07841968A EP2064710A4 (fr) 2006-09-06 2007-09-06 Structures à déformation contrôlée dans des interconnexions de semi-conducteurs et des nanomembranes pour dispositifs électroniques étirables
KR20097007081A KR101453419B1 (ko) 2006-09-06 2007-09-06 2차원 인장 가능하고 구부릴 수 있는 장치
KR1020167032797A KR101814683B1 (ko) 2006-09-06 2007-09-06 2차원 인장 가능하고 구부릴 수 있는 장치
CN2007800411276A CN101681695B (zh) 2006-09-06 2007-09-06 在用于可拉伸电子元件的半导体互连和纳米膜中的受控弯曲结构
KR1020147006478A KR101612749B1 (ko) 2006-09-06 2007-09-06 2차원 인장 가능하고 구부릴 수 있는 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US82468306P 2006-09-06 2006-09-06
US60/824,683 2006-09-06
US94462607P 2007-06-18 2007-06-18
US60/944,626 2007-06-18

Publications (2)

Publication Number Publication Date
WO2008030960A2 WO2008030960A2 (fr) 2008-03-13
WO2008030960A3 true WO2008030960A3 (fr) 2008-07-24

Family

ID=39158048

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/077759 Ceased WO2008030960A2 (fr) 2006-09-06 2007-09-06 Structures à déformation contrôlée dans des interconnexions de semi-conducteurs et des nanomembranes pour dispositifs électroniques étirables

Country Status (7)

Country Link
EP (1) EP2064710A4 (fr)
JP (3) JP5578509B2 (fr)
KR (5) KR101612749B1 (fr)
CN (2) CN103213935B (fr)
MY (2) MY172115A (fr)
TW (3) TWI485863B (fr)
WO (1) WO2008030960A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9324733B2 (en) 2004-06-04 2016-04-26 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

Families Citing this family (181)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557433B2 (en) 2004-10-25 2009-07-07 Mccain Joseph H Microelectronic device with integrated energy source
KR101429098B1 (ko) 2004-06-04 2014-09-22 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
MY149190A (en) 2006-09-20 2013-07-31 Univ Illinois Release strategies for making transferable semiconductor structures, devices and device components
CN105826345B (zh) 2007-01-17 2018-07-31 伊利诺伊大学评议会 通过基于印刷的组装制造的光学系统
EP2255378B1 (fr) * 2008-03-05 2015-08-05 The Board of Trustees of the University of Illinois Dispositifs electroniques etirables et pliables
US8470701B2 (en) 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
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